JPS5571695A - Production of epitaxial-grown wafer - Google Patents

Production of epitaxial-grown wafer

Info

Publication number
JPS5571695A
JPS5571695A JP14345178A JP14345178A JPS5571695A JP S5571695 A JPS5571695 A JP S5571695A JP 14345178 A JP14345178 A JP 14345178A JP 14345178 A JP14345178 A JP 14345178A JP S5571695 A JPS5571695 A JP S5571695A
Authority
JP
Japan
Prior art keywords
gas
inlet
epitaxial
wafers
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14345178A
Other languages
Japanese (ja)
Inventor
Yushi Kase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14345178A priority Critical patent/JPS5571695A/en
Publication of JPS5571695A publication Critical patent/JPS5571695A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain epitaxial-grown wafers by setting substrates for growth in a reaction furnace and feeding a feed gas and a carrier gas mixed with a hydrogen halide gas such as HCl or HBr to prevent occurrence of protrusive deffects of the semiconductor substrates.
CONSTITUTION: Semiconductor substrates 3 such as Si wafers are horizontally mounted on rotatable susceptor 4 in reaction furnace 2 made of quartz or the like, and substrate 3 are heated to a suitable temp. with high frequency coils 6. H2 from inlet 7a, a feed gas such as SiHCl3 or SiH4 from inlet 7b and a hydrogen halide gas such as HCl from inlet 7c are taken in simulatneously, and the mixed gas is fed from nozzle 5 through valve 8 and pipe 7. By the etching action and preventing action of the halogen cpd. polysilicon, Si cpds., etc. are etched, whereby furnace washing frequency is reduced to shorten production time, and epitaxial-grown wafers are obtd. at a low cost.
COPYRIGHT: (C)1980,JPO&Japio
JP14345178A 1978-11-22 1978-11-22 Production of epitaxial-grown wafer Pending JPS5571695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14345178A JPS5571695A (en) 1978-11-22 1978-11-22 Production of epitaxial-grown wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14345178A JPS5571695A (en) 1978-11-22 1978-11-22 Production of epitaxial-grown wafer

Publications (1)

Publication Number Publication Date
JPS5571695A true JPS5571695A (en) 1980-05-29

Family

ID=15338999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14345178A Pending JPS5571695A (en) 1978-11-22 1978-11-22 Production of epitaxial-grown wafer

Country Status (1)

Country Link
JP (1) JPS5571695A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342586A1 (en) * 1982-11-27 1984-05-30 Toshiba Kikai K.K., Tokyo Epitaxial device
US5439844A (en) * 1986-04-14 1995-08-08 Canon Kabushiki Kaisha Process for forming deposited film
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JP2014103328A (en) * 2012-11-21 2014-06-05 Shin Etsu Handotai Co Ltd Contamination detection method of vapor phase growth apparatus and method of manufacturing epitaxial wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114429A (en) * 1974-07-25 1976-02-04 Takahashi Jugen Hitsukigukeesutono seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114429A (en) * 1974-07-25 1976-02-04 Takahashi Jugen Hitsukigukeesutono seizohoho

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342586A1 (en) * 1982-11-27 1984-05-30 Toshiba Kikai K.K., Tokyo Epitaxial device
DE3342586C2 (en) * 1982-11-27 1986-08-28 Toshiba Kikai K.K., Tokio/Tokyo Apparatus for gas phase epitaxy
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
US5439844A (en) * 1986-04-14 1995-08-08 Canon Kabushiki Kaisha Process for forming deposited film
JP2014103328A (en) * 2012-11-21 2014-06-05 Shin Etsu Handotai Co Ltd Contamination detection method of vapor phase growth apparatus and method of manufacturing epitaxial wafer

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