JPH03155625A - Manufacture of plasma cvd film - Google Patents
Manufacture of plasma cvd filmInfo
- Publication number
- JPH03155625A JPH03155625A JP29552689A JP29552689A JPH03155625A JP H03155625 A JPH03155625 A JP H03155625A JP 29552689 A JP29552689 A JP 29552689A JP 29552689 A JP29552689 A JP 29552689A JP H03155625 A JPH03155625 A JP H03155625A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- pressure
- gas
- main reaction
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012495 reaction gas Substances 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 21
- 238000007086 side reaction Methods 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001272 nitrous oxide Substances 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000087 stabilizing effect Effects 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOXDGARPTQEUBR-UHFFFAOYSA-N azane silane Chemical compound N.[SiH4] BOXDGARPTQEUBR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- -1 monosilane-nitrous oxide Chemical compound 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 101150017268 secM gene Proteins 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To decompose main reaction gas before RF is applied, and to form a film containing constant composition with high reproducibility without forming a lump of a deposit by previously feeding side reaction gas at the time of forming a plasma CVD film to stabilize pressure, gas flow rate, and then stabilizing the flow rate, pressure of the main reaction gas. CONSTITUTION:A semiconductor substrate 37 formed with semiconductor elements such as a transistor, a resistor, etc., and aluminum wirings is conveyed into a vacuum vessel 34 in which insulated electrodes 32, 33 are disposed in parallel. After the vessel is once evacuated in vacuum, nitrous oxide gas of side reaction gas is fed, a discharge system is controlled to stabilize its pressure. After it is stabilized, monosilane (SiH4) of main reaction gas is fed, its pressure is controlled, stabilized, held, and a high frequency (RF) is applied. After desired time is elapsed, the RF is stopped, the gas is simultaneously stopped, and the pressure is reduced.
Description
［産業上の利用分野１
本発明は、プラズマＣＶ Ｄ ｌ！の製造方法に関する
ものである。
［従来の技術］
従来のプラズマＣＶＤ酸化シリコン膜の製造方法は、例
えば第３図に示すように表面を絶縁した電極３２及び３
３を平行に配置し、一定温度に保たれた真空容器３４内
にＣＶＤ膜を堆積する基板３７等を搬送する。続いて、
容器内を真空に引いた後、主反応ガスであるモノシラン
と副反応ガスである亜酸化窒素を流す。ガスの容量と圧
力が設定値に達した後（第２図中のｔ２２）、前記電極
に高周波（ＲＦ）を印加しくｔａｓ）、一定時間保持し
酸化シリコン膿を気相成長した後、高周波（ＲＦ）を停
止する（ｔ□）。容器内のガスを真空弓きすることによ
って排出した後、真空容器を大気圧に戻し、基板３７を
搬出する。
〔発明が解決しようとする課題〕
しかしながら、従来技術では、主反応ガスと副反応ガス
を同時に流し出し始めているが、第２図のグラフに示す
ように流量制御系の反応速度の差によってガス比が一定
とならない、特にモノシランガスの流量が多くなると、
場合によっては、ＲＦの印加前にＳｉの組成比の多い膜
や比較的大きな堆積物の塊を形成する。また、圧力が設
定値に到達し、高周波（ＲＦ）の印加開始後も、最適な
混合比とはならず、目的とする膜質とは異なった膜が形
成されたりする。この膜は、膜質がポーラス気味で、絶
縁膜として使用した場合、電流リークの原因となること
がある。また、耐湿性の点や、下地との密着性の点でし
ばしば問題となっている。
しかるに本発明は、かかる課題を解決するものであり、
その目的とするところは、形成開始時にパーティクルの
発生がなく、膜質の安定したプラズマＣＶＤ膜を提供す
ることである。
〔課題を解決するための手段〕
本発明によるプラズマＣＶＤ膜の製造方法は、（１）ａ
）副反応ガスである。亜酸化窒素ガスを流し、ガス流量
を設定値に制御する工程と、ｂ）圧力を設定値に制御す
る工程と、
Ｃ）主反応ガスであるモノシランを流し、ガス流量を設
定値に制御する工程と、
ｄ）圧力を設定値に制御する工程と、
ｅ）一定時間保持する工程と、
ｆ）高周波（ＲＦ）印加する工程を上記順序で実行する
。
（２）請求項１記載の主反応ガスがモノシランで、副反
応ガスがアンモニアである。
（３）請求項１記載の主反応ガスがＴＥＯＳ［Ｓ ｌ
（ＯＣａ Ｈｓ ） ４）で、副反応ガスが酸素である
ことを特徴とする。[Industrial Application Field 1 The present invention is applicable to plasma CVD l! The present invention relates to a manufacturing method. [Prior Art] A conventional method for manufacturing a silicon oxide film by plasma CVD includes, for example, electrodes 32 and 3 whose surfaces are insulated, as shown in FIG.
3 are arranged in parallel, and a substrate 37 on which a CVD film is to be deposited is transported into a vacuum container 34 maintained at a constant temperature. continue,
After the inside of the container is evacuated, monosilane, which is the main reaction gas, and nitrous oxide, which is a side reaction gas, are flowed. After the gas volume and pressure reach the set values (t22 in Figure 2), high frequency (RF) is applied to the electrode and held for a certain period of time to grow silicon oxide pus in the vapor phase. RF) is stopped (t□). After the gas in the container is exhausted by vacuum evacuation, the vacuum container is returned to atmospheric pressure and the substrate 37 is carried out. [Problem to be Solved by the Invention] However, in the prior art, the main reaction gas and the side reaction gas start flowing out at the same time, but as shown in the graph of Figure 2, the gas ratio changes due to the difference in reaction speed of the flow rate control system. is not constant, especially when the flow rate of monosilane gas increases.
In some cases, a film with a high composition ratio of Si or a relatively large mass of deposits is formed before RF application. Further, even after the pressure reaches the set value and the application of radio frequency (RF) is started, the optimum mixing ratio is not achieved, and a film having a different film quality than the intended one may be formed. This film has a slightly porous quality and may cause current leakage when used as an insulating film. Moreover, there are often problems in terms of moisture resistance and adhesion to the base. However, the present invention solves these problems,
The purpose is to provide a plasma CVD film that does not generate particles at the start of formation and has stable film quality. [Means for Solving the Problems] The method for manufacturing a plasma CVD film according to the present invention includes (1) a.
) is a side reaction gas. A step of flowing nitrous oxide gas and controlling the gas flow rate to the set value; b) A step of controlling the pressure to the set value; C) A step of flowing monosilane, which is the main reaction gas, and controlling the gas flow rate to the set value. and d) controlling the pressure to a set value; e) holding the pressure for a certain period of time; and f) applying radio frequency (RF). The steps are executed in the above order. (2) The main reaction gas according to claim 1 is monosilane, and the side reaction gas is ammonia. (3) The main reaction gas according to claim 1 is TEOS [S l
(OCa Hs) 4), characterized in that the side reaction gas is oxygen.
以下本発明の実施例における工程を、第１図に示すグラ
フに基づいて詳細に説明する。
まず、トランジスタや抵抗等の半導体素子及びアルミニ
ウム配線の形成された半導体基板３７を約４００℃に保
たれ、絶縁された電極３２．３３が平行に配置された真
空容器３４内に搬送する。
この容器内を一旦真空に引いた後、副反応ガスである亜
酸化窒素ガスを約１５００ｓｅｃＭ流し、排気系を制御
して圧力を約５Ｔｏｒｒに安定させる（ｔ＋ｓ）−安定
した後、主反応ガスであるモノシラン（ＳｉＨ，）を約
１１００３ＣＣ流し、圧力を再度５Ｔｏｒｒに制御し、
安定させ（ｔ＋ｓ）、５秒間保持した後（ｔ＋ｉ） 、
１３．５６ＭＨｚ、５００Ｗの高周波（ＲＦ）をε
印加する。所望の時間経過した後（ｔ＋ｉ）、ＲＦを停
止すると同時にガスを停止し、圧力を下げる。
副反応ガスのガス流量と圧力を、安定させた後、主反応
ガスを導入することによって、主反応ガスがＲＦ印加前
に分解して、堆積物の塊が形成されることがなくなった
。また、圧力安定後に一定時間保持したことによって反
応ガスの分圧が毎回同じとなり、組成の一定した膜を再
現性良く形成すること、が可能となった。
ここでは、モノシラン−亜酸化窒素系の酸化シリコン膜
について説明したが、ＴＥＯＳ−酸素系の酸化シリコン
膜、および、モノシラン−アンモニア系の窒化シリコン
膜等にも同様の結果が得られた。また、２種類の反応ガ
スからなるＣＶＤ膜の形成のみならず、３１類以上の反
応ガスによるＣＶＤＪｌｉの製造方法としても同様に適
用できた。
［発明の効果］
以上の如く本発明によれば、プラズマＣＶＤ膜の形成時
に、副反応ガスを先に流しで圧力、ガス流量を安定させ
た後、主反応ガスの流量と圧力を安定させることによっ
て、主反応ガスがＲＦ印加前に分解して、堆積物の塊が
形成されることがなく、組成の一定した膜を再現性良く
形成することが可能となり、耐湿性や膜のリーク電流の
点で問題がなくなる。Hereinafter, steps in an embodiment of the present invention will be explained in detail based on the graph shown in FIG. First, a semiconductor substrate 37 on which semiconductor elements such as transistors and resistors and aluminum wiring are formed is transported into a vacuum container 34 maintained at about 400° C. and in which insulated electrodes 32 and 33 are arranged in parallel. Once the inside of this container is evacuated, nitrous oxide gas, which is a side reaction gas, is flowed for about 1500 secM, and the exhaust system is controlled to stabilize the pressure at about 5 Torr (t+s) - After stabilizing, the main reaction gas is A certain monosilane (SiH,) was flowed at about 11003 CC, and the pressure was controlled to 5 Torr again.
After stabilizing (t+s) and holding for 5 seconds (t+i),
13.56MHz, 500W radio frequency (RF)
Apply. After the desired time has elapsed (t+i), the RF is stopped, the gas is simultaneously stopped, and the pressure is lowered. By introducing the main reaction gas after stabilizing the gas flow rate and pressure of the side reaction gas, the main reaction gas was no longer decomposed before RF application and no deposit lumps were formed. Furthermore, by holding the pressure for a certain period of time after the pressure stabilized, the partial pressure of the reaction gas remained the same every time, making it possible to form a film with a constant composition with good reproducibility. Although a monosilane-nitrous oxide-based silicon oxide film has been described here, similar results were obtained with a TEOS-oxygen-based silicon oxide film, a monosilane-ammonia-based silicon nitride film, and the like. In addition, the present invention could be applied not only to the formation of a CVD film using two types of reactive gases, but also as a method for producing CVDJli using reactive gases of 31 or more types. [Effects of the Invention] As described above, according to the present invention, when forming a plasma CVD film, the side reaction gas is first flowed to stabilize the pressure and gas flow rate, and then the flow rate and pressure of the main reaction gas are stabilized. This prevents the main reaction gas from decomposing before RF application and forming deposits, making it possible to form a film with a constant composition with good reproducibility, improving moisture resistance and reducing film leakage current. There will be no problem at all.
第１図（ａ）〜（Ｃ）は、本発明の一実施例によるプラ
ズマＣＶＤ膿形成時のＲＦ出力、主反応ガス及び副反応
ガスの流量、圧力を示すグラフである。
第２図（ａ）〜（Ｃ）は、従来のプラズマＣＶＤ１１１
ｍ形成時のＲＦ出力、主反応ガス及び副反応ガスの流量
、圧力を示すグラフである。
第３図は、プラズマＣＶＤ膜の形成装置の概略断面図で
ある。
１
２
３
４
５
６
７
８
・ＲＦ発振器
・上部電極
・下部電極
・真空容器
・ガス入口
・ガス出口
・基板
・絶縁物
箪：Ｌ 回FIGS. 1A to 1C are graphs showing RF output, flow rates of main reaction gas and side reaction gas, and pressure during plasma CVD pus formation according to an embodiment of the present invention. Figures 2 (a) to (C) show conventional plasma CVD 111.
FIG. 2 is a graph showing the RF output, the flow rate of the main reaction gas and the side reaction gas, and the pressure during the formation of m. FIG. 3 is a schematic cross-sectional view of a plasma CVD film forming apparatus. 1 2 3 4 5 6 7 8 ・RF oscillator, upper electrode, lower electrode, vacuum container, gas inlet, gas outlet, substrate, insulator cabinet: L times
Claims (3)
ガス流量を設定値に制御する工程と、ｂ）圧力を設定値
に制御する工程と、 ｃ）主反応ガスであるモノシランを流し、ガス流量を設
定値に制御する工程と、 ｄ）圧力を設定値に制御する工程と、 ｅ）一定時間保持する工程と、 ｆ）高周波（ＲＦ）印加する工程を上記順序で実行する
ことを特徴とするプラズマＣＶＤ膜の製造方法。(1) a) Flowing nitrous oxide gas, which is a side reaction gas,
A step of controlling the gas flow rate to a set value; b) A step of controlling the pressure to a set value; c) A step of flowing monosilane, which is the main reaction gas, and controlling the gas flow rate to the set value; and d) Setting the pressure. A method for manufacturing a plasma CVD film, characterized in that the steps of: controlling the value to a constant value; e) holding it for a certain period of time; and f) applying radio frequency (RF) are performed in the above order.
応ガスがアンモニアであることを特徴とするプラズマＣ
ＶＤ膜の製造方法。(2) The plasma C according to claim 1, wherein the main reaction gas is monosilane and the side reaction gas is ammonia.
A method for manufacturing a VD film.
Ｃ＿２Ｈ＿５）＿４〕で、副反応ガスが酸素であること
を特徴とするプラズマＣＶＤ膜の製造方法。(3) The main reaction gas according to claim 1 is TEOS [Si(O
C_2H_5)_4], a method for producing a plasma CVD film, characterized in that the side reaction gas is oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29552689A JPH03155625A (en) | 1989-11-14 | 1989-11-14 | Manufacture of plasma cvd film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29552689A JPH03155625A (en) | 1989-11-14 | 1989-11-14 | Manufacture of plasma cvd film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03155625A true JPH03155625A (en) | 1991-07-03 |
Family
ID=17821766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29552689A Pending JPH03155625A (en) | 1989-11-14 | 1989-11-14 | Manufacture of plasma cvd film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03155625A (en) |
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