GB826575A - Improvements in or relating to methods of producing silicon of high purity - Google Patents

Improvements in or relating to methods of producing silicon of high purity

Info

Publication number
GB826575A
GB826575A GB3142556A GB3142556A GB826575A GB 826575 A GB826575 A GB 826575A GB 3142556 A GB3142556 A GB 3142556A GB 3142556 A GB3142556 A GB 3142556A GB 826575 A GB826575 A GB 826575A
Authority
GB
United Kingdom
Prior art keywords
decomposition
seed
silane
silicon
induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3142556A
Inventor
Henley Frank Sterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DEI9153A priority Critical patent/DE1042553B/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3142556A priority patent/GB826575A/en
Priority to DE19571417137 priority patent/DE1417137B2/en
Priority to DE19571417138 priority patent/DE1417138A1/en
Priority to CH5159057A priority patent/CH388918A/en
Publication of GB826575A publication Critical patent/GB826575A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lubricants (AREA)
  • Silicon Compounds (AREA)

Abstract

Silicon is produced from silane at a molar concentration less than "normal" by decomposition at a surface heated by induction directly by means of a concentrator coil supplied with high-frequency alternating current. The reduced concentration may be produced either by using substantially pure silane having a sub-atmospheric pressure or a mixture of substantially pure silane and an inert gas in which the silane has a sub-atmospheric pressure. Decomposition may take place at the surface of a silicon seed which is moved continuously from the decomposition zone so as to build up a body of silicon, in which case the seed may be preheated by radiation from a surrounding carbon tube itself heated by induction, or at a surface of molybdenum, in which case preheating is unnecessary. Examples are given specifying pressure, decomposition temperature, flow rate, growth rate, and percentage decomposition. A silicon crystal is grown in a vacuum sealed apparatus, part of which is shown, in which silane is injected <PICT:0826575/III/1> from a water-cooled pipe 31 on to a seed 43 situated on a plate 18 which may be continuously lowered as the decomposition proceeds. A water-cooled single-turn induction heating coil in the form of an annular copper box 26 having a radial slot 27 is situated just above the seed. A perforated carbon tube 21 surrounds plate 18 at the commencement of heating, and is lowered when the seed has been sufficiently heated by radiation. The growth of the crystal may be viewed through a glass or quartz tube 42, a band 44 of which is maintained clean by a wiper 15. The induction heating coil may alternatively have more than one turn.
GB3142556A 1953-09-25 1956-10-16 Improvements in or relating to methods of producing silicon of high purity Expired GB826575A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DEI9153A DE1042553B (en) 1953-09-25 1954-09-18 Process for the production of high purity silicon
GB3142556A GB826575A (en) 1956-10-16 1956-10-16 Improvements in or relating to methods of producing silicon of high purity
DE19571417137 DE1417137B2 (en) 1956-10-16 1957-09-21 Process for the production of high purity silicon
DE19571417138 DE1417138A1 (en) 1956-10-16 1957-10-10 Process and apparatus for producing high purity silicon
CH5159057A CH388918A (en) 1956-10-16 1957-10-15 Process and device for the production of high purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3142556A GB826575A (en) 1956-10-16 1956-10-16 Improvements in or relating to methods of producing silicon of high purity

Publications (1)

Publication Number Publication Date
GB826575A true GB826575A (en) 1960-01-13

Family

ID=10322909

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3142556A Expired GB826575A (en) 1953-09-25 1956-10-16 Improvements in or relating to methods of producing silicon of high purity

Country Status (3)

Country Link
CH (1) CH388918A (en)
DE (1) DE1417138A1 (en)
GB (1) GB826575A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8414863B2 (en) 2006-07-25 2013-04-09 Spawnt Private S.A.R.L. Hydrogen and energy generation by thermal conversion of silanes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2530607B1 (en) * 1982-07-26 1985-06-28 Rhone Poulenc Spec Chim PURE SILICON, DENSE POWDER AND PROCESS FOR PREPARING SAME

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8414863B2 (en) 2006-07-25 2013-04-09 Spawnt Private S.A.R.L. Hydrogen and energy generation by thermal conversion of silanes

Also Published As

Publication number Publication date
DE1417138B2 (en) 1970-09-10
CH388918A (en) 1965-03-15
DE1417138A1 (en) 1968-10-10

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