JPH0410224Y2 - - Google Patents
Info
- Publication number
- JPH0410224Y2 JPH0410224Y2 JP1984126337U JP12633784U JPH0410224Y2 JP H0410224 Y2 JPH0410224 Y2 JP H0410224Y2 JP 1984126337 U JP1984126337 U JP 1984126337U JP 12633784 U JP12633784 U JP 12633784U JP H0410224 Y2 JPH0410224 Y2 JP H0410224Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- melt
- shape
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 230000012010 growth Effects 0.000 claims description 17
- 239000000155 melt Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 230000010261 cell growth Effects 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は各種インコングルエントメルトからの
単結晶を育成するトツプシーデイング単結晶育成
装置に関する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a top seeding single crystal growth apparatus for growing single crystals from various incongruent melts.
従来技術
引上げ棒と回転ルツボとを互いに反対方向に回
転させるトツプシーデイング単結晶育成装置の場
合、従来のルツボは、ルツボ内面が円筒状のもの
であり、これを回転させて、引上げ棒を溶融液頂
部に押入し、引上げ棒を徐々に引上げることによ
つて単結晶を育成していた。Prior Art In the case of a top seeding single crystal growth apparatus in which a pulling rod and a rotary crucible are rotated in opposite directions, the conventional crucible has a cylindrical inner surface, and is rotated to melt the pulling rod. Single crystals were grown by pushing into the top of the liquid and gradually pulling up a pulling rod.
この育成装置によると引上げる結晶に熱的均一
性を保つ効果はあるが、ルツボ内面形状が円筒状
であるため、溶融液の混合攪拌の作用はあまりな
いので、固溶体単結晶の育成につきもののセルグ
ロースは取り除くことができない欠点があつた。 Although this growth device has the effect of maintaining thermal uniformity in the crystals being pulled, since the inner surface of the crucible is cylindrical, it does not have much effect on mixing and stirring the melt, which is a problem that occurs in the growth of solid solution single crystals. Growth had drawbacks that could not be removed.
考案の目的
本考案の目的は従来装置における欠点をなくし
たトツプシーデイング単結晶育成装置を提供する
にある。Purpose of the invention The purpose of the present invention is to provide a top seeding single crystal growth apparatus that eliminates the drawbacks of conventional apparatuses.
考案の構成
本考案者の研究によれば、インコングルエント
メルト（単結晶と組成の異なるメルト）の場合、
単結晶の引上げに伴い、ルツボ内のメルト（溶融
液）の組成が次々と変化していくので、ロルト全
体を常に均一に攪拌する必要があるが、従来のル
ツボ形状について調べたところ、第２図の形状の
場合にはメルトの混合攪拌の作用は殆どなく、或
いは特開昭57−38398号公報、同57−188498号公
報、同57−191295号公報などに示されている形状
では、一応攪拌できるものの、乱流が発生する
等、メルト全体を均一に攪拌することができない
ことが判明した。Structure of the invention According to the research of the inventor, in the case of incongruent melts (melts with a composition different from that of a single crystal),
As the single crystal is pulled, the composition of the melt in the crucible changes one after another, so it is necessary to constantly stir the entire lolt uniformly. In the case of the shape shown in the figure, there is almost no effect of mixing and stirring the melt, or in the shape shown in JP-A-57-38398, JP-A-57-188498, JP-A-57-191295, etc. Although it was possible to stir the melt, it was found that the entire melt could not be stirred uniformly due to turbulent flow.
そこで、本考案者は、乱流が生じないでメルト
全体を均一に攪拌し得るルツボ内面形状について
鋭意研究を重ねた結果、ルツボ内面形状を円錐形
状、放物体形状または半楕円形状にすることによ
り、メルト全体にわたつて左右対称的に循環軌跡
を描く強制対流を生じさせることができることを
見い出したものである。 Therefore, as a result of intensive research into the inner surface shape of the crucible that can uniformly stir the entire melt without causing turbulence, the inventor of the present invention determined that the inner surface shape of the crucible could be made into a conical shape, a parabolic shape, or a semi-elliptical shape. They discovered that it is possible to generate forced convection that traces a symmetrical circulation trajectory throughout the melt.
以下に本考案を図面を用いて説明する。第１図
に本考案単結晶育成装置のルツボ内面の底部中心
を凹状とし、かつ、ルツボ曲面がルツボ回転軸に
対して対称的な円錐状とした一実施態様の縦断側
面図を示し、第２図は従来の単結晶育成装置の縦
断側面図を示す。 The present invention will be explained below using the drawings. FIG. 1 shows a longitudinal sectional side view of an embodiment of the single crystal growth apparatus of the present invention in which the bottom center of the inner surface of the crucible is concave and the crucible curved surface is conical and symmetrical with respect to the crucible rotation axis. The figure shows a longitudinal side view of a conventional single crystal growth apparatus.
図中、１はルツボ、２はルツボ内面、３は回転
軸、４は引上げ結晶、５は溶融液、６はルツボ保
持台を示す。 In the figure, 1 is a crucible, 2 is an inner surface of the crucible, 3 is a rotating shaft, 4 is a pulled crystal, 5 is a melt, and 6 is a crucible holder.
本考案の単結晶育成装置で回転軸３を回転させ
ると、溶融液５は粘性があるため、ルツボの内面
２に引きずられて回転する。その結果、遠心力に
よつてルツボの内面に引寄せられる。次にルツボ
の内面からの抗力の垂直方向成分によつて内側面
に沿つて上方に昇つて行き、図の矢印で示すよう
に強制対流が起り、ルツボ内の溶融液が十分に混
合される。これを引上げ結晶で引上げ結晶させる
均一組成の単結晶が容易に得られる。 When the rotating shaft 3 is rotated in the single crystal growth apparatus of the present invention, the melt 5 is dragged by the inner surface 2 of the crucible and rotates because of its viscosity. As a result, it is drawn to the inner surface of the crucible by centrifugal force. Next, due to the vertical component of the drag force from the crucible's inner surface, it rises upward along the inner surface, causing forced convection as shown by the arrow in the figure, and the melt in the crucible is thoroughly mixed. By pulling and crystallizing this with a pulling crystal, a single crystal with a uniform composition can be easily obtained.
これに対し、第２図に示す従来の円筒状の内面
の装置では、強制対流が起らない。従つて、多成
分系の溶融液の固液界面における組成変動によつ
て、育成結晶のインクルージヨン、径の変化ある
いはセルグロースが起つていた。本考案の育成装
置においては、前記のような強制対流により、固
液界面における溶融液の組成の変化を防止するこ
とによつて、前記の欠点を取除くことができる。 In contrast, in the conventional cylindrical inner surface device shown in FIG. 2, forced convection does not occur. Therefore, changes in composition at the solid-liquid interface of a multi-component melt have caused inclusions, changes in diameter, or cell growth in the grown crystals. In the growth apparatus of the present invention, the above-mentioned drawbacks can be eliminated by preventing changes in the composition of the melt at the solid-liquid interface using forced convection as described above.
ルツボ内面の曲面形状が円錐形状ばかりでな
く、放物体形状、半楕円形状であつても同様な対
流が起り、同様に作用する。 Similar convection occurs and acts in the same way even when the curved surface shape of the crucible inner surface is not only a conical shape but also a parabolic shape or a semi-elliptic shape.
本考案の育成装置を使用して、KNbO3と
KTaO3の結晶粉末をモル比で68：32に混合し、
1370℃で溶融した溶融液600ｇを、100c.c.のイリジ
ウムルツボ中に入れ、ルツボを10rpmで回転しな
がら、引上げ棒を挿入して、0.5mm／hrで引上げ
て20×20×50mm3の単結晶を育成した。この単結晶
EPMAの測定の結果、結晶成長方向には組成の
変化は全くなく、またセルグロースも生じなかつ
た。また結晶の径の変化もなかつた。 Using the growth device of this invention, KNbO 3 and
KTaO3 crystal powder was mixed in a molar ratio of 68:32,
Put 600g of the molten liquid melted at 1370℃ into a 100cc . Single crystals were grown. This single crystal
As a result of EPMA measurement, there was no change in composition in the direction of crystal growth, and no cell growth occurred. Moreover, there was no change in the crystal diameter.
考案の効果
本考案の単結晶育成装置によると、従来の単結
晶育成装置においては多成分系単結晶の育成に際
しては、必ず生じていたセルグロース、インクル
ージヨンあるいは結晶の径の変化を防止し得られ
る。従つて、圧電体として最高の特性を持つ
LiTaO3−LiNbO3系固溶体単結晶、波長可変レ
ーザーとして要請されているGaAs−AlAs系固溶
体単結晶のセルグロースのない、かつ結晶の径の
変化のないものが容易に得られ、工業生産を容易
にする優れた効果を有する。Effects of the invention According to the single crystal growth apparatus of the present invention, it is possible to prevent cell growth, inclusions, or changes in crystal diameter that always occur in conventional single crystal growth apparatuses when growing multicomponent single crystals. It will be done. Therefore, it has the best properties as a piezoelectric material.
LiTaO 3 -LiNbO 3 system solid solution single crystal, GaAs-AlAs system solid solution single crystal required for wavelength tunable laser, without cell growth and without change in crystal diameter, can be easily obtained, facilitating industrial production. It has an excellent effect on
第１図は本考案の単結晶育成装置の一実施態様
の縦断側面図、第２図は従来の単結晶育成装置を
示す。
１……ルツボ、２……ルツボ内面、３……回転
軸、４……引上げ結晶、５……溶融液、６……ル
ツボ保持台。
FIG. 1 is a longitudinal sectional side view of an embodiment of the single crystal growth apparatus of the present invention, and FIG. 2 shows a conventional single crystal growth apparatus. 1... Crucible, 2... Crucible inner surface, 3... Rotating shaft, 4... Pulled crystal, 5... Molten liquid, 6... Crucible holding stand.
Claims (1)
転させ、トツプシーデイングによつて単結晶と組
成が異なるメルトから単結晶を育成する装置にお
いて、メルトと接するルツボ内面形状を、ルツボ
底部中心を除くルツボ内側面がルツボ回転軸に対
して対称的な円錐形状、放物体形状または半楕円
形状とし、かつ、該形状が凹状のルツボ底部中心
にて滑らかに連続している形状にしたことを特徴
とする単結晶育成装置。 In an apparatus that rotates a pulling rod and a rotary crucible in opposite directions to grow a single crystal from a melt with a composition different from that of a single crystal by top seeding, the inner surface of the crucible in contact with the melt is The inner surface has a conical shape, a parabolic shape, or a semi-elliptical shape that is symmetrical with respect to the crucible rotation axis, and the shape is smoothly continuous at the center of the concave bottom of the crucible. Single crystal growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12633784U JPS6143274U (en) | 1984-08-20 | 1984-08-20 | Single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12633784U JPS6143274U (en) | 1984-08-20 | 1984-08-20 | Single crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6143274U JPS6143274U (en) | 1986-03-20 |
| JPH0410224Y2 true JPH0410224Y2 (en) | 1992-03-13 |
Family
ID=30685016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12633784U Granted JPS6143274U (en) | 1984-08-20 | 1984-08-20 | Single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6143274U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5738398A (en) * | 1980-08-12 | 1982-03-03 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS57188498A (en) * | 1981-05-15 | 1982-11-19 | Toshiba Ceramics Co Ltd | Quartz crucible for pulling up silicon single crystal |
| JPS57191295A (en) * | 1981-04-29 | 1982-11-25 | Philips Nv | Method of pulling out silicon rod and semiconductor device manufactured therefrom |
-
1984
- 1984-08-20 JP JP12633784U patent/JPS6143274U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5738398A (en) * | 1980-08-12 | 1982-03-03 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS57191295A (en) * | 1981-04-29 | 1982-11-25 | Philips Nv | Method of pulling out silicon rod and semiconductor device manufactured therefrom |
| JPS57188498A (en) * | 1981-05-15 | 1982-11-19 | Toshiba Ceramics Co Ltd | Quartz crucible for pulling up silicon single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6143274U (en) | 1986-03-20 |
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