JPH04115531A - Chemical vapor growth device - Google Patents

Chemical vapor growth device

Info

Publication number
JPH04115531A
JPH04115531A JP23871190A JP23871190A JPH04115531A JP H04115531 A JPH04115531 A JP H04115531A JP 23871190 A JP23871190 A JP 23871190A JP 23871190 A JP23871190 A JP 23871190A JP H04115531 A JPH04115531 A JP H04115531A
Authority
JP
Japan
Prior art keywords
gas
film
central
hole
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23871190A
Other languages
Japanese (ja)
Inventor
Kouichirou Tsutahara
Toru Yamaguchi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23871190A priority Critical patent/JPH04115531A/en
Publication of JPH04115531A publication Critical patent/JPH04115531A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable a reactive generated film with a uniform film thickness to be formed on a wafer by providing a throttle for restricting gas at a gas blow-off hole at a position corresponding to a central part of a semiconductor wafer.
CONSTITUTION: A tubular pin 11 is formed in nearly cylindrical shape entirely and its outer diameter is formed to have dimensions for achieving engagement into a large aperture part of a gas blow-out hole 5. Also, this tubular pin 11 is fitted to a gas blow-out hole 5a at a central part of a gas head 4 out of a number of gas blow-out holes 5 which are provided at the gas head 4 and an inner diameter of the pin 11 is changed according to film-forming conditions. Flow of reaction gas which is supplied to a central part of the semiconductor wafer is suppressed by a throttle (tubular pin) and adjusted according to film- forming conditions, a reactive generated film with a uniform film thickness can be formed on a semiconductor wafer.
COPYRIGHT: (C)1992,JPO&Japio
JP23871190A 1990-09-05 1990-09-05 Chemical vapor growth device Pending JPH04115531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23871190A JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23871190A JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Publications (1)

Publication Number Publication Date
JPH04115531A true JPH04115531A (en) 1992-04-16

Family

ID=17034139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23871190A Pending JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Country Status (1)

Country Link
JP (1) JPH04115531A (en)

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