JPS54139482A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54139482A
JPS54139482A JP4671078A JP4671078A JPS54139482A JP S54139482 A JPS54139482 A JP S54139482A JP 4671078 A JP4671078 A JP 4671078A JP 4671078 A JP4671078 A JP 4671078A JP S54139482 A JPS54139482 A JP S54139482A
Authority
JP
Japan
Prior art keywords
tube
gas
pressure
wafer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4671078A
Other languages
Japanese (ja)
Inventor
Mikio Takagi
Mamoru Maeda
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4671078A priority Critical patent/JPS54139482A/en
Publication of JPS54139482A publication Critical patent/JPS54139482A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To increase the reaction speed as well as to obtain a thick film of Si3N4 formed on the surface of the Si wafer by having the heat treatment in the atmosphere containing the N2 gas or N2 compound featuring the pressure higher than 1 atm. in terms of the absolute pressure.
CONSTITUTION: Si wafer 1 is erected within quartz tube 2 containing gas supply tube 4 at one end, and the other end of tube 2 is sealed up with quartz cover 3 possessing gas exhaustion tube 5. Tube 2 is then put into high-pressure chamber 6 of Ni-Cr steel containing heating furnace 7 inside and pressure gas supply tube 8 on the outer wall, and then high-pressure N2 gas or NH3 is supplied in through tube 4 protruding from chamber 6 and then exhausted through exhaustion tube 5 also protruding from 6. At the same time, the gas of N2 or the like which is slightly higher than the voltage inside tube 2 is sent into chamber 6 and then heated up to 1100°C for about 3 hours. Thus, the Si3N4 film featuring thickness of 100W200Å is grown on wafer 1.
COPYRIGHT: (C)1979,JPO&Japio
JP4671078A 1978-04-21 1978-04-21 Manufacture of semiconductor device Pending JPS54139482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4671078A JPS54139482A (en) 1978-04-21 1978-04-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4671078A JPS54139482A (en) 1978-04-21 1978-04-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54139482A true JPS54139482A (en) 1979-10-29

Family

ID=12754906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4671078A Pending JPS54139482A (en) 1978-04-21 1978-04-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54139482A (en)

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