JPH04115531A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPH04115531A JPH04115531A JP23871190A JP23871190A JPH04115531A JP H04115531 A JPH04115531 A JP H04115531A JP 23871190 A JP23871190 A JP 23871190A JP 23871190 A JP23871190 A JP 23871190A JP H04115531 A JPH04115531 A JP H04115531A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- central
- hole
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gases Substances 0.000 abstract 8
- 239000004065 semiconductors Substances 0.000 abstract 3
- 230000000875 corresponding Effects 0.000 abstract 1
- 230000001629 suppression Effects 0.000 abstract 1
Abstract
PURPOSE: To enable a reactive generated film with a uniform film thickness to be formed on a wafer by providing a throttle for restricting gas at a gas blow-off hole at a position corresponding to a central part of a semiconductor wafer.
CONSTITUTION: A tubular pin 11 is formed in nearly cylindrical shape entirely and its outer diameter is formed to have dimensions for achieving engagement into a large aperture part of a gas blow-out hole 5. Also, this tubular pin 11 is fitted to a gas blow-out hole 5a at a central part of a gas head 4 out of a number of gas blow-out holes 5 which are provided at the gas head 4 and an inner diameter of the pin 11 is changed according to film-forming conditions. Flow of reaction gas which is supplied to a central part of the semiconductor wafer is suppressed by a throttle (tubular pin) and adjusted according to film- forming conditions, a reactive generated film with a uniform film thickness can be formed on a semiconductor wafer.
COPYRIGHT: (C)1992,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23871190A JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23871190A JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04115531A true JPH04115531A (en) | 1992-04-16 |
Family
ID=17034139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23871190A Pending JPH04115531A (en) | 1990-09-05 | 1990-09-05 | Chemical vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04115531A (en) |
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-
1990
- 1990-09-05 JP JP23871190A patent/JPH04115531A/en active Pending
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