JPS56110236A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPS56110236A JPS56110236A JP1229680A JP1229680A JPS56110236A JP S56110236 A JPS56110236 A JP S56110236A JP 1229680 A JP1229680 A JP 1229680A JP 1229680 A JP1229680 A JP 1229680A JP S56110236 A JPS56110236 A JP S56110236A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- gas
- reaction tube
- feeder
- cvd film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To provide a washing function for residual CVD film attaching on the internal wall of a tube by installing the means to feed a mixed gas for dry etching into a CVD device which grows a coating on a semiconductor wafer housed inside a reaction tube under gas phase. CONSTITUTION:A gas-phase growth gas feeder tube 26 and a feeder tube 27 for feeding a mixed gas for dry etching coupled with a plasma generation device 28 are provided in a reaction tube 23 equipped with a coil on the external periphery. Then CVD film is formed on the surface of a semiconductor base 14 by feeding a growth gas from the feeder tube 26. Following this process, an etching gas is fed through the feeder tube 27 to remove residual CVD film attaching on the internal wall of the reaction tube under etching effect. Thus it is possible to wash the reaction tube readily and quickly without removing the said tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229680A JPS56110236A (en) | 1980-02-04 | 1980-02-04 | Cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229680A JPS56110236A (en) | 1980-02-04 | 1980-02-04 | Cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56110236A true JPS56110236A (en) | 1981-09-01 |
Family
ID=11801359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1229680A Pending JPS56110236A (en) | 1980-02-04 | 1980-02-04 | Cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56110236A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281032A (en) * | 1985-10-03 | 1987-04-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH06140333A (en) * | 1991-06-14 | 1994-05-20 | Semiconductor Energy Lab Co Ltd | Method of cleaning plasma processor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
-
1980
- 1980-02-04 JP JP1229680A patent/JPS56110236A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281032A (en) * | 1985-10-03 | 1987-04-14 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH06140333A (en) * | 1991-06-14 | 1994-05-20 | Semiconductor Energy Lab Co Ltd | Method of cleaning plasma processor |
JPH0673348B2 (en) * | 1991-06-14 | 1994-09-14 | 株式会社半導体エネルギー研究所 | Cleaning method for plasma processing apparatus |
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