CN112795898A - Preparation method of boron and nitrogen co-doped tungsten disulfide film - Google Patents
Preparation method of boron and nitrogen co-doped tungsten disulfide film Download PDFInfo
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- CN112795898A CN112795898A CN202011590101.0A CN202011590101A CN112795898A CN 112795898 A CN112795898 A CN 112795898A CN 202011590101 A CN202011590101 A CN 202011590101A CN 112795898 A CN112795898 A CN 112795898A
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 62
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 33
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000012159 carrier gas Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 10
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 238000005086 pumping Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 7
- -1 boron ammonia alkane Chemical class 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000003921 oil Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000010431 corundum Substances 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical group O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 8
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 239000002243 precursor Substances 0.000 abstract description 4
- 230000000844 anti-bacterial effect Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- YPDSOAPSWYHANB-UHFFFAOYSA-N [N].[F] Chemical compound [N].[F] YPDSOAPSWYHANB-UHFFFAOYSA-N 0.000 description 1
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 description 1
- CQBLUJRVOKGWCF-UHFFFAOYSA-N [O].[AlH3] Chemical compound [O].[AlH3] CQBLUJRVOKGWCF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VJPLIHZPOJDHLB-UHFFFAOYSA-N lead titanium Chemical compound [Ti].[Pb] VJPLIHZPOJDHLB-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation method of a boron and nitrogen co-doped tungsten disulfide film; WS of the invention2Putting the solid powder in a quartz boat, and putting a substrate in the downstream direction of carrier gas airflow of the quartz boat, wherein the horizontal distance from the substrate to the quartz boat is 20 cm; and (3) putting the borazane into a quartz test tube, locating the borazane at the upstream end of the carrier gas of the quartz tube, heating and insulating the quartz boat and the quartz test tube for a period of time, and cooling to obtain the boron and nitrogen co-doped tungsten disulfide film. This patent uses tungsten sulfide (WS)2) The solid powder is used as a precursor for growth of the tungsten sulfide film, the borazane is used as a precursor for doping elements of boron (B) and nitrogen (N), and the B and N co-doped large-area continuous tungsten disulfide film is synthesized by a Chemical Vapor Deposition (CVD) method, so that the method is beneficial to research on co-doping of tungsten sulfide and improvement of electrical properties, catalytic properties and antibacterial properties of tungsten sulfide.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a preparation method of a doped two-dimensional tungsten disulfide film.
Background
Tungsten disulfide (WS)2) The forbidden band width is in the visible light range, and the method can be used in the fields of luminescent devices, photoconductive detectors, catalysts and the like. The intrinsic tungsten sulfide including powder and film has been studied more extensively and deeply, and the intrinsic tungsten sulfide is madeThe device has more comprehensive understanding on the performance. Doping is a common means for changing the performance of semiconductor materials, and the carrier concentration, forbidden bandwidth, conductivity type, catalytic capability and the like of the materials can be changed through doping. The doping of tungsten disulfide has also been reported in a large number, and most of the doping is single element doping, such as transition metal elements of iron, cobalt and manganese, rare earth elements of ytterbium, erbium and hafnium, and non-metal elements of nitrogen and oxygen. Codoping has also been reported less, and boron, carbon, nitrogen, oxide, manganese halide, aluminum-oxygen, fluorine-nitrogen, nitrogen-phosphorus codoping of titanium-lead, tellurium-molybdenum, manganese has been studied. Nitrogen doping can increase tungsten sulfide active catalytic sites, enhance bactericidal performance, and improve electrical performance. Increasing the doping amount is considered for doping, and co-doping is one of effective methods for increasing the doping amount.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of a boron and nitrogen co-doped tungsten disulfide film;
a preparation method of a boron and nitrogen codoped tungsten disulfide film specifically comprises the following steps:
step (1) taking WS21-5 g of solid powder is put into a quartz boat, and then the quartz boat is put into a quartz tube in an electric furnace; the quartz boat is placed in the middle of the quartz tube;
cleaning the substrate by deionized water, drying the substrate by nitrogen, and placing the substrate in the downstream direction of carrier gas airflow at a horizontal distance of 20cm from a quartz boat;
step (3), 0.5-2g of borazane is filled into a quartz test tube, and the quartz test tube is communicated with an air inlet pipeline at the upstream end of carrier gas of a CVD quartz tube;
starting a mechanical pump for vacuumizing, inputting a carrier gas argon-hydrogen mixed gas into the quartz tube at the same time, wherein the volume content of hydrogen is 5%, the carrier gas flow is 100sccm, after pumping for 2-4 min, closing a valve between the quartz tube and the mechanical pump, and stopping pumping the carrier gas; when the pressure in the quartz tube rises to 0.4-0.7 atmospheric pressure, closing the carrier gas flow and stopping inputting the carrier gas into the quartz tube;
step (5), heating the quartz tube to 900-1200 ℃, wherein the heating rate is 20-30 ℃/min; keeping the temperature after the temperature is increased to 900-1200 ℃, wherein the heat preservation time is 30-90 min;
step (6), heating the quartz test tube to 80-100 ℃ through an oil bath while the quartz tube is heated to the heat preservation temperature, and then preserving the heat of the quartz test tube for 30-90 min;
and (7) stopping heating the quartz tube and the quartz test tube, closing the boron ammonia alkane steam, opening the tube furnace, rapidly cooling the quartz tube to room temperature at a cooling rate of 50-100 ℃/min, taking out the substrate, and obtaining the nitrogen and boron co-doped WS on the substrate2A film.
Preferably, WS2Is WS2The solid powder was replaced with tungsten oxide.
Preferably, the substrate is a silicon wafer (SiO) with an oxide layer grown on the surface2Si), sapphire or porous carbon, silicon carbide materials.
Preferably, the quartz tube in the step (1) is replaced by a corundum tube, and the quartz boat is replaced by a corundum boat.
Preferably, the inner diameter of the quartz tube is 1 inch.
Preferably, the size of the substrate is 2.5-3.5 cm multiplied by 1.5-2.0 cm.
According to the invention, while the tungsten sulfide thin film grows, the dopant is introduced through a gas phase method, so that the growth of the high-quality tungsten sulfide doped thin film is realized;
the method can also be used for synthesizing nitrogen and boron doped molybdenum sulfide thin film materials.
Compared with the existing doping method, the invention adopts tungsten sulfide (WS)2) The solid powder is used as a precursor for growing the tungsten sulfide film, the borazane is used as a precursor for doping elements of boron (B) and nitrogen (N), and the B and N co-doped large-area continuous tungsten disulfide film is synthesized by a Chemical Vapor Deposition (CVD) method, so that the method is beneficial to improving the electrical property, the catalytic property and the antibacterial property of the tungsten sulfide.
Drawings
FIG. 1 is a schematic view of an apparatus for practicing the present invention.
Detailed Description
The first embodiment is as follows: as shown in fig. 1, a method for preparing a boron and nitrogen co-doped tungsten disulfide thin film specifically includes the following steps:
step (1) taking WS21g of solid powder is put into a quartz boat 3, the inner diameter of the quartz tube is 1 inch, and then the quartz boat is put into the quartz tube in the electric furnace 1; the quartz boat is placed in the middle of the quartz tube;
step (2), cleaning the substrate 2 by using deionized water, drying the substrate by using nitrogen, and placing the substrate in the downstream direction of carrier gas airflow at a horizontal distance of 20cm from a quartz boat; the size of the substrate is 2.5cm multiplied by 1.5cm, and the substrate is a silicon wafer with an oxide layer growing on the surface;
step (3), 0.5g of borazane 4 is filled into a quartz test tube, and the quartz test tube is communicated with an air inlet pipeline at the upstream end of carrier gas of a CVD quartz tube;
starting a mechanical pump to pump vacuum, inputting a carrier gas argon-hydrogen mixed gas into the quartz tube, wherein the volume content of hydrogen is 5%, the carrier gas flow is 100sccm, after pumping for 2min, closing a valve between the quartz tube and the mechanical pump, and stopping pumping the carrier gas; when the air pressure in the quartz tube rises to 0.4 atmospheric pressure, closing the carrier gas flow and stopping inputting the carrier gas into the quartz tube;
step (5), heating the quartz tube to 900 ℃, wherein the heating rate is 20 ℃/min; keeping the temperature for 30min after the temperature is increased to 900 ℃;
step (6), heating the quartz test tube to 80 ℃ through an oil bath 5 while the quartz tube is heated to the heat preservation temperature, and then preserving the heat of the quartz test tube for 30 min;
and (7) stopping heating the quartz tube and the quartz test tube, closing the boron ammonia alkane steam, opening the tube furnace, rapidly cooling the quartz tube to room temperature at a cooling rate of 50 ℃/min, taking out the substrate, and obtaining the nitrogen and boron co-doped WS on the substrate2A film.
Example two: a preparation method of a boron and nitrogen codoped tungsten disulfide film specifically comprises the following steps:
step (1) taking WS23g of solid powder, and placing the powder into a quartz boat, wherein the inner diameter of the quartz tube is 1 inchThen putting the quartz boat into a quartz tube in an electric furnace; the quartz boat is placed in the middle of the quartz tube;
cleaning the substrate by deionized water, drying the substrate by nitrogen, and placing the substrate in the downstream direction of carrier gas airflow at a horizontal distance of 20cm from a quartz boat; the size of the substrate is 3.5cm multiplied by 12.0cm, and the substrate is a surface growth silicon carbide material;
step (3), loading 1g of borazane into a quartz test tube, wherein the quartz test tube is communicated with a gas inlet pipeline at the upstream end of carrier gas of a CVD quartz tube;
starting a mechanical pump to pump vacuum, inputting a carrier gas argon-hydrogen mixed gas into the quartz tube, wherein the volume content of hydrogen is 5%, the carrier gas flow is 100sccm, after pumping for 3min, closing a valve between the quartz tube and the mechanical pump, and stopping pumping the carrier gas; when the air pressure in the quartz tube rises to 0.5 atmospheric pressure, closing the carrier gas flow and stopping inputting the carrier gas into the quartz tube;
step (5), heating the quartz tube to 1000 ℃, wherein the heating rate is 25 ℃/min; keeping the temperature for 60min after the temperature is raised to 1000 ℃;
step (6), heating the quartz test tube to 90 ℃ through an oil bath while the quartz tube is heated to the heat preservation temperature, and then preserving the heat of the quartz test tube for 70 min;
and (7) stopping heating the quartz tube and the quartz test tube, closing the boron ammonia alkane steam, opening the tube furnace, rapidly cooling the quartz tube to room temperature at a cooling rate of 60 ℃/min, taking out the substrate, and obtaining the nitrogen and boron co-doped WS on the substrate2A film.
Example three: a preparation method of a boron and nitrogen codoped tungsten disulfide film specifically comprises the following steps:
step (1) taking WS25g of solid powder is put into a quartz boat, the inner diameter of the quartz tube is 1 inch, and then the quartz boat is put into the quartz tube in the electric furnace; the quartz boat is placed in the middle of the quartz tube;
cleaning the substrate by deionized water, drying the substrate by nitrogen, and placing the substrate in the downstream direction of carrier gas airflow at a horizontal distance of 20cm from a quartz boat; the size of the substrate is 3.5cm multiplied by 1.5 cm;
step (3), 2g of borazane is filled into a quartz test tube, and the quartz test tube is communicated with a gas inlet pipeline at the upstream end of carrier gas of a CVD quartz tube;
starting a mechanical pump to pump vacuum, inputting a carrier gas argon-hydrogen mixed gas into the quartz tube, wherein the volume content of hydrogen is 5%, the carrier gas flow is 100sccm, closing a valve between the quartz tube and the mechanical pump after pumping for 4min, and stopping pumping the carrier gas; when the air pressure in the quartz tube rises to 0.7 atmospheric pressure, closing the carrier gas flow and stopping inputting the carrier gas into the quartz tube;
step (5), heating the quartz tube to 1200 ℃, wherein the heating rate is 30 ℃/min; keeping the temperature for 90min after the temperature is increased to 1200 ℃;
step (6), heating the quartz test tube to 100 ℃ through an oil bath while the quartz tube is heated to the heat preservation temperature, and then preserving the heat of the quartz test tube for 90 min;
and (7) stopping heating the quartz tube and the quartz test tube, closing the boron ammonia alkane steam, opening the tube furnace, rapidly cooling the quartz tube to room temperature at a cooling rate of 100 ℃/min, taking out the substrate, and obtaining the nitrogen and boron co-doped WS on the substrate2A film.
Claims (6)
1. A preparation method of a boron and nitrogen codoped tungsten disulfide film is characterized by comprising the following steps:
step (1) taking WS21-5 g of solid powder is put into a quartz boat, and then the quartz boat is put into a quartz tube in an electric furnace; the quartz boat is placed in the middle of the quartz tube;
cleaning the substrate by deionized water, drying the substrate by nitrogen, and placing the substrate in the downstream direction of carrier gas airflow at a horizontal distance of 20cm from a quartz boat;
step (3), 0.5-2g of borazane is filled into a quartz test tube, and the quartz test tube is communicated with an air inlet pipeline at the upstream end of carrier gas of the quartz tube;
starting a mechanical pump for vacuumizing, inputting a carrier gas argon-hydrogen mixed gas into the quartz tube at the same time, wherein the volume content of hydrogen is 5%, the carrier gas flow is 100sccm, after pumping for 2-4 min, closing a valve between the quartz tube and the mechanical pump, and stopping pumping the carrier gas; when the pressure in the quartz tube rises to 0.4-0.7 atmospheric pressure, closing the carrier gas flow and stopping inputting the carrier gas into the quartz tube;
step (5), heating the quartz tube to 900-1200 ℃, wherein the heating rate is 20-30 ℃/min; keeping the temperature after the temperature is increased to 900-1200 ℃, wherein the heat preservation time is 30-90 min;
step (6), heating the quartz test tube to 80-100 ℃ through an oil bath while the quartz tube is heated to the heat preservation temperature, and then preserving the heat of the quartz test tube for 30-90 min;
and (7) stopping heating the quartz tube and the quartz test tube, closing the boron ammonia alkane steam, opening the tube furnace, rapidly cooling the quartz tube to room temperature at a cooling rate of 50-100 ℃/min, taking out the substrate, and obtaining the nitrogen and boron co-doped WS on the substrate2A film.
2. The method for preparing the boron and nitrogen codoped tungsten disulfide film according to claim 1, wherein the method comprises the following steps: the WS2Is WS2The solid powder was replaced with tungsten oxide.
3. The method for preparing the boron and nitrogen codoped tungsten disulfide film according to claim 1, wherein the method comprises the following steps: the substrate is a silicon wafer with an oxide layer growing on the surface, sapphire or porous carbon or silicon carbide material.
4. The method for preparing the boron and nitrogen codoped tungsten disulfide film according to claim 1, wherein the method comprises the following steps: replacing the quartz tube with a corundum tube and replacing the quartz boat with a corundum boat in the step (1).
5. The method for preparing the boron and nitrogen codoped tungsten disulfide film according to claim 1, wherein the method comprises the following steps: the inner diameter of the quartz tube is 1 inch.
6. The method for preparing the boron and nitrogen codoped tungsten disulfide film according to claim 1, wherein the method comprises the following steps: the size of the substrate is 2.5-3.5 cm multiplied by 1.5-2.0 cm.
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