BE795938A - METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR - Google Patents

METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR

Info

Publication number
BE795938A
BE795938A BE795938DA BE795938A BE 795938 A BE795938 A BE 795938A BE 795938D A BE795938D A BE 795938DA BE 795938 A BE795938 A BE 795938A
Authority
BE
Belgium
Prior art keywords
monocristalline
dislocation
bar
free
manufacturing
Prior art date
Application number
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE795938A publication Critical patent/BE795938A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE795938D 1972-03-01 METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR BE795938A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722209869 DE2209869B1 (en) 1972-03-01 1972-03-01 PROCESS FOR MANUFACTURING A DISPLACEMENT-FREE SINGLE CRYSTALLINE GALLIUM ARSENIDE ROD

Publications (1)

Publication Number Publication Date
BE795938A true BE795938A (en) 1973-08-27

Family

ID=5837589

Family Applications (1)

Application Number Title Priority Date Filing Date
BE795938D BE795938A (en) 1972-03-01 METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR

Country Status (7)

Country Link
US (1) US3819421A (en)
JP (1) JPS48102569A (en)
BE (1) BE795938A (en)
CH (1) CH591893A5 (en)
DE (1) DE2209869B1 (en)
GB (1) GB1408215A (en)
NL (1) NL7301465A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
IT1207497B (en) * 1985-05-29 1989-05-25 Montedison Spa MONO CRYSTALS OF GALLIO ARSENIURO WITH LOW DENSITY OF DISLOCATIONS AND HIGH PURITY.
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
JPH09255485A (en) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd Production of single crystal and seed crystal
JP3850500B2 (en) * 1996-12-06 2006-11-29 コマツ電子金属株式会社 Seed crystal holder for single crystal puller with magnetic field application
CN110528061A (en) * 2018-05-23 2019-12-03 中国科学院金属研究所 A kind of method and special equipment of laser auxiliary heating growing large-size crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
DE1233828B (en) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Process for the production, cleaning and / or doping of monocrystalline or polycrystalline semiconductor compounds
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
FR1568042A (en) * 1968-01-18 1969-05-23

Also Published As

Publication number Publication date
US3819421A (en) 1974-06-25
GB1408215A (en) 1975-10-01
JPS48102569A (en) 1973-12-22
NL7301465A (en) 1973-09-04
CH591893A5 (en) 1977-10-14
DE2209869C2 (en) 1974-01-24
DE2209869B1 (en) 1973-06-20

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