GB998942A - Process for the preparation of monocrystalline semiconducting elements - Google Patents

Process for the preparation of monocrystalline semiconducting elements

Info

Publication number
GB998942A
GB998942A GB30938/63A GB3093863A GB998942A GB 998942 A GB998942 A GB 998942A GB 30938/63 A GB30938/63 A GB 30938/63A GB 3093863 A GB3093863 A GB 3093863A GB 998942 A GB998942 A GB 998942A
Authority
GB
United Kingdom
Prior art keywords
sihcl3
tmax
gas
semi
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30938/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB998942A publication Critical patent/GB998942A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<PICT:0998942/C1/1> <PICT:0998942/C1/2> A monocrystalline semi-conductor element is deposited from a gas on to a rod-shaped carrier of the same element heated inductively (at Ta) below the melting point of the element (Ts) and above the temperature at which the rate of deposition is a maximum (Tmax); the gas being selected so that, for a certain range of increasing temperature, the rate of decomposition decreases (see Fig. 1). The semi-conductor element may be Si, Ge or B. The gaseous semi-conductor compound may be a wholly or partially halogenated hydride, e.g. SiCl4, SiHCl3 or SiH2Cl2, used in amount up to 5 mole per cent, and diluted with H2; each has a different Tmax (with 2 and 5 mole per cent SiHCl3, Tmax is given as 1100 DEG and 1400 DEG C. resp.). A doping element, or its compound with halogen or hydrogen may be included in the gas. Experimental details are as given in Specification 880,559. In Fig. 2, H2 is passed through vessel 8 containing liquid SiHCl3, and the mixture of 2% SiHCl3 and 98% H2 passes through inlet 4 into quartz vessel 1 containing carrier 3 heated by H.F./A.C. induction coils 6 to 1250 DEG C. The carrier may be preheated in H2. Specifications 809,250 and 908,373 also are referred to.ALSO:<PICT:0998942/C6-C7/1> <PICT:0998942/C6-C7/2> A monocrystalline semi-conductor element is deposited from a gas on to a rod-shaped carrier of the same element heated inductively (at Ta) below the melting point of the element Ts and above the temperature at which the rate of deposition is a maximum (Tmax); the gas being selected so that, for a certain range of increasing temperature, the rate of decomposition decreases (see Fig. 1). The semi-conductor element may be Si, Ge or B. The gaseous semi-conductor compound may be a wholly or partially halogenated hydride, e.g. SiCl4, SiHCl3 or SiH2Cl2, used in amount up to 5 mole per cent and diluted with H2; each has a different Tmax (with 2 and 5 mole per cent SiHCl3, Tmax is given as 1100 DEG C. and 1400 DEG C. respectively). A doping element, or its compound with halogen or hydrogen, may be included in the gas. Experimental details are as given in Specification 880,559. In Fig. 2, H2 is passed through vessel 8 containing liquid SiHCl3, and the mixture of 2% SiHCl2 and 98% H2 passes through inlet 4 into quartz vessel 1 containing carrier 3 heated by H.F./A.C. induction coils 6 to 1250 DEG C. The carrier may be preheated in H2. Specifications 809,250 and 908,373 also are referred to.
GB30938/63A 1962-08-24 1963-08-06 Process for the preparation of monocrystalline semiconducting elements Expired GB998942A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0081093 1962-08-24

Publications (1)

Publication Number Publication Date
GB998942A true GB998942A (en) 1965-07-21

Family

ID=7509332

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30938/63A Expired GB998942A (en) 1962-08-24 1963-08-06 Process for the preparation of monocrystalline semiconducting elements

Country Status (6)

Country Link
US (1) US3341359A (en)
CH (1) CH430665A (en)
DE (1) DE1444526B2 (en)
FR (1) FR1397154A (en)
GB (1) GB998942A (en)
SE (1) SE337973B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0794561A1 (en) * 1996-03-04 1997-09-10 Shin-Etsu Handotai Company Limited Method of growing a silicon single crystal thin film in vapor phase

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113118C (en) * 1954-05-18 1900-01-01
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction
NL256017A (en) * 1959-09-23 1900-01-01
NL260072A (en) * 1960-01-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0794561A1 (en) * 1996-03-04 1997-09-10 Shin-Etsu Handotai Company Limited Method of growing a silicon single crystal thin film in vapor phase
US5868833A (en) * 1996-03-04 1999-02-09 Shin-Etsu Handotai Co., Ltd. Method of producing silicon single crystal thin film

Also Published As

Publication number Publication date
FR1397154A (en) 1965-04-30
US3341359A (en) 1967-09-12
DE1444526B2 (en) 1971-02-04
DE1444526A1 (en) 1968-10-17
CH430665A (en) 1967-02-28
SE337973B (en) 1971-08-23

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