JPS5571695A - Production of epitaxial-grown wafer - Google Patents
Production of epitaxial-grown waferInfo
- Publication number
- JPS5571695A JPS5571695A JP14345178A JP14345178A JPS5571695A JP S5571695 A JPS5571695 A JP S5571695A JP 14345178 A JP14345178 A JP 14345178A JP 14345178 A JP14345178 A JP 14345178A JP S5571695 A JPS5571695 A JP S5571695A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- inlet
- epitaxial
- wafers
- hcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain epitaxial-grown wafers by setting substrates for growth in a reaction furnace and feeding a feed gas and a carrier gas mixed with a hydrogen halide gas such as HCl or HBr to prevent occurrence of protrusive deffects of the semiconductor substrates.
CONSTITUTION: Semiconductor substrates 3 such as Si wafers are horizontally mounted on rotatable susceptor 4 in reaction furnace 2 made of quartz or the like, and substrate 3 are heated to a suitable temp. with high frequency coils 6. H2 from inlet 7a, a feed gas such as SiHCl3 or SiH4 from inlet 7b and a hydrogen halide gas such as HCl from inlet 7c are taken in simulatneously, and the mixed gas is fed from nozzle 5 through valve 8 and pipe 7. By the etching action and preventing action of the halogen cpd. polysilicon, Si cpds., etc. are etched, whereby furnace washing frequency is reduced to shorten production time, and epitaxial-grown wafers are obtd. at a low cost.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14345178A JPS5571695A (en) | 1978-11-22 | 1978-11-22 | Production of epitaxial-grown wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14345178A JPS5571695A (en) | 1978-11-22 | 1978-11-22 | Production of epitaxial-grown wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571695A true JPS5571695A (en) | 1980-05-29 |
Family
ID=15338999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14345178A Pending JPS5571695A (en) | 1978-11-22 | 1978-11-22 | Production of epitaxial-grown wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571695A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3342586A1 (en) * | 1982-11-27 | 1984-05-30 | Toshiba Kikai K.K., Tokyo | Epitaxial device |
US5439844A (en) * | 1986-04-14 | 1995-08-08 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5593497A (en) * | 1986-03-31 | 1997-01-14 | Canon Kabushiki Kaisha | Method for forming a deposited film |
US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
JP2014103328A (en) * | 2012-11-21 | 2014-06-05 | Shin Etsu Handotai Co Ltd | Contamination detection method of vapor phase growth apparatus and method of manufacturing epitaxial wafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114429A (en) * | 1974-07-25 | 1976-02-04 | Takahashi Jugen | Hitsukigukeesutono seizohoho |
-
1978
- 1978-11-22 JP JP14345178A patent/JPS5571695A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114429A (en) * | 1974-07-25 | 1976-02-04 | Takahashi Jugen | Hitsukigukeesutono seizohoho |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3342586A1 (en) * | 1982-11-27 | 1984-05-30 | Toshiba Kikai K.K., Tokyo | Epitaxial device |
DE3342586C2 (en) * | 1982-11-27 | 1986-08-28 | Toshiba Kikai K.K., Tokio/Tokyo | Apparatus for gas phase epitaxy |
US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
US5593497A (en) * | 1986-03-31 | 1997-01-14 | Canon Kabushiki Kaisha | Method for forming a deposited film |
US5439844A (en) * | 1986-04-14 | 1995-08-08 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2014103328A (en) * | 2012-11-21 | 2014-06-05 | Shin Etsu Handotai Co Ltd | Contamination detection method of vapor phase growth apparatus and method of manufacturing epitaxial wafer |
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