JPS5674928A - Preparation method of semiconductor device - Google Patents

Preparation method of semiconductor device

Info

Publication number
JPS5674928A
JPS5674928A JP15072879A JP15072879A JPS5674928A JP S5674928 A JPS5674928 A JP S5674928A JP 15072879 A JP15072879 A JP 15072879A JP 15072879 A JP15072879 A JP 15072879A JP S5674928 A JPS5674928 A JP S5674928A
Authority
JP
Japan
Prior art keywords
impurity
tube
quartz tube
life
1mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15072879A
Other languages
Japanese (ja)
Inventor
Yukio Tanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15072879A priority Critical patent/JPS5674928A/en
Publication of JPS5674928A publication Critical patent/JPS5674928A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To prevent impurity from mingling from the external part by a method wherein a Si3N4 film is coated with a thickness of 1mum or more at a tube wall of a quartz tube. CONSTITUTION:A reaction tube of quartz glass can easily transmit impurity under a high temperature. And further, when impurity is entered, life is short when it is used for a long time under a high temperature. If approximately 1mum of a Si3N4 film is previously deposited on an outer wall of a quartz tube by the CVD method, reliability of a semiconductor system to be processed is steeply improved, and also, the life of a quartz tube becomes approximately two times.
JP15072879A 1979-11-22 1979-11-22 Preparation method of semiconductor device Pending JPS5674928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15072879A JPS5674928A (en) 1979-11-22 1979-11-22 Preparation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15072879A JPS5674928A (en) 1979-11-22 1979-11-22 Preparation method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5674928A true JPS5674928A (en) 1981-06-20

Family

ID=15503105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15072879A Pending JPS5674928A (en) 1979-11-22 1979-11-22 Preparation method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5674928A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161831U (en) * 1984-09-26 1986-04-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161831U (en) * 1984-09-26 1986-04-25

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