JPS54139482A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54139482A JPS54139482A JP4671078A JP4671078A JPS54139482A JP S54139482 A JPS54139482 A JP S54139482A JP 4671078 A JP4671078 A JP 4671078A JP 4671078 A JP4671078 A JP 4671078A JP S54139482 A JPS54139482 A JP S54139482A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- gas
- pressure
- wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To increase the reaction speed as well as to obtain a thick film of Si3N4 formed on the surface of the Si wafer by having the heat treatment in the atmosphere containing the N2 gas or N2 compound featuring the pressure higher than 1 atm. in terms of the absolute pressure.
CONSTITUTION: Si wafer 1 is erected within quartz tube 2 containing gas supply tube 4 at one end, and the other end of tube 2 is sealed up with quartz cover 3 possessing gas exhaustion tube 5. Tube 2 is then put into high-pressure chamber 6 of Ni-Cr steel containing heating furnace 7 inside and pressure gas supply tube 8 on the outer wall, and then high-pressure N2 gas or NH3 is supplied in through tube 4 protruding from chamber 6 and then exhausted through exhaustion tube 5 also protruding from 6. At the same time, the gas of N2 or the like which is slightly higher than the voltage inside tube 2 is sent into chamber 6 and then heated up to 1100°C for about 3 hours. Thus, the Si3N4 film featuring thickness of 100W200Å is grown on wafer 1.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4671078A JPS54139482A (en) | 1978-04-21 | 1978-04-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4671078A JPS54139482A (en) | 1978-04-21 | 1978-04-21 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54139482A true JPS54139482A (en) | 1979-10-29 |
Family
ID=12754906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4671078A Pending JPS54139482A (en) | 1978-04-21 | 1978-04-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54139482A (en) |
-
1978
- 1978-04-21 JP JP4671078A patent/JPS54139482A/en active Pending
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