CN102539019A - Temperature measurement and calibration platform in space vacuum environment - Google Patents
Temperature measurement and calibration platform in space vacuum environment Download PDFInfo
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- CN102539019A CN102539019A CN2012100017696A CN201210001769A CN102539019A CN 102539019 A CN102539019 A CN 102539019A CN 2012100017696 A CN2012100017696 A CN 2012100017696A CN 201210001769 A CN201210001769 A CN 201210001769A CN 102539019 A CN102539019 A CN 102539019A
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- 238000009529 body temperature measurement Methods 0.000 title abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 31
- 238000000041 tunable diode laser absorption spectroscopy Methods 0.000 claims description 24
- 239000013307 optical fiber Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000002474 experimental method Methods 0.000 abstract description 8
- 238000000862 absorption spectrum Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 20
- 238000012360 testing method Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 238000005259 measurement Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910001006 Constantan Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 239000010727 cylinder oil Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002004 direct laser absorption spectroscopy Methods 0.000 description 1
- 239000008157 edible vegetable oil Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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Abstract
The invention relates to a temperature measurement and calibration platform in space vacuum environment. The temperature measurement and calibration platform is favorable for realizing the simultaneous calibration of contact type temperature measurement and non-contact type temperature measurement, so the temperature measurement and calibration platform is served for heat vacuum and heat balance experiments of spacecrafts such as satellites, spaceship and the like. The temperature measurement and calibration platform comprises a constant temperature bath, wherein a double-sub-cavity vacuum cavity, the double-sub-cavity vacuum cavity comprises a first vacuum cavity body and a second vacuum cavity body, the first vacuum cavity body and the second vacuum cavity body are connected with a vacuum pumping device through a three-way valve, standard temperature indicator sensors are respectively arranged on the outer wall of the first vacuum cavity body and on the outer wall of the second vacuum cavity body, the standard temperature indicator sensors are connected with a temperature secondary meter, a laser light path reflecting device is arranged in the vacuum cavity of the first vacuum cavity body for calibrating a non-contact type temperature measuring system based on the tunable diode laser absorption spectrum technology, and the vacuum cavity of the second vacuum cavity body is used for accommodating a temperature sensor for calibrating a contact type temperature measuring system adopting the temperature sensor.
Description
Technical field
The present invention relates to temperature survey and collimation technique under the vacuum environment, temperature survey and calibration platform under particularly a kind of space vacuum environment.Adopt said platform to help solving the thermometric problem of tracing to the source under the vacuum, calibrate when realizing contact temperature-measuring, thereby serve thermovacuum, the heat balance test of spacecrafts such as satellite, airship with contactless temperature-measuring.
Background technology
Be the correctness of verifying satellites thermal design, guarantee the reliability service of satellite, in the satellite development process, must carry out space thermal environment simulation experiment at space orbit.Ground simulation space thermal environment is to realize the pacing items of heat test, and in thermal vacuum test, the temperature of region of interest is to need one of core parameter of accurately measuring.Position by the temperature point place can be divided into spacecraft temperature and experimental facilities temperature two parts.The temperature survey at these positions at present is mainly T type copper-constantan thermocouple system, compares with RTD and thermistor.For guaranteeing thermometric accuracy and traceability, need regularly temperature measurement equipment to be carried out assay calibration.At present, temperature correction mainly is under normal pressure, to carry out.Development along with spationautics, vehicle technology; Vacuum environment experiment, particularly spacecraft thermal vacuum test becomes an extremely important test checking job, wherein under the vacuum environment measurement of some basic parameter especially the measurement of temperature become the crucial measuring technology of above-mentioned research.But up to the present; Traditional contact temperature-measuring technology is still adopted in the measurement of temperature basically in the spacecraft thermal vacuum test; Wherein Thermocouple Temperature Measure System is used very generally, but along with the technological development of space science, traditional thermocouple temperature measurement technology does not more and more satisfy the needs of spacecraft thermal vacuum test; Very little like the thermoelectrical potential signal; When the signal acquisition process unit is installed in outside the vacuum chamber, the thermocouple cable that connects between measurement point and signal processing unit is long again, and noise will have a negative impact to high-precision measurement. simultaneously because the temperature field more complicated of vacuum thermal test; The material of measuring circuit and technology just have the interference of additional heat electromotive force as can not get correct processing; Secondly, the quantity of the thermopair that needs in the spacecraft thermal vacuum test is very huge, not only bring difficulty to experiment, and the thermal loss of thermocouple wire also can reduce thermometric precision; Once more, from the angle analysis of physics, under high vacuum environment, adopt thermocouple measuring temperature to exist problems, as under the big situation of pressure, heat transfer type mainly contains three kinds of convection current, heat conduction and radiation.But at pressure near under the vacuum state; Convection current and heat conducting effect do not exist basically; What played intensification effect to workpiece, thermopair this moment mainly is radiation, the radiation reflection be molecule rotation (corresponding rotational temperature) and the thermal motion situation of vibrating (corresponding vibration temperature), and the calibration operation of thermopair generally is under normal pressure, to carry out; The temperature of therefore demarcating is the translation temperature that molecule is done thermal motion; Be the classical thermodynamics temperature, although the rotational temperature of molecule peace dynamic temperature degree keeps balance constantly, above-mentioned phenomenon shows: when the temperature that adopts the thermocouple measurement vacuum environment of demarcating under the normal pressure exists unpredictable problem.Therefore development advanced, accurately, the efficient temperature measuring technique has clear and definite, long-range, great civilian and military application background, can effective technological approaches and project data be provided for solving spacecraft thermal vacuum test.In the test of ground simulation space thermal environment, the position at the temperature point place of region of interest can be divided into spacecraft temperature and experimental facilities temperature two parts.The temperature survey at these positions at present mainly adopts temperature sensor to measure, and mainly uses T type copper-constantan thermocouple system, compares with RTD and thermistor.In the experiment of space thermal environment simulation, mainly adopt thermopair, RTD and thermistor to carry out temperature survey, its calibration, all realizations under normal pressure of tracing to the source as sensor.But under vacuum environment, temperature sensor material behavior and diabatic process all change, and the temperature field of thermal vacuum test distributes very complicated, so for guaranteeing thermometric accuracy, space temperature is measured and collimation technique remains further to be studied.TDLAS technology (Tunable Diode Laser Absorption Spectroscopy; The tunable diode laser absorption spectroscopy technology) be a kind of of spectroscopy remote sensing technology; Mainly being used for the temperature and the concentration of measurement gas, is the developing direction and the technological main flow of current trace gas, pollution gas online measuring technique.The TDLAS technology has advantages such as very strong selectivity, high sensitivity, high spectral resolution, system's versatility, can realize the high precision online measuring of gas temperature and concentration.Although the TDLAS technology has obtained great progress in gas temperature and measurement of concetration; Realized the high precision online measuring of gas temperature and concentration under the multiple environment; But regrettably; TDLAS technical research at present is primarily aimed at concrete practical applications, and the pressure limit of its research generally concentrates in 0.1kPa～1000kPa scope, seldom has researcher to attempt measuring the temperature and the concentration of gas under the high vacuum environment; Cause the reason of this respect to mainly contain following 2 points: the one, present TDLAS technology is primarily aimed at concrete practical applications, and practical applications generally seldom relates to utmost point low pressure conditions; The 2nd, the TDLAS technology is through analytical gas the absorbing state of laser to be obtained the temperature and the concentration of gas, but under vacuum environment, in the unit volume molecular number of gas seldom so that absorption signal is very weak and be unfavorable for experiment measuring.Along with the progress of experimental level, especially the optical resonator The Application of Technology made temperature and the concentration of measuring gas under the utmost point low pressure conditions become possibility but in recent years.
Summary of the invention
The present invention is directed to the defective or the deficiency that exist in the prior art, temperature survey and calibration platform under a kind of space vacuum environment are provided.Adopt said platform to help solving the thermometric problem of tracing to the source under the vacuum, calibrate when realizing contact temperature-measuring, thereby serve thermovacuum, the heat balance test of spacecrafts such as satellite, airship with contactless temperature-measuring.
Technical scheme of the present invention is following:
Temperature survey under the space vacuum environment and calibration platform; It is characterized in that, comprise calibration cell, be provided with the Shuangzi vacuum chamber in the said calibration cell; Said Shuangzi vacuum chamber comprises the 1st vacuum cavity and the 2nd vacuum cavity; Said the 1st vacuum cavity is connected vacuum withdraw device with the 2nd vacuum cavity through threeway, is provided with the standard temperature flowmeter sensor on the outer wall of said the 1st vacuum cavity and on the outer wall of said the 2nd vacuum cavity, and said standard temperature flowmeter sensor connects the temperature secondary instrument; Be provided with the laser optical path reflection unit in the vacuum chamber of said the 1st vacuum cavity, be used to calibrate contactless temperature-measuring system based on the tunable diode laser absorption spectroscopy technology; The vacuum chamber of said the 2nd vacuum cavity is used to hold temperature sensor, adopts the contact temperature-measuring system of said temperature sensor with calibration.
Said laser optical path reflection unit comprises mirror surface that is positioned at the 1st vacuum cavity cavity upper end and the mirror surface that is positioned at the 1st vacuum cavity cavity lower end, is provided with the optical fiber inlet of laser input and the optical fiber outlet of exporting through the laser after certain number of times reflection on said the 1st vacuum cavity cavity.
Said temperature sensor is installed on the inwall of the 2nd vacuum cavity, and said temperature sensor connects the temperature secondary instrument.
Said calibration cell adopts liquid nitrogen tank, alcohol trough, tank or oil groove.
Said vacuum withdraw device comprises mechanical pump, molecular pump, push-pull valve and solenoid valve, and said mechanical pump, molecular pump and push-pull valve are connected successively, and said push-pull valve connects said Shuangzi vacuum chamber through threeway, and said solenoid valve is parallel to said molecular pump and push-pull valve.
Said the 1st vacuum cavity and the 2nd vacuum cavity all adopt the red copper material.
Be provided with annular space on the outer wall of said the 1st vacuum cavity and on the outer wall of said the 2nd vacuum cavity; The bottom of said annular space is connected with said outer wall; The top of said annular space is communicated with atmosphere, and said standard temperature flowmeter sensor is positioned at said annular space.
Said optical fiber outlet connects photodetector, and said photodetector connects data acquisition processing device; Said optical fiber inlet connects laser instrument, and said laser instrument connects the laser controlling unit, and said laser controlling unit receives the mixed signal of signal generator and lock-in amplifier.
Technique effect of the present invention is following:
The present invention relates to temperature survey and collimation technique under the vacuum environment, can solve the thermometric problem of tracing to the source under the vacuum, calibration when realizing contact temperature-measuring and contactless temperature-measuring.The inventor is through carrying out temperature survey and the Research on Calibration Technology of temperature sensor technology under vacuum; Heat-transfer mechanism under the research vacuum environment; Set up the temperature correction platform under the cover vacuum environment, for space temperature Device for measuring, test, calibration provide safeguard.Based on tunable diode laser absorption spectroscopy technology (TDLAS), (air or specific gas are like CO to trace gas under the vacuum environment through the TDLAS technology simultaneously
2) temperature measure; Reliability and precision with checking traditional temperature sensor measuring technique; And develop on this basis a kind of brand-new, high-precision, based on the vacuum environment temperature measurement technology of TDLAS technology, two kinds of methods are formed relatively and complementary.The completion quasi-solution of this project temperature sensor big problem of measurement result difference under normal pressure and vacuum of determining is directly served thermovacuum, the heat balance test of spacecrafts such as satellite, airship.
In the test of ground simulation space thermal environment, the position at the temperature point place of region of interest can be divided into spacecraft temperature and experimental facilities temperature two parts.The temperature survey at these positions at present mainly adopts temperature sensor to measure, and mainly uses T type copper-constantan thermocouple system, compares with RTD and thermistor.TDLAS technology (Tunable Diode Laser Absorption Spectroscopy) has advantages such as very strong selectivity, high sensitivity, high spectral resolution, system's versatility; Can realize the high precision online measuring of gas temperature and concentration, belong to non-contact type temperature measurement.These two kinds of methods all are used widely with its special advantages, but exist in the traceability problem of using under the vacuum equally.In order to solve the trace to the source problem of this dual mode under vacuum, guarantee that simultaneously various environmental factors all are consistent in calibration process, do not disturb each other.Having designed the Shuangzi vacuum chamber structure is resolved this problem.The work that can connect together of Shuangzi vacuum cavity can be taken apart respectively again and worked, and through this vacuum structure identical calibration environment can either be provided, and does not disturb each other simultaneously.TDLAS technology (Tunable Diode Laser Absorption Spectroscopy) is a kind of of spectroscopy remote sensing technology; Mainly be used for the temperature and the concentration of measurement gas; The TDLAS technology has advantages such as very strong selectivity, high sensitivity, high spectral resolution, system's versatility, can realize the high precision online measuring of gas temperature and concentration.Thereby temperature sensor influences its measurement owing to material behavior under vacuum environment changes easily; And the TDLAS thermometry adopts optical instrument; The problem that does not have this respect, very little to a temperature influence of measurement environment simultaneously, can carry out environment temperature field distribution measurement fast.
Description of drawings
Fig. 1 is temperature survey and the structural representation of calibration platform under the embodiment of the present invention space vacuum environment.
Mark is listed as follows among the figure:
The 10-signal generator; The 11-lock-in amplifier; 12-laser controlling unit; The 13-data acquisition processing device; 14-temperature secondary instrument; The 15-photodetector; The 16-laser instrument; The 17-calibration cell; The 18-annular space; The vacuum chamber of 19-the 2nd vacuum cavity; The vacuum chamber of 20-the 1st vacuum cavity; The 21-laser optical path; The mirror surface of 22-the 1st vacuum cavity cavity lower end; The mirror surface of 23-the 1st vacuum cavity cavity upper end; 24-optical fiber inlet; The outlet of 25-optical fiber; The 26-threeway; The 27-push-pull valve; The 28-molecular pump; The 29-mechanical pump; The 30-solenoid valve; 31-standard temperature flowmeter sensor; 32-the 1st vacuum cavity; 33-the 2nd vacuum cavity; The 34-temperature sensor.
Embodiment
The present invention will be described below in conjunction with accompanying drawing (Fig. 1).
Fig. 1 is temperature survey and the structural representation of calibration platform under the embodiment of the present invention space vacuum environment.As shown in Figure 1; Temperature survey under the space vacuum environment and calibration platform; Comprise calibration cell 17; Be provided with Shuangzi vacuum chamber (promptly connecting into the vacuum chamber 20 of the 1st two vacuum cavities and the vacuum chamber 19 of the 2nd vacuum cavity through threeway 26) in the said calibration cell, said Shuangzi vacuum chamber comprises the 1st vacuum cavity 32 and the 2nd vacuum cavity 33, and said the 1st vacuum cavity 32 is connected vacuum withdraw device with the 2nd vacuum cavity 33 through threeway 26; Be provided with standard temperature flowmeter sensor 31 on the outer wall of said the 1st vacuum cavity 32 and on the outer wall of said the 2nd vacuum cavity 33, said standard temperature flowmeter sensor 31 connects temperature secondary instruments 14; Be provided with the laser optical path reflection unit in the vacuum chamber 20 of said the 1st vacuum cavity, be used to calibrate contactless temperature-measuring system based on the tunable diode laser absorption spectroscopy technology; The vacuum chamber 19 of said the 2nd vacuum cavity is used to hold temperature sensor 34, adopts the contact temperature-measuring system of said temperature sensor 34 with calibration.Said temperature sensor 34 is claimed temperature sensor to be checked or thermometer to be checked again.Said laser optical path reflection unit comprises mirror surface 23 that is positioned at the 1st vacuum cavity cavity upper end and the mirror surface 22 that is positioned at the 1st vacuum cavity cavity lower end, is provided with the optical fiber inlet 24 of laser input and the optical fiber outlet 25 of exporting through the laser after certain number of times reflection on said the 1st vacuum cavity cavity.Said temperature sensor 34 is installed on the inwall of the 2nd vacuum cavity 33, and said temperature sensor 34 connects temperature secondary instrument 14.Said calibration cell 17 adopts liquid nitrogen tank, alcohol trough, tank or oil groove.Said vacuum withdraw device comprises mechanical pump 29, molecular pump 28, push-pull valve 27 and solenoid valve 30; Said mechanical pump 29, molecular pump 28 are connected with push-pull valve 27 successively; Said push-pull valve 27 connects said Shuangzi vacuum chamber through threeway 26, and said solenoid valve 30 is parallel to said molecular pump 28 and push-pull valve 27.Said the 1st vacuum cavity 32 and the 2nd vacuum cavity 33 all adopt the red copper material.Be provided with annular space 18 on the outer wall of said the 1st vacuum cavity and on the outer wall of said the 2nd vacuum cavity; The bottom of said annular space 18 is connected with said outer wall; The top of said annular space 18 is communicated with atmosphere, and said standard temperature flowmeter sensor 31 is positioned at said annular space 18.Said optical fiber outlet 25 connects photodetector 15, and said photodetector 15 connects data acquisition processing device 13; Said optical fiber inlet 24 connects laser instrument 16, and said laser instrument 16 connects laser controlling unit 12, and said laser controlling unit 12 receives the mixed signal of signal generator 10 and lock-in amplifier 11.
Along with science and technology development; The manufacturing of all kinds of sophisticated products and extraordinary scientific experiment all require to have specific working environment; The calibrating precondition of thermal sensor is exactly that constant temperature field must meet the demands, so the height of thermostatic control precision just becomes one of conditio sune qua non in the actual calibrating.Calibration cell is the environment temperature testing equipment that particularly in the calibrating of temperature Instrument instrument, must use in temperature test and the temperature control, is used to provide the field of the constant temperature under the different temperature condition.Calibration cell has obtained using widely in the temperature measurement calibration operation, and the quality of the technical feature of calibration cell is determining the quality of metering, calibration operation.According to the requirement of calibration cell technical feature test specification, general main calibration cell the key technical indexes is temperature fluctuation property, temperature homogeneity and deviation of reading.The calibration cell that is used at present examine and determine mainly contains: alcohol cryostat,, water termostat groove, oily calibration cell.They are gained the name according to the thermostatic medium difference.Wherein the alcohol cryostat, is used to provide-100 ℃～temperature temperature below 5 ℃; The water termostat groove is used to provide 5 ℃～95 ℃ temperature temperature field; The oil calibration cell is used to provide 95 ℃～300 ℃ temperature temperature field.The medium of oil calibration cell adopts edible oil and steam cylinder oil, silicone oil etc. usually.And adopt liquid nitrogen or liquid helium as medium usually for the acquisition of-100 ℃ of following temperature.In our research, the design of thermostatic bath system comprises calibration cell, design calibration cell lid and the vacuum system fixed mechanism of calibration cell selection OK range.Only need examine and determine 0 ℃ and 100 ℃ of points, basis " JJG 368-2000 works with copper one CopperNickel thermocouple vertification regulation " thermopairs according to " JJG 229-1998 industry platinum, copper thermistor vertification regulation " industrial platinum resistance and need examine and determine liquid nitrogen temperature point ,-79 ℃, 100 ℃, 200 ℃, 300 ℃; The calibration of thermistor then according to its range per 10 ℃ as calibrating at interval, general range-50 ℃～200 ℃.
The principle of TDLAS commercial measurement is when a branch of one-wavelength laser passes through gas medium, because gas adsorption effect makes laser intensity change.Said laser intensity changes follows the Beer-Lambert law.TDLAS temperature measurement technology under the vacuum environment in order to improve thermometric precision and sensitivity, adopts wavelength-modulation technique to carry out temperature survey because pressure is extremely low in the experiment.Low frequency sawtooch sweep signal is with after the high frequency sinusoidal modulation signal mixes; Be carried in the tunable laser input end; Scanning and modulation take place at the absorption line annex in the wavelength of drive laser; Output laser gets in the gas medium (vacuum chamber) through optical fiber after collimated; Laser signal after the transmission spreads out of vacuum chamber by optical fiber and converts electric signal into through the photodetector reception, and one tunnel input lock-in amplifier carries out harmonic wave and detects, and one the tunnel imports in the data collecting card to monitor the variation of laser intensity in the measuring process.
In the test of ground simulation space thermal environment, the position at the temperature point place of region of interest can be divided into spacecraft temperature and experimental facilities temperature two parts.The temperature survey at these positions at present mainly adopts temperature sensor to measure, and mainly uses T type copper-constantan thermocouple system, compares with RTD and thermistor.In the experiment of space thermal environment simulation, mainly adopt thermopair, RTD and thermistor to carry out temperature survey as sensor, all belong to contact type temperature measuring.DLAS technology (Tunable Diode Laser Absorption Spectroscopy) has advantages such as very strong selectivity, high sensitivity, high spectral resolution, system's versatility; Can realize the high precision online measuring of gas temperature and concentration, belong to non-contact type temperature measurement.These two kinds of methods all are used widely with its special advantages, but exist in the traceability problem of using under the vacuum equally.In order to solve the trace to the source problem of this dual mode under vacuum, guarantee that simultaneously various environmental factors all are consistent in calibration process, do not disturb each other.Having designed the Shuangzi vacuum chamber structure is resolved this problem.The work that can connect together of Shuangzi vacuum cavity can be taken apart respectively again and worked, and through this vacuum structure identical calibration environment can either be provided, and does not disturb each other simultaneously.
Indicate at this, more than narration helps it will be apparent to those skilled in the art that the invention, but and the protection domain of unrestricted the invention.Any do not break away from the invention flesh and blood to being equal to replacement, modify improving and/or deleting numerous conforming to the principle of simplicity and the enforcement carried out of above narration, all fall into the protection domain of the invention.
Claims (8)
1. temperature survey and the calibration platform under the space vacuum environment; It is characterized in that, comprise calibration cell, be provided with the Shuangzi vacuum chamber in the said calibration cell; Said Shuangzi vacuum chamber comprises the 1st vacuum cavity and the 2nd vacuum cavity; Said the 1st vacuum cavity is connected vacuum withdraw device with the 2nd vacuum cavity through threeway, is provided with the standard temperature flowmeter sensor on the outer wall of said the 1st vacuum cavity and on the outer wall of said the 2nd vacuum cavity, and said standard temperature flowmeter sensor connects the temperature secondary instrument; Be provided with the laser optical path reflection unit in the vacuum chamber of said the 1st vacuum cavity, be used to calibrate contactless temperature-measuring system based on the tunable diode laser absorption spectroscopy technology; The vacuum chamber of said the 2nd vacuum cavity is used to hold temperature sensor, adopts the contact temperature-measuring system of said temperature sensor with calibration.
2. temperature survey and calibration platform under the space vacuum environment according to claim 1; It is characterized in that; Said laser optical path reflection unit comprises mirror surface that is positioned at the 1st vacuum cavity cavity upper end and the mirror surface that is positioned at the 1st vacuum cavity cavity lower end, is provided with the optical fiber inlet of laser input and the optical fiber outlet of exporting through the laser after certain number of times reflection on said the 1st vacuum cavity cavity.
3. temperature survey and calibration platform under the space vacuum environment according to claim 1 is characterized in that, said temperature sensor is installed on the inwall of the 2nd vacuum cavity, and said temperature sensor connects the temperature secondary instrument.
4. temperature survey and calibration platform under the space vacuum environment according to claim 1 is characterized in that, said calibration cell adopts liquid nitrogen tank, alcohol trough, tank or oil groove.
5. temperature survey and calibration platform under the space vacuum environment according to claim 1; It is characterized in that; Said vacuum withdraw device comprises mechanical pump, molecular pump, push-pull valve and solenoid valve; Said mechanical pump, molecular pump and push-pull valve are connected successively, and said push-pull valve connects said Shuangzi vacuum chamber through threeway, and said solenoid valve is parallel to said molecular pump and push-pull valve.
6. temperature survey and calibration platform under the space vacuum environment according to claim 1 is characterized in that, said the 1st vacuum cavity and the 2nd vacuum cavity all adopt the red copper material.
7. temperature survey and calibration platform under the space vacuum environment according to claim 1; It is characterized in that; Be provided with annular space on the outer wall of said the 1st vacuum cavity and on the outer wall of said the 2nd vacuum cavity; The bottom of said annular space is connected with said outer wall, and the top of said annular space is communicated with atmosphere, and said standard temperature flowmeter sensor is positioned at said annular space.
8. temperature survey and calibration platform under the space vacuum environment according to claim 2 is characterized in that, said optical fiber outlet connects photodetector, and said photodetector connects data acquisition processing device; Said optical fiber inlet connects laser instrument, and said laser instrument connects the laser controlling unit, and said laser controlling unit receives the mixed signal of signal generator and lock-in amplifier.
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| CN103115699A (en) * | 2013-02-06 | 2013-05-22 | 北京东方计量测试研究所 | Temperature equalizing system for calibration of temperature sensors in vacuum |
| CN103134773A (en) * | 2013-02-06 | 2013-06-05 | 北京东方计量测试研究所 | Vacuum cavity for tunable diode laser absorption spectroscopy (TDLAS) temperature measurement and calibration |
| CN103175634A (en) * | 2013-02-06 | 2013-06-26 | 北京东方计量测试研究所 | TDLAS (tunable diode laser absorption spectroscopy) temperature calibration system |
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| CN107192478A (en) * | 2017-07-05 | 2017-09-22 | 明光旭升科技有限公司 | Temperature sensor calibration method under a kind of vacuum environment |
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