GB1408215A - Production of monocrystalline gallium arsenide rods - Google Patents

Production of monocrystalline gallium arsenide rods

Info

Publication number
GB1408215A
GB1408215A GB983673A GB983673A GB1408215A GB 1408215 A GB1408215 A GB 1408215A GB 983673 A GB983673 A GB 983673A GB 983673 A GB983673 A GB 983673A GB 1408215 A GB1408215 A GB 1408215A
Authority
GB
United Kingdom
Prior art keywords
gallium arsenide
rod
seed crystal
production
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB983673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1408215A publication Critical patent/GB1408215A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1408215 Production of monocrystalline gallium arsenide SIEMENS AG 28 Feb 1973 [1 March 1972] 9836/73 Heading B1S A monocrystalline rod of gallium arsenide of high crystal perfection is produced by a method in which the rod is pulled, by means of a seed crystal, from a melt in an inductively heated crucible, the pulling being carried out in a closed quartz tube with the vertical and rotational positioning being controlled by means of magnetic coupling to a seed holder so that the pulled rod tapers below the seed crystal and increases progressively to the required diameter, the seed crystal diameter being in the range 2-10 mm, the quartz tube is sealed with an atmoshere therein of an inert gas at 0.2-0.8 atm, having a thermal conductivity of less than or equal to 0.18 mW cm<SP>-1</SP> K<SP>-1</SP> at 300‹K and 0.3 mW cm<SP>-1</SP> K<SP>-1</SP> at 1500‹K, and free arsenic such that the arsenic partial pressure during pulling is 0.8- 1.5 atm. The inert gases used are Krypton, xenon, argon and nitrogen.
GB983673A 1972-03-01 1973-02-28 Production of monocrystalline gallium arsenide rods Expired GB1408215A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722209869 DE2209869B1 (en) 1972-03-01 1972-03-01 PROCESS FOR MANUFACTURING A DISPLACEMENT-FREE SINGLE CRYSTALLINE GALLIUM ARSENIDE ROD

Publications (1)

Publication Number Publication Date
GB1408215A true GB1408215A (en) 1975-10-01

Family

ID=5837589

Family Applications (1)

Application Number Title Priority Date Filing Date
GB983673A Expired GB1408215A (en) 1972-03-01 1973-02-28 Production of monocrystalline gallium arsenide rods

Country Status (7)

Country Link
US (1) US3819421A (en)
JP (1) JPS48102569A (en)
BE (1) BE795938A (en)
CH (1) CH591893A5 (en)
DE (1) DE2209869B1 (en)
GB (1) GB1408215A (en)
NL (1) NL7301465A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
IT1207497B (en) * 1985-05-29 1989-05-25 Montedison Spa MONO CRYSTALS OF GALLIO ARSENIURO WITH LOW DENSITY OF DISLOCATIONS AND HIGH PURITY.
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
JPH09255485A (en) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd Production of single crystal and seed crystal
JP3850500B2 (en) * 1996-12-06 2006-11-29 コマツ電子金属株式会社 Seed crystal holder for single crystal puller with magnetic field application
CN110528061A (en) * 2018-05-23 2019-12-03 中国科学院金属研究所 A kind of method and special equipment of laser auxiliary heating growing large-size crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
DE1233828B (en) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Process for the production, cleaning and / or doping of monocrystalline or polycrystalline semiconductor compounds
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
FR1568042A (en) * 1968-01-18 1969-05-23

Also Published As

Publication number Publication date
JPS48102569A (en) 1973-12-22
NL7301465A (en) 1973-09-04
US3819421A (en) 1974-06-25
DE2209869C2 (en) 1974-01-24
BE795938A (en) 1973-08-27
CH591893A5 (en) 1977-10-14
DE2209869B1 (en) 1973-06-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee