JPS5275176A - Method for vapor phase epitaxial growth - Google Patents

Method for vapor phase epitaxial growth

Info

Publication number
JPS5275176A
JPS5275176A JP15149075A JP15149075A JPS5275176A JP S5275176 A JPS5275176 A JP S5275176A JP 15149075 A JP15149075 A JP 15149075A JP 15149075 A JP15149075 A JP 15149075A JP S5275176 A JPS5275176 A JP S5275176A
Authority
JP
Japan
Prior art keywords
vapor phase
epitaxial growth
phase epitaxial
substrate
disposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15149075A
Other languages
Japanese (ja)
Inventor
Toru Hara
Toru Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15149075A priority Critical patent/JPS5275176A/en
Publication of JPS5275176A publication Critical patent/JPS5275176A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To grow a good-quality crystal at a temperature lower than before by disposing a single crystal Si substrate on a susceptor made of quartz, etc., and flowing a raw material gas at a predetermined rate while heating the substrate with infrared rays.
JP15149075A 1975-12-18 1975-12-18 Method for vapor phase epitaxial growth Pending JPS5275176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15149075A JPS5275176A (en) 1975-12-18 1975-12-18 Method for vapor phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15149075A JPS5275176A (en) 1975-12-18 1975-12-18 Method for vapor phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5275176A true JPS5275176A (en) 1977-06-23

Family

ID=15519626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15149075A Pending JPS5275176A (en) 1975-12-18 1975-12-18 Method for vapor phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5275176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750423A (en) * 1980-09-12 1982-03-24 Nec Corp Vapor phase growth device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750423A (en) * 1980-09-12 1982-03-24 Nec Corp Vapor phase growth device
JPS627685B2 (en) * 1980-09-12 1987-02-18 Nippon Electric Co

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