US20100140221A1 - Plasma etching apparatus and plasma cleaning method - Google Patents
Plasma etching apparatus and plasma cleaning method Download PDFInfo
- Publication number
- US20100140221A1 US20100140221A1 US12/630,155 US63015509A US2010140221A1 US 20100140221 A1 US20100140221 A1 US 20100140221A1 US 63015509 A US63015509 A US 63015509A US 2010140221 A1 US2010140221 A1 US 2010140221A1
- Authority
- US
- United States
- Prior art keywords
- high frequency
- plasma
- frequency power
- cleaning
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Definitions
- the present invention relates to a capacitively coupled plasma etching apparatus for performing a dry etching process on a target object by using a plasma and a plasma cleaning method for cleaning the inside of a processing chamber the plasma etching apparatus.
- a plasma is widely used in a process such as etching, deposit, oxidation, sputtering or the like since it has a good reactivity with a processing gas in a relatively low temperature.
- a capacitively coupled type is mainly used to generate a plasma.
- An upper and a lower electrode are arranged in parallel with each other in a vacuum processing chamber included in a capacitively coupled plasma etching apparatus. Then, a target substrate (e.g., a semiconductor wafer or a glass substrate) is mounted on the lower electrode and a high frequency voltage is applied between the upper and the lower electrode. Accordingly, an electric field is generated between the electrodes by the high frequency voltage to accelerate electrons and, thus, the impact ionization occurs between the accelerated electrons and a processing gas, thereby generating a plasma. Then, a surface of the substrate is subjected to a desired etching process by radicals and ions in the plasma.
- a target substrate e.g., a semiconductor wafer or a glass substrate
- the electrode to which the high frequency voltage is applied is connected to a high frequency power supply via a blocking capacitor included in a matching unit, the electrode serves as a cathode.
- a cathode coupling type in which a high frequency voltage is applied to a lower electrode as a cathode on which a substrate is mounted, ions in a plasma are attracted to the substrate in a substantial vertical direction, thereby performing an anisotropic etching with the outstanding directivity (see, e.g., Japanese Patent Application Publication No. 2000-260595).
- the capacitively coupled plasma etching apparatus it is required to control the temperature of a substrate to be uniform by suppressing the increase of the temperature of the substrate caused by the heat transferred from the plasma during the plasma etching.
- the substrate is indirectly cooled by supplying a coolant having an adjusted temperature from a chiller unit to a coolant path provided inside the lower electrode to be circulated and a heat transfer gas such as He gas to a backside of the substrate through the lower electrode.
- a substrate holding unit is required to fixedly hold the substrate on the lower electrode against the supplying pressure of the heat transfer gas and, thus, an electrostatic chuck is mainly used as the substrate holding unit (see, e.g., Japanese Patent Laid-open Publication No. 2001-210705).
- the electrostatic chuck includes a dielectric layer having a DC electrode therein which is provided on an upper surface (mounting surface) of the lower electrode and a preset DC voltage is applied to the DC electrode to attract a substrate by a Coulomb force generated between the substrate and the dielectric layer.
- the dielectric layer has recently been made of alumina ceramic (Al 2 O 3 ) having high plasma resistance and high heat resistance.
- some of gaseous reaction products or by-products produced during the plasma etching are attached to members inside the chamber, especially, an upper electrode, a focus ring, a sidewall of the chamber and the like, which face a plasma generation space or a processing space, to be solidified into deposits.
- a cleaning process is regularly performed to remove the deposits from the members in the chamber.
- Such kinds of cleaning processes are classified into two groups, i.e., a gas cleaning performed by a thermal decomposition of gas and a plasma cleaning performed by decomposing a cleaning gas by a plasma.
- a high frequency voltage for plasma generation is applied to the lower electrode as in the dry etching process.
- the second high frequency voltage for ion attraction is not applied and only the first high frequency for plasma generation is applied to the lower electrode.
- the cycle of the regular plasma cleaning is may be carried out lot by lot. However, it is preferable that the cycle is carried sheet by sheet to reliably prevent the influence of deposits on the process.
- a (dielectric) top surface portion of the electrostatic chuck is slightly eroded by an ion sputtering effect. Accordingly, as the plasma cleaning is repeatedly performed, such erosion is progressed, shortening the lifespan of the electrostatic chuck.
- the dielectric portion of the electrostatic chuck is made of a metal, especially, e.g., alumina ceramic (Al 2 O 3 )
- the aluminum is scattered as particles or compounds (e.g., Al fluoride or Al chloride) in the chamber due to the erosion and some of the particles or the compounds is remain without being not exhausted. Such particles or compounds are attached to a substrate subjected to the etching process, thereby causing the metal contamination.
- a deposition creating process is performed by supplying a film formation gas, e.g., SiCl 4 gas, to the chamber after the plasma cleaning to coat the surface of the electrostatic chuck with a thin film made of SiCl x O y or the like in the conventional capacitively coupled plasma etching apparatus.
- a film formation gas e.g., SiCl 4 gas
- the present invention provides a plasma etching apparatus and a plasma cleaning method capable of preventing erosion of an electrostatic chuck provided at an electrode to which a high frequency voltage is applied and on which a target object is mounted while ensuring a sufficient performance of a cleaning process performed in a processing chamber, to thereby increase a lifespan of the electrostatic chuck and suppress or prevent metal contamination.
- a plasma etching apparatus including an evacuable processing chamber; a first electrode for mounting a target object in the processing chamber; an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal; a second electrode disposed to face the first electrode in parallel in the processing chamber; an etching gas supply unit for supplying an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object; a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object; a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or the cleaning gas; and a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a
- a plasma cleaning method for performing a plasma cleaning in an evacuable processing chamber without a target object in a plasma etching apparatus.
- the plasma etching apparatus includes the evacuable processing chamber; a first electrode for mounting a target object in the processing chamber; an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal; a second electrode disposed to face the first electrode in parallel in the processing chamber; an etching gas supply unit configured to supply an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object; a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object; and a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or
- FIG. 1 shows a schematic configuration of a plasma etching apparatus in accordance with an embodiment of the present invention
- FIG. 2 shows characteristics of time/high frequency power magnitude of a pulse plasma
- FIG. 3 shows a waveform of a first high frequency power of the pulse plasma shown in FIG. 2 ;
- FIGS. 4A to 4C are cross sectional views showing a process order of a trimming process
- FIG. 5 is a table in which trimming characteristics obtained through test examples of a trimming process for the effects of the embodiment of the present invention.
- FIGS. 6A and 6B show waveforms of a sequence of plasma cleaning depending on sequence types in accordance with the embodiment of the present invention.
- FIG. 1 shows a schematic configuration of a plasma etching apparatus in accordance with an embodiment of the present invention.
- the plasma etching apparatus is of a capacitively coupled type where dual high frequency powers are applied to a lower electrode, and includes a cylindrical chamber (processing chamber) 10 made of a metal, e.g., aluminum, stainless steel or the like.
- the chamber 10 is frame-grounded.
- a cylindrical susceptor 12 serving as a lower electrode is provided to mount a target object (target substrate) thereon.
- the susceptor 12 which is made of, e.g., aluminum, is supported by an insulating tubular support 14 , which is in turn supported by a cylindrical support portion 16 vertically upwardly extending from a bottom portion of the chamber 10 .
- a focus ring 18 made of, e.g., quartz or silicon is arranged on an upper surface of the tubular support 14 to annularly surround a top surface of the susceptor 12 .
- An exhaust path 20 is formed between a sidewall of the chamber 10 and the cylindrical support portion 16 .
- An annular baffle plate 22 is attached to the entrance or the inside of the exhaust path 20 , and an exhaust port 24 is provided at a bottom portion of the chamber 10 .
- An exhaust device 28 is connected to the exhaust port 24 via an exhaust pipe 26 .
- the exhaust device 28 includes a vacuum pump to evacuate a processing space in the chamber 10 to a predetermined vacuum level.
- Attached to the sidewall of the chamber 10 is a gate valve 30 for opening and closing a gateway through which a semiconductor wafer W is loaded and unloaded.
- a first high frequency power supply 32 for plasma generation is electrically connected to the susceptor 12 via a first matching unit (MU) 34 and a power feed rod 36 .
- a first high frequency power HF is supplied from the first high frequency power supply 32 to the susceptor 12 .
- the first high frequency power HF has a frequency (e.g., about 100 MHz) adequate to gas discharge.
- a shower head 38 serving as an upper electrode of ground potential. The first high frequency power HF from the first high frequency power supply 32 is capacitively applied between the susceptor 12 and the shower head 38 .
- a second high frequency power supply 80 for ion attraction is electrically connected to the susceptor 12 via a second matching unit (MU) 82 and the power feed rod 36 .
- a second high frequency power LF is supplied from the second high frequency power supply 80 to the susceptor 12 .
- the second high frequency power LF has a frequency (e.g., about 13.56 MHz) adequate to attract ions or control an ion energy.
- An electrostatic chuck 40 is provided on an upper surface of the susceptor 12 to hold the silicon wafer W by an electrostatic attraction force.
- the electrostatic chuck 40 includes a DC electrode 40 a made of a conductive film and an upper and a lower dielectric layer 40 b and 40 c .
- the DC electrode 40 a is interposed between the dielectric layers 40 b and 40 c .
- a DC power supply 42 is electrically connected to the electrode 40 a via a switch 43 . By applying a DC voltage from the DC power supply 42 to the DC electrode 40 a , a semiconductor wafer W can be attracted to and held on the electrostatic chuck 40 by the Coulomb force.
- Each of the dielectric layers 40 b and 40 c of the electrostatic chuck 40 is made of, e.g., alumina ceramic (Al 2 O 3 )
- a heater 84 for controlling a wafer temperature is provided inside the lower dielectric layer 40 c .
- the heater 84 includes a resistance heating wire having, e.g., a spiral shape and is electrically connected to a heater power supply 88 arranged outside the chamber 10 through an electrical cable 86 .
- the dielectric layers 40 b and 40 c of the electrostatic chuck 40 made of alumina ceramic (Al 2 O 3 ) having a high heat resistance, are endurable for the heat emitted from the heater 84 .
- a coolant path 44 which extends in, e.g., a circumferential direction, is provided inside the susceptor 12 .
- a coolant e.g., a cooling water
- a heat transfer gas e.g., He gas
- a heat transfer gas supply unit 52 is supplied from a heat transfer gas supply unit 52 to a space between a top surface of the electrostatic chuck 40 and a bottom surface of the semiconductor wafer W through a gas supply line 54 .
- the shower head 38 provided at the ceiling portion of the chamber 10 includes a lower electrode plate 56 having a plurality of gas injection holes 56 a and an electrode holder 58 that detachably holds the electrode plate 56 .
- a buffer chamber 60 for radically diffusing a gas to make the pressure uniform.
- a gas inlet opening 60 a of the buffer chamber 60 is connected to an etching gas supply unit 66 and a cleaning gas supply unit 68 through gas supply lines 62 and 64 , respectively.
- On-off valves 70 and 72 are provided in the gas supply lines 62 and 64 , respectively.
- Mass flow controllers (not shown) are provided in the etching gas and cleaning gas supply unit 66 and 68 , respectively.
- a magnet unit 74 Provided along a circumference of the chamber 10 is a magnet unit 74 extending annularly or concentrically around the chamber 10 .
- an RF electric field is vertically produced in the processing space between the shower head 38 and the susceptor 12 .
- a high density plasma is generated near the surface of the susceptor 12 by gas discharge generated by applying the first high frequency power HF to the susceptor 12 .
- a controller 76 controls operations of various parts of the plasma etching apparatus, e.g., the exhaust device 28 , the first high frequency power supply 32 , the second high frequency power supply 80 , the first matching unit 34 , the second matching unit 82 , the switch 43 for the electrostatic chuck 40 , the chiller unit 46 , the heat transfer gas supply unit 52 , the etching gas supply unit 66 , the cleaning gas supply unit 68 , the on-off valves 70 and 72 , and the like.
- the controller 76 is connected to a host computer (not shown) and the like.
- the gate valve 30 is opened first, and a target object, i.e., a semiconductor wafer W, is loaded in the chamber 10 and mounted on the electrostatic chuck 40 . Then, the on-off valve 70 of the gas supply line 62 is opened and an etching gas (e.g., a gaseous mixture) is supplied from the etching gas supply unit 66 to the chamber at a predetermined flow rate and flow rate ratio. Moreover, the pressure inside the chamber 10 is adjusted by the exhaust device 28 at a preset level.
- a target object i.e., a semiconductor wafer W
- the first high frequency power HF having a preset level is supplied from the first high frequency power supply 32 to the susceptor 12 and the second high frequency power LH having a preset level is supplied from the second high frequency power supply 80 to the susceptor 12 .
- He gas as a heat transfer gas is supplied from heat transfer supply unit 52 to a gap between the surface of the electrostatic chuck 40 and the bottom surface of the semiconductor wafer W.
- a DC voltage is applied to the DC power supply 42 to the DC electrode 40 a of the electrostatic chuck 40 and the heat transfer gas is kept in a contact interface between the semiconductor wafer W and the electrostatic chuck 40 by an electrostatic attraction force.
- the heater power supply 88 is turned on to supply a power (e.g., an AC power) to the heater 84 of the electrostatic chuck 40 .
- a power e.g., an AC power
- the etching gas injected from the shower head 38 is converted to a plasma by a high frequency discharge generated between the shower head 38 serving as the upper electrode and the susceptor 12 serving as the lower electrode by the first high frequency power HF.
- a main surface of the semiconductor W is etched in a desired pattern by radicals and/or ions produced from the plasma.
- a high density plasma in a desirable dissociation state can be obtained by supplying to the susceptor 12 the first high frequency power HF having a relatively high frequency of about 100 MHz adequate for plasma generation. That is, a high-density plasma can be generated in a lower-pressure condition.
- an anisotropic etching with high selectivity can be performed on the semiconductor wafer W mounted on the susceptor 12 by supplying to the susceptor the second high frequency power LF having a relatively lower frequency of about 13.56 MHz adequate for ion attraction.
- the temperature of the semiconductor wafer W is controlled by providing the susceptor 12 or the electrostatic chuck 40 a with a cool heat from the chiller unit 46 and a heat from the heater 84 simultaneously. Accordingly, it is possible to perform temperature conversion or increase and decrease of the temperature at a high speed and also optionally or variously control the profile of temperature distribution.
- polymers e.g., fluorocarbon based polymers
- polymers produced by the radicals and/or ions in the plasma of the etching gas reacting with a material of an etching mask or a film to be etched, and/or particles, sputtered from the surface of the semiconductor wafer W, are not completely exhausted through the exhaust device 28 and some of the polymers or particles remain in the chamber 10 , thereby being attached to members included in the chamber 10 , e.g., the sidewall of the chamber 10 , the electrode plate 56 of the shower head 38 , the focus ring 18 , the baffle plate 22 of the exhaust path 20 and the like, which face the processing space.
- members included in the chamber 10 e.g., the sidewall of the chamber 10 , the electrode plate 56 of the shower head 38 , the focus ring 18 , the baffle plate 22 of the exhaust path 20 and the like, which face the processing space.
- the semiconductor wafer W is mounted on the electrostatic chuck 40 and, thus, the electrostatic chuck 40 is not exposed to the plasma. Accordingly, no deposits are attached to the surface of the electrostatic chuck 40 .
- the cleaning process is regularly performed lot by lot preferably or sheet by sheet more preferably. Specifically, in the sheet-by-sheet cleaning process, immediately after the dry etching process is completed for one sheet, the processed semiconductor wafer W is unloaded from the chamber 10 . Then, the plasma cleaning is performed in the chamber 10 in which no semiconductor wafer W is present.
- the plasma cleaning is performed in the chamber 10 in which no semiconductor wafer W is present.
- the controller 76 controls various parts of the plasma etching apparatus to perform the plasma cleaning process of the present embodiment. Specifically, the gate valve 30 is closed and, thus, the chamber 10 is sealed off. Then, the on-off valve 72 of the gas supply line 64 is opened and a cleaning gas (e.g., a gaseous mixture) is supplied from the cleaning gas supply unit 68 to the chamber 10 at a predetermined flow rate and flow rate ratio and the pressure inside the chamber 10 is adjusted by the exhaust device 28 at a preset level. Further, the first high frequency power HF that is pulse-modulated as will be described later is supplied from the first high frequency power supply 32 to the susceptor 12 .
- a cleaning gas e.g., a gaseous mixture
- a gaseous mixture in which a fluorine based gas, e.g., SF 6 gas, and O 2 gas are mixed can be adequately employed as the cleaning gas.
- the number of the F atoms generated in the plasma of the SF 6 gas is several times more than those of other fluorine based gases. Accordingly, it is possible to etch deposits (especially, Si compounds) at a high speed.
- another fluorine based gas e.g., NF 3 gas may be adequately employed.
- the O 2 gas serves as an additive gas to suppress a polymerization reaction and accelerate the cleaning process.
- a ratio of the O 2 gas to the fluorine based gas (e.g., the SF 6 gas and the NF 3 gas) is preferably about 1:1.
- the second high frequency power supply 80 for ion attraction is turned off. Moreover, since no semiconductor wafer W is provided on the electrostatic chuck 40 , it is unnecessary to control the wafer temperature and the switch 43 for the DC voltage application and the heat transfer gas supply unit 52 are tuned off. However, it is necessary to control the temperatures of the electrostatic chuck 40 and the susceptor 12 , so that the chiller unit 46 and the heater power supply 88 may be turned on.
- the controller 76 controls the first high frequency power supply and the first matching unit 34 such that a plasma generation state and a plasma non-generation state can be alternately repeated by alternately repeating at a specific cycle a first period during which the first high frequency power HF has a first amplitude or a first crest value (i.e., an effective power) that generates the plasma and during which the first high frequency power HF has a second period having a second amplitude or a second crest value (i.e., no effective power) that generates substantially no plasma.
- the second amplitude is set as about 0 (i.e., no first high frequency power is supplied).
- the first high frequency power HF supplied from the first high frequency power supply 32 to the susceptor 12 is modulated.
- FIG. 2 shows the modulation of pulse as a typical example of a modulated magnitude of a high frequency power.
- periods A are in the plasma generation state and periods B are in the plasma non-generation state.
- the first high frequency power HF having the first amplitude of, e.g., about 750 W by power conversion is supplied to the susceptor 12 .
- the first high frequency power HF having the second amplitude of, e.g., about 0 W by power conversion is supplied to the susceptor 12 . That is, a so-called pulse plasma is generated in the chamber 10 by alternately repeating on and off of the first high frequency power HF.
- a percentage (%) of on period to one cycle of on and off period is referred to as a duty
- the waveform of the first high frequency power HF is shown in FIG. 3 .
- the second amplitude of the plasma non-generation state be about 0 W.
- the first high frequency power HF can have as the second amplitude value any amplitude value that generates substantially no plasma.
- the present embodiment is not limited to 750 W.
- the first amplitude value can be set in a range of 400 W to 4000 W by the power conversion depending on the conditions of the cleaning process.
- a frequency at which the first amplitude (on period) and the second amplitude (off period) are alternately repeated is preferably sufficiently lower than that (e.g., about 27 MHz or more) of the first high frequency power HF.
- the modulation frequency is 1 kHz to 100 kHz and preferably 1 kHz to 60 kHz. If the modulation frequency is lower than 1 kHz, the ion-sputter suppressing effect of the present invention is significantly lowered.
- the modulation frequency is higher than about 60 kHz, it becomes difficult to allow the pulse plasma to follow on and off of the first high frequency power HF, thereby significantly lowering the ion-sputter suppressing effect of the present invention.
- the duty of the first amplitude (on period) is not limited to 50% and it is preferable to adequately set the duty in a range of 10% to 60%. If the duty is smaller than 10%, no plasma is generated, thereby failing to obtain an effective plasma cleaning. On the other hand, if the duty is higher than 60%, the ion-sputter suppressing effect of the present invention is significantly lowered.
- the duty and the cleaning time are in an inverse proportional relationship to each other. Accordingly, as the duty is greater, a needed time for the cleaning is shortened. As the duty is smaller, the needed time is lengthened.
- main conditions of the plasma cleaning are as follows.
- the cleaning rate of 100 ⁇ /min to 250 ⁇ /min was obtained at each position in the radical direction on a surface of the electrode plate 56 of the shower head 38 .
- the cleaning rate of 100 ⁇ /min to 150 ⁇ /min was obtained at each position in the radical direction.
- the cleaning rate of 25 ⁇ /min to 50 ⁇ /min was obtained at each position in the vertical direction.
- the cleaning rate is rarely changed when the magnitude of the first amplitude of the first high frequency power HF is increased to two times, i.e., 1500 W.
- the cleaning rate is lowered substantially in proportion to the duty as compared with the plasma cleaning without the pulse modulation.
- the pulse-modulated plasma cleaning in accordance with the present embodiment can obtain the same cleaning result or the same cleaning performance as the plasma cleaning without the pulse modulation by setting the cleaning time slightly longer depending on the duty of pulse modulation (in the inverse proportional relationship).
- the pulse-modulated plasma cleaning in accordance with the present embodiment has a main feature that it is possible to sufficiently suppress the erosion of a surface layer portion, i.e., the upper dielectric layer 40 b of the electrostatic chuck 40 .
- the cleaning gas is discharged to generate a plasma in the processing space between the susceptor (lower electrode) 12 and the shower head (upper electrode) 38 . Further, a negative self-bias voltage is generated in the susceptor 12 , so that an ion sheath is formed between the susceptor 12 and the plasma. Then, and positive ions in the plasma are accelerated by an electric field of the ion sheath to be incident on the upper dielectric layer 40 b of the electrostatic chuck 40 .
- the alumina ceramic (Al 2 O 3 ) as the material of the upper dielectric layer 40 b has a sufficiently strong etching resistance against radicals of fluorine, oxygen and the like, but the aluminum or the ceramic (Al 2 O 3 ) has a relatively weaker etching resistance to physical etching (ion sputtering) caused by the ion incidence. As a result, the upper dielectric layer 40 b made of the alumina ceramic (Al 2 O 3 ) is inevitably eroded.
- the ion sputtering can be suppressed.
- Such action of suppressing the ion sputtering by the pulse modulation has the same effect as in the case of applying the above pulse modulation in the dry etching process for the semiconductor wafer W. This can be proved in a trimming process of resist pattern, for example.
- a sidewall of the resist pattern 100 is formed by the photolithography.
- a trimming process forms the sidewall of the resist pattern 100 into a finer pattern as shown in FIG. 4B .
- a target etching film 104 is etched by using the thinly formed resist pattern 100 as a mask, a hole or recess 108 having a desired size can be obtained as shown in FIG. 4C .
- a reference number 102 is an antireflection coating and a reference number 106 is a base film or a base substrate.
- the attempt to form a resist pattern having a desired thin size without the trimming process may cause resist collapse during the photolithography process (especially, development).
- the trimming process is performed to make the resist pattern to have a desired thin size.
- the sidewall of the resist pattern 100 is horizontally etched and an upper surface of the resist pattern 100 is vertically etched.
- a radical based etching mainly dominantly contributes to the horizontal etching (trimming) of the resist pattern 100 and an ion based etching mainly dominantly contributes to the vertical etching (resist loss).
- Diameter of semiconductor wafer 300 mm
- Modulation Frequency 10 kHz and 100 kHz
- FIG. 5 is a table where trimming characteristics obtained in test examples 1 to 3 and SEM pictures are illustrated.
- the non-modulation (CW) trimming process was carried out for 20 seconds by using a first high frequency power HF of 70 W.
- a vertical etching rate i.e., a resist loss rate (PR loss) was 40.2 nm and a horizontal etching rate, i.e., a trimming amount (Trim. amount) was 45.1 nm.
- a trimming ratio (Trim. Ratio) was 45.1 nm/40.2 nm, i.e., 1.12.
- the resist loss rate (PR loss) was 35.6 nm and the trimming amount (Trim. amount) was 39.8 nm.
- the trimming ratio (Trim. ratio) was 1.12.
- the same pulse-modulation trimming process as the plasma cleaning of the present embodiment was carried out for 26 seconds by using the first high frequency power HF having the magnitude (magnitude of on period or first amplitude) of 70 W.
- the resist loss rate (PR loss) was 37.5 nm and the trimming amount (Trim. amount) was 53.7 nm.
- the trimming ratio (Trim. ratio) was 1.43.
- the resist loss rate (PR loss) was 32.9 nm and the trimming amount (Trim. amount) was 48.4 nm.
- the trimming ratio (Trim. ratio) was 1.47.
- the same pulse-modulation trimming process as the plasma cleaning of the present embodiment was carried out for 26 seconds by using the first high frequency power HF having the magnitude (magnitude of on period or first amplitude) of 85 W.
- the resist loss rate (PR loss) was 38.2 nm and the trimming amount (Trim. amount) was 47.7 nm.
- the trimming ratio (Trim. ratio) was 1.24.
- the resist loss rate (PR loss) was 32.2 nm and the trimming amount (Trim. amount) was 47.7 nm.
- the trimming ratio (Trim. ratio) was 1.48.
- the non-modulation (CW) test example 1 is compared with the pulse-modulation test examples 2 and 3, it can be seen that the radical based etching rate (trimming amount) of the non-modulation (CW) method is not significantly different from that of the pulse-modulation method. However, the ion based etching rate (resist loss rate) of the pulse-modulation method is much lower than that of the non-modulation (CW) method.
- the pulse-modulation method yields little effect on the radical based etching but suppress an etching rate of the ion based etching.
- the pulse-modulation method is not limited to the trimming process and is adequate for a plasma etching in which the radical etching and the ion based etching are carried out together.
- the alumina ceramic (Al 2 O 3 ) as the material of the upper dielectric layer 40 b has a sufficiently strong etching resistance against radicals of fluorine, oxygen and the like, but has a relatively weaker etching resistance to physical etching (ion sputtering) caused by the ion incidence.
- the erosion of the upper dielectric layer 40 b of the electrostatic chuck 40 is inevitably reduced.
- the amount of the aluminum attached to each semiconductor wafer W as the target object can be controlled within an allowable range, thereby preventing the metal contamination.
- the plasma cleaning method of the present embodiment it is possible to generate a pulse plasma for cleaning in the chamber 10 in which no semiconductor wafer W is provided by pulse-modulating a high frequency power HF for plasma generation supplied to the susceptor 12 at a predetermined modulation frequency or duty, thereby maintaining the cleaning performance, and effectively efficiently suppress the erosion of a surface layer portion of the electrostatic chuck 40 . Accordingly, it is possible to maintain the inside of the chamber 10 as a non-deposit state and increase the lifespan of the electrostatic chuck 40 . As a result, the metal contamination can be suppressed or prevented.
- a first type shown in FIG. 6A or a second type shown in FIG. 6B can be employed as a sequence of the plasma cleaning.
- the first period A and the second period B are alternately repeated at a desired cycle C between a start point of time t s and an end point of time t e of the cleaning.
- the first amplitude of the first high frequency power HF is maintained during a period of time T s between a start point of time t s when the first high frequency power HF is started to be supplied to the susceptor 12 and a point of time t c ; and the first period A and the second period B are alternately repeated in the first high frequency power HF at the cycle C after the point of time t c .
- the period of time T s or the point of time t c may be determined depending on various conditions. For example, when the increase in the plasma generation is not sufficient because the duty of pulse modulation is relatively small, a point of time when the plasma is initially ignited after the cleaning is started may be monitored by a plasma monitor to be set the monitored point of time as the point of time t c ; or the period of time T s may be determined as an empirically obtained period of time required until the plasma becomes stable.
- the cleaning time may be divided into a first cleaning time for performing a rough cleaning and a second cleaning time for performing a finishing cleaning to determine the period of time T s (between t s and t c ) as the first cleaning time and a remaining period of time (between t c and t e ) as the second cleaning time.
- the plasma etching apparatus and the plasma cleaning method of the present embodiment it is possible to obtain a sufficient performance of the cleaning process in the processing chamber and prevent erosion of the electrostatic chuck provided at the electrode to which a high frequency voltage is applied and on which a target object is mounted. Accordingly, a lifespan of the electrostatic chuck is increased, and the metal contamination is suppressed or prevented.
- the present embodiment is adequately applicable to a capacitively coupled plasma etching apparatus of lower side single frequency application type in which a high frequency power for plasma generation and ion attraction is supplied to a susceptor (lower electrode).
- the material of the surface layer portion of the electrostatic chuck is not limited to alumina ceramic (Al 2 O 3 )
- the surface layer portion of the electrostatic chuck may be made of a dielectric material including a metal.
- the target substrate is not limited to the semiconductor wafer.
- the present invention can be applied to various substrates for plat panel display, photomasks, CD substrates, print substrates, and the like.
Abstract
A plasma etching apparatus includes an electrostatic chuck and an etching gas supply unit for supplying an etching gas to a processing space between a first and a second electrode to perform a dry etching process on the target object. The apparatus further includes a cleaning gas supply unit for supplying a cleaning gas to a processing space; a first high frequency power supply unit for supplying a first high frequency power to the first electrode; and a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle when the plasma cleaning is performed in the processing chamber without the target object.
Description
- This application claims priority to Japanese Patent Application No. 2008-313100 filed on Dec. 9, 2008, the entire contents of which are incorporated herein by reference.
- The present invention relates to a capacitively coupled plasma etching apparatus for performing a dry etching process on a target object by using a plasma and a plasma cleaning method for cleaning the inside of a processing chamber the plasma etching apparatus.
- In the manufacturing process of a semiconductor device or a flat panel display (FPD), a plasma is widely used in a process such as etching, deposit, oxidation, sputtering or the like since it has a good reactivity with a processing gas in a relatively low temperature. In a single wafer plasma etching apparatus, a capacitively coupled type is mainly used to generate a plasma.
- An upper and a lower electrode are arranged in parallel with each other in a vacuum processing chamber included in a capacitively coupled plasma etching apparatus. Then, a target substrate (e.g., a semiconductor wafer or a glass substrate) is mounted on the lower electrode and a high frequency voltage is applied between the upper and the lower electrode. Accordingly, an electric field is generated between the electrodes by the high frequency voltage to accelerate electrons and, thus, the impact ionization occurs between the accelerated electrons and a processing gas, thereby generating a plasma. Then, a surface of the substrate is subjected to a desired etching process by radicals and ions in the plasma.
- Here, since the electrode to which the high frequency voltage is applied is connected to a high frequency power supply via a blocking capacitor included in a matching unit, the electrode serves as a cathode. In a cathode coupling type in which a high frequency voltage is applied to a lower electrode as a cathode on which a substrate is mounted, ions in a plasma are attracted to the substrate in a substantial vertical direction, thereby performing an anisotropic etching with the outstanding directivity (see, e.g., Japanese Patent Application Publication No. 2000-260595).
- Recently, in order to individually optimize the density of plasma and the selectivity of anisotropic etching, there has widely been employed a lower side dual frequency application type in which a first high frequency voltage having a relatively high frequency (e.g., 27 MHz or more) adequate for plasma generation and a second high frequency voltage having a relatively low frequency (e.g., 13.56 MHz or less) adequate for ion attraction are overlappingly applied to a lower electrode on which a substrate is mounted (see, e.g., Japanese Patent Application Publication No. 2000-156370 and corresponding U.S. Pat. No. 6,642,149 B2).
- Moreover, in the capacitively coupled plasma etching apparatus, it is required to control the temperature of a substrate to be uniform by suppressing the increase of the temperature of the substrate caused by the heat transferred from the plasma during the plasma etching. To that end, the substrate is indirectly cooled by supplying a coolant having an adjusted temperature from a chiller unit to a coolant path provided inside the lower electrode to be circulated and a heat transfer gas such as He gas to a backside of the substrate through the lower electrode.
- According to such a cooling method, a substrate holding unit is required to fixedly hold the substrate on the lower electrode against the supplying pressure of the heat transfer gas and, thus, an electrostatic chuck is mainly used as the substrate holding unit (see, e.g., Japanese Patent Laid-open Publication No. 2001-210705).
- Typically, the electrostatic chuck includes a dielectric layer having a DC electrode therein which is provided on an upper surface (mounting surface) of the lower electrode and a preset DC voltage is applied to the DC electrode to attract a substrate by a Coulomb force generated between the substrate and the dielectric layer. For the electrostatic chuck, the dielectric layer has recently been made of alumina ceramic (Al2O3) having high plasma resistance and high heat resistance.
- Meanwhile, in the capacitively coupled plasma etching apparatus, some of gaseous reaction products or by-products produced during the plasma etching are attached to members inside the chamber, especially, an upper electrode, a focus ring, a sidewall of the chamber and the like, which face a plasma generation space or a processing space, to be solidified into deposits.
- As such, if the deposits attached to the members in the chamber are detached therefrom by being, e.g., peeled off, particles are generated, thereby decreasing the yield of devices. Accordingly, a cleaning process is regularly performed to remove the deposits from the members in the chamber. Such kinds of cleaning processes are classified into two groups, i.e., a gas cleaning performed by a thermal decomposition of gas and a plasma cleaning performed by decomposing a cleaning gas by a plasma.
- When the plasma cleaning is performed, in the cathode coupling type, a high frequency voltage for plasma generation is applied to the lower electrode as in the dry etching process. In the lower side dual frequency application type, the second high frequency voltage for ion attraction is not applied and only the first high frequency for plasma generation is applied to the lower electrode. The cycle of the regular plasma cleaning is may be carried out lot by lot. However, it is preferable that the cycle is carried sheet by sheet to reliably prevent the influence of deposits on the process.
- However, in the conventional capacitively coupled plasma etching apparatus, whenever the plasma cleaning is performed, a (dielectric) top surface portion of the electrostatic chuck is slightly eroded by an ion sputtering effect. Accordingly, as the plasma cleaning is repeatedly performed, such erosion is progressed, shortening the lifespan of the electrostatic chuck. Furthermore, when the dielectric portion of the electrostatic chuck is made of a metal, especially, e.g., alumina ceramic (Al2O3), the aluminum is scattered as particles or compounds (e.g., Al fluoride or Al chloride) in the chamber due to the erosion and some of the particles or the compounds is remain without being not exhausted. Such particles or compounds are attached to a substrate subjected to the etching process, thereby causing the metal contamination.
- In addition, when the plasma cleaning is performed, only the high frequency voltage for the plasma generation is applied to the lower electrode. Nevertheless, a self bias voltage is unavoidably generated and an ion sheath is formed between the plasma and the lower electrode. Accordingly, ions in the plasma are accelerated by an electric field inside the ion sheath to be incident on the (dielectric) top surface portion of the electrostatic chuck, causing the dielectric material to sputter.
- To prevent the metal contamination caused by the electrostatic chuck, a deposition creating process is performed by supplying a film formation gas, e.g., SiCl4 gas, to the chamber after the plasma cleaning to coat the surface of the electrostatic chuck with a thin film made of SiClxOy or the like in the conventional capacitively coupled plasma etching apparatus. However, such a method requires expensive equipment such as gas structure for the depositing process and a prolonged post-processing, so that it is difficult to use the method.
- In view of the above, the present invention provides a plasma etching apparatus and a plasma cleaning method capable of preventing erosion of an electrostatic chuck provided at an electrode to which a high frequency voltage is applied and on which a target object is mounted while ensuring a sufficient performance of a cleaning process performed in a processing chamber, to thereby increase a lifespan of the electrostatic chuck and suppress or prevent metal contamination.
- In accordance with an aspect of the present invention, there is provided a plasma etching apparatus including an evacuable processing chamber; a first electrode for mounting a target object in the processing chamber; an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal; a second electrode disposed to face the first electrode in parallel in the processing chamber; an etching gas supply unit for supplying an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object; a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object; a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or the cleaning gas; and a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle when the plasma cleaning is performed in the processing chamber without the target object.
- In accordance with another aspect of the present invention, there is provided a plasma cleaning method for performing a plasma cleaning in an evacuable processing chamber without a target object in a plasma etching apparatus. The plasma etching apparatus includes the evacuable processing chamber; a first electrode for mounting a target object in the processing chamber; an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal; a second electrode disposed to face the first electrode in parallel in the processing chamber; an etching gas supply unit configured to supply an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object; a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object; and a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or the cleaning gas. A first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle.
- The objects and features of the present invention will become apparent from the following description of embodiments, given in conjunction with the accompanying drawings, in which:
-
FIG. 1 shows a schematic configuration of a plasma etching apparatus in accordance with an embodiment of the present invention; -
FIG. 2 shows characteristics of time/high frequency power magnitude of a pulse plasma; -
FIG. 3 shows a waveform of a first high frequency power of the pulse plasma shown inFIG. 2 ; -
FIGS. 4A to 4C are cross sectional views showing a process order of a trimming process; -
FIG. 5 is a table in which trimming characteristics obtained through test examples of a trimming process for the effects of the embodiment of the present invention; and -
FIGS. 6A and 6B show waveforms of a sequence of plasma cleaning depending on sequence types in accordance with the embodiment of the present invention. - Embodiments of the present invention will now be described with reference to the accompanying drawings which form a part hereof.
-
FIG. 1 shows a schematic configuration of a plasma etching apparatus in accordance with an embodiment of the present invention. The plasma etching apparatus is of a capacitively coupled type where dual high frequency powers are applied to a lower electrode, and includes a cylindrical chamber (processing chamber) 10 made of a metal, e.g., aluminum, stainless steel or the like. Thechamber 10 is frame-grounded. - In the
chamber 10, acylindrical susceptor 12 serving as a lower electrode is provided to mount a target object (target substrate) thereon. Thesusceptor 12, which is made of, e.g., aluminum, is supported by an insulatingtubular support 14, which is in turn supported by acylindrical support portion 16 vertically upwardly extending from a bottom portion of thechamber 10. Afocus ring 18 made of, e.g., quartz or silicon is arranged on an upper surface of thetubular support 14 to annularly surround a top surface of thesusceptor 12. - An
exhaust path 20 is formed between a sidewall of thechamber 10 and thecylindrical support portion 16. Anannular baffle plate 22 is attached to the entrance or the inside of theexhaust path 20, and anexhaust port 24 is provided at a bottom portion of thechamber 10. Anexhaust device 28 is connected to theexhaust port 24 via anexhaust pipe 26. Theexhaust device 28 includes a vacuum pump to evacuate a processing space in thechamber 10 to a predetermined vacuum level. Attached to the sidewall of thechamber 10 is agate valve 30 for opening and closing a gateway through which a semiconductor wafer W is loaded and unloaded. - A first high
frequency power supply 32 for plasma generation is electrically connected to thesusceptor 12 via a first matching unit (MU) 34 and apower feed rod 36. A first high frequency power HF is supplied from the first highfrequency power supply 32 to thesusceptor 12. The first high frequency power HF has a frequency (e.g., about 100 MHz) adequate to gas discharge. Moreover, provided at a ceiling portion of thechamber 10 is ashower head 38 serving as an upper electrode of ground potential. The first high frequency power HF from the first highfrequency power supply 32 is capacitively applied between the susceptor 12 and theshower head 38. - Similarly, a second high
frequency power supply 80 for ion attraction is electrically connected to thesusceptor 12 via a second matching unit (MU) 82 and thepower feed rod 36. A second high frequency power LF is supplied from the second highfrequency power supply 80 to thesusceptor 12. The second high frequency power LF has a frequency (e.g., about 13.56 MHz) adequate to attract ions or control an ion energy. - An
electrostatic chuck 40 is provided on an upper surface of thesusceptor 12 to hold the silicon wafer W by an electrostatic attraction force. Theelectrostatic chuck 40 includes aDC electrode 40 a made of a conductive film and an upper and a lowerdielectric layer DC electrode 40 a is interposed between thedielectric layers DC power supply 42 is electrically connected to theelectrode 40 a via aswitch 43. By applying a DC voltage from theDC power supply 42 to theDC electrode 40 a, a semiconductor wafer W can be attracted to and held on theelectrostatic chuck 40 by the Coulomb force. - Each of the
dielectric layers electrostatic chuck 40 is made of, e.g., alumina ceramic (Al2O3) In this embodiment, aheater 84 for controlling a wafer temperature is provided inside the lowerdielectric layer 40 c. Theheater 84 includes a resistance heating wire having, e.g., a spiral shape and is electrically connected to aheater power supply 88 arranged outside thechamber 10 through anelectrical cable 86. The dielectric layers 40 b and 40 c of theelectrostatic chuck 40 made of alumina ceramic (Al2O3) having a high heat resistance, are endurable for the heat emitted from theheater 84. - A
coolant path 44, which extends in, e.g., a circumferential direction, is provided inside thesusceptor 12. A coolant, e.g., a cooling water, of a predetermined temperature is supplied from achiller unit 46 to thecoolant path 44 viapipelines electrostatic chuck 40 by adjusting the temperature of the coolant. Moreover, a heat transfer gas, e.g., He gas, is supplied from a heat transfergas supply unit 52 to a space between a top surface of theelectrostatic chuck 40 and a bottom surface of the semiconductor wafer W through agas supply line 54. - The
shower head 38 provided at the ceiling portion of thechamber 10 includes alower electrode plate 56 having a plurality of gas injection holes 56 a and anelectrode holder 58 that detachably holds theelectrode plate 56. Provided inside theelectrode holder 58 is abuffer chamber 60 for radically diffusing a gas to make the pressure uniform. - A gas inlet opening 60 a of the
buffer chamber 60 is connected to an etchinggas supply unit 66 and a cleaninggas supply unit 68 throughgas supply lines valves gas supply lines gas supply unit - Provided along a circumference of the
chamber 10 is amagnet unit 74 extending annularly or concentrically around thechamber 10. When a plasma process is performed in thechamber 10, an RF electric field is vertically produced in the processing space between theshower head 38 and thesusceptor 12. A high density plasma is generated near the surface of thesusceptor 12 by gas discharge generated by applying the first high frequency power HF to thesusceptor 12. - A
controller 76 controls operations of various parts of the plasma etching apparatus, e.g., theexhaust device 28, the first highfrequency power supply 32, the second highfrequency power supply 80, thefirst matching unit 34, thesecond matching unit 82, theswitch 43 for theelectrostatic chuck 40, thechiller unit 46, the heat transfergas supply unit 52, the etchinggas supply unit 66, the cleaninggas supply unit 68, the on-offvalves controller 76 is connected to a host computer (not shown) and the like. - In the plasma etching apparatus, in order to perform the dry etching, the
gate valve 30 is opened first, and a target object, i.e., a semiconductor wafer W, is loaded in thechamber 10 and mounted on theelectrostatic chuck 40. Then, the on-offvalve 70 of thegas supply line 62 is opened and an etching gas (e.g., a gaseous mixture) is supplied from the etchinggas supply unit 66 to the chamber at a predetermined flow rate and flow rate ratio. Moreover, the pressure inside thechamber 10 is adjusted by theexhaust device 28 at a preset level. - Further, the first high frequency power HF having a preset level is supplied from the first high
frequency power supply 32 to thesusceptor 12 and the second high frequency power LH having a preset level is supplied from the second highfrequency power supply 80 to thesusceptor 12. Moreover, He gas as a heat transfer gas is supplied from heattransfer supply unit 52 to a gap between the surface of theelectrostatic chuck 40 and the bottom surface of the semiconductor wafer W. Then, a DC voltage is applied to theDC power supply 42 to theDC electrode 40 a of theelectrostatic chuck 40 and the heat transfer gas is kept in a contact interface between the semiconductor wafer W and theelectrostatic chuck 40 by an electrostatic attraction force. - In the meantime, the
heater power supply 88 is turned on to supply a power (e.g., an AC power) to theheater 84 of theelectrostatic chuck 40. The etching gas injected from theshower head 38 is converted to a plasma by a high frequency discharge generated between theshower head 38 serving as the upper electrode and thesusceptor 12 serving as the lower electrode by the first high frequency power HF. A main surface of the semiconductor W is etched in a desired pattern by radicals and/or ions produced from the plasma. - In the capacitively coupled plasma etching apparatus, a high density plasma in a desirable dissociation state can be obtained by supplying to the
susceptor 12 the first high frequency power HF having a relatively high frequency of about 100 MHz adequate for plasma generation. That is, a high-density plasma can be generated in a lower-pressure condition. At the same time, an anisotropic etching with high selectivity can be performed on the semiconductor wafer W mounted on thesusceptor 12 by supplying to the susceptor the second high frequency power LF having a relatively lower frequency of about 13.56 MHz adequate for ion attraction. - Further, in the capacitively coupled plasma etching apparatus, the temperature of the semiconductor wafer W is controlled by providing the
susceptor 12 or theelectrostatic chuck 40 a with a cool heat from thechiller unit 46 and a heat from theheater 84 simultaneously. Accordingly, it is possible to perform temperature conversion or increase and decrease of the temperature at a high speed and also optionally or variously control the profile of temperature distribution. - In the dry etching process, polymers (e.g., fluorocarbon based polymers), produced by the radicals and/or ions in the plasma of the etching gas reacting with a material of an etching mask or a film to be etched, and/or particles, sputtered from the surface of the semiconductor wafer W, are not completely exhausted through the
exhaust device 28 and some of the polymers or particles remain in thechamber 10, thereby being attached to members included in thechamber 10, e.g., the sidewall of thechamber 10, theelectrode plate 56 of theshower head 38, thefocus ring 18, thebaffle plate 22 of theexhaust path 20 and the like, which face the processing space. - However, during the dry etching process, the semiconductor wafer W is mounted on the
electrostatic chuck 40 and, thus, theelectrostatic chuck 40 is not exposed to the plasma. Accordingly, no deposits are attached to the surface of theelectrostatic chuck 40. - In this embodiment, to promptly remove deposits incidentally attached to the members included in the chamber (excluding the electrostatic chuck 40) during the dry etching process, the cleaning process is regularly performed lot by lot preferably or sheet by sheet more preferably. Specifically, in the sheet-by-sheet cleaning process, immediately after the dry etching process is completed for one sheet, the processed semiconductor wafer W is unloaded from the
chamber 10. Then, the plasma cleaning is performed in thechamber 10 in which no semiconductor wafer W is present. - In the lot-by-lot cleaning process, after the dry etching process is performed many times (e.g., 25 times) for one lot (e.g., 25 sheets) of semiconductor wafers W, the plasma cleaning is performed in the
chamber 10 in which no semiconductor wafer W is present. - The
controller 76 controls various parts of the plasma etching apparatus to perform the plasma cleaning process of the present embodiment. Specifically, thegate valve 30 is closed and, thus, thechamber 10 is sealed off. Then, the on-offvalve 72 of thegas supply line 64 is opened and a cleaning gas (e.g., a gaseous mixture) is supplied from the cleaninggas supply unit 68 to thechamber 10 at a predetermined flow rate and flow rate ratio and the pressure inside thechamber 10 is adjusted by theexhaust device 28 at a preset level. Further, the first high frequency power HF that is pulse-modulated as will be described later is supplied from the first highfrequency power supply 32 to thesusceptor 12. - Here, a gaseous mixture in which a fluorine based gas, e.g., SF6 gas, and O2 gas are mixed can be adequately employed as the cleaning gas. The number of the F atoms generated in the plasma of the SF6 gas is several times more than those of other fluorine based gases. Accordingly, it is possible to etch deposits (especially, Si compounds) at a high speed. Of course, another fluorine based gas, e.g., NF3 gas may be adequately employed. The O2 gas serves as an additive gas to suppress a polymerization reaction and accelerate the cleaning process. A ratio of the O2 gas to the fluorine based gas (e.g., the SF6 gas and the NF3 gas) is preferably about 1:1.
- In accordance with this embodiment, when the plasma cleaning is performed, the second high
frequency power supply 80 for ion attraction is turned off. Moreover, since no semiconductor wafer W is provided on theelectrostatic chuck 40, it is unnecessary to control the wafer temperature and theswitch 43 for the DC voltage application and the heat transfergas supply unit 52 are tuned off. However, it is necessary to control the temperatures of theelectrostatic chuck 40 and thesusceptor 12, so that thechiller unit 46 and theheater power supply 88 may be turned on. - In this embodiment, during the plasma cleaning, the
controller 76 controls the first high frequency power supply and thefirst matching unit 34 such that a plasma generation state and a plasma non-generation state can be alternately repeated by alternately repeating at a specific cycle a first period during which the first high frequency power HF has a first amplitude or a first crest value (i.e., an effective power) that generates the plasma and during which the first high frequency power HF has a second period having a second amplitude or a second crest value (i.e., no effective power) that generates substantially no plasma. Further, in this embodiment, the second amplitude is set as about 0 (i.e., no first high frequency power is supplied). In more detail, the first high frequency power HF supplied from the first highfrequency power supply 32 to thesusceptor 12 is modulated.FIG. 2 shows the modulation of pulse as a typical example of a modulated magnitude of a high frequency power. - As shown in
FIG. 2 , periods A are in the plasma generation state and periods B are in the plasma non-generation state. In the periods A during which a plasma is generated, the first high frequency power HF having the first amplitude of, e.g., about 750 W by power conversion is supplied to thesusceptor 12. In the periods B during which no plasma is generated, the first high frequency power HF having the second amplitude of, e.g., about 0 W by power conversion is supplied to thesusceptor 12. That is, a so-called pulse plasma is generated in thechamber 10 by alternately repeating on and off of the first high frequency power HF. - If a percentage (%) of on period to one cycle of on and off period is referred to as a duty, the duty is represented as 100A %/(A=B). For example, the duty of 50% may be selected by setting A=B. In this case, the waveform of the first high frequency power HF is shown in
FIG. 3 . - In addition, it is not necessary that the second amplitude of the plasma non-generation state be about 0 W. The first high frequency power HF can have as the second amplitude value any amplitude value that generates substantially no plasma. Similarly, even though the first amplitude of the plasma generation state is about 750 W by the power conversion, the present embodiment is not limited to 750 W. The first amplitude value can be set in a range of 400 W to 4000 W by the power conversion depending on the conditions of the cleaning process.
- For the pulse modulation in accordance with this embodiment, a frequency at which the first amplitude (on period) and the second amplitude (off period) are alternately repeated is preferably sufficiently lower than that (e.g., about 27 MHz or more) of the first high frequency power HF. Typically, the modulation frequency is 1 kHz to 100 kHz and preferably 1 kHz to 60 kHz. If the modulation frequency is lower than 1 kHz, the ion-sputter suppressing effect of the present invention is significantly lowered.
- Moreover, if the modulation frequency is higher than about 60 kHz, it becomes difficult to allow the pulse plasma to follow on and off of the first high frequency power HF, thereby significantly lowering the ion-sputter suppressing effect of the present invention.
- The duty of the first amplitude (on period) is not limited to 50% and it is preferable to adequately set the duty in a range of 10% to 60%. If the duty is smaller than 10%, no plasma is generated, thereby failing to obtain an effective plasma cleaning. On the other hand, if the duty is higher than 60%, the ion-sputter suppressing effect of the present invention is significantly lowered.
- Generally, in view of the cleaning effect, the duty and the cleaning time are in an inverse proportional relationship to each other. Accordingly, as the duty is greater, a needed time for the cleaning is shortened. As the duty is smaller, the needed time is lengthened.
- For an experiment for the cleaning process of this embodiment, main conditions of the plasma cleaning are as follows.
- Etching gas: SF6 gas/O2 gas=800 sccm/800 sccm
- Chamber pressure: 200 mTorr
- HF power: first amplitude/second amplitude=750 W/0 W
- Modulation Frequency: 10 kHz
- Duty: 50%
- Temperature: upper electrode/sidewall of chamber/lower electrode=80/70/60° C.
- Magnetic field: 320 G
- Cleaning time: 40 seconds
- In the experiment, it can be seen that the cleaning rate of 100 Å/min to 250 Å/min was obtained at each position in the radical direction on a surface of the
electrode plate 56 of theshower head 38. On a surface of thefocus ring 18, the cleaning rate of 100 Å/min to 150 Å/min was obtained at each position in the radical direction. Moreover, on a sidewall of thechamber 10, the cleaning rate of 25 Å/min to 50 Å/min was obtained at each position in the vertical direction. - In the experiment, it can be seen that the cleaning rate of each part was about a half times as fast as that when the duty is 100% without change of other conditions (i.e., no pulse modulation).
- Moreover, in the experiment, it can be seen that the cleaning rate is rarely changed when the magnitude of the first amplitude of the first high frequency power HF is increased to two times, i.e., 1500 W.
- As a result, for the cleaning performance of the pulse-modulated plasma cleaning in accordance with the present embodiment, the cleaning rate is lowered substantially in proportion to the duty as compared with the plasma cleaning without the pulse modulation. However, when viewed from another aspect, the pulse-modulated plasma cleaning in accordance with the present embodiment can obtain the same cleaning result or the same cleaning performance as the plasma cleaning without the pulse modulation by setting the cleaning time slightly longer depending on the duty of pulse modulation (in the inverse proportional relationship).
- In fact, the pulse-modulated plasma cleaning in accordance with the present embodiment has a main feature that it is possible to sufficiently suppress the erosion of a surface layer portion, i.e., the
upper dielectric layer 40 b of theelectrostatic chuck 40. - In other words, in the plasma cleaning, if the first high frequency power HF for plasma generation is supplied to the
susceptor 12, the cleaning gas is discharged to generate a plasma in the processing space between the susceptor (lower electrode) 12 and the shower head (upper electrode) 38. Further, a negative self-bias voltage is generated in thesusceptor 12, so that an ion sheath is formed between the susceptor 12 and the plasma. Then, and positive ions in the plasma are accelerated by an electric field of the ion sheath to be incident on theupper dielectric layer 40 b of theelectrostatic chuck 40. - The alumina ceramic (Al2O3) as the material of the
upper dielectric layer 40 b has a sufficiently strong etching resistance against radicals of fluorine, oxygen and the like, but the aluminum or the ceramic (Al2O3) has a relatively weaker etching resistance to physical etching (ion sputtering) caused by the ion incidence. As a result, theupper dielectric layer 40 b made of the alumina ceramic (Al2O3) is inevitably eroded. - Here, if the first high frequency power HF is pulse-modulated, in the second period B during which the first high frequency power HF has the second amplitude in each cycle of modulation frequency, at least no self-bias voltage exist and the ion sputtering is stopped in the
upper dielectric layer 40 b of theelectrostatic chuck 40. Accordingly, the ion sputtering can be suppressed. - Such action of suppressing the ion sputtering by the pulse modulation has the same effect as in the case of applying the above pulse modulation in the dry etching process for the semiconductor wafer W. This can be proved in a trimming process of resist pattern, for example.
- As shown in
FIG. 4A , a sidewall of the resistpattern 100 is formed by the photolithography. Typically, a trimming process forms the sidewall of the resistpattern 100 into a finer pattern as shown inFIG. 4B . If atarget etching film 104 is etched by using the thinly formed resistpattern 100 as a mask, a hole orrecess 108 having a desired size can be obtained as shown inFIG. 4C . InFIGS. 4A to 4C , areference number 102 is an antireflection coating and areference number 106 is a base film or a base substrate. - In the resist process, the attempt to form a resist pattern having a desired thin size without the trimming process may cause resist collapse during the photolithography process (especially, development). To that end, after the photolithography process, the trimming process is performed to make the resist pattern to have a desired thin size.
- However, in the trimming process, the sidewall of the resist
pattern 100 is horizontally etched and an upper surface of the resistpattern 100 is vertically etched. Here, a radical based etching mainly dominantly contributes to the horizontal etching (trimming) of the resistpattern 100 and an ion based etching mainly dominantly contributes to the vertical etching (resist loss). - Accordingly, to proof the effect of the present invention, it is meaningful to compare a typical non-modulation (continuous wave (CW)) method with a pulse-modulation method in the trimming process in view of the radical based etching and the ion based etching.
- From the above point of view, the comparison of the typical non-modulation (CW) method with the pulse-modulation method was performed through an experiment of the trimming process by using the capacitively coupled plasma etching apparatus (shown in
FIG. 1 ). In the experiment of the trimming process, main conditions are as follows. - Diameter of semiconductor wafer: 300 mm
- Etching gas: O2 gas/N2 gas=50 sccm/50 sccm
- Chamber pressure: 50 mTorr
- HF power: first amplitude/second amplitude=70 W, 80 w/0 w
- Modulation Frequency: 10 kHz and 100 kHz
- Duty: 50%
- Temperature: upper electrode/sidewall of chamber/lower electrode=80/70/60° C.
- Magnetic field: 320 G
- Cleaning time: 20 to 26 seconds
-
FIG. 5 is a table where trimming characteristics obtained in test examples 1 to 3 and SEM pictures are illustrated. - The non-modulation (CW) trimming process was carried out for 20 seconds by using a first high frequency power HF of 70 W. At a central portion of a semiconductor wafer, a vertical etching rate, i.e., a resist loss rate (PR loss) was 40.2 nm and a horizontal etching rate, i.e., a trimming amount (Trim. amount) was 45.1 nm. A trimming ratio (Trim. Ratio) was 45.1 nm/40.2 nm, i.e., 1.12. At an edge portion of the semiconductor, the resist loss rate (PR loss) was 35.6 nm and the trimming amount (Trim. amount) was 39.8 nm. The trimming ratio (Trim. ratio) was 1.12.
- The same pulse-modulation trimming process as the plasma cleaning of the present embodiment was carried out for 26 seconds by using the first high frequency power HF having the magnitude (magnitude of on period or first amplitude) of 70 W. At the central portion, the resist loss rate (PR loss) was 37.5 nm and the trimming amount (Trim. amount) was 53.7 nm. The trimming ratio (Trim. ratio) was 1.43. At the edge portion, the resist loss rate (PR loss) was 32.9 nm and the trimming amount (Trim. amount) was 48.4 nm. The trimming ratio (Trim. ratio) was 1.47.
- The same pulse-modulation trimming process as the plasma cleaning of the present embodiment was carried out for 26 seconds by using the first high frequency power HF having the magnitude (magnitude of on period or first amplitude) of 85 W. At the central portion, the resist loss rate (PR loss) was 38.2 nm and the trimming amount (Trim. amount) was 47.7 nm. The trimming ratio (Trim. ratio) was 1.24. At the edge portion, the resist loss rate (PR loss) was 32.2 nm and the trimming amount (Trim. amount) was 47.7 nm. The trimming ratio (Trim. ratio) was 1.48.
- As described above, if the non-modulation (CW) test example 1 is compared with the pulse-modulation test examples 2 and 3, it can be seen that the radical based etching rate (trimming amount) of the non-modulation (CW) method is not significantly different from that of the pulse-modulation method. However, the ion based etching rate (resist loss rate) of the pulse-modulation method is much lower than that of the non-modulation (CW) method.
- In other words, by turning on and off the first high frequency power HF contributing to the plasma generation at the adequate modulation frequency and duty, the pulse-modulation method yields little effect on the radical based etching but suppress an etching rate of the ion based etching. The pulse-modulation method is not limited to the trimming process and is adequate for a plasma etching in which the radical etching and the ion based etching are carried out together.
- Furthermore, such a principle is important to the plasma cleaning process of the present embodiment. Specifically, as described above, the alumina ceramic (Al2O3) as the material of the
upper dielectric layer 40 b has a sufficiently strong etching resistance against radicals of fluorine, oxygen and the like, but has a relatively weaker etching resistance to physical etching (ion sputtering) caused by the ion incidence. - Accordingly, if the ion sputtering becomes weak under the given conditions, the erosion of the
upper dielectric layer 40 b of theelectrostatic chuck 40 is inevitably reduced. As a result, it is possible to lengthen a lifespan of theelectrostatic chuck 40 and suppress or prevent metal contamination. That is, it is evitable that theupper dielectric layer 40 b of theelectrostatic chuck 40 is eroded by the plasma cleaning process. However, by reducing the erosion level or by making erosion rate as slow as possible, the amount of the aluminum attached to each semiconductor wafer W as the target object can be controlled within an allowable range, thereby preventing the metal contamination. - As such, in accordance with the plasma cleaning method of the present embodiment, it is possible to generate a pulse plasma for cleaning in the
chamber 10 in which no semiconductor wafer W is provided by pulse-modulating a high frequency power HF for plasma generation supplied to thesusceptor 12 at a predetermined modulation frequency or duty, thereby maintaining the cleaning performance, and effectively efficiently suppress the erosion of a surface layer portion of theelectrostatic chuck 40. Accordingly, it is possible to maintain the inside of thechamber 10 as a non-deposit state and increase the lifespan of theelectrostatic chuck 40. As a result, the metal contamination can be suppressed or prevented. - Moreover, in the present embodiment, a first type shown in
FIG. 6A or a second type shown inFIG. 6B can be employed as a sequence of the plasma cleaning. In accordance to the first type, for the first high frequency power HF, the first period A and the second period B are alternately repeated at a desired cycle C between a start point of time ts and an end point of time te of the cleaning. In accordance with the second type, the first amplitude of the first high frequency power HF is maintained during a period of time Ts between a start point of time ts when the first high frequency power HF is started to be supplied to thesusceptor 12 and a point of time tc; and the first period A and the second period B are alternately repeated in the first high frequency power HF at the cycle C after the point of time tc. - In the second type, the period of time Ts or the point of time tc may be determined depending on various conditions. For example, when the increase in the plasma generation is not sufficient because the duty of pulse modulation is relatively small, a point of time when the plasma is initially ignited after the cleaning is started may be monitored by a plasma monitor to be set the monitored point of time as the point of time tc; or the period of time Ts may be determined as an empirically obtained period of time required until the plasma becomes stable.
- In addition, to arbitrarily control a balance between the cleaning efficiency and the erosion suppressing effect, the cleaning time may be divided into a first cleaning time for performing a rough cleaning and a second cleaning time for performing a finishing cleaning to determine the period of time Ts (between ts and tc) as the first cleaning time and a remaining period of time (between tc and te) as the second cleaning time.
- In accordance with the plasma etching apparatus and the plasma cleaning method of the present embodiment, it is possible to obtain a sufficient performance of the cleaning process in the processing chamber and prevent erosion of the electrostatic chuck provided at the electrode to which a high frequency voltage is applied and on which a target object is mounted. Accordingly, a lifespan of the electrostatic chuck is increased, and the metal contamination is suppressed or prevented.
- While the invention has been shown and described with respect to the embodiments, it will be understood by those skilled in the art that various changes and modification may be made without departing from the scope of the invention as defined in the following claims.
- For example, the present embodiment is adequately applicable to a capacitively coupled plasma etching apparatus of lower side single frequency application type in which a high frequency power for plasma generation and ion attraction is supplied to a susceptor (lower electrode). Moreover, the material of the surface layer portion of the electrostatic chuck is not limited to alumina ceramic (Al2O3) Alternatively, the surface layer portion of the electrostatic chuck may be made of a dielectric material including a metal.
- In the present invention, the target substrate is not limited to the semiconductor wafer. Alternatively, the present invention can be applied to various substrates for plat panel display, photomasks, CD substrates, print substrates, and the like.
Claims (26)
1. A plasma etching apparatus comprising:
an evacuable processing chamber;
a first electrode for mounting a target object in the processing chamber;
an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal;
a second electrode disposed to face the first electrode in parallel in the processing chamber;
an etching gas supply unit for supplying an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object;
a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object;
a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or the cleaning gas; and
a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle when the plasma cleaning is performed in the processing chamber without the target object.
2. The apparatus of claim 1 , wherein the dielectric material of the surface layer portion of the electrostatic chuck includes Al2O3.
3. The apparatus of claim 1 , wherein the second amplitude is zero.
4. The apparatus of claim 1 , wherein a frequency at which the first and the second period are alternately repeated is about 1 kHz to 60 kHz.
5. The apparatus of claim 1 , wherein a duty of the first period is about 10% to 60%.
6. The apparatus of claim 1 , wherein, during the plasma cleaning, the controller controls the first high frequency power supply unit such that the first high frequency power continuously has the first amplitude between a point of time when the first high frequency power is started to be supplied to the first electrode and a point of time when the plasma is ignited; and the first period and the second period are alternately repeated at the specific cycle after the point of time when the plasma is ignited.
7. The apparatus of claim 1 , wherein, during the plasma cleaning, the controller controls the first high frequency power supply unit such that the first high frequency power continuously has the first amplitude until a discharge of the cleaning gas becomes stable; and the first period and the second period are alternately repeated at the specific cycle after the discharge of the cleaning gas becomes stable.
8. The apparatus of claim 1 , wherein a plasma cleaning time set for the plasma cleaning is divided into a first and a second cleaning time; and the controller controls the first high frequency power supply unit such that the first high frequency power continuously has the first amplitude during the first cleaning time and the first period and the second period are alternately repeated at the specific cycle during the second cleaning time.
9. The apparatus of claim 1 , wherein the controller controls the first high frequency power supply unit such that the first period and the second period are alternately repeated at the specific cycle between a start and an end point of a plasma cleaning time set for the plasma cleaning.
10. The apparatus of claim 1 , wherein the cleaning gas is a gaseous mixture in which SF6 gas or NF3 gas and O2 gas are mixed.
11. The apparatus of claim 10 , wherein a mixing ratio of the O2 gas to the SF6 gas or the NF3 gas is about 1.
12. The apparatus of claim 1 , wherein the plasma cleaning is regularly performed in lot by lot or sheet by sheet.
13. The apparatus of claim 1 , further comprising: a second high frequency power supply unit for supplying to the first electrode a second high frequency power for controlling an energy of ions attracted to the target object from the plasma of the etching gas during the dry etching process.
14. The apparatus of claim 13 , wherein, when the plasma cleaning is performed in the processing chamber without the target object, the controller controls the second high frequency power supply unit not to supply the second high frequency power to the first electrode.
15. A plasma cleaning method for performing a plasma cleaning in an evacuable processing chamber without a target object in a plasma etching apparatus including:
the evacuable processing chamber;
a first electrode for mounting a target object in the processing chamber;
an electrostatic chuck provided on a mounting surface of the first electrode to hold the target object by an electrostatic force, a dielectric material of a surface layer portion of the electrostatic chuck including a metal;
a second electrode disposed to face the first electrode in parallel in the processing chamber;
an etching gas supply unit configured to supply an etching gas to a processing space between the first and the second electrode to perform a dry etching process on the target object;
a cleaning gas supply unit for supplying a cleaning gas to the processing space to perform a plasma cleaning in the processing chamber without the target object; and
a first high frequency power supply unit for supplying a first high frequency power to the first electrode, the first high frequency power contributing to plasma generation of the etching gas or the cleaning gas,
wherein a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle.
16. The method of claim 15 , wherein the dielectric material of the surface layer portion of the electrostatic chuck includes Al2O3.
17. The method of claim 15 , wherein the second amplitude is zero.
18. The method of claim 15 , wherein a frequency at which the first and the second period are alternately repeated is about 1 kHz to 60 kHz.
19. The method of claim 15 , wherein a duty of the first period is about 10% to 60%.
20. The method of claim 15 , wherein, during the plasma cleaning, the first high frequency power supply unit is controlled such that the first high frequency power continuously has the first amplitude between a point of time when the first high frequency power is started to be supplied to the first electrode and a point of time when the plasma is ignited; and the first period and the second period are alternately repeated at the specific cycle after the point of time when the plasma is ignited.
21. The method of claim 15 , wherein, during the plasma cleaning, the first high frequency power supply unit is controlled such that the first high frequency power continuously has the first amplitude until a discharge of the cleaning gas becomes stable; and the first period and the second period are alternately repeated at the specific cycle after the discharge of the cleaning gas becomes stable.
22. The method of claim 15 , wherein, wherein a plasma cleaning time set for the plasma cleaning is divided into a first and a second cleaning time; and the first high frequency power supply unit is controlled such that the first high frequency power continuously has the first amplitude during the first cleaning time and the first period and the second period are alternately repeated at the specific cycle during the second cleaning time.
23. The method of claim 15 , wherein the first high frequency power supply unit is controlled such that the first period and the second period are alternately repeated at the specific cycle between a start and an end point of a plasma cleaning time set for the plasma cleaning.
24. The method of claim 15 , wherein the cleaning gas is a gaseous mixture in which SF6 gas or NF3 gas and O2 gas are mixed.
25. The method of claim 24 , wherein a mixing ratio of the O2 gas to the SF6 gas or the NF3 gas is about 1.
26. The method of claim 15 , wherein the plasma cleaning is regularly performed lot by lot or sheet by sheet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/035,023 US9659756B2 (en) | 2008-12-09 | 2013-09-24 | Plasma etching apparatus and plasma cleaning method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008313100A JP5390846B2 (en) | 2008-12-09 | 2008-12-09 | Plasma etching apparatus and plasma cleaning method |
JP2008-313100 | 2008-12-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/035,023 Division US9659756B2 (en) | 2008-12-09 | 2013-09-24 | Plasma etching apparatus and plasma cleaning method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100140221A1 true US20100140221A1 (en) | 2010-06-10 |
Family
ID=42229912
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/630,155 Abandoned US20100140221A1 (en) | 2008-12-09 | 2009-12-03 | Plasma etching apparatus and plasma cleaning method |
US14/035,023 Active 2031-12-20 US9659756B2 (en) | 2008-12-09 | 2013-09-24 | Plasma etching apparatus and plasma cleaning method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/035,023 Active 2031-12-20 US9659756B2 (en) | 2008-12-09 | 2013-09-24 | Plasma etching apparatus and plasma cleaning method |
Country Status (2)
Country | Link |
---|---|
US (2) | US20100140221A1 (en) |
JP (1) | JP5390846B2 (en) |
Cited By (338)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090047795A1 (en) * | 2007-08-17 | 2009-02-19 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US20120289049A1 (en) * | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Copper oxide removal techniques |
US20130220547A1 (en) * | 2012-02-14 | 2013-08-29 | Tokyo Electron Limited | Substrate processing apparatus |
US20140158154A1 (en) * | 2012-12-12 | 2014-06-12 | Tokyo Electron Limited | Method of modifying electrostatic chuck and plasma processing apparatus |
US20140262030A1 (en) * | 2013-03-13 | 2014-09-18 | Douglas A. Buchberger, Jr. | Fast response fluid control system |
US20150013908A1 (en) * | 2012-01-23 | 2015-01-15 | Tokyo Electron Limited | Etching apparatus |
US20150056817A1 (en) * | 2013-08-26 | 2015-02-26 | Tokyo Electron Limited | Semiconductor device manufacturing method |
US20150118846A1 (en) * | 2013-10-28 | 2015-04-30 | Asm Ip Holding B.V. | Method For Trimming Carbon-Containing Film At Reduced Trimming Rate |
US20150114930A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US20150123541A1 (en) * | 2013-11-06 | 2015-05-07 | Applied Materials, Inc. | Particle generation suppresspr by dc bias modulation |
US20150170882A1 (en) * | 2013-12-12 | 2015-06-18 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US9073385B2 (en) | 2010-10-08 | 2015-07-07 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing method for substrates |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US9384987B2 (en) | 2012-04-04 | 2016-07-05 | Asm Ip Holding B.V. | Metal oxide protective layer for a semiconductor device |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US9412564B2 (en) | 2013-07-22 | 2016-08-09 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9659756B2 (en) | 2008-12-09 | 2017-05-23 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9891521B2 (en) | 2014-11-19 | 2018-02-13 | Asm Ip Holding B.V. | Method for depositing thin film |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899405B2 (en) | 2014-12-22 | 2018-02-20 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
TWI632606B (en) * | 2014-06-19 | 2018-08-11 | 東京威力科創股份有限公司 | Method of etching an insulating film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
US10249577B2 (en) | 2016-05-17 | 2019-04-02 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10262859B2 (en) | 2016-03-24 | 2019-04-16 | Asm Ip Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US10361201B2 (en) | 2013-09-27 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor structure and device formed using selective epitaxial process |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US20200273683A1 (en) * | 2019-02-27 | 2020-08-27 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US20200402779A1 (en) * | 2017-09-29 | 2020-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process and related device for removing by-product on semiconductor processing chamber sidewalls |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN112259457A (en) * | 2016-07-15 | 2021-01-22 | 东京毅力科创株式会社 | Plasma etching method, plasma etching apparatus, and substrate mounting table |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
CN114899086A (en) * | 2022-05-15 | 2022-08-12 | 安徽森米诺农业科技有限公司 | Method for cleaning polluted impurities of semiconductor wafer |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11956977B2 (en) | 2021-08-31 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9673037B2 (en) | 2011-05-31 | 2017-06-06 | Law Research Corporation | Substrate freeze dry apparatus and method |
KR101575505B1 (en) | 2014-07-21 | 2015-12-07 | 주식회사 스피드터치 | Apparatus for controlling process temperature |
TWI629116B (en) * | 2016-06-28 | 2018-07-11 | 荏原製作所股份有限公司 | Cleaning apparatus, plating apparatus using the same, and cleaning method |
JP6609535B2 (en) * | 2016-09-21 | 2019-11-20 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
US10395884B2 (en) * | 2017-10-10 | 2019-08-27 | Kla-Tencor Corporation | Ruthenium encapsulated photocathode electron emitter |
US11164759B2 (en) | 2018-05-10 | 2021-11-02 | Micron Technology, Inc. | Tools and systems for processing one or more semiconductor devices, and related methods |
JP2022062903A (en) | 2020-10-09 | 2022-04-21 | 東京エレクトロン株式会社 | Cleaning method and protective member |
Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
US5997687A (en) * | 1996-08-23 | 1999-12-07 | Tokyo Electron Limited | Plasma processing apparatus |
US6009828A (en) * | 1995-02-17 | 2000-01-04 | Sharp Kabushiki Kaisha | Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method |
US6074518A (en) * | 1994-04-20 | 2000-06-13 | Tokyo Electron Limited | Plasma processing apparatus |
US6089181A (en) * | 1996-07-23 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6110287A (en) * | 1993-03-31 | 2000-08-29 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US6165376A (en) * | 1997-01-16 | 2000-12-26 | Nissin Electric Co., Ltd. | Work surface treatment method and work surface treatment apparatus |
US6214162B1 (en) * | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
US20010022293A1 (en) * | 1999-12-27 | 2001-09-20 | Kenji Maeda | Plasma processing equipment and plasma processing method using the same |
US6372654B1 (en) * | 1999-04-07 | 2002-04-16 | Nec Corporation | Apparatus for fabricating a semiconductor device and method of doing the same |
US6433297B1 (en) * | 1999-03-19 | 2002-08-13 | Kabushiki Kaisha Toshiba | Plasma processing method and plasma processing apparatus |
US20030007308A1 (en) * | 2000-01-21 | 2003-01-09 | Yoshio Harada | Electrostatic chuck member and method of producing the same |
US6562190B1 (en) * | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
US20040195216A1 (en) * | 2001-08-29 | 2004-10-07 | Strang Eric J. | Apparatus and method for plasma processing |
US20040221958A1 (en) * | 2003-05-06 | 2004-11-11 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
US20040242021A1 (en) * | 2003-05-28 | 2004-12-02 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US20040250954A1 (en) * | 2003-06-12 | 2004-12-16 | Samsung Electronics Co., Ltd. | Plasma chamber |
US20050103441A1 (en) * | 2001-11-14 | 2005-05-19 | Masanobu Honda | Etching method and plasma etching apparatus |
US20050183822A1 (en) * | 2002-04-26 | 2005-08-25 | Tetsuo Ono | Plasma processing method and plasma processing apparatus |
US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
US20060118044A1 (en) * | 2004-12-03 | 2006-06-08 | Shinji Himori | Capacitive coupling plasma processing apparatus |
US20060154472A1 (en) * | 2005-01-13 | 2006-07-13 | Tokyo Electron Limited | Etching method, program, computer readable storage medium and plasma processing apparatus |
US20070181146A1 (en) * | 2000-03-27 | 2007-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Plasma cvd apparatus and dry cleaning method of the same |
US20080026488A1 (en) * | 2006-07-31 | 2008-01-31 | Ibm Corporation | Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current |
US20080106842A1 (en) * | 2006-11-06 | 2008-05-08 | Tokyo Electron Limited | Mounting device, plasma processing apparatus and plasma processing method |
US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
US20090183771A1 (en) * | 2006-06-23 | 2009-07-23 | Hitoshi Sannomiya | Plasma processing apparatus, plasma processing method and photoelectric conversion element |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2598274B2 (en) | 1987-09-14 | 1997-04-09 | 三菱電機株式会社 | Plasma application equipment |
JP2000156370A (en) | 1998-09-16 | 2000-06-06 | Tokyo Electron Ltd | Method of plasma processing |
JP2000260595A (en) | 1999-03-11 | 2000-09-22 | Hitachi Ltd | Plasma treatment apparatus |
JP2001210705A (en) | 2000-01-28 | 2001-08-03 | Toshiba Corp | Electrostatic chuck, treatment equipment and method of manufacturing semiconductor device |
JP2001313284A (en) | 2000-02-21 | 2001-11-09 | Hitachi Ltd | Method and apparatus for plasma processing |
JP3960792B2 (en) | 2001-12-21 | 2007-08-15 | シャープ株式会社 | Plasma CVD apparatus and method for manufacturing amorphous silicon thin film |
JP3927464B2 (en) | 2002-04-26 | 2007-06-06 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
JP4033730B2 (en) * | 2002-07-10 | 2008-01-16 | 東京エレクトロン株式会社 | Substrate mounting table for plasma processing apparatus, plasma processing apparatus, and base for plasma processing apparatus |
JP2006086325A (en) * | 2004-09-16 | 2006-03-30 | Tokyo Electron Ltd | End point detecting method of cleaning |
JP5323303B2 (en) | 2004-12-03 | 2013-10-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
CN100539000C (en) | 2004-12-03 | 2009-09-09 | 东京毅力科创株式会社 | Capacitive coupling plasma processing apparatus |
JP2008004814A (en) * | 2006-06-23 | 2008-01-10 | Sharp Corp | Plasma processing equipment |
JP4245012B2 (en) | 2006-07-13 | 2009-03-25 | 東京エレクトロン株式会社 | Processing apparatus and cleaning method thereof |
JP5192209B2 (en) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | Plasma etching apparatus, plasma etching method, and computer-readable storage medium |
JP4992389B2 (en) * | 2006-11-06 | 2012-08-08 | 東京エレクトロン株式会社 | Mounting apparatus, plasma processing apparatus, and plasma processing method |
JP4469364B2 (en) * | 2006-12-11 | 2010-05-26 | キヤノンアネルバ株式会社 | Insulating film etching equipment |
JP5390846B2 (en) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma cleaning method |
-
2008
- 2008-12-09 JP JP2008313100A patent/JP5390846B2/en active Active
-
2009
- 2009-12-03 US US12/630,155 patent/US20100140221A1/en not_active Abandoned
-
2013
- 2013-09-24 US US14/035,023 patent/US9659756B2/en active Active
Patent Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110287A (en) * | 1993-03-31 | 2000-08-29 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
US6074518A (en) * | 1994-04-20 | 2000-06-13 | Tokyo Electron Limited | Plasma processing apparatus |
US6009828A (en) * | 1995-02-17 | 2000-01-04 | Sharp Kabushiki Kaisha | Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method |
US6089181A (en) * | 1996-07-23 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
US5997687A (en) * | 1996-08-23 | 1999-12-07 | Tokyo Electron Limited | Plasma processing apparatus |
US6214162B1 (en) * | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
US6165376A (en) * | 1997-01-16 | 2000-12-26 | Nissin Electric Co., Ltd. | Work surface treatment method and work surface treatment apparatus |
US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
US6433297B1 (en) * | 1999-03-19 | 2002-08-13 | Kabushiki Kaisha Toshiba | Plasma processing method and plasma processing apparatus |
US6372654B1 (en) * | 1999-04-07 | 2002-04-16 | Nec Corporation | Apparatus for fabricating a semiconductor device and method of doing the same |
US20010022293A1 (en) * | 1999-12-27 | 2001-09-20 | Kenji Maeda | Plasma processing equipment and plasma processing method using the same |
US20030007308A1 (en) * | 2000-01-21 | 2003-01-09 | Yoshio Harada | Electrostatic chuck member and method of producing the same |
US20070181146A1 (en) * | 2000-03-27 | 2007-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Plasma cvd apparatus and dry cleaning method of the same |
US6562190B1 (en) * | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
US20040195216A1 (en) * | 2001-08-29 | 2004-10-07 | Strang Eric J. | Apparatus and method for plasma processing |
US20050103441A1 (en) * | 2001-11-14 | 2005-05-19 | Masanobu Honda | Etching method and plasma etching apparatus |
US20050183822A1 (en) * | 2002-04-26 | 2005-08-25 | Tetsuo Ono | Plasma processing method and plasma processing apparatus |
US20070184562A1 (en) * | 2002-04-26 | 2007-08-09 | Tetsuo Ono | Plasma Processing Method And Plasma Processing Apparatus |
US20040221958A1 (en) * | 2003-05-06 | 2004-11-11 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
US20060216944A1 (en) * | 2003-05-28 | 2006-09-28 | Kraus Philip A | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US20040242021A1 (en) * | 2003-05-28 | 2004-12-02 | Applied Materials, Inc. | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
US20040250954A1 (en) * | 2003-06-12 | 2004-12-16 | Samsung Electronics Co., Ltd. | Plasma chamber |
US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
US20060118044A1 (en) * | 2004-12-03 | 2006-06-08 | Shinji Himori | Capacitive coupling plasma processing apparatus |
US20060154472A1 (en) * | 2005-01-13 | 2006-07-13 | Tokyo Electron Limited | Etching method, program, computer readable storage medium and plasma processing apparatus |
US20090183771A1 (en) * | 2006-06-23 | 2009-07-23 | Hitoshi Sannomiya | Plasma processing apparatus, plasma processing method and photoelectric conversion element |
US20080026488A1 (en) * | 2006-07-31 | 2008-01-31 | Ibm Corporation | Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current |
US20080106842A1 (en) * | 2006-11-06 | 2008-05-08 | Tokyo Electron Limited | Mounting device, plasma processing apparatus and plasma processing method |
US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
Cited By (446)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8703002B2 (en) | 2007-08-17 | 2014-04-22 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US20090047795A1 (en) * | 2007-08-17 | 2009-02-19 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9659756B2 (en) | 2008-12-09 | 2017-05-23 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
US10844486B2 (en) | 2009-04-06 | 2020-11-24 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
US10480072B2 (en) | 2009-04-06 | 2019-11-19 | Asm Ip Holding B.V. | Semiconductor processing reactor and components thereof |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9073385B2 (en) | 2010-10-08 | 2015-07-07 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing method for substrates |
US20120289049A1 (en) * | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Copper oxide removal techniques |
US8758638B2 (en) * | 2011-05-10 | 2014-06-24 | Applied Materials, Inc. | Copper oxide removal techniques |
US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20150013908A1 (en) * | 2012-01-23 | 2015-01-15 | Tokyo Electron Limited | Etching apparatus |
US9691643B2 (en) * | 2012-01-23 | 2017-06-27 | Tokyo Electron Limited | Etching apparatus |
US20130220547A1 (en) * | 2012-02-14 | 2013-08-29 | Tokyo Electron Limited | Substrate processing apparatus |
US9390943B2 (en) * | 2012-02-14 | 2016-07-12 | Tokyo Electron Limited | Substrate processing apparatus |
US9384987B2 (en) | 2012-04-04 | 2016-07-05 | Asm Ip Holding B.V. | Metal oxide protective layer for a semiconductor device |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10566223B2 (en) | 2012-08-28 | 2020-02-18 | Asm Ip Holdings B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10023960B2 (en) | 2012-09-12 | 2018-07-17 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US11501956B2 (en) | 2012-10-12 | 2022-11-15 | Asm Ip Holding B.V. | Semiconductor reaction chamber showerhead |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20140158154A1 (en) * | 2012-12-12 | 2014-06-12 | Tokyo Electron Limited | Method of modifying electrostatic chuck and plasma processing apparatus |
US9558919B2 (en) * | 2012-12-12 | 2017-01-31 | Tokyo Electron Limited | Method of modifying electrostatic chuck and plasma processing apparatus |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US10340125B2 (en) | 2013-03-08 | 2019-07-02 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US10366864B2 (en) | 2013-03-08 | 2019-07-30 | Asm Ip Holding B.V. | Method and system for in-situ formation of intermediate reactive species |
US9916967B2 (en) * | 2013-03-13 | 2018-03-13 | Applied Materials, Inc. | Fast response fluid control system |
US20140262030A1 (en) * | 2013-03-13 | 2014-09-18 | Douglas A. Buchberger, Jr. | Fast response fluid control system |
US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9412564B2 (en) | 2013-07-22 | 2016-08-09 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
CN104425242A (en) * | 2013-08-26 | 2015-03-18 | 东京毅力科创株式会社 | Semiconductor device manufacturing method |
US9082720B2 (en) * | 2013-08-26 | 2015-07-14 | Tokyo Electron Limited | Semiconductor device manufacturing method |
US20150056817A1 (en) * | 2013-08-26 | 2015-02-26 | Tokyo Electron Limited | Semiconductor device manufacturing method |
US10361201B2 (en) | 2013-09-27 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor structure and device formed using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9343308B2 (en) * | 2013-10-28 | 2016-05-17 | Asm Ip Holding B.V. | Method for trimming carbon-containing film at reduced trimming rate |
US20150118846A1 (en) * | 2013-10-28 | 2015-04-30 | Asm Ip Holding B.V. | Method For Trimming Carbon-Containing Film At Reduced Trimming Rate |
US9330891B2 (en) * | 2013-10-31 | 2016-05-03 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
TWI609994B (en) * | 2013-10-31 | 2018-01-01 | Tokyo Electron Ltd | Plasma processing method and plasma processing device |
US20150114930A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US10504697B2 (en) | 2013-11-06 | 2019-12-10 | Applied Materials, Inc. | Particle generation suppresor by DC bias modulation |
US9593421B2 (en) * | 2013-11-06 | 2017-03-14 | Applied Materials, Inc. | Particle generation suppressor by DC bias modulation |
US9892888B2 (en) | 2013-11-06 | 2018-02-13 | Applied Materials, Inc. | Particle generation suppresor by DC bias modulation |
US20150123541A1 (en) * | 2013-11-06 | 2015-05-07 | Applied Materials, Inc. | Particle generation suppresspr by dc bias modulation |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US11315765B2 (en) | 2013-12-12 | 2022-04-26 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US10283328B2 (en) * | 2013-12-12 | 2019-05-07 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US20150170882A1 (en) * | 2013-12-12 | 2015-06-18 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10604847B2 (en) | 2014-03-18 | 2020-03-31 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
TWI632606B (en) * | 2014-06-19 | 2018-08-11 | 東京威力科創股份有限公司 | Method of etching an insulating film |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US10787741B2 (en) | 2014-08-21 | 2020-09-29 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10561975B2 (en) | 2014-10-07 | 2020-02-18 | Asm Ip Holdings B.V. | Variable conductance gas distribution apparatus and method |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9891521B2 (en) | 2014-11-19 | 2018-02-13 | Asm Ip Holding B.V. | Method for depositing thin film |
US10438965B2 (en) | 2014-12-22 | 2019-10-08 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US9899405B2 (en) | 2014-12-22 | 2018-02-20 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US10312129B2 (en) | 2015-09-29 | 2019-06-04 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
US10720322B2 (en) | 2016-02-19 | 2020-07-21 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top surface |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US10262859B2 (en) | 2016-03-24 | 2019-04-16 | Asm Ip Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10851456B2 (en) | 2016-04-21 | 2020-12-01 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10665452B2 (en) | 2016-05-02 | 2020-05-26 | Asm Ip Holdings B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10249577B2 (en) | 2016-05-17 | 2019-04-02 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US10541173B2 (en) | 2016-07-08 | 2020-01-21 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
CN112259457A (en) * | 2016-07-15 | 2021-01-22 | 东京毅力科创株式会社 | Plasma etching method, plasma etching apparatus, and substrate mounting table |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11107676B2 (en) | 2016-07-28 | 2021-08-31 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US10943771B2 (en) | 2016-10-26 | 2021-03-09 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10720331B2 (en) | 2016-11-01 | 2020-07-21 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10644025B2 (en) | 2016-11-07 | 2020-05-05 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10622375B2 (en) | 2016-11-07 | 2020-04-14 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US11396702B2 (en) | 2016-11-15 | 2022-07-26 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11851755B2 (en) | 2016-12-15 | 2023-12-26 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10784102B2 (en) | 2016-12-22 | 2020-09-22 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10468262B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10950432B2 (en) | 2017-04-25 | 2021-03-16 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US20200402779A1 (en) * | 2017-09-29 | 2020-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process and related device for removing by-product on semiconductor processing chamber sidewalls |
US11710622B2 (en) * | 2017-09-29 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process and related device for removing by-product on semiconductor processing chamber sidewalls |
US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
CN111868890B (en) * | 2019-02-27 | 2024-03-22 | 株式会社日立高新技术 | Plasma processing method and plasma processing apparatus |
CN111868890A (en) * | 2019-02-27 | 2020-10-30 | 株式会社日立高新技术 | Plasma processing method and plasma processing apparatus |
US20200273683A1 (en) * | 2019-02-27 | 2020-08-27 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11837494B2 (en) | 2020-03-11 | 2023-12-05 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11956977B2 (en) | 2021-08-31 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN114899086A (en) * | 2022-05-15 | 2022-08-12 | 安徽森米诺农业科技有限公司 | Method for cleaning polluted impurities of semiconductor wafer |
US11952658B2 (en) | 2022-10-24 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
Also Published As
Publication number | Publication date |
---|---|
US9659756B2 (en) | 2017-05-23 |
JP5390846B2 (en) | 2014-01-15 |
US20140020709A1 (en) | 2014-01-23 |
JP2010140944A (en) | 2010-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9659756B2 (en) | Plasma etching apparatus and plasma cleaning method | |
US9972503B2 (en) | Etching method | |
US9034198B2 (en) | Plasma etching method | |
TWI460786B (en) | A plasma processing apparatus, a plasma processing method, and a memory medium | |
US8679358B2 (en) | Plasma etching method and computer-readable storage medium | |
US9478387B2 (en) | Plasma processing apparatus | |
US9852922B2 (en) | Plasma processing method | |
US20120145186A1 (en) | Plasma processing apparatus | |
US9530666B2 (en) | Plasma etching method and plasma etching apparatus | |
US10770268B2 (en) | Plasma processing method and plasma processing apparatus | |
US8545671B2 (en) | Plasma processing method and plasma processing apparatus | |
TWI743123B (en) | Plasma processing method | |
US20100144157A1 (en) | Plasma etching apparatus and method | |
US9818582B2 (en) | Plasma processing method | |
US20060289296A1 (en) | Plasma processing method and high-rate plasma etching apparatus | |
JP2016086046A (en) | Plasma processing method | |
US10233535B2 (en) | Plasma processing apparatus and plasma processing method | |
US20220139719A1 (en) | Etching method and plasma processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TOKYO ELECTRON LIMITED,JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KIKUCHI, TAKAMICHI;REEL/FRAME:023600/0527 Effective date: 20091201 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |