JPH07283149A - Thin film vapor growth device - Google Patents
Thin film vapor growth deviceInfo
- Publication number
- JPH07283149A JPH07283149A JP8725594A JP8725594A JPH07283149A JP H07283149 A JPH07283149 A JP H07283149A JP 8725594 A JP8725594 A JP 8725594A JP 8725594 A JP8725594 A JP 8725594A JP H07283149 A JPH07283149 A JP H07283149A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- width direction
- height
- nozzle
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To uniformly feed material gas to the substrate where a film is formed by a method wherein the cross sections of the gas flow-out hole of a gas introducing nozzle and the gas flow passage leading to the gas flow-out hole, are formed in such a manner that its height is changed in the width direction, and the height in the center part in width direction becomes the lowest. CONSTITUTION:Pertaining to the cross section of the gas flow passage from the intermediate part to gas flow-out holes 15 and 16 of the first and the second gas introducing nozzles 13 and 14 on a nozzle body 8, the height H in width direction is changed. As the nozzles 13 and 14 are constructed in two stages, the gap of the middle plate 25 located between the upper plate 23 and the lower plate 24 of the nozzle body 8, namely, the height H is symmetrically changed against the center part in such a manner that the height becomes the smallest at the center part Wc in width direction, and the height becomes larger toward the edge part in width direction. The material gas passing through the nozzles 13 and 14 is moved to both edge parts side, and the material gas is uniformly fed to the whole surface of the substrate where film is formed. As a result, the film thickness of the substrate, where film is formed, can be formed uniformly.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、被成膜基板に供給する
原料ガスの流れを改善した薄膜気相成長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film vapor deposition apparatus in which the flow of a source gas supplied to a film formation substrate is improved.
【０００２】[0002]
【従来の技術】図４は、本発明者が先に提案した薄膜気
相成長装置の断面図である（特願平５−２４７５１１号
参照）。横型の薄膜気相成長装置における角筒状又は円
筒状の反応容器１の内部に、被成膜基板２が載置される
傾斜面をもつサセプタ３がシャフト４によって支持され
ており、サセプタは反応容器の周囲に配設した高周波加
熱コイル５に通電することにより加熱される。反応容器
１の前方に原料ガスとパージガスを導入するノズル機構
があり、反応容器の前方フランジ６にノズルフランジ７
が取り付けられている。ノズルフランジの円筒状容器内
に２段になったノズル体８が装着されており、ノズルフ
ランジの環状ガス通路９にパージガス導入管１０からパ
ージガスが供給され、同ガスは複数のパージガス引込み
口１１から反応容器内の外周空間１２に導入される。2. Description of the Related Art FIG. 4 is a cross-sectional view of a thin film vapor phase growth apparatus previously proposed by the present inventor (see Japanese Patent Application No. 5-247511). A susceptor 3 having an inclined surface on which a film formation substrate 2 is placed is supported by a shaft 4 inside a rectangular or cylindrical reaction vessel 1 in a horizontal thin film vapor deposition apparatus, and the susceptor reacts. It is heated by energizing the high-frequency heating coil 5 arranged around the container. There is a nozzle mechanism for introducing the raw material gas and the purge gas in front of the reaction container 1, and the nozzle flange 7 is provided on the front flange 6 of the reaction container.
Is attached. A two-stage nozzle body 8 is mounted in a cylindrical container of a nozzle flange, a purge gas is supplied from a purge gas introducing pipe 10 to an annular gas passage 9 of the nozzle flange, and the same gas is supplied from a plurality of purge gas inlets 11. It is introduced into the outer peripheral space 12 in the reaction vessel.
【０００３】サセプタ３の傾斜面に載置された被成膜基
板２はノズル体８からの原料ガスの流れに対し斜めに位
置する。図５の斜視図、図６（ａ）の図１におけるＡ−
Ａ線での断面図に示すように、同ノズル体は２段の第１
ノズル１３と第２ノズル１４からなり、第１ノズルの原
料ガス吹き出し口１５は第２ノズルの吹き出し口１６よ
り被成膜基板２に近いところに位置し、両ノズルは、被
成膜基板１３の近くでは矩形断面で断面積もほぼ一様で
あり、ノズルフランジ６の近傍では流路は狭まり、円形
の取付け基部１７に至る。この取付け基部１７の端面に
は第１及び第２ノズル１３，１４に連通する原料ガスの
吹き込み口１８，１９が形成されており、両ノズルのガ
ス吹き込み口はＯリング２０で隔離されており、各吹き
込み口には原料ガス吹き込み口２１，２２から第１及び
第２の原料ガスを供給している。The film formation substrate 2 placed on the inclined surface of the susceptor 3 is positioned obliquely with respect to the flow of the source gas from the nozzle body 8. 5 is a perspective view and FIG. 6A is A- in FIG.
As shown in the sectional view taken along the line A, the nozzle body has a two-stage first
It is composed of a nozzle 13 and a second nozzle 14, and the source gas outlet 15 of the first nozzle is located closer to the film formation substrate 2 than the outlet 16 of the second nozzle. The rectangular cross section has a substantially uniform cross-sectional area in the vicinity, and the flow passage narrows near the nozzle flange 6 to reach the circular mounting base 17. On the end face of the mounting base 17, raw material gas blowing ports 18 and 19 communicating with the first and second nozzles 13 and 14 are formed, and the gas blowing ports of both nozzles are isolated by an O-ring 20. The first and second raw material gases are supplied to the respective blowing openings from the raw material gas blowing openings 21 and 22.
【０００４】第１ノズル１３の原料ガス吹き出し口１５
が第２ノズル１４の吹き出し口１６より被成膜基板２に
近いところに位置し、両ノズルからの原料ガスは被成膜
基板１３の直前で混合するから、同基板に到達するまで
の低温域で反応することによる成膜材料の損失を防ぐこ
とができる。Raw material gas outlet 15 of the first nozzle 13
Is located closer to the film formation target substrate 2 than the blowout port 16 of the second nozzle 14, and the source gases from both nozzles are mixed immediately before the film formation target substrate 13; It is possible to prevent the loss of the film-forming material due to the reaction.
【０００５】第１及び第２ノズル１３，１４は反応容器
１の前方部、上流側奥深くまで差し込まれているが、上
流側からパージガスを流しているから、原料ガスの流れ
が逆流し、反応容器の前方部に滞留することがなく、反
応容器壁面への反応生成物の付着を防止する。The first and second nozzles 13 and 14 are inserted deeply in the front part of the reaction vessel 1 and deep in the upstream side, but since the purge gas is flowing from the upstream side, the flow of the raw material gas flows backward and the reaction vessel It does not stay in the front part of the container and prevents the reaction product from adhering to the wall surface of the reaction vessel.
【０００６】[0006]
【発明が解決しようとする課題】被成膜基板２に形成さ
れる膜の厚さ、膜質を均一にするためには、基板全体に
同じ濃度の原料ガスを一様に供給しなければならない。
上述の薄膜気相成長装置における第１及び第２ノズル１
３，１４はそのガス吹き出し口１５，１６を含めて被成
膜基板寄り部分の流路断面が矩形であり、その幅Ｗは高
さＨの５倍以上ある。このとき、ノズルから吹き出され
る原料ガスの幅方向の流速分布は図６（ｂ）に示すよう
に、幅方向両端部分における内壁の抵抗により、幅方向
中央の流速ｖが最も速く、両端部分に向かうほど流速が
低下する。したがって、被成膜基板１３が吹き出し口１
５，１６の幅と同程度のものである場合、基板全面に原
料ガスを均一に供給することができない。In order to make the thickness and quality of the film formed on the film formation substrate 2 uniform, the source gas of the same concentration must be uniformly supplied to the entire substrate.
First and second nozzles 1 in the above-described thin film vapor deposition apparatus
3 and 14, the flow passage cross section of the portion near the film formation substrate including the gas outlets 15 and 16 is rectangular, and the width W thereof is 5 times or more the height H. At this time, the flow velocity distribution in the width direction of the raw material gas blown out from the nozzle is, as shown in FIG. 6B, due to the resistance of the inner wall at the width direction end portions, the flow velocity v in the width direction center is the fastest and The flow velocity decreases as it goes. Therefore, the deposition target substrate 13 is blown out from the outlet 1.
If the width is about the same as the widths of 5 and 16, the source gas cannot be uniformly supplied to the entire surface of the substrate.
【０００７】本発明は、原料供給ノズルの断面形状を改
善し、被成膜基板に均一に原料ガスを供給する横型の薄
膜気相成長装置の提供を目的とするものである。An object of the present invention is to provide a horizontal type thin film vapor phase growth apparatus in which the cross-sectional shape of a raw material supply nozzle is improved and a raw material gas is uniformly supplied to a film formation substrate.
【０００８】[0008]
【課題を解決するための手段】本発明は、サセプタで保
持されて反応容器の中に収容される被成膜基板に、原料
ガスを供給するガス導入ノズルを有する横型の薄膜気相
成長装置において、前記ガス導入ノズルおけるガス吹き
出し口及び同吹き出し口に至るガス流路の断面形状が、
その幅方向に対し高さが変化し、幅方向の中央部での高
さが最も小さくなるように形成されていることを特徴と
するものである。The present invention provides a horizontal thin film vapor phase growth apparatus having a gas introduction nozzle for supplying a source gas to a film formation substrate held by a susceptor and accommodated in a reaction vessel. The cross-sectional shape of the gas outlet in the gas introduction nozzle and the gas flow path leading to the outlet is
It is characterized in that the height is changed in the width direction and the height at the center portion in the width direction is minimized.
【０００９】[0009]
【作用】原料ガス吹き出し口の幅方向中央部でのガスの
流速が低下すると共に、幅方向端部側の流量が増加し、
被成膜基板の全面に原料ガスを均一に供給できる。[Function] The flow velocity of the gas at the center portion in the width direction of the raw material gas outlet decreases, and the flow rate at the end portion in the width direction increases.
The source gas can be uniformly supplied to the entire surface of the deposition target substrate.
【００１０】[0010]
【実施例】本発明の実施例について図面を参照して説明
する。図１は横型の薄膜気相成長装置の断面図、図２は
ノズル体の斜視図、図３は図１のＡ−Ａ線での断面図で
あり、図４ないし図６と同一符号は同等部分を示す。先
に提案した薄膜気相成長装置と異なるところは原料ガス
導入ノズルの形状であり、ノズル体８における第１及び
第２のノズル１３，１４は、中間部からガス吹き出し口
１５，１６にかけてのガス流路、即ちガス吹き出し口及
び同吹き出し口に至るガス流路の断面形状について、幅
Ｗ方向における高さＨが変えてある。両ノズルは２段に
構成されているから、ノズル体８の上板２３と下板２４
の中板２５に対する隙間、即ち高さＨは、幅方向の中央
部Ｗｃで最も小さく、幅方向の端部に向かうにつれて大
きくなるように、中央部に対して対称的に変化させてい
る。Embodiments of the present invention will be described with reference to the drawings. 1 is a cross-sectional view of a horizontal thin-film vapor deposition apparatus, FIG. 2 is a perspective view of a nozzle body, FIG. 3 is a cross-sectional view taken along the line AA of FIG. 1, and the same reference numerals as in FIGS. Shows the part. The difference from the previously proposed thin film vapor phase growth apparatus is the shape of the raw material gas introduction nozzle, and the first and second nozzles 13 and 14 of the nozzle body 8 are arranged so that the gas from the intermediate portion to the gas outlets 15 and 16 is increased. The height H in the width W direction of the flow passage, that is, the cross-sectional shape of the gas outlet and the gas passage leading to the gas outlet is changed. Since both nozzles are configured in two stages, the upper plate 23 and the lower plate 24 of the nozzle body 8 are
The gap with respect to the intermediate plate 25, that is, the height H is changed symmetrically with respect to the central portion such that the central portion Wc in the width direction has the smallest gap and becomes larger toward the end portion in the width direction.
【００１１】この高さＨの変化形状は原料ガスの流量、
及び反応容器１内の圧力により最適の状態が得られるよ
うに選定されるが、ノズル体８は高純度の石英製であり
製作上特に問題はない。このように、ノズルの幅方向Ｗ
の中央部Ｗｃでの隙間、高さＨｃが両端部の高さＨｅよ
り小さくなっているため、ノズル中央部の内壁面の抵抗
が大きくなり、ノズル中央部での原料ガスの流速が低下
すると共に、ノズル内を通過する原料ガスは両端部側へ
移動する。したがって、各ノズル１３，１４は、その幅
方向に対する隙間、高さの変化を最適化することによ
り、被成膜基板２の全面に原料ガスを均一に供給するこ
とが可能になる。The changing shape of the height H is the flow rate of the source gas,
The nozzle body 8 is made of high-purity quartz, and there is no particular problem in manufacturing although it is selected so as to obtain an optimum state depending on the pressure inside the reaction vessel 1. Thus, the width direction W of the nozzle
Since the gap and height Hc in the central portion Wc of the nozzle are smaller than the height He of both end portions, the resistance of the inner wall surface of the central portion of the nozzle increases, and the flow velocity of the raw material gas in the central portion of the nozzle decreases. The raw material gas passing through the nozzle moves to both ends. Therefore, each of the nozzles 13 and 14 can uniformly supply the source gas to the entire surface of the film formation substrate 2 by optimizing the gap and height change in the width direction.
【００１２】[0012]
【発明の効果】本発明は、以上説明したように、原料ガ
ス導入ノズルおけるガス吹き出し口及び同吹き出し口に
至るガス流路の断面形状が、その幅方向に対し高さが変
化し、幅方向の中央部での高さが最も小さくなるように
形成されているから、ガス吹き出し口の幅方向中央部で
のガスの流速が低下すると共に、幅方向端部側の流量が
増加し、被成膜基板の全面に原料ガスを均一に供給する
ことが可能になり、被成膜基板に形成される膜の厚さ、
膜質を均一にし向上させることができる。As described above, according to the present invention, the cross-sectional shape of the gas blowout port in the raw material gas introduction nozzle and the gas flow path leading to the blowout port is changed in the width direction and the width direction. Since it is formed so that the height at the center of the gas blowout port becomes the smallest, the flow velocity of gas at the widthwise center of the gas outlet decreases, and the flow rate at the widthwise end side increases, resulting in It becomes possible to uniformly supply the source gas to the entire surface of the film substrate, and the thickness of the film formed on the film formation substrate,
The film quality can be made uniform and improved.
【図１】本発明の実施例に係る横型の薄膜気相成長装置
の断面図である。FIG. 1 is a cross-sectional view of a horizontal thin film vapor deposition apparatus according to an embodiment of the present invention.
【図２】ノズル体の斜視図である。FIG. 2 is a perspective view of a nozzle body.
【図３】図１のＡ−Ａ線での断面図である。3 is a cross-sectional view taken along the line AA of FIG.
【図４】横型の薄膜気相成長装置についての先行技術の
断面図である。FIG. 4 is a cross-sectional view of a prior art about a horizontal type thin film vapor deposition apparatus.
【図５】先行技術におけるノズル体の斜視図である。FIG. 5 is a perspective view of a nozzle body in the prior art.
【図６】図４のＡ−Ａ線での断面図と流速分布図であ
る。6 is a cross-sectional view taken along the line AA of FIG. 4 and a flow velocity distribution diagram.
１ 反応容器 ２ 被成膜基板 ３ サセプタ ８ ノズル体 １３ 第１の原料ガス導入ノズル １４ 第２の原料ガス導入ノズル １５，１６ ガス吹き出し口 １８，１９ ガス吹き込み口 DESCRIPTION OF SYMBOLS 1 Reaction container 2 Deposition substrate 3 Susceptor 8 Nozzle body 13 1st raw material gas introduction nozzle 14 2nd raw material gas introduction nozzle 15,16 Gas blowout port 18,19 Gas blowout port
Claims (1)
容される被成膜基板に、原料ガスを供給するガス導入ノ
ズルを有する横型の薄膜気相成長装置において、前記ガ
ス導入ノズルおけるガス吹き出し口及び同吹き出し口に
至るガス流路の断面形状が、その幅方向に対し高さが変
化し、幅方向の中央部での高さが最も小さくなるように
形成されていることを特徴とする薄膜気相成長装置。1. A horizontal thin film vapor phase growth apparatus having a gas introduction nozzle for supplying a raw material gas to a film formation substrate held by a susceptor and housed in a reaction container, wherein a gas is blown out from the gas introduction nozzle. The cross-sectional shape of the gas passage extending to the mouth and the air outlet is formed so that the height changes in the width direction and the height at the center in the width direction becomes the smallest. Thin film vapor deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8725594A JPH07283149A (en) | 1994-04-04 | 1994-04-04 | Thin film vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8725594A JPH07283149A (en) | 1994-04-04 | 1994-04-04 | Thin film vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07283149A true JPH07283149A (en) | 1995-10-27 |
Family
ID=13909685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8725594A Pending JPH07283149A (en) | 1994-04-04 | 1994-04-04 | Thin film vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07283149A (en) |
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