GB983322A - Improvements in and relating to the deposition of semi-conducting material from the gas phase - Google Patents

Improvements in and relating to the deposition of semi-conducting material from the gas phase

Info

Publication number
GB983322A
GB983322A GB22174/62A GB2217462A GB983322A GB 983322 A GB983322 A GB 983322A GB 22174/62 A GB22174/62 A GB 22174/62A GB 2217462 A GB2217462 A GB 2217462A GB 983322 A GB983322 A GB 983322A
Authority
GB
United Kingdom
Prior art keywords
carbon
semi
holders
pure
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22174/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB983322A publication Critical patent/GB983322A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B11/00—Bell-type furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens, or the like for the charge within the furnace

Abstract

<PICT:0983322/C1/1> The carbon holders, used to support the ends of a longitudinally extending carrier of a semi-conducting material, are given a compact coating of an ultra-pure element of Group IV having atomic weight less than 80, e.g. C, Si, or Ge. The coating is stated to prevent the absorption in the carbon holder of, e.g. traces of phosphorus, which impair the properties of the semi-conductor carrier. The apparatus of the type described in Specification 861,135 comprises a quartz dome 4 mounted on a water-cooled base 5, housing two semi-conductor elements 2, 3 supported in the carbon holders 11, 12. These are connected to a power source, whereby the carriers and bridging piece 6 are electrically heated. Carbon is deposited on the holders by admitting through a tube 13 a mixture of pure hydrocarbons (cyclohexane, benzene) and N, by which cracked products are formed and pure C is deposited. Alternatively, Si or Ge are deposited from a mixture of hydrogen and their halide compounds, e.g. SiCl4 or silico-chloroform using a temperature of 1,100 DEG to 1,200 DEG C. for Si and 850 DEG C. for Ge. German Specification 865,160 also is referred to.ALSO:The carbon holders, used to support the ends of longitudinally extending carriers of semiconducting material, are given a compact coating of an ultra-pure element of Group IV of atomic weight less than 80, e.g. C, Si or Ge. The coating prevents absorption in the carbon holder of, e.g., traces of phosphorus, which impair the properties of the semi-conductor carrier. The apparatus of the kind described in Specification 861,135 comprises a quartz dome mounted on a water-cooled base 5, housing two semi-conductor elements 2, 3 supported in the carbon holders 11, 12 which are connected <PICT:0983322/C6-C7/1> through tubes 7 and 8 (the latter insulated from the base) to a power source, whereby the elements 2, 3 and bridging piece 6 are electrically heated. The holders may be coated with ultra-pure carbon by passing in through tube 13 hydrocarbons and N, by which cracked products including pure C are formed and the latter coated on the holder. Alternatively Si or Ge may be deposited from their halide compounds and hydrogen, at a temperature of 1100-1200 DEG C. for Si, and 850 DEG C. for Ge. German Specification 865,160 also is referred to.
GB22174/62A 1961-06-16 1962-06-07 Improvements in and relating to the deposition of semi-conducting material from the gas phase Expired GB983322A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES74363A DE1205950B (en) 1961-06-16 1961-06-16 Holder in a device for the deposition of semiconductor material from the gas phase on rod-shaped carriers made of semiconductor material of the same lattice structure and method for their production

Publications (1)

Publication Number Publication Date
GB983322A true GB983322A (en) 1965-02-17

Family

ID=7504598

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22174/62A Expired GB983322A (en) 1961-06-16 1962-06-07 Improvements in and relating to the deposition of semi-conducting material from the gas phase

Country Status (4)

Country Link
BE (1) BE618986A (en)
CH (1) CH400716A (en)
DE (1) DE1205950B (en)
GB (1) GB983322A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102428028A (en) * 2009-05-18 2012-04-25 Kgt石墨科技有限公司 Support cone for silicon seed bars
CN112795898A (en) * 2020-12-29 2021-05-14 杭州电子科技大学 Preparation method of boron and nitrogen co-doped tungsten disulfide film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE923655C (en) * 1951-10-26 1955-02-17 Norton Ges M B H Deutsche Process for cladding carbonaceous objects with silicon carbide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102428028A (en) * 2009-05-18 2012-04-25 Kgt石墨科技有限公司 Support cone for silicon seed bars
CN102428028B (en) * 2009-05-18 2014-04-23 Kgt石墨科技有限公司 Support cone for silicon seed bars
TWI450860B (en) * 2009-05-18 2014-09-01 Kgt Graphit Technologie Gmbh Support cone for silicon seed bars
CN112795898A (en) * 2020-12-29 2021-05-14 杭州电子科技大学 Preparation method of boron and nitrogen co-doped tungsten disulfide film

Also Published As

Publication number Publication date
CH400716A (en) 1965-10-15
BE618986A (en) 1962-12-17
DE1205950B (en) 1965-12-02

Similar Documents

Publication Publication Date Title
US3293074A (en) Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
GB889192A (en) Improvements in or relating to processes and apparatus for the production of ultra-pure semi-conductor substances
GB795191A (en) Improvements in or relating to processes for the production of very pure crystallinesubstances
US3171755A (en) Surface treatment of high-purity semiconductor bodies
GB1073555A (en) Texture-free polycrystalline silicon and processes for the manufacture thereof
GB1039748A (en) Improvements relating to methods of growing silicon carbide crystals epitaxially
McElcheran et al. The photolysis of methyl cyanide at 1849 Å
GB991184A (en) Apparatus for the production of pure silicon or germanium
GB656454A (en) Improvements in light-sensitive electrical devices and thermistors
GB983322A (en) Improvements in and relating to the deposition of semi-conducting material from the gas phase
GB1016578A (en) Improvements in or relating to processes for the production of high purity monocrystalline silicon
GB1181935A (en) Improvements in or relating to Devices for the Heat-Treatment of Plate-like Semiconductor Bodies
GB997336A (en) Improvements in or relating to apparatus for the preparation of rod-shaped members of semiconductor material of very high purity
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
US3432330A (en) Pyrolytic vacuum deposition from gases
GB975542A (en) Vapor deposition process
GB1071366A (en) Improvements in and relating to vapour transport of semiconductor materials
GB1105870A (en) Manufacture of silicon carbide ribbons
GB990417A (en) Semi-conductor devices
GB1237952A (en)
GB1128556A (en) Improvements in or relating to the manufacture of high-purity crystalline materials
GB977003A (en) Improvements in or relating to semi-conductor arrangements
JPS55127080A (en) Photoconductive element
GB929074A (en) A process for the production of extremely pure semi-conductor material
GB998942A (en) Process for the preparation of monocrystalline semiconducting elements