JPS57202750A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57202750A JPS57202750A JP56088662A JP8866281A JPS57202750A JP S57202750 A JPS57202750 A JP S57202750A JP 56088662 A JP56088662 A JP 56088662A JP 8866281 A JP8866281 A JP 8866281A JP S57202750 A JPS57202750 A JP S57202750A
- Authority
- JP
- Japan
- Prior art keywords
- pad
- film
- al2o3
- metal
- hygro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
PURPOSE:To acquire a semiconductor of high hygro-resistance, by covering a junction pad metal or a metal wiring including the pad with its metal oxide, and connecting a lead breaking through an oxide layer. CONSTITUTION:An Al wiring layer 206 extended to an SiO2 film 202 on an Si substrate 201 and connected to an impurity layer 203 is treated with oxygen plasma and covered with an Al2O3 film 207. An Si3N4 film 208 is piled up by a plasma reaction of SiH4 and NH3. A pad 209 is bored, and a lead 210 is connected to the pad, breaking through the Al2O3 film. This constitution brings a device excelling in hygro-resistance, because there exists Al2O3 on Al of the pad 209.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088662A JPS57202750A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088662A JPS57202750A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57202750A true JPS57202750A (en) | 1982-12-11 |
JPS6322462B2 JPS6322462B2 (en) | 1988-05-12 |
Family
ID=13949026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56088662A Granted JPS57202750A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57202750A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184720A (en) * | 2000-12-15 | 2002-06-28 | Murata Mfg Co Ltd | Method of manufacturing device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480679A (en) * | 1977-12-09 | 1979-06-27 | Nec Corp | Manufacture for semiconductor device |
-
1981
- 1981-06-09 JP JP56088662A patent/JPS57202750A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480679A (en) * | 1977-12-09 | 1979-06-27 | Nec Corp | Manufacture for semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184720A (en) * | 2000-12-15 | 2002-06-28 | Murata Mfg Co Ltd | Method of manufacturing device |
Also Published As
Publication number | Publication date |
---|---|
JPS6322462B2 (en) | 1988-05-12 |
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