CN102428028A - Support cone for silicon seed bars - Google Patents
Support cone for silicon seed bars Download PDFInfo
- Publication number
- CN102428028A CN102428028A CN2010800217668A CN201080021766A CN102428028A CN 102428028 A CN102428028 A CN 102428028A CN 2010800217668 A CN2010800217668 A CN 2010800217668A CN 201080021766 A CN201080021766 A CN 201080021766A CN 102428028 A CN102428028 A CN 102428028A
- Authority
- CN
- China
- Prior art keywords
- tapered cup
- holding
- matrix
- clamping element
- electric current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention is related to a support cone for silicon seed bars in reactors for deposition of polysilicon. It is an object of the invention to realize a support cone for silicon seed bars which guarantees a good contact to the inserted silicon seed bars and which reduces the heat dissipation clearly. This is obtained thereby that the support cone consists of a rotation-symmetric base body (2) with a clamp element (3) insertable in the support cone onto its highest position to incorporate the silicon seed bar (1), whereby the base body (2) is recessed similar to a lid of a pan to incorporate a connect belt (4) and whereby the rim (5) of it is insertable into a current lead through in the base of the reactor, whereby the components silicon seed bar (1), clamp element (3), base body (2) and fastening element of the current lead through as well as connect bolt (4) are pluggable into one another form-locking and force-fit.
Description
Technical field
The present invention relates to a kind of Tapered Cup of holding that is used for the silicon growth rod at the reactor drum that is used for gathering polysilicon.
Background technology
Polysilicon needs big consumption for various applicable cases, for example for the manufacturing of solar cell.Because the polysilicon with the purity that needs at occurring in nature can not use or enough not use, so must utilize suitable method to make polysilicon.
For example developed so-called siemens method in order to make polysilicon, wherein, a large amount of silicon growth rods that also is nominally thin bar has been put in the reactor drum, and accumulated on the silicon growth rod with the CVD method polysilicon there.In addition, precondition for this reason is enough temperature of the thin rod of silicon, and this temperature must be near the melt temperature of silicon.In order to realize this point, be heated to the silicon growth rod temperature required by means of resistive heating device.
The silicon growth rod is adjacent to be distributed in the suitable keeper in the reactor drum with paired mode respectively, wherein, the thin rod of silicon is electrically connected to each other on last free end for this reason.Usually will hold the keeper that Tapered Cup be used as silicon growth rod by what graphite was processed, these hold Tapered Cup or single part formula or multi-part formula ground is implemented.Hold the reliable mechanical mounting block that electrically contacts but also serve as the silicon growth rod that Tapered Cup not only is used for the silicon growth rod, the silicon growth rod is significantly increasing aspect its weight through the layer growth during the coating process.In addition, should as far as possible easily from hold Tapered Cup, take out the silicon rod of accomplishing.
For through under 1100 ℃ of situation, polysilicon being deposited, used high purity trichlorosilane (SiHCl at the chemical vapor deposition on the thin rod of silicon (coming nominal with Chemical Vapor Deposition (CVD) usually)
3), wherein, according to equation
4SiHCl
3→Si+3SiCl
4+2H
2
Disproportionation reaction takes place.Accumulate on the silicon growth rod at this at this silicon of freely growing up.
Reactor drum is made up of the quartz bell cover of the outer metal bell jar of being with protection usually, and it draws part (Stromdurchf ü hrung) through water cooling together with base plate and necessary electric current feedback.
In the simplest embodiment, just in the embodiment of single part formula, the silicon growth rod is inserted in the opening that holds Tapered Cup.It is obvious that, and the profile that only ought hold opening and the silicon growth that is inserted into rod in the Tapered Cup in this case just can guarantee enough good electrical contact as far as possible accurately at once.
In the embodiment of multi-part formula, hold Tapered Cup and form by the matrix and the jaw that can be inserted in the matrix, with jaw by means of set nut with respect to the silicon growth rod tensioning of being inserted.
Important part is in holding Tapered Cup, guarantees to draw part, hold the good electrical contact as far as possible between Tapered Cup and the silicon growth rod passing reactor wall to the electric current feedback of holding Tapered Cup.The heat that this external electric current feedback draws part, hold the interface position of Tapered Cup and silicon growth rod distributes must be the least possible.The document of quoting does not subsequently satisfy this precondition.
Specify siemens's method that quote the front relating to the CVD method that is used for deposit spathic silicon and DE 600 32 813T2 of CVD equipment, utilized this method and apparatus depositing silicon on silicone tube.These silicone tubes remain in the reactor apparatus through the keeper of being processed by graphite.
Similarly the graphite keeper is also learnt by US 3 200 009A.
Learn a kind of being used for by DE 1 205 950B by being bar-shaped, gas by the semiconductor material of identical cell structure on the made supporting body keeper in the equipment of deposited semiconductor material and the method for manufacture of this keeper mutually.Here also used the graphite keeper that is used for the thin rod of silicon, these graphite keepers are conical at its end face and perhaps construct taperedly.This keeper also can be configured to anchor clamps, and wherein, these anchor clamps promptly, separate one and half parts dividing on local mode ground in the end through boring as follows through the otch perpendicular to excellent axis.Two and half parts keep together through graphite annulus.
Summary of the invention
Present task of the present invention is to provide a kind of Tapered Cup of holding that is used for the silicon growth rod, wherein, and the excellent contact of the silicon growth rod that has guaranteed to be inserted and realized that the heat of obvious minimizing distributes.
Be resolved as follows through a kind of Tapered Cup of holding that is used for the silicon growth rod at the reactor drum that is used for gathering polysilicon based on task of the present invention; Promptly; This holds Tapered Cup and is made up of rotational symmetric matrix; This matrix has the clamping element that can be medially be inserted into single-piece in the matrix in highest position, be used to hold the silicon growth rod, and wherein, matrix is pot cover shape ground and leaves recess for holding attachment pegs; And wherein; The electric current feedback that the edge of matrix can be inserted in the reactor bottom is drawn in the part, wherein, single-piece silicon growth rod, clamping element, matrix and electric current present the receiving member that draws part and attachment pegs can sealed with shape (formschl ü ssig) and the mode of force closure (kraftschl ü ssig) peg graft each other.
Structure with minimum especially little quality of holding Tapered Cup that maybe wall thickness with distribute via the related heat that causes drawing the remarkable minimizing of part via the electric current feedback of the center heat input of clamping clip, and then when reactor drum heats, cause to association the heat demand that reduces with it.
In addition, can be inserted in the tapered portion and realize clamping reliably simply again of the silicon growth rod that inserted, and realize the simple taking-up after the coating through the rod of coating with the clamping clip that particular form is constructed.Can realize being matched with excellent the adjusting of silicon growth through the interior profile that changes clamping clip, and need not to carry out the change of substruction nearly all geometrical dimension.
Other advantages of the present invention are that said structure can very elongated and easily be implemented.
In order to hold clamping element, matrix is furnished with middle blind hole.
In improvement project of the present invention, with the rotation of the clamping element of single-piece symmetrically, be similar to jaw ground structure, and have and be used for that silicon growth is excellent, accommodation hole that run through, that extend longitudinally.
In order this to be realized as far as possible simply clamping element is provided with along clamping element breach that extend, that do not run through from two end faces, these breaches are alternately from an end face or from another end face.
In clamping element, be provided with each two groups three with 120 ° of breaches that stagger for this reason, wherein, stagger with 60 ° with respect to breach from the other end from the breach of an end face.
In other designs of the present invention, clamping element is provided with flange at an end, wherein, extends through this flange from the breach of the end face on the flange side of clamping element.Clamping element is received the highest degree of depth that is equivalent to blind hole of part on the flange.
In order between silicon growth rod that is inserted and clamping element and between clamping element and primary element, to realize sufficient force closure, blind hole is tapered on the degree of depth taperedly.
For this reason, blind hole should have 0.5 °-30 ° cone angle, is convenient on the one hand the clamping effect that reaches enough, and having guaranteed on the other hand can be by removing clamping element in the primary element.
Be provided with in addition, the shell surface of clamping element is tapered with identical cone angle as blind hole towards opposed end face from flange.
In other designs of the present invention, the edge of primary element that is the pot cover shape is tapered to same degree as the corresponding counterpart in the part is drawn in electric current feedback taperedly.
The cone angle that the counterpart in the part is drawn in edge and electric current feedback should be 4 °-5 °.
In special improved procedure of the present invention,, electric current feedback is furnished with the separative element that can conduct electricity between drawing receiving member and the matrix of part at least, and this separative element is configured to spread hinder device and be made from silver simultaneously.
In order to realize complete as far as possible and large-area the separation that separative element draws the negative shape of the attachment pegs of part corresponding to the negative shape of the interior profile of primary element and on downside corresponding to the electric current feedback.
For the taking-up that makes the silicon rod that is attached growth becomes easily, advantageously, at least at primary element be attached between the silicon rod of growth and be furnished with the separation utensil.
This separation utensil can be by CFC (carbon-fiber reinforced carbon (Carbon Fiber reinforced Carbon)) or other made conductive foil or the pad of graphite foil, and also can extend the bottom until blind hole.
Description of drawings
Further explain the present invention below in conjunction with embodiment.Shown in the accompanying drawing:
Fig. 1 illustrates according to the side-view that holds Tapered Cup of the present invention, and this holds Tapered Cup and has clamping element and the silicon growth rod that has inserted;
Fig. 2 illustrates the sectional view that holds Tapered Cup according to Fig. 1;
Fig. 3 illustrates according to the mode of texturing of holding Tapered Cup of the present invention, and this holds Tapered Cup and has clamping element and the silicon growth rod that has inserted;
Fig. 4 illustrates the sectional view that holds Tapered Cup according to Fig. 3;
Fig. 5 illustrates the side-view that holds Tapered Cup according to Fig. 1;
Fig. 6 illustrates the sectional view that holds Tapered Cup according to Fig. 5;
Fig. 7 illustrates the stereographic map that holds Tapered Cup according to Fig. 5;
Fig. 8 illustrates the side-view that holds Tapered Cup according to Fig. 3;
Fig. 9 illustrates the sectional view that holds Tapered Cup according to Fig. 8;
Figure 10 illustrates the stereographic map that holds Tapered Cup according to Fig. 8;
Figure 11 illustrates and is used to be placed into the separative element on the Tapered Cup that holds according to Fig. 3, Fig. 4;
Figure 12 illustrates the side-view according to the separative element of Figure 11;
Figure 13 illustrates the stereographic map according to the separative element of Figure 11; And
Figure 14 a, Figure 14 b, Figure 14 c, 14d illustrate the details of clamping element.
Embodiment
The foundation Tapered Cup of holding of the present invention that is used for silicon growth rod 1 is made up of rotational symmetric matrix 2, and this matrix 2 has and can medially be inserted into the clamping element 3 single-piece, that be used to hold silicon growth rod 1 (Fig. 1, Fig. 2, Fig. 5, Fig. 6, Fig. 7) in the matrix 2 in highest position.Matrix 2 draws the attachment pegs 4 of part and leaves recess (Fig. 6) with being the pot cover shape in order to hold electric current feedback.The electric current feedback that the edge 5 of matrix 2 can be inserted in the bottom of unshowned reactor drum is simultaneously drawn in the part; Wherein, each parts: silicon growth rod 1, clamping element 3, matrix 2 and electric current feedback are drawn the receiving member and the attachment pegs 4 of part and can mode sealed with shape and force closure be pegged graft interlaced with each otherly.
Fig. 3, Fig. 4 and Fig. 8, Fig. 9, Figure 10 illustrate the mode of texturing of holding Tapered Cup, and wherein, matrix 2 is not to extend upward to end taperedly, but are flatly constructed.
In order to hold clamping element 3, matrix 2 is provided with middle blind hole 6.Blind hole 6 should have 0.5 °-30 ° cone angle, is convenient on the one hand the clamping effect that reaches enough, has guaranteed on the other hand from matrix 2, to remove clamping element 3 once more, and these are clearly (Fig. 2, Fig. 4) by subsequently explaination.
Clamping element 3 is with rotational symmetric, and the mode that is similar to jaw is constructed, and has and be used for the silicon growth rod accommodation hole that extends longitudinally 71, that run through (Figure 14 a, Figure 14 b, Figure 14 c, Figure 14 d).
In order to realize simple clamping, clamping element 3 is provided with from two end faces 8,9s along stepping up element breach 10 that extend, that do not run through, and these breaches 10 are alternately from an end face 8,9 or another end face 8,9s.
In clamping element 3, be provided with each two groups three with 120 ° of breaches that stagger each other 10, wherein, from the breach 10 of end face 8s with respect to from the breach 10 of 9s, other end with 60 ° stagger (Fig. 6 a, Fig. 6 b, Fig. 6 c).
Be provided with flange 11 in addition clamping element 3 one ends, wherein, extend through flange 11 from the breach 10 of end face 8s, ground on the flange side of clamping element 3.Clamping element 3 be contiguous to the degree of depth that part maximum on the flange 11 equals blind hole 6.
For the sufficient force closure of realization between silicon growth rod 1 that is inserted and clamping element 3 and between clamping element 3 and matrix 2; The shell surface of clamping element 3 is being tapered with identical cone angle as blind hole 6 after the flange 11 taperedly, thereby forms friction pair.
Because must remaining on the electric current feedback on the one hand reliably, draws in the corresponding counterpart of part primary element 2; Yet must be able to easily take out once more on the other hand, thus be the pot cover shape matrix 2 edge 5 as electric current feedback draw tapered ground, corresponding counterpart same degree ground in the part, (Fig. 2, Fig. 4, Fig. 6, Fig. 9) is tapered with forming another friction pair.
The cone angle that the counterpart in the part is drawn in the cone angle at edge 5 and electric current feedback should be 4 °-5 °.
Other mounting condition also can be adjusted without a doubt in this edge 5.Thereby for example internal surface also can be provided with screw thread, perhaps can be configured to holding of bolt or like.
For fear of the various diffusion processes of the obvious degradation of the silicon rod that growth during cladding process, occurs causing being attached, draw in the electric current feedback between receiving member and the matrix 2 of part and be furnished with the separative element 12 that can conduct electricity.Suitable for this reason is that separative element 12 is made from silver (Fig. 1, Fig. 2, Fig. 3, Fig. 4).
In order to realize complete as far as possible and large-area the separation, separative element 12 have primary element interior profile negative shape and on downside, have the electric current feedback and draw the negative shape of the attachment pegs 4 of part.
In addition for the silicon rod that is attached growth can be taken out easily, at least at matrix 2 be attached and be furnished with other between the silicon rod of growth and separate utensil 13 (Figure 11, Figure 12, Figure 13).
This separation utensil 13 can be conductive foil or the pad of being processed by CFC (carbon-fiber reinforced carbon) or other suitable graphite foil, and also can extend the bottom until blind hole 6.
Arrive heat input according to the structural nexus with especially little quality of holding Tapered Cup of minimum possibility wall thickness of the present invention via the center of clamping clip 3; The heat that causes drawing part via the electric current feedback distributes remarkable minimizing, and then is inconjunction with the heat demand that causes obvious minimizing when reactor drum heats.
In addition, can be inserted in the Tapered Cup and guarantee simply to clamp the silicon growth rod 1 that is inserted again reliably with the clamping clip 3 that particular form is constructed, and the simple taking-up that coating after, has guaranteed silicon growth excellent 1.Can realize the adjusting of the silicon growth rod 1 of nearly all geometrical dimension through the interior profile that changes clamping clip 3, and need not to carry out the change of matrix 2, this causes significant cost savings.
Reference numerals list
1 silicon growth rod
2 matrixes
3 clamping elements
4 attachment pegs
5 edges
6 blind holes
7 accommodation holes
8 end faces
9 end faces
10 breaches
11 flanges
12 separative elements
13 separate utensil
Claims (17)
1. the Tapered Cup of holding that is used for the silicon growth rod at the reactor drum that is used for gathering polysilicon; The said Tapered Cup of holding is processed by graphite; It is characterized in that the said Tapered Cup of holding is made up of rotational symmetric matrix (2), said matrix has and can be medially be inserted into being used in the said matrix in highest position and holds the single-piece clamping element (3) of said silicon growth rod (1); Wherein, Said matrix (2) is pot cover shape ground and leaves recess for holding attachment pegs (4), and wherein, and the electric current feedback that the edge of said matrix (5) can be inserted in the bottom of said reactor drum is drawn in the part; Wherein, each parts: silicon growth rod (1), clamping element (3), matrix (2) and the feedback of said electric current are drawn the receiving member and the attachment pegs (4) of part and can sealedly with shape be pegged graft each other with mode force closure.
2. the Tapered Cup of holding according to claim 1 is characterized in that, said matrix (2) is provided with middle blind hole (7) to hold said clamping element (3).
3. the Tapered Cup of holding according to claim 1 is characterized in that, said single-piece clamping element (3) rotates symmetrically, is similar to jaw ground structure, and has and be used for the accommodation hole (7) that said silicon growth rod is (1), that run through, extend longitudinally.
4. according to the described Tapered Cup of holding of claim 1 to 3; It is characterized in that; Said clamping element (3) is provided with along said clamping element breach (10) that extend, that do not run through from two end faces, and said breach is alternately from an end face or another end face (8; 9) set out.
5. the Tapered Cup of holding according to claim 4; It is characterized in that; In said clamping element (3), be provided with each two groups three with 120 ° of said breaches (10) that stagger; Wherein, (the said breach (10) of 8)s is with respect to (the said breach (10) of 9)s staggers with 60 ° from the other end from an end face.
6. according to each described Tapered Cup of holding in the claim 1 to 5; It is characterized in that; Said clamping element (3) is provided with flange (11) at an end, and wherein, (the said breach (10) of 8)s extends through said flange (11) from the end face on the flange side of said clamping element (3); And wherein, said clamping element (3) receives part maximum on the said flange (11) corresponding to the degree of depth of said blind hole (6).
7. the Tapered Cup of holding according to claim 6 is characterized in that said blind hole (6) is tapered taperedly on the degree of depth.
8. the Tapered Cup of holding according to claim 7 is characterized in that, said blind hole (6) has 0.5 °-30 ° cone angle.
9. according to each described Tapered Cup of holding in the claim 1 to 8, it is characterized in that the shell surface of said clamping element (3) is tapered with identical cone angle towards opposed end face (9) from said flange (11) as said blind hole 6.
10. the Tapered Cup of holding according to claim 9 is characterized in that, the said edge (5) that is the said matrix of pot cover shape is tapered on same degree ground as the counterpart in the part is drawn in said electric current feedback taperedly.
11. the Tapered Cup of holding according to claim 10 is characterized in that, the cone angle that the said counterpart in the part is drawn in the cone angle of said edge (5) and the feedback of said electric current is 4 °-5 °.
12. according to each described Tapered Cup of holding in the claim 1 to 11, it is characterized in that, between receiving member and the said matrix (2) of part drawn in the feedback of said electric current, be furnished with the separative element (11) that can conduct electricity at least.
13. the Tapered Cup of holding according to claim 12 is characterized in that, said separative element (11) is the diffusion hinder device simultaneously and is made from silver.
14. the Tapered Cup of holding according to claim 13 is characterized in that, said separative element (11) draws the negative shape of the said attachment pegs (4) of part corresponding to the negative shape of the interior profile of said matrix (2) and on downside corresponding to said electric current feedback.
15. according to each described Tapered Cup of holding in the claim 1 to 14, it is characterized in that, at least at said matrix (2) be attached to be furnished with between the silicon rod of growth and separate utensil (13).
16. the Tapered Cup of holding according to claim 15 is characterized in that, said separation utensil (13) is conductive foil or pad, and is processed by CFC (carbon-fiber reinforced carbon) or other graphite foil.
17. the Tapered Cup of holding according to claim 16 is characterized in that, said separation utensil (13) extends the bottom until said blind hole (6).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009021825.4 | 2009-05-18 | ||
| DE200910021825 DE102009021825B3 (en) | 2009-05-18 | 2009-05-18 | Pick-up cone for silicon seed rods |
| PCT/EP2010/053443 WO2010133386A1 (en) | 2009-05-18 | 2010-03-17 | Holding cone for silicon growth rods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102428028A true CN102428028A (en) | 2012-04-25 |
| CN102428028B CN102428028B (en) | 2014-04-23 |
Family
ID=42199505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080021766.8A Expired - Fee Related CN102428028B (en) | 2009-05-18 | 2010-03-17 | Support cone for silicon seed bars |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN102428028B (en) |
| DE (1) | DE102009021825B3 (en) |
| TW (1) | TWI450860B (en) |
| UA (1) | UA99570C2 (en) |
| WO (1) | WO2010133386A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107108235A (en) * | 2014-11-04 | 2017-08-29 | 株式会社德山 | The manufacture method of core wire holder and silicon |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010003069A1 (en) * | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | Cone-shaped graphite electrode with raised edge |
| DE102010003068A1 (en) | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | Process for the preparation of crack-free polycrystalline silicon rods |
| US10494714B2 (en) * | 2011-01-03 | 2019-12-03 | Oci Company Ltd. | Chuck for chemical vapor deposition systems and related methods therefor |
| JP5666983B2 (en) * | 2011-05-09 | 2015-02-12 | 信越化学工業株式会社 | Silicon core wire holder and method for producing polycrystalline silicon |
| JP5507493B2 (en) * | 2011-05-09 | 2014-05-28 | 信越化学工業株式会社 | Silicon core wire holder and method for producing polycrystalline silicon |
| DE102011084372A1 (en) | 2011-10-12 | 2012-02-09 | Wacker Chemie Ag | Device for depositing polycrystalline silicon on thin rods, comprises an electrode for a power supply of thin rods, a quartz element and/or a graphite element present on the electrode and/or a mold body made of silicon |
| DE202013104065U1 (en) | 2013-09-06 | 2013-09-30 | Pryvatne Aktsionerne Tovarystvo "Zavod Napivprovidnykiv" | Holder for fixing seed rods in a growth reactor for polycrystalline silicon |
| KR101590607B1 (en) * | 2013-11-20 | 2016-02-01 | 한화케미칼 주식회사 | Apparatus for manufacturing polysilicon |
| CN112203980B (en) * | 2018-07-27 | 2023-04-21 | 瓦克化学股份公司 | Electrode for depositing polysilicon |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB983322A (en) * | 1961-06-16 | 1965-02-17 | Siemens Ag | Improvements in and relating to the deposition of semi-conducting material from the gas phase |
| US3200009A (en) * | 1956-06-25 | 1965-08-10 | Siemens Ag | Method of producing hyperpure silicon |
| DE2328303A1 (en) * | 1973-06-04 | 1975-01-02 | Siemens Ag | Vapour deposition resistance heated carrier electrode - comprises replaceable intermediate element |
| DE4041901A1 (en) * | 1989-12-26 | 1991-06-27 | Advanced Silicon Materials Inc | Pyrolytic prodn. of poly:silicon rod - on starter filament held by protectively coated graphite holder |
| CN101538042A (en) * | 2008-03-21 | 2009-09-23 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1155759B (en) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Device for obtaining the purest crystalline semiconductor material for electrotechnical purposes |
| CN1364203A (en) * | 2000-02-18 | 2002-08-14 | G.T.装备技术公司 | Method and apparatus for chemical vapor deposition of polysilicon |
-
2009
- 2009-05-18 DE DE200910021825 patent/DE102009021825B3/en not_active Expired - Fee Related
-
2010
- 2010-03-17 WO PCT/EP2010/053443 patent/WO2010133386A1/en active Application Filing
- 2010-03-17 CN CN201080021766.8A patent/CN102428028B/en not_active Expired - Fee Related
- 2010-03-17 UA UAA201112202A patent/UA99570C2/en unknown
- 2010-03-18 TW TW099107995A patent/TWI450860B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200009A (en) * | 1956-06-25 | 1965-08-10 | Siemens Ag | Method of producing hyperpure silicon |
| GB983322A (en) * | 1961-06-16 | 1965-02-17 | Siemens Ag | Improvements in and relating to the deposition of semi-conducting material from the gas phase |
| DE2328303A1 (en) * | 1973-06-04 | 1975-01-02 | Siemens Ag | Vapour deposition resistance heated carrier electrode - comprises replaceable intermediate element |
| DE4041901A1 (en) * | 1989-12-26 | 1991-06-27 | Advanced Silicon Materials Inc | Pyrolytic prodn. of poly:silicon rod - on starter filament held by protectively coated graphite holder |
| CN101538042A (en) * | 2008-03-21 | 2009-09-23 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107108235A (en) * | 2014-11-04 | 2017-08-29 | 株式会社德山 | The manufacture method of core wire holder and silicon |
| CN107108235B (en) * | 2014-11-04 | 2019-04-23 | 株式会社德山 | The manufacturing method of core wire holder and silicon |
| US10640385B2 (en) | 2014-11-04 | 2020-05-05 | Tokuyama Corporation | Core wire holder and method for producing silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102428028B (en) | 2014-04-23 |
| WO2010133386A1 (en) | 2010-11-25 |
| DE102009021825B3 (en) | 2010-08-05 |
| TW201041803A (en) | 2010-12-01 |
| UA99570C2 (en) | 2012-08-27 |
| TWI450860B (en) | 2014-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102428028B (en) | Support cone for silicon seed bars | |
| JP6004076B2 (en) | Polycrystalline silicon reactor | |
| US20070251447A1 (en) | Reactor and Method for Manufacturing Silicon | |
| US20080206970A1 (en) | Production Of Polycrystalline Silicon | |
| US20200147569A1 (en) | Device and method for the removal of polycrystalline silicon rods from a reactor | |
| JP2008156212A (en) | Apparatus for producing trichlorosilane | |
| EP2661516B1 (en) | Chuck for chemical vapor deposition systems and related methods therefor | |
| US20190032243A1 (en) | Heating unit and ingot growing device including same | |
| WO2012153465A1 (en) | Silicon core wire holder and method for manufacturing polycrystalline silicon | |
| CN104411864B (en) | Manufacturing equipment for deposition materials and it is used for bracket therein | |
| JP5865236B2 (en) | Polycrystalline silicon rod manufacturing apparatus and manufacturing method | |
| WO2014100401A1 (en) | Methods and systems for stabilizing filaments in a chemical vapor deposition reactor | |
| RU125200U1 (en) | MOUNTING BARS HOLDER FOR DEPOSITION OF POLYCRYSTALLINE SILICON | |
| CN203007467U (en) | Combined-type insulation unit for growing crystal | |
| WO2015103208A1 (en) | Carrier body for coupling to a socket disposed on an electrode within a reactor to grow polycrystalline silicon | |
| CN112299421A (en) | Polycrystalline silicon manufacturing apparatus | |
| US20180327271A1 (en) | Chemical vapor deposition method and apparatus | |
| WO2014011617A1 (en) | Apparatus for deposition including a socket |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140423 Termination date: 20170317 |