JPS56110236A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS56110236A
JPS56110236A JP1229680A JP1229680A JPS56110236A JP S56110236 A JPS56110236 A JP S56110236A JP 1229680 A JP1229680 A JP 1229680A JP 1229680 A JP1229680 A JP 1229680A JP S56110236 A JPS56110236 A JP S56110236A
Authority
JP
Japan
Prior art keywords
tube
gas
reaction tube
feeder
cvd film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1229680A
Other languages
Japanese (ja)
Inventor
Nobutami Oka
Masafumi Miyagawa
Koji Suzukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1229680A priority Critical patent/JPS56110236A/en
Publication of JPS56110236A publication Critical patent/JPS56110236A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To provide a washing function for residual CVD film attaching on the internal wall of a tube by installing the means to feed a mixed gas for dry etching into a CVD device which grows a coating on a semiconductor wafer housed inside a reaction tube under gas phase. CONSTITUTION:A gas-phase growth gas feeder tube 26 and a feeder tube 27 for feeding a mixed gas for dry etching coupled with a plasma generation device 28 are provided in a reaction tube 23 equipped with a coil on the external periphery. Then CVD film is formed on the surface of a semiconductor base 14 by feeding a growth gas from the feeder tube 26. Following this process, an etching gas is fed through the feeder tube 27 to remove residual CVD film attaching on the internal wall of the reaction tube under etching effect. Thus it is possible to wash the reaction tube readily and quickly without removing the said tube.
JP1229680A 1980-02-04 1980-02-04 Cvd device Pending JPS56110236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1229680A JPS56110236A (en) 1980-02-04 1980-02-04 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1229680A JPS56110236A (en) 1980-02-04 1980-02-04 Cvd device

Publications (1)

Publication Number Publication Date
JPS56110236A true JPS56110236A (en) 1981-09-01

Family

ID=11801359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1229680A Pending JPS56110236A (en) 1980-02-04 1980-02-04 Cvd device

Country Status (1)

Country Link
JP (1) JPS56110236A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor
JPH0673348B2 (en) * 1991-06-14 1994-09-14 株式会社半導体エネルギー研究所 Cleaning method for plasma processing apparatus

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