JPS5626539A - Reduced pressure chemical gas phase growth device - Google Patents
Reduced pressure chemical gas phase growth deviceInfo
- Publication number
- JPS5626539A JPS5626539A JP10186079A JP10186079A JPS5626539A JP S5626539 A JPS5626539 A JP S5626539A JP 10186079 A JP10186079 A JP 10186079A JP 10186079 A JP10186079 A JP 10186079A JP S5626539 A JPS5626539 A JP S5626539A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- quartz
- pipe
- reduced pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 238000004140 cleaning Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To obviate the needs for etching and cleaning a quartz pipe and a substrate holding tool with a solution by etching the inside of the quartz pipe by using a plasma etching method.
CONSTITUTION: Gas for CVD is compounded in a gas controlling portion 5 and then flowed into the quartz pipe 1 through a conduit 12. A gas blow-off ring 7 for CVD is provided with a conduit 13 through which the plasma is introduced. The plasma is obtained by treating a gas for plasma introduced from a bomb box 14 into a plasma-generator 15 by a micro wave oscillator and then introduced through the pipe 13 into the quarzt tube 8. Prior to the cleaning, the inside pressure of the quartz tube is sufficiently reduced, and the gas for generating the plasma is filled in the quartz tube and discharged through an exhaust pipe system into the outside.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10186079A JPS5626539A (en) | 1979-08-09 | 1979-08-09 | Reduced pressure chemical gas phase growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10186079A JPS5626539A (en) | 1979-08-09 | 1979-08-09 | Reduced pressure chemical gas phase growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5626539A true JPS5626539A (en) | 1981-03-14 |
Family
ID=14311759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10186079A Pending JPS5626539A (en) | 1979-08-09 | 1979-08-09 | Reduced pressure chemical gas phase growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5626539A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
-
1979
- 1979-08-09 JP JP10186079A patent/JPS5626539A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
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