JPH04115531A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPH04115531A JPH04115531A JP23871190A JP23871190A JPH04115531A JP H04115531 A JPH04115531 A JP H04115531A JP 23871190 A JP23871190 A JP 23871190A JP 23871190 A JP23871190 A JP 23871190A JP H04115531 A JPH04115531 A JP H04115531A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- formed
- film
- semiconductor wafer
- out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000012010 growth Effects 0 Title 1
- 239000000126 substances Substances 0 Title 1
- 238000006243 chemical reaction Methods 0 Abstract 1
- 230000000875 corresponding Effects 0 Abstract 1
- 239000010408 films Substances 0 Abstract 4
- 239000007789 gases Substances 0 Abstract 8
- 239000011799 hole materials Substances 0 Abstract 4
- 238000009740 moulding (composite fabrication) Methods 0 Abstract 2
- 239000004065 semiconductor Substances 0 Abstract 3
- 230000001629 suppression Effects 0 Abstract 1
Abstract
PURPOSE: To enable a reactive generated film with a uniform film thickness to be formed on a wafer by providing a throttle for restricting gas at a gas blow-off hole at a position corresponding to a central part of a semiconductor wafer.
CONSTITUTION: A tubular pin 11 is formed in nearly cylindrical shape entirely and its outer diameter is formed to have dimensions for achieving engagement into a large aperture part of a gas blow-out hole 5. Also, this tubular pin 11 is fitted to a gas blow-out hole 5a at a central part of a gas head 4 out of a number of gas blow-out holes 5 which are provided at the gas head 4 and an inner diameter of the pin 11 is changed according to film-forming conditions. Flow of reaction gas which is supplied to a central part of the semiconductor wafer is suppressed by a throttle (tubular pin) and adjusted according to film- forming conditions, a reactive generated film with a uniform film thickness can be formed on a semiconductor wafer.
COPYRIGHT: (C)1992,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23871190A JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23871190A JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04115531A true JPH04115531A (en) | 1992-04-16 |
Family
ID=17034139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23871190A Pending JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04115531A (en) |
Cited By (56)
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| JP2005328021A (en) * | 2004-05-12 | 2005-11-24 | Applied Materials Inc | Plasma uniformity control by gas diffuser hole design |
| JP2006515039A (en) * | 2003-04-16 | 2006-05-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Gas distribution plate assembly for a large area plasma-enhanced chemical vapor deposition |
| US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
| US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
| US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
| US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
| US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
| US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
| US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
| US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
| US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
| US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
| US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9891521B2 (en) | 2014-11-19 | 2018-02-13 | Asm Ip Holding B.V. | Method for depositing thin film |
| US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US9899405B2 (en) | 2014-12-22 | 2018-02-20 | Asm Ip Holding B.V. | Semiconductor device and manufacturing method thereof |
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| US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
| US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
| US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
| US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
| US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| US10249577B2 (en) | 2016-05-17 | 2019-04-02 | Asm Ip Holding B.V. | Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method |
| US10262859B2 (en) | 2016-03-24 | 2019-04-16 | Asm Ip Holding B.V. | Process for forming a film on a substrate using multi-port injection assemblies |
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| US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
| US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
| US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
| US10340125B2 (en) | 2013-03-08 | 2019-07-02 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
| US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US10361201B2 (en) | 2016-01-18 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor structure and device formed using selective epitaxial process |
-
1990
- 1990-09-05 JP JP23871190A patent/JPH04115531A/en active Pending
Cited By (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006515039A (en) * | 2003-04-16 | 2006-05-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Gas distribution plate assembly for a large area plasma-enhanced chemical vapor deposition |
| JP2005328021A (en) * | 2004-05-12 | 2005-11-24 | Applied Materials Inc | Plasma uniformity control by gas diffuser hole design |
| JP4541117B2 (en) * | 2004-05-12 | 2010-09-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Gas distribution plate assembly, the plasma processing chamber and diffuser plate |
| US9200368B2 (en) | 2004-05-12 | 2015-12-01 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US10312058B2 (en) | 2004-05-12 | 2019-06-04 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US10262837B2 (en) | 2004-05-12 | 2019-04-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US8845806B2 (en) | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
| US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
| US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
| US9892908B2 (en) | 2011-10-28 | 2018-02-13 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
| US9605342B2 (en) | 2012-09-12 | 2017-03-28 | Asm Ip Holding B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| US10023960B2 (en) | 2012-09-12 | 2018-07-17 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
| US10340125B2 (en) | 2013-03-08 | 2019-07-02 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
| US9790595B2 (en) | 2013-07-12 | 2017-10-17 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
| US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
| US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
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| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
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