JPS5753930A - Device for chemical gaseous-phase growing - Google Patents

Device for chemical gaseous-phase growing

Info

Publication number
JPS5753930A
JPS5753930A JP12973980A JP12973980A JPS5753930A JP S5753930 A JPS5753930 A JP S5753930A JP 12973980 A JP12973980 A JP 12973980A JP 12973980 A JP12973980 A JP 12973980A JP S5753930 A JPS5753930 A JP S5753930A
Authority
JP
Japan
Prior art keywords
furnace core
si3n4
wall
film
core tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12973980A
Other languages
Japanese (ja)
Inventor
Keiichi Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12973980A priority Critical patent/JPS5753930A/en
Publication of JPS5753930A publication Critical patent/JPS5753930A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To suppress the detetrioration of a furnace core tube and to facilitate removal of unnecessary polycrystalline Si attached to an inner wall, by covering the inner wall surface of the quartz furnace core tube constituting the chemical gaseous phase growing device by a film comprising Si3N4. CONSTITUTION:The inner wall of the quartz furnace core tube 9 constituting the chemical gaseous-phase growing device by an Si3N4 film 10. The temperature of the furnace core tube 9 is made to be about 800 deg.C under the pressure reduced condition of 0.1-1Torr, and the reaction with SiC2Cl2, SiCl4, SiH4, NH3 or N2 are generated. For example, by utilizing the reaction such as 3SiH4+4NH3 Si3N4+12H2 and 3SiCl4+2N2 Si3N4+6Cl , an Si3N4 film 10 with the thickness of 2mum or more is attached to the inner wall of the furnace core 9. In this constitution, the deterioration of the furnace core 9 can be simply prevented. Since the film 10 serves as chemical buffer between polycrystalline Si and the furnace core 9, the etching removal of polycrystal attached to the inner wall can be performed simply and quickly.
JP12973980A 1980-09-17 1980-09-17 Device for chemical gaseous-phase growing Pending JPS5753930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12973980A JPS5753930A (en) 1980-09-17 1980-09-17 Device for chemical gaseous-phase growing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12973980A JPS5753930A (en) 1980-09-17 1980-09-17 Device for chemical gaseous-phase growing

Publications (1)

Publication Number Publication Date
JPS5753930A true JPS5753930A (en) 1982-03-31

Family

ID=15017005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12973980A Pending JPS5753930A (en) 1980-09-17 1980-09-17 Device for chemical gaseous-phase growing

Country Status (1)

Country Link
JP (1) JPS5753930A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0713245A3 (en) * 1994-11-17 1996-09-04 Shinetsu Handotai Kk A heat treatment jig for semiconductor wafers and a method for treating a surface of the same
EP1160354A1 (en) * 2000-05-31 2001-12-05 Matsushita Electric Industrial Co., Ltd. Apparatus and method for depositing semiconductor film
US6458707B1 (en) 1999-07-16 2002-10-01 Nec Corporation Tool for semiconductor manufacturing apparatus and method for using the same
CN113889403A (en) * 2021-12-08 2022-01-04 陕西亚成微电子股份有限公司 Gate oxide layer growth method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0713245A3 (en) * 1994-11-17 1996-09-04 Shinetsu Handotai Kk A heat treatment jig for semiconductor wafers and a method for treating a surface of the same
US5759426A (en) * 1994-11-17 1998-06-02 Shin-Etsu Handotai Co., Ltd. Heat treatment jig for semiconductor wafers and a method for treating a surface of the same
US6458707B1 (en) 1999-07-16 2002-10-01 Nec Corporation Tool for semiconductor manufacturing apparatus and method for using the same
EP1160354A1 (en) * 2000-05-31 2001-12-05 Matsushita Electric Industrial Co., Ltd. Apparatus and method for depositing semiconductor film
KR100729894B1 (en) * 2000-05-31 2007-06-18 마츠시타 덴끼 산교 가부시키가이샤 Semiconductor manufacturing apparatus and method for fabricating semiconductor
CN113889403A (en) * 2021-12-08 2022-01-04 陕西亚成微电子股份有限公司 Gate oxide layer growth method

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