KR100688484B1 - Apparatus of treating substrate using activated oxygen and method thereof - Google Patents
Apparatus of treating substrate using activated oxygen and method thereof Download PDFInfo
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- KR100688484B1 KR100688484B1 KR1020000072129A KR20000072129A KR100688484B1 KR 100688484 B1 KR100688484 B1 KR 100688484B1 KR 1020000072129 A KR1020000072129 A KR 1020000072129A KR 20000072129 A KR20000072129 A KR 20000072129A KR 100688484 B1 KR100688484 B1 KR 100688484B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Abstract
활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법이 개시되어 있다. 그 장치는, 자외선을 방출하는 자외선 방출램프와 활성화 산소의 이동을 차단하는 투명차단막과, 오존을 이용하여 활성화 산소를 형성하는 제1 반응실과, 그 하부에 다수의 분사구를 갖는 제1 샤워헤드판과 제2 샤워헤드 판이 일정한 간격으로 배열되어 활성화 산소를 균일하게 뿌려주는 불투명한 이중샤워헤드를 구비한다. 그 처리방법은, 오존에 자외선을 조사하여 생성된 활성화 산소를 이용하여 기판을 처리하는 방법에 있어서, 오존에 자외선을 조사하여 오존을 분해함으로써 활성화 산소를 생성하는 단계 및 상기 활성화 산소를 기판 상에 고르게 분사하여 기판을 처리하는 단계를 포함하되, 상기 자외선이 상기 기판이 안착된 처리실 내로는 투과하지 못하도록 하여, 상기 처리실 내에서는 오존이 분해되지 않도록 한다. 따라서, 활성화 산소를 이용하여 반도체 기판 상에 산화막을 증착 또는 열처리할 때 불투명한 이중샤워헤드를 이용함으로써 자외선이 반도체 기판에 닿지 않고 불균일한 오존의 분해에 의해 영향을 받지 않으므로 기판에 형성되는 산화막의 두께가 달라지는 것을 방지한다. An apparatus and method are disclosed for treating a substrate using activated oxygen. The apparatus comprises a first shower head plate having an ultraviolet emitting lamp for emitting ultraviolet rays, a transparent shielding film for blocking the movement of activated oxygen, a first reaction chamber for forming activated oxygen using ozone, and a plurality of injection holes in the lower portion thereof. And a second showerhead plate having an opaque double showerhead arranged at regular intervals to evenly spray activated oxygen. The treatment method is a method of treating a substrate using activated oxygen generated by irradiating ultraviolet light to ozone, the method comprising the steps of generating activated oxygen by decomposing ozone by irradiating ultraviolet light to ozone and on the substrate And spraying the substrate evenly to prevent the ultraviolet rays from penetrating into the processing chamber in which the substrate is seated, so that ozone is not decomposed in the processing chamber. Therefore, when an oxide film is deposited or heat-treated on a semiconductor substrate using activated oxygen, an opaque dual showerhead is used so that ultraviolet rays do not touch the semiconductor substrate and are not affected by the decomposition of uneven ozone. This prevents the thickness from changing.
활성화 산소, 이중샤워헤드, 자외선, 오존, 산화막 Activated Oxygen, Double Shower Head, Ultraviolet Light, Ozone, Oxide
Description
도 1은 종래의 활성화 산소를 이용하여 기판을 처리하는 장치의 개략도이다.1 is a schematic diagram of an apparatus for processing a substrate using conventional activated oxygen.
도 2는 도1의 장치의 샤워헤드판의 평면도이다.2 is a plan view of the showerhead plate of the apparatus of FIG.
도 3은 본 발명에 따른 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법을 설명하기 위한 개략도이다.3 is a schematic diagram illustrating an apparatus and method for treating a substrate using activated oxygen according to the present invention.
도 4는 도 3의 장치의 샤워헤드판의 평면도이다.4 is a plan view of the showerhead plate of the apparatus of FIG.
※ 도면의 주요부분에 대한 부호의 설명※ Explanation of code for main part of drawing
100 ; 하우징 102 ; 자외선 램프100;
104 ; 투명차단막 106 ; 오존생성기104;
108 ; 흡입관 110 ; 제1 반응실108;
112 ; 샤워헤드판 114 ; 제2 반응실112;
116 ; 기판 118 ; 지지대116;
120 ; 배출구 200 ; 이중샤워헤드120; Outlet 200; Dual Shower Head
202 ; 제1 샤워헤드판 204 ; 제2 샤워헤드판202; First showerhead plate 204; 2nd shower head plate
206 ; 제1 분사구 208 ; 제2 분사구
206;
본 발명은 반도체 웨이퍼와 같은 박판형 기판의 처리장치 및 그 방법에 관한 것으로서, 특히 활성화 산소를 이용한 기판의 처리장치 및 그 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus and method for thin substrates such as semiconductor wafers, and more particularly to a processing apparatus and method for substrates using activated oxygen.
반도체 소자의 제조공정 중에는 자외선을 이용하여 오존(O3)을 활성화 산소로 분해하여 기판상에 산화막을 증착하는 공정이 이용되고 있다. 특히, 자외선에 의해 분해된 활성화 산소를 이용하여 산화막을 증착하는 것을 포토 CVD(Photo Chemcal Vapor Deposition)라 한다. 또한, 자외선에 의해 분해된 활성화 산소로 산화막의 열처리를 수행할 수 있다. 예를 들면, 탄탈륨산화물(예; Ta2O5)을 증착하여 막을 형성한 후 증착된 탄탈륨산화막에 존재하는 산소공공(Oxygen vacancy)을 채워 막의 조직을 치밀화하는 데 자외선과 오존에 의해 생성된 활성화 산소를 이용하기도 한다. 다시말하면, 오존은 자외선에 의해 산소 기체와 활성화 산소로 분해되는 데, 이때 생성된 활성화 산소가 산화막을 증착하거나 열처리할 때 사용되는 것이다. In the process of manufacturing a semiconductor device, a process of depositing an oxide film on a substrate by decomposing ozone (O 3 ) into activated oxygen using ultraviolet rays is used. In particular, depositing an oxide film using activated oxygen decomposed by ultraviolet rays is called photo CVD (Photo Chemcal Vapor Deposition). In addition, heat treatment of the oxide film may be performed with activated oxygen decomposed by ultraviolet rays. For example, tantalum oxide (eg, Ta 2 O 5 ) is deposited to form a film, followed by filling oxygen vacancies present in the deposited tantalum oxide film to densify the structure of the film. Oxygen is also used. In other words, ozone is decomposed into oxygen gas and activated oxygen by ultraviolet rays, in which the generated activated oxygen is used to deposit or heat-treat an oxide film.
이하, 첨부된 도면을 참조하여 종래의 활성화 산소를 이용한 기판의 처리장치 및 그 방법에 대해 설명하기로 한다. Hereinafter, a substrate treating apparatus and a method thereof using a conventional activated oxygen will be described with reference to the accompanying drawings.
도 1은 종래의 기판의 처리장치의 개략도이다.1 is a schematic diagram of a conventional substrate processing apparatus.
도 1을 참조하면, 하우징(100)의 상부 안쪽에 설치되어 자외선을 방출하는 자외선 방출램프(102)와 자외선 방출램프(102)의 하부에 설치되어 활성화 산소의 이동을 차단하고 자외선을 통과시키는 투명차단막(104)과 투명차단막(104)의 하부에 위치하여 활성화 산소를 형성하는 제1 반응실(110)과 하우징(100)의 외부에서 오존을 생성하여 흡입관(108)을 통하여 제1 반응실(110)로 공급하는 오존생성기(106)와 제1 반응실(110)의 하부에 위치하여 다수의 분사구를 통하여 활성화 산소를 균일하게 분사하는 투명한 샤워헤드판(112) 및 샤워헤드판(112)의 하부에 있으며 기판 (116)을 지지하는 지지대(118)를 포함하는 제2 반응실(114)을 구비하고 있다. Referring to FIG. 1, a transparent light is installed inside the upper part of the
산화막 증착 또는 열처리과정을 구체적으로 살펴보면, 오존생성기(106)에서 생성된 오존은 제1 반응실(110)에서 자외선에 의해 산소 기체와 활성화 산소로 분해된다. 이어서, 활성화된 산소는 다수의 분사구가 형성된 샤워헤드판(112)을 통과하여 지지대(118)에 안착되어 있는 기판(116)에 뿌려진다. 최종적으로, 기판에 뿌려진 활성화 산소는 기판에 산화막을 증착하기도 하고 이미 증착된 산화막을 치밀화시키기도 한다. Looking at the oxide film deposition or heat treatment in detail, the ozone generated in the
도 2는 활성화 산소를 분사하는 샤워헤드판(112)을 설명하기 위한 평면도이다. 2 is a plan view for explaining a
도 2를 참조하면, 석영과 같은 투명한 재질로 이루어진 샤워헤드판(112) 상에서 수직선분인 b1b2, b3b4 등과 수평선분인 a1a
2, a3a4 등의 교차점에 자외선이 통과될 수 있는 제1 분사구(206)가 형성된다. 이때, 샤워헤드판(112)의 형상은 하우징 (100)의 형상에 따라 달라질 수 있다. Referring to FIG. 2, ultraviolet rays are detected at intersections of b 1 b 2 , b 3 b 4 , which are vertical lines, and a 1 a 2 , a 3 a 4 , which are horizontal lines, on a
상술한 종래의 기판을 처리하는 장치 및 그 방법에는 다음과 같은 문제점이 발생한다. 반도체소자의 제작에 있어서 반도체 기판의 크기가 커져감에 따라, 자외선과 오존을 이용한 산화막의 증착이나 열처리시 형성되는 산화막의 두께가 불균일해진다. 구체적으로 살펴보면, 기판에 오존만 흘려서 열처리한 경우의 산화막의 두께는 균일했으나, 자외선에 의해 생성된 활성화 산소로 처리된 산화막의 두께의 균일성이 불량해진다. 이와 같은 불균일의 원인은 기판에 자외선이 조사됨으로써 일어난다. 즉, 자외선 방출램프(102)에서 방출된 자외선은 투명 샤워헤드판(112)을 투과하여, 기판(116) 근처의 제2 반응실(114)에서도 자외선에 의해 오존이 산소가스와 활성화 산소로 분해된다. 그런데, 기판의 크기가 증가하면서 부분별로 자외선의 세기가 차이가 있으므로 이로 인하여 오존이 분해되는 정도가 부분별로 달라진다. 그러므로, 반도체 기판에 증착되는 산화막두께는 오존의 분해정도가 부분별로 달라지면서 불균일하게 된다.The following problems arise in the apparatus and method for processing the above-mentioned conventional substrate. As the size of the semiconductor substrate increases in the fabrication of semiconductor devices, the thickness of the oxide film formed during deposition or heat treatment of the oxide film using ultraviolet rays and ozone becomes uneven. Specifically, although the thickness of the oxide film in the case of heat treatment by flowing only ozone through the substrate is uniform, the uniformity of the thickness of the oxide film treated with activated oxygen generated by ultraviolet rays becomes poor. The cause of such nonuniformity is caused by ultraviolet irradiation of the substrate. That is, the ultraviolet rays emitted from the
따라서, 본 발명이 이루고자 하는 기술적 과제는 활성화 산소를 이용하여 반도체 기판 상에 산화막을 증착 또는 열처리할 때 자외선이 반도체 기판에 닿지 않고 또한 불균일한 오존의 분해에 의한 영향을 받지 않게 하여 기판에 형성되는 산화막의 두께가 달라지는 것을 방지하는 기판의 처리장치 및 그 방법을 제공하는 것이다. Accordingly, the technical problem to be achieved by the present invention is that the ultraviolet rays do not touch the semiconductor substrate and are not affected by the decomposition of uneven ozone when the oxide film is deposited or heat-treated on the semiconductor substrate using activated oxygen. The present invention provides a substrate processing apparatus and a method for preventing the thickness of an oxide film from changing.
상기 기술적 과제를 달성하기 위한 본 발명의 기판을 처리하는 장치는, 하우징 내측 상부에 설치되어 자외선을 방출하는 자외선 방출램프와, 상기 자외선 방출램프의 하부에 설치되어 활성화 산소의 이동을 차단하는 투명차단막과, 상기 투명차단막의 하부에 위치하여 활성화 산소를 생성하는 제1 반응실과, 상기 하우징의 외부에서 오존을 생성하여 상기 제1 반응실으로 공급하는 오존생성기와, 상기 제1 반응실의 하부에 설치되어 각각 다수의 분사구를 갖는 불투명한 제1 샤워헤드판과 제2 샤워헤드 판이 상기 제1 샤워헤드판에 형성된 제1 분사구와 제2 샤워헤드판에 형성된 제2 분사구가 서로 엇갈리도록 배열되어 활성화 산소를 균일하게 뿌려주는 이중샤워헤드와 상기 이중샤워헤드 하부에 놓여지는 기판을 지지하는 지지대를 포함하는 제2 반응실을 구비한다.An apparatus for processing a substrate of the present invention for achieving the above technical problem, the ultraviolet ray emitting lamp which is installed on the upper inside the housing to emit ultraviolet rays, and the transparent shielding film which is installed under the ultraviolet emitting lamp to block the movement of activated oxygen And a first reaction chamber positioned under the transparent barrier membrane to generate activated oxygen, an ozone generator for generating ozone from the outside of the housing and supplying the ozone to the first reaction chamber, and installed at a lower portion of the first reaction chamber. The opaque first shower head plate and the second shower head plate each having a plurality of injection holes are arranged such that the first injection hole formed in the first shower head plate and the second injection hole formed in the second shower head plate are alternated with each other. Second reaction chamber including a double shower head for uniformly spraying the support and a support for supporting a substrate placed under the double shower head And a.
또한, 상기 이중샤워헤드에 형성된 분사구 사이의 간격은 0.5㎝ 내지 5.0㎝ 가 바람직하며, 상기 이중샤워헤드를 이루는 상기 제1 샤워헤드판과 제2 샤워헤드판사이의 간격이 0.5㎝ 내지 5.0㎝가 되는 것이 바람직하다.In addition, the spacing between the injection holes formed in the double shower head is preferably 0.5cm to 5.0cm, the spacing between the first shower head plate and the second shower head plate constituting the double shower head is 0.5cm to 5.0cm. It is preferable.
본 발명이 이루고자 하는 다른 기술적 과제를 달성하기 위한 본 발명에 따른 기판을 처리하는 방법은, 오존에 자외선을 조사하여 생성된 활성화 산소를 이용하여 기판을 처리하는 방법에 있어서, 오존에 자외선을 조사하여 오존을 분해함으로써 활성화 산소를 생성하는 단계 및 상기 활성화 산소를 기판 상에 고르게 분사하여 기판을 처리하는 단계를 포함하되, 상기 자외선이 상기 기판이 안착된 처리실 내로는 투과하지 못하도록 하여, 상기 처리실 내에서는 오존이 분해되지 않도록 한다. According to another aspect of the present invention, there is provided a method of treating a substrate according to the present invention, wherein the ozone is irradiated with ultraviolet light in a method of treating a substrate using activated oxygen generated by irradiating ozone with ultraviolet light. Generating activated oxygen by decomposing ozone and treating the substrate by spraying the activated oxygen evenly on a substrate, wherein the ultraviolet rays do not penetrate into the processing chamber in which the substrate is seated, Do not decompose ozone.
또한, 상기 이중샤워헤드가 불투명한 것이 바람직하며, 상기 이중샤워헤드를 이루는 제1샤워헤드판에 형성된 제1 분사구와 제2 샤워헤드판에 형성된 제2 분사구가 서로 엇갈리도록 배치하여 상기 자외선이 처리실내로 투과하지 못하도록 하는 단계를 포함하는 것이 바람직하다.In addition, it is preferable that the dual shower head is opaque, and the first injection hole formed in the first shower head plate constituting the double shower head and the second injection hole formed in the second shower head plate are disposed so as to alternate with each other. It is preferable to include the step of preventing the penetration into the room.
이하, 첨부 도면을 참조하여 본 발명을 더욱 상세히 설명하기로 한다. 본 발명은 이하에서 개시되는 실시예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예는 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 보다 완전하게 설명하기 위해서 제공되어지는 것이다. Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only this embodiment to make the disclosure of the present invention complete, the scope of the invention to those skilled in the art It is provided for the sake of completeness.
도 3은 본 발명의 실시예에 의한 기판의 처리장치 및 그 방법을 설명하기 위한 개략도이다. 또한, 상기 개략도를 중심으로 본 발명의 실시예에 의한 기판의 처리방법을 함께 설명하기로 한다.3 is a schematic view for explaining a substrate treating apparatus and a method thereof according to an embodiment of the present invention. In addition, a method of treating a substrate according to an embodiment of the present invention will be described with reference to the above schematic diagram.
도 3을 참조하면, 하우징(100)의 상부에 설치되어 자외선을 방출하는 자외선 방출램프(102)와 자외선 방출램프(102)의 하부에 설치되어 활성화 산소의 이동을 차단하고 자외선을 통과시키는 투명차단막(104)이 있다. 그리고, 투명차단막(104)의 하부에는 활성화 산소를 형성하는 제1 반응실(110)이 있으며, 제1 반응실의 측면에는 하우징(100)의 외부에서 오존을 생성하여 흡입관(108)을 통하여 제1 반응실 (110)로 공급하는 오존생성기(106)가 연결되어 있다. 제1 반응실(110)의 하부에는 다수의 분사구를 갖는 제1 샤워헤드판 (202)과 제2 샤워헤드판(204)이 일정한 간격으로 배열되어 활성화 산소를 균일하게 뿌려주는 이중샤워헤드(200)가 위치한다. 또한, 상기 이중샤워헤드(200)의 하부에는 기판(116)을 지지하는 지지대(118)를 포함하는 제2 반응실(114)을 구비하여 기판을 처리하는 장치를 이루고 있다. Referring to FIG. 3, the transparent shielding film is installed on the upper part of the
한편, 본 발명에 의한 기판의 처리방법은 자외선이 기판(116)에 다다르지 않아야 하므로, 이중샤워헤드(200)는 자외선에 대하여 불투명해야 하고, 제1 샤워헤드판(202)의 제1 분사구(206)와 제2 샤워헤드판(204)의 제2 분사구(208)는 서로 엇갈리게 배치되는 것이 바람직하다.On the other hand, since the ultraviolet light should not reach the
이어서, 활성화 산소를 균일하게 뿌려주는 샤워헤드를 살펴보기로 한다. Next, the showerhead which sprays activated oxygen uniformly will be described.
도 4는 본 발명의 실시예에 따른 활성화 산소를 분사하는 이중샤워헤드(200)를 설명하기 위한 평면도이다. 4 is a plan view for explaining a dual shower head 200 for injecting activated oxygen according to an embodiment of the present invention.
도 4를 참조하면, 상기 이중샤워헤드(200)는 수직선분(가는 실선으로 표시됨)인 b1b2, b3b4 등과 수평선분(가는 실선으로 표시됨)인 a
1a2, a3a4 등의 교차점에 활성화 산소가 통과될 수 있는 제1 분사구(206)가 형성된 제1 샤워헤드판(202)과, 수직선분(가는 점선으로 표시됨)인 b1'b2', b3'b4' 등과 수평선분(가는 점선으로 표시됨)인 a1'a2', a3'a4' 등의 교차점에 제2 분사구(208)가 형성된 제2 샤워헤드판 (204)으로 나뉜다. 한편, 제1 샤워헤드판(202)과 제2 샤워헤드판(204)은 자외선이 투과되지 않도록 불투명해야 한다. 또한, 제1 분사구(206)와 상기 제2 분사구(208)는 제1 반응실(110)에서 제2 반응실(114)을 향해 내리 쬐는 자외선을 통과시키지 않도록 상호 일직선상에 놓여 있지 않아야 한다. 또한, 이중샤워헤드(200)에 형성된 분사구 사이의 간격은 공정별 또는 제품별로 다양하게 설정할 수 있으며, 통상 0.5㎝ 내지 5.0㎝인 것이 바람직하나 반드시 이에 한정되는 것은 아니다. 그리고 이중샤워헤드(200)에 형성된 분사구의 직경도 다양하게 설정할수 있으며, 통상 0.5㎜ 내지 5.0㎜인 것이 바람직하나 반드시 이에 한정하는 것은 아니다. 덧붙여, 이중샤워헤드(200)의 형상은 하우징(100)의 형상에 따라 달라질 수 있다. Referring to FIG. 4, the dual shower head 200 has a vertical line segment (indicated by a thin solid line) b 1 b 2 , b 3 b 4 and a horizontal line segment (indicated by a thin solid line) a 1 a 2 , a 3 a
마지막으로, 산화막 증착 또는 열처리과정을 구체적으로 살펴보면, 오존생성기(106)에서 생성된 오존은 제1 반응실(110)에서 자외선에 의해 산소 기체와 활성화 산소로 분해된다. 이어서, 활성화된 산소는 다수의 분사구가 형성된 이중샤워헤드(200)를 통과하여 지지대(118)에 안착되어 있는 기판(116)에 뿌려진다. 결과적으로, 기판에 뿌려진 활성화 산소는 기판에 산화막을 증착하기도 하고 이미 증착된 산화막을 치밀화시키기도 한다. Finally, when the oxide film deposition or heat treatment process in detail, the ozone generated in the
이상 본 발명을 상세히 설명하였으나, 본 발명은 상기한 실시예에 한정되지 않고 당업자에 의해 많은 변형 및 개량이 가능하다. 예컨대, 자외선이 기판(116)에 다다르지 않게 하는 방법을 이중샤워헤드를 이용하는 것으로 설명하였지만, 제2 반응실(114)을 자외선이 닿지 않도록 이격되게 설치함으로써도 가능하다.Although the present invention has been described in detail above, the present invention is not limited to the above embodiments, and many modifications and improvements can be made by those skilled in the art. For example, a method of preventing ultraviolet rays from reaching the
상술한 본 발명에 의한 기판의 처리장치 및 처리방법에 따르면, 활성화 산소 이용하여 반도체 기판 상에 산화막을 증착 또는 열처리할 때에 불투명한 이중샤워헤드를 이용함으로써, 자외선이 반도체 기판에 닿지 않고 또한 불균일한 오존의 분해에 의해서 영향을 받지 않게 되므로 기판에 형성되는 산화막의 두께가 달라지는 것을 방지할 수 있다.According to the processing apparatus and processing method of the substrate according to the present invention described above, by using an opaque dual shower head when depositing or heat-treating an oxide film on a semiconductor substrate using activated oxygen, ultraviolet light does not reach the semiconductor substrate and is uneven. Since it is not affected by the decomposition of ozone, it is possible to prevent the thickness of the oxide film formed on the substrate from changing.
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