JPH10261620A - Surface treater - Google Patents
Surface treaterInfo
- Publication number
- JPH10261620A JPH10261620A JP6609497A JP6609497A JPH10261620A JP H10261620 A JPH10261620 A JP H10261620A JP 6609497 A JP6609497 A JP 6609497A JP 6609497 A JP6609497 A JP 6609497A JP H10261620 A JPH10261620 A JP H10261620A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- surface treatment
- power supply
- halogen
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Drying Of Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体素子の表面処
理装置にかかわり、特にプラズマを用いて半導体表面の
エッチングや成膜を行なう表面処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus for a semiconductor device, and more particularly to a surface treatment apparatus for etching or forming a film on a semiconductor surface using plasma.
【0002】[0002]
【従来の技術】半導体素子のエッチングや成膜に現在広
く用いられている装置は、プラズマを利用する装置であ
る。本発明はこのようなプラズマを利用した装置に広く
応用できるものであるが、ここではそのうちの一つであ
るECR(電子サイクロトロン共鳴)方式と呼ばれている装
置を例に取り従来技術を説明する。この方式では、外部
より磁場を印加した真空容器中でマイクロ波によりプラ
ズマを発生させる。磁場により電子はサイクロトロン運
動をし、この周波数とマイクロ波の周波数を共鳴させる
ことで効率良くプラズマを発生できる。また磁場により
プラズマの壁への拡散が抑えられ、高密度のプラズマが
発生できる。試料に入射するイオンを加速するために試
料にはバイアス電圧が印加される。プラズマとなるガス
には例えばエッチングを行なう場合には塩素やフッ素な
どのハロゲンガスが用いられる。エッチングのほかに膜
の堆積などにもこの装置は使われている。2. Description of the Related Art An apparatus widely used at present for etching and film formation of a semiconductor element is an apparatus utilizing plasma. The present invention can be widely applied to an apparatus using such a plasma, but here, the prior art will be described by taking an example of an apparatus called an ECR (Electron Cyclotron Resonance) method as one of them. . In this method, plasma is generated by microwaves in a vacuum vessel to which a magnetic field is externally applied. Electrons perform cyclotron motion due to the magnetic field, and plasma can be efficiently generated by resonating this frequency with the frequency of the microwave. Further, the diffusion of the plasma to the wall is suppressed by the magnetic field, and high-density plasma can be generated. A bias voltage is applied to the sample to accelerate ions incident on the sample. For example, when etching is performed, a halogen gas such as chlorine or fluorine is used as the plasma gas. This equipment is used not only for etching but also for depositing films.
【0003】この装置の主に高精度化をはかる目的で特
開平6-151360が知られている。この発明では、試料に印
加するバイアス電圧をオンーオフと間欠的に制御するこ
とにより、エッチングしたい物質であるSiと下地酸化膜
との選択比を高くする。[0003] Japanese Patent Application Laid-Open No. 6-151360 is known mainly for the purpose of improving the accuracy of this apparatus. In the present invention, the selectivity between Si, which is the substance to be etched, and the base oxide film is increased by intermittently controlling the bias voltage applied to the sample between on and off.
【0004】[0004]
【発明が解決しようとする課題】近年の半導体素子で
は、その微細化に伴い加工の高精度化がこれまで以上に
要求されている。具体的には、MOS(metal oxide semico
nductor)トランジスタのゲート酸化膜の厚さは256M以降
のメモリ素子では約4nmになると予想されている。この
ような薄いゲート酸化膜を有する素子の加工にはこれま
で以上の高い選択比が要求されて、新しい技術が不可欠
となる。In recent years, semiconductor devices have been required to have higher processing accuracy as they have been miniaturized. Specifically, MOS (metal oxide semico
The thickness of the gate oxide film of the nductor transistor is expected to be about 4 nm for memory devices of 256M and below. Processing of an element having such a thin gate oxide film requires a higher selectivity than ever, and new technology is indispensable.
【0005】本発明の目的はこの新たな課題を解決し
て、Siなどの半導体と酸化膜などの絶縁物とのエッチン
グ速度について高い選択比を得る表面処理装置を提供す
ることである。An object of the present invention is to solve this new problem and to provide a surface treatment apparatus which can obtain a high selectivity with respect to an etching rate between a semiconductor such as Si and an insulator such as an oxide film.
【0006】[0006]
【課題を解決するための手段】本発明によれば、上記目
的は、試料に印加するバイアス電源の出力を間欠的に制
御して、かつエッチングガスとして塩素などのエッチン
グを進行させるハロゲンガスと堆積性のあるガスを混合
させることにより、達成する。According to the present invention, an object of the present invention is to intermittently control the output of a bias power supply applied to a sample, and to deposit a halogen gas for promoting etching such as chlorine as an etching gas. This is achieved by mixing toxic gases.
【0007】[0007]
(実施例1)以下実施例を図1により説明する。図1
(a)はプラズマエッチング装置の全体構成図である。マ
イクロ波電源11から導波管12と導入窓13を介して
真空容器14内にマイクロ波が導入される。真空容器1
4の材質は金属で内面に絶縁コーティングしてある。導
入窓13の材質は石英、セラミックなど電磁波を透過す
る物質である。真空容器14中にはガス導入管110か
らガスが導入される。電磁石15の磁場強度はマイクロ
波の周波数と共鳴を起こすように設定されて、たとえば
周波数が2.45GHzならば磁場強度は875Gaussである。こ
の磁場強度でプラズマ16中の電子のサイクロトロン運
動が電磁波の周波数と共鳴するために、効率よく電磁波
のエネルギーがプラズマに供給され高密度のプラズマが
できる。試料17は試料台18の上に設置される。試料
に入射するイオンを加速するために、バイアス電源19
が試料台18に接続されている。バイアス電源の周波数
に特に制限はないが、通常バイアス電源の周波数は20
0kHzから20MHzの範囲が実用的である。図1(b)はバ
イアス電源19の電圧波形111を示す。本発明に従
い,電圧はある適当な間隔でオンオフされる。(Embodiment 1) An embodiment will be described below with reference to FIG. FIG.
(a) is an overall configuration diagram of a plasma etching apparatus. Microwaves are introduced from a microwave power supply 11 into a vacuum vessel 14 through a waveguide 12 and an introduction window 13. Vacuum container 1
The material of No. 4 is metal and the inner surface is insulated and coated. The material of the introduction window 13 is a material that transmits electromagnetic waves, such as quartz or ceramic. Gas is introduced into the vacuum vessel 14 from a gas introduction pipe 110. The magnetic field strength of the electromagnet 15 is set to resonate with the frequency of the microwave. For example, if the frequency is 2.45 GHz, the magnetic field strength is 875 Gauss. Since the cyclotron motion of the electrons in the plasma 16 resonates with the frequency of the electromagnetic wave at this magnetic field intensity, the energy of the electromagnetic wave is efficiently supplied to the plasma, and a high-density plasma is generated. The sample 17 is placed on a sample stage 18. A bias power supply 19 is used to accelerate ions incident on the sample.
Are connected to the sample table 18. There is no particular limitation on the frequency of the bias power supply.
A range from 0 kHz to 20 MHz is practical. FIG. 1B shows a voltage waveform 111 of the bias power supply 19. According to the invention, the voltage is turned on and off at some suitable interval.
【0008】この装置で半導体素子のゲートに多く用い
られる酸化膜上の多結晶Si(poly Si)をエッチングした
結果を次に述べる。エッチングのガスにはCl2と堆積性
のガスとして酸素の混合ガスを用いた。真空容器14内
部の圧力を0.8Paとした。マイクロ波電源11の出力を
400Wとした。バイアス電源10の出力は60Wで,周
波数は800KHzとした。オンオフの繰り返し周波数は1
KHzとした。図2はガスとして塩素180ccと酸素2
0cc混合ガスを用い試料をエッチングした場合のpoly
Siエッチ速度(横軸)と酸化膜に対する選択比(縦
軸)の関係を示している。図2中の折れ線21は、バイ
アス電源を図1(b)に示すように間欠的に制御して、そ
のオンオフの1周期にしめるオンの割合(以後duty比と
呼ぶ)を変化させた場合のデータである。ここでは、du
ty比100%の時の電力を60W一定として、duty比を
小さくした場合はそれに比例して電力が小さくなるよう
に設定してある。つまりduty比が50%の場合は電力は
60Wの50%で30Wになる。図中に各点のduty比を
示す。図2中の折れ線22はバイアス電源を間欠制御せ
ず、連続波形のままその波高値をかえて、電力を60W
から20Wまで変えた場合のデータである。図中に各点
の電力を示す。The result of etching polycrystalline Si (poly Si) on an oxide film often used for a gate of a semiconductor element by this apparatus will be described below. A mixed gas of Cl2 and oxygen as a deposition gas was used as an etching gas. The pressure inside the vacuum vessel 14 was set to 0.8 Pa. The output of the microwave power supply 11 was 400 W. The output of the bias power supply 10 was 60 W, and the frequency was 800 KHz. ON / OFF repetition frequency is 1
KHz. FIG. 2 shows 180 cc of chlorine and oxygen 2
Poly when sample is etched using 0cc mixed gas
The relationship between the Si etch rate (horizontal axis) and the selectivity to the oxide film (vertical axis) is shown. A polygonal line 21 in FIG. 2 indicates data obtained when the bias power supply is intermittently controlled as shown in FIG. 1B to change the ON ratio (hereinafter referred to as duty ratio) for one ON / OFF cycle. It is. Here, du
The power is set to be constant at 60 W when the duty ratio is 100%, and the power is reduced in proportion to the duty ratio when the duty ratio is reduced. That is, when the duty ratio is 50%, the power is 30 W at 50% of 60 W. The duty ratio of each point is shown in the figure. A polygonal line 22 in FIG. 2 indicates that the bias power supply is not intermittently controlled, the peak value is changed as a continuous waveform, and the power is reduced to 60 W.
It is the data when it changed from to 20W. The power at each point is shown in the figure.
【0009】図2からわかるように、ガス系に塩素と酸
素の混合ガスを用いバイアス電源を間欠的に印加するこ
とによりそのduty比50%以下の領域では、連続的なバ
イアスと比較しておなじpoly Siエッチ速度にて選択比
が上昇することがわかる。図3は図2の条件からガス種
だけを変えたデータであり、ガスは塩素単体を用いてい
る。この場合は塩素酸素の混合ガスと比較して選択比の
絶対値が小さいことに加えて、バイアス電圧を間欠的に
制御した場合の効果も小さいことがわかる。図2におい
てduty比をさらに下げると選択比はさらに上昇するduty
比5%未満ではpoly Siのエッチ速度が極端に落ちるた
めに実用的なduty比の範囲は5から50%である。As can be seen from FIG. 2, when a bias power supply is intermittently applied to a gas system using a mixed gas of chlorine and oxygen, the region where the duty ratio is 50% or less is compared with a continuous bias. It can be seen that the selectivity increases with the poly Si etch rate. FIG. 3 shows data obtained by changing only the gas type from the conditions of FIG. 2, and the gas uses chlorine alone. In this case, it can be seen that the effect of controlling the bias voltage intermittently is small, in addition to the fact that the absolute value of the selectivity is small as compared with the mixed gas of chlorine and oxygen. In FIG. 2, when the duty ratio is further reduced, the selection ratio further increases.
If the ratio is less than 5%, the range of the practical duty ratio is 5 to 50% because the etching speed of poly Si is extremely reduced.
【0010】次に、バイアス電圧の間欠にかかわらず堆
積性を有するガスを混合した場合に間欠制御の効果が上
がる理由を考察する。塩素はpoly Siのエッチングを進
行させるガスで、一方酸素などの堆積性のガスはエッチ
ングを阻害する。特に酸化膜などのエッチ速度が小さい
物質すなわち塩素との反応速度が小さい物質では、少し
でも堆積物があると塩素との反応よりも堆積の方が勝る
のでエッチ速度は極端に落ち、poly Siの対酸化膜選択
比が上昇する。バイアスが印加されていると加速された
イオンが試料表面に入射してエッチング反応を促進す
る。バイアスが連続的だと堆積物が付着すると同時に常
に加速イオンも試料に入射しているので堆積物がスパッ
タされてエッチングを阻害する効果が低くなる。一方、
バイアス電圧を間欠的に印加するとバイアスオフの期間
ではイオンは加速されず、従って堆積物の付着が効率的
に生じて選択比を高める効果が顕著になる。あまりオフ
期間が長くなると酸化膜のみならずpoly Siのエッチン
グも阻害されて実用的ではなくなるので、加速されたイ
オンの入射期間すなわちduty比に最適値が存在する。従
来例では堆積ガスの効果は述べられていない。また先の
考察自体も従来にない考え方で、従ってこの発明は従来
例からは容易類推は不可能であり、我々の実験により初
めて見いだされたものである。Next, the reason why the effect of the intermittent control is improved when a gas having a deposition property is mixed regardless of the intermittent bias voltage will be considered. Chlorine is a gas that advances the etching of poly Si, while deposition gases such as oxygen inhibit the etching. In particular, in the case of a substance with a low etch rate, such as an oxide film, that is, a substance with a low reaction rate with chlorine, if there is even a small amount of deposit, the deposition rate is higher than the reaction with chlorine. The oxide film selectivity increases. When a bias is applied, accelerated ions are incident on the sample surface to accelerate the etching reaction. When the bias is continuous, the deposited ions are always incident on the sample at the same time as the deposited particles are adhered, so that the deposited materials are sputtered and the effect of inhibiting the etching is reduced. on the other hand,
When the bias voltage is intermittently applied, ions are not accelerated during the bias-off period, so that deposits are efficiently attached and the effect of increasing the selectivity becomes remarkable. If the off-period is too long, etching of not only the oxide film but also poly Si is hindered and becomes impractical. Therefore, there is an optimum value for the incident period of the accelerated ions, that is, the duty ratio. In the conventional example, the effect of the deposition gas is not described. In addition, the above discussion itself is a new idea, and therefore, the present invention cannot be easily analogized from the conventional example, and has been found for the first time by our experiments.
【0011】(実施例2)図4は本発明を適用する別の
装置構造で、この装置では数百kHzから数十MHzのいわい
るラジオ波帯(以後rfと呼ぶ)の周波数で誘導結合によ
りプラズマを発生させる。真空容器43はアルミナや石
英などの電磁波を透過する物質でつくられている。その
回りに、プラズマ410を発生させるための電磁コイル
42が巻いてある。コイルにはrf電源44が接続されて
いる。真空容器41内には試料台48がありその上に試
料47がおかれ、試料台にはバイアス電源49が接続さ
れている。真空容器41には上蓋45がついているがこ
れは一体型でもかまわない。(Embodiment 2) FIG. 4 shows another apparatus structure to which the present invention is applied. In this apparatus, inductive coupling is performed at a frequency in a radio wave band (hereinafter referred to as rf) of several hundred kHz to several tens MHz. Generates plasma. The vacuum container 43 is made of a material that transmits electromagnetic waves, such as alumina and quartz. An electromagnetic coil 42 for generating plasma 410 is wound therearound. An rf power supply 44 is connected to the coil. A sample table 48 is provided in the vacuum vessel 41, and a sample 47 is placed thereon. A bias power supply 49 is connected to the sample table. The vacuum container 41 has an upper lid 45, but this may be an integral type.
【0012】本発明に従い、バイアス電源49は間欠的
に制御して、エッチングガスには塩素と堆積性のガスと
して窒素の混合ガスを用いた。窒素も半導体表面を窒化
することでエッチングを阻害し、酸素と同様な働きをす
る。エッチングはrf電源44の周波数を2MHzとしてバイ
アス電源49の周波数を13.56MHzとしたガスは塩素150c
cと窒素50ccを混合し圧力は0.8Paとした。この実施例で
も図2と図3に示すデータと同じ傾向が得られ、本発明
の有用性がわかった。According to the present invention, the bias power supply 49 is intermittently controlled, and a mixed gas of chlorine and nitrogen as a deposition gas is used as an etching gas. Nitrogen also inhibits etching by nitriding the semiconductor surface, and acts similarly to oxygen. For etching, the frequency of the rf power supply 44 was set to 2 MHz, and the frequency of the bias power supply 49 was set to 13.56 MHz.
c and 50 cc of nitrogen were mixed, and the pressure was set to 0.8 Pa. Also in this example, the same tendency as the data shown in FIGS. 2 and 3 was obtained, indicating the usefulness of the present invention.
【0013】図4に示す装置では、電磁コイル42は上
蓋45の上に設置されていても効果は同じである。In the device shown in FIG. 4, the effect is the same even if the electromagnetic coil 42 is installed on the upper lid 45.
【0014】(実施例3)図5は本発明を適用する別の
装置構造で、この装置ではrf周波数の容量結合によりプ
ラズマを発生させる。真空容器51内には2枚の電極5
2、55が平行に配置してある。電極にはそれぞれrf電
源53とバイアス電源56が接続してある。試料54は
試料台をかねる電極55の上におかれる。ガスは試料と
対向した電極52に開いた穴から導入管58を通して容
器内に入れられる。プラズマ57は2枚の電極の間で発
生する。Embodiment 3 FIG. 5 shows another apparatus structure to which the present invention is applied. In this apparatus, plasma is generated by capacitive coupling of an rf frequency. In the vacuum vessel 51, two electrodes 5 are provided.
2, 55 are arranged in parallel. An rf power supply 53 and a bias power supply 56 are connected to the electrodes, respectively. The sample 54 is placed on an electrode 55 serving also as a sample stage. The gas is introduced into the container through the introduction tube 58 through a hole opened in the electrode 52 facing the sample. Plasma 57 is generated between the two electrodes.
【0015】このタイプの装置でもバイアス電源56を
間欠的に制御してガスとして塩素と堆積性のガスを混合
することにより、先の実施例と同じ効果が得られる。In this type of apparatus, the same effect as in the previous embodiment can be obtained by intermittently controlling the bias power supply 56 and mixing chlorine and a deposition gas as gas.
【0016】堆積性のガスとしては先に述べた酸素と窒
素に加えて、CO,CO2,NH3などの酸素と窒素を含むガスで
も同様な効果がある。またそれ以外にCH3,CH2F2などの
炭素を含むガスを堆積性が強く同様な効果を発揮する。Similar effects can be obtained by using a gas containing oxygen and nitrogen such as CO, CO2 and NH3 in addition to the above-mentioned oxygen and nitrogen as the deposition gas. In addition, a gas containing carbon, such as CH3 and CH2F2, has a strong deposition property and exhibits the same effect.
【0017】また、エッチングを促進するハロゲンガス
は塩素のほかにF2,HBr,HIあるいは塩素を含むこれらの
ハロゲンガスの混合でも効果は同じである。またこれら
堆積性ガスの混合率は0.5から50%が適当な範囲である、
すなわち混合率が小さすぎると効果がなくなり、多すぎ
るとエッチングが進行しなくなる。The same effect can be obtained by mixing these halogen gases containing F2, HBr, HI or chlorine in addition to chlorine. Also, the mixing ratio of these deposition gases is 0.5 to 50% is an appropriate range.
That is, if the mixing ratio is too small, the effect is lost, and if it is too large, the etching does not proceed.
【0018】さらに以上述べたガス系に濃度やプラズマ
安定性を変える目的でAr,Heなどの希ガスを混合しても
本発明の効果を損なうものではない。Further, even if a rare gas such as Ar or He is mixed with the gas system described above for the purpose of changing the concentration or the plasma stability, the effect of the present invention is not impaired.
【0019】[0019]
【発明の効果】以上のように本発明により、poly Siな
どの半導体を酸化膜などの絶縁物に対して高い選択比で
エッチングできる。As described above, according to the present invention, a semiconductor such as poly Si can be etched with a high selectivity to an insulator such as an oxide film.
【図1】本発明を適用する装置の全体構成図。FIG. 1 is an overall configuration diagram of an apparatus to which the present invention is applied.
【図2】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。FIG. 2 is a diagram showing the relationship between the etch rate of poly Si and the selectivity to oxide film.
【図3】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。FIG. 3 is a diagram showing a relationship between an etch rate of poly Si and an oxide film selectivity.
【図4】本発明を適用する装置の全体構成を示す図。FIG. 4 is a diagram showing an overall configuration of an apparatus to which the present invention is applied.
【図5】本発明を適用する装置の全体構成を示す図。FIG. 5 is a diagram showing an overall configuration of an apparatus to which the present invention is applied.
11…マイクロ波電源、12…導波管、13…導入窓、14,43,
51…真空容器、15…磁石、16,410,57…プラズマ、17,4
7,54…試料、18,48…試料台、19,49,56…バイアス電
源、110,58-ガス導入管、111…電圧波形、21,22,31,32
…折れ線、42…電磁コイル、44,53…rf電源、45…上
蓋、52,55…電極。11 ... microwave power supply, 12 ... waveguide, 13 ... introduction window, 14, 43,
51… Vacuum container, 15… Magnet, 16,410,57… Plasma, 17,4
7,54 ... sample, 18,48 ... sample stage, 19,49,56 ... bias power supply, 110,58-gas inlet tube, 111 ... voltage waveform, 21,22,31,32
... Bent line, 42 ... Electromagnetic coil, 44,53 ... rf power supply, 45 ... Top cover, 52,55 ... Electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中宇称 功一 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 水谷 巽 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 後藤 康 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所中央研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor, Koichi Nakau, 794, Higashi-Toyoi, Kazamatsu, Kamamatsu, Yamaguchi Prefecture Inside the Kasado Plant, Hitachi, Ltd. Address: Kasado Factory, Hitachi, Ltd.
Claims (11)
手段および該プラズマにより表面処理される試料を設置
する試料台と試料にバイアスを印加するための電源から
なる表面処理装置において、該真空容器中にハロゲンガ
スと堆積性ガスの混合ガスを導入しかつ、試料台に印加
するバイアスを間欠的にオンとオフに制御したことを特
徴とする表面処理装置。1. A surface treatment apparatus comprising: a vacuum vessel, means for generating plasma therein, a sample stage on which a sample to be surface-treated by the plasma is placed, and a power supply for applying a bias to the sample. A surface treatment apparatus characterized in that a mixed gas of a halogen gas and a deposition gas is introduced therein, and a bias applied to a sample stage is intermittently turned on and off.
はO2であることを特徴とする表面処理装置。2. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is O2.
は酸素原子を含むカ゛スであることを特徴とする表面処理
装置。3. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is a gas containing oxygen atoms.
はN2であることを特徴とする表面処理装置。4. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is N2.
は窒素原子を含むカ゛スであることを特徴とする表面処理
装置。5. A surface treatment apparatus according to claim 1, wherein said deposition gas mixed with halogen is a gas containing nitrogen atoms.
は炭素原子を含むカ゛スであることを特徴とする表面処理
装置。6. A surface treatment apparatus according to claim 1, wherein the deposition gas mixed with the halogen is a gas containing carbon atoms.
ンガスは塩素であることを特徴とする表面処理装置。7. A surface treatment apparatus according to claim 1, wherein said halogen gas is chlorine.
ンガスはF2,HBr,HIであることを特徴とする表面処理装
置。8. A surface treating apparatus according to claim 1, wherein the halogen gas is F2, HBr, or HI.
るバイアス電源の周波数は200KHzから20MHzの高周波で
あることを特徴とする表面処理方法。9. A surface treatment method according to claim 1, wherein the frequency of the bias power supply applied to the sample according to any one of claims 1 to 8 is a high frequency of 200 KHz to 20 MHz.
するバイアス電源を間欠的にする表面処理する方法は、
バイアスのオン-オフの1周期にしめるオンの割合が5
から50%にしたことを特徴とする表面処理方法。10. A method for surface treatment for intermittently applying a bias power supply to a sample according to any one of claims 1 to 9,
The ratio of ON to make one cycle of bias ON-OFF is 5
Surface treatment method, characterized in that the surface treatment is reduced to 50%.
ロゲンに混合する堆積性カ゛スの混合率は0.5から50%であ
ることを特徴とする表面処理装置。11. A surface treatment apparatus according to claim 1, wherein the mixing ratio of the deposition gas mixed with the halogen according to any one of claims 1 to 10 is 0.5 to 50%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6609497A JPH10261620A (en) | 1997-03-19 | 1997-03-19 | Surface treater |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6609497A JPH10261620A (en) | 1997-03-19 | 1997-03-19 | Surface treater |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10261620A true JPH10261620A (en) | 1998-09-29 |
Family
ID=13305951
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JP6609497A Pending JPH10261620A (en) | 1997-03-19 | 1997-03-19 | Surface treater |
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-
1997
- 1997-03-19 JP JP6609497A patent/JPH10261620A/en active Pending
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JPH11111677A (en) * | 1997-09-30 | 1999-04-23 | Fujitsu Ltd | Manufacture of semiconductor device |
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US10844486B2 (en) | 2009-04-06 | 2020-11-24 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
US10480072B2 (en) | 2009-04-06 | 2019-11-19 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8298951B1 (en) | 2011-04-13 | 2012-10-30 | Asm Japan K.K. | Footing reduction using etch-selective layer |
US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
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US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10566223B2 (en) | 2012-08-28 | 2020-02-18 | Asm Ip Holdings B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10023960B2 (en) | 2012-09-12 | 2018-07-17 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
US10340125B2 (en) | 2013-03-08 | 2019-07-02 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US10366864B2 (en) | 2013-03-08 | 2019-07-30 | Asm Ip Holding B.V. | Method and system for in-situ formation of intermediate reactive species |
US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
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US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10604847B2 (en) | 2014-03-18 | 2020-03-31 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10561975B2 (en) | 2014-10-07 | 2020-02-18 | Asm Ip Holdings B.V. | Variable conductance gas distribution apparatus and method |
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US9891521B2 (en) | 2014-11-19 | 2018-02-13 | Asm Ip Holding B.V. | Method for depositing thin film |
US10438965B2 (en) | 2014-12-22 | 2019-10-08 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US9899405B2 (en) | 2014-12-22 | 2018-02-20 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
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US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
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US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
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US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
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US10312129B2 (en) | 2015-09-29 | 2019-06-04 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
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US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
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US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
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US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US10262859B2 (en) | 2016-03-24 | 2019-04-16 | Asm Ip Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
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US10249577B2 (en) | 2016-05-17 | 2019-04-02 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
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US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US10541173B2 (en) | 2016-07-08 | 2020-01-21 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
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US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11107676B2 (en) | 2016-07-28 | 2021-08-31 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
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US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10943771B2 (en) | 2016-10-26 | 2021-03-09 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10720331B2 (en) | 2016-11-01 | 2020-07-21 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10622375B2 (en) | 2016-11-07 | 2020-04-14 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10644025B2 (en) | 2016-11-07 | 2020-05-05 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US12000042B2 (en) | 2016-12-15 | 2024-06-04 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11970766B2 (en) | 2016-12-15 | 2024-04-30 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10784102B2 (en) | 2016-12-22 | 2020-09-22 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468262B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
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US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10950432B2 (en) | 2017-04-25 | 2021-03-16 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11976361B2 (en) | 2017-06-28 | 2024-05-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
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US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11993843B2 (en) | 2017-08-31 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
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US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
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US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
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