JPS5457980A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5457980A JPS5457980A JP12482677A JP12482677A JPS5457980A JP S5457980 A JPS5457980 A JP S5457980A JP 12482677 A JP12482677 A JP 12482677A JP 12482677 A JP12482677 A JP 12482677A JP S5457980 A JPS5457980 A JP S5457980A
- Authority
- JP
- Japan
- Prior art keywords
- region
- wiring
- film
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To avoid useless power consumption, by reducing the wiring capacitance between the substrate and wiring, through the use of the operating region as floating condition by forming the electrode wiring via thick insulation film on the operating region formed on the semiconductor substrate. CONSTITUTION:On the N<+> type operating region 6 of the P type Si substrate 1 and on one P<+> type channel stopper region 5, Al wiring 2 is coated via thick SiO2 film 3, and a part of it is used for the bonding pad 4 connected to the external lead. Next, the N<+> type operating region 7 is placed at remote location from the region 6, and thin Si operating region 7 bridging at the end of the region 7 and in contact with the film 3 is provided between the regions 6 and 7, and the gate electrode 9 is fitted on it. After that, thick SiO2 film is placed from the end of the region 7 to another P<+> type channel stopper region 5, and the electrode 11 leading on the film from the region 7 is attached. Thus, the region 6 is made at floating state and the capacitance between the wiring 2 and the substrate 1 is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52124826A JPS6020899B2 (en) | 1977-10-18 | 1977-10-18 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52124826A JPS6020899B2 (en) | 1977-10-18 | 1977-10-18 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5457980A true JPS5457980A (en) | 1979-05-10 |
JPS6020899B2 JPS6020899B2 (en) | 1985-05-24 |
Family
ID=14895051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52124826A Expired JPS6020899B2 (en) | 1977-10-18 | 1977-10-18 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6020899B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469034A (en) * | 1987-08-26 | 1989-03-15 | Philips Nv | Semiconductor integrated circuit with decoupled d.c. wiring |
-
1977
- 1977-10-18 JP JP52124826A patent/JPS6020899B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6469034A (en) * | 1987-08-26 | 1989-03-15 | Philips Nv | Semiconductor integrated circuit with decoupled d.c. wiring |
Also Published As
Publication number | Publication date |
---|---|
JPS6020899B2 (en) | 1985-05-24 |
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