JPH02129920A - Chemical vapor growth device - Google Patents

Abstract

PURPOSE:To acquire a reaction product film having a uniform thickness by providing a deflecting plate which deflects gas flow between a gas supply head and a stage. CONSTITUTION:A deflecting plate 11 which deflects a flow of O2 gas 6 consists of a looped holder 12 and a number of rod bodies 13 having a circular cross section which are attached to the holder 12 at both end sections and extend in a holder radial direction. The deflection plate 11 is fixed between a stage 1 and a gas supply head 4. The rod body 13 holds a parallel position relationship each other and is positioned to a gas blow-off direction of a blow-off opening 8 of both blow-off openings 7, 8. The deflection plate 11 is constituted so that O2 gas 6 impinges and diffuses against the rod body 13 in a flow direction of SiH4 gas 5. According to this constitution, it is possible to supply reaction gas having a uniform density onto a semiconductor wafer and to acquire a reactive film having a uniform thickness.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus suitable for use when forming a thin film on a semiconductor wafer as a processing object.

[Conventional technology]

Conventionally, this type of chemical vapor deposition apparatus is
It is configured as shown in Figure 3. To explain this based on the same figure, in the figure, the reference numeral 1 denotes a heating stage that holds the semiconductor wafer 3 on which the reaction product film 2 is formed, and 4 denotes a plurality of heating stages provided at intervals from the stage 1. SiH as reaction gas, gas 5 and 0□ gas 6
This is a gas supply head having a large number of blow-off lowers, 8.

In the chemical vapor deposition apparatus configured in this manner, gases 5 and 0 are blown out from the blowing lower and 8 to the semiconductor wafer 3 which has been heated in advance on the stage 1, respectively.
By supplying the second gas 6, the reaction product film 2 can be formed on the semiconductor wafer 3. At this time, Si
H, gas 5 and 0□ gas 6 mix and undergo a thermal reaction.

By the way, in this type of chemical vapor deposition apparatus, the growth rate of the reaction product film 2 depends on the gas concentration supplied from the rad 4 to the semiconductor wafer 3 in the gas supply. When setting the gas concentration uniformly, it is necessary to make the gas concentration uniform at any location on the semiconductor wafer 3.

[Problem to be solved by the invention]

However, in conventional chemical vapor deposition equipment, SiH
4 gas 5 and 0
5iH when the distance between
A gas 5 and 0□ gas 6 were not mixed sufficiently.

As a result, the reaction gas having a uniform concentration is transferred to the semiconductor wafer 3.
There was a problem in that the reaction product film 2 with a uniform thickness could not be obtained. This is because the concentration of SiH4 gas 5 becomes higher in the region on the semiconductor wafer 3 where the opening of the blower lower is facing, and the concentration of 02 gas 6 is higher in the region facing the opening of the blower outlet 8. It is.

The present invention has been made in view of these circumstances, and is a chemical gas that can supply a reactive gas with a uniform concentration onto a semiconductor wafer, thereby producing a reactive film with a uniform thickness. A phase growth device is provided.

[Means for Solving the Problems] A chemical vapor deposition apparatus according to the present invention includes a stage that holds a semiconductor wafer on which a produced film is formed by a reaction gas;
This stage is equipped with a gas supply head that is spaced apart from the stage and has a large number of blow-off ports that supply a plurality of reaction gases, and a deflection plate that deflects the gas flow is provided between the gas supply head and the stage. be.

[For production]

In the present invention, the plurality of reaction gases supplied from the gas outlet can be sufficiently mixed by the deflection plate.

[Example] Hereinafter, the structure of the present invention will be explained in detail by referring to an example shown in the drawings.

FIG. 1 is a sectional view showing a chemical vapor deposition apparatus according to the present invention;
FIG. 2 is a perspective view showing the main parts of the chemical vapor deposition apparatus according to the present invention.
The same members as in FIG. 3 are designated by the same reference numerals, and detailed explanations will be omitted. In the same figure, the reference numeral 11 is a deflection plate that deflects the flow of Ot gas 6, and includes a holder 12 formed in an annular shape, and a cross-sectional circle extending in the radial direction of the holder, with both ends attached to the holder 12. It consists of a large number of shaped rods 13, and is fixed between the stage 1 and the gas supply head 4. Of these, the rod 13 is
Each maintains a parallel positional relationship and is positioned in the gas blowing direction of the blow-off port 8 of both blow-off lowers 8. Then, this deflection plate 11 is attached to the rod 13.
The structure is such that the t gas 6 collides with and diffuses in the direction of the flow of the 5iHa gas 5.

In the chemical vapor deposition apparatus configured in this way, the deflection plate 11 controls the 5i supplied from the gas blowing lower 8.
The Ha gas 5 and the 0□ gas 6 can be sufficiently mixed, and a reaction gas having a uniform concentration can be supplied onto the semiconductor wafer 3.

Although this embodiment shows the case where the deflection plate 11 is fixed between the stage 1 and the gas supply head 4, the present invention is not limited to this (see FIGS. 3 and 4). As shown in the figure, the deflection plate 22 may be rotated and held by a sliding wheel 21.
It is composed of a ring-shaped holder 23 and an inclined part 24 that deflects the flow of Ot gas 6. Here, an example has been shown in which the deflection plate 22 is rotated by a transmission means using the slide wheel 21, but it may be rotated by a transmission means such as a gear mechanism or a pulley. In addition, although the deflection plate 22 has an inclined portion 24 extending in the radial direction of the holder 23, as shown in FIG. (in Figure 5)
A structure having radial inclined portions 27 as shown in FIG. 2 may also be used.

Furthermore, in this embodiment, the rods 13 of the deflecting plate 11 are parallel to each other, but the present invention can also be applied to a deflecting plate 32 in which the rods 31 intersect as shown in FIG. As shown in FIG. 7, a deflection plate 3 having many through holes 33 is often
It may be 4. In addition, although the rod 13 is shown as having a circular cross section, the present invention may also include a rod 35 having a triangular cross section as shown in FIG. 8, and the cross sectional shape may be changed as appropriate. .

Further, in this embodiment, an example was shown in which the rod 13 is located in the gas blowing direction of the blow-off port 8, but the present invention is not limited thereto, and the rod 36 is positioned in the blow-out lower direction as shown in FIG. Of course, the rods 51 and 52 may be positioned in the gas blowing direction of each blowing lower 8 as shown in FIG. In this case, the 11th
As shown in the figure, the distance between the rod 51 and the gas supply head 4 and the rod 52. The distances between the gas supply heads 4 may be set to different sizes.

〔Effect of the invention〕

As explained above, according to the present invention, there is provided a heating stage that holds a semiconductor wafer on which a film is formed by a reaction gas, and a number of blow-off ports that are spaced apart from the stage and supply a plurality of reaction gases. Since a deflection plate is provided between the gas supply head and the stage to deflect the flow of gas, the plurality of reaction gases supplied from the gas outlet can be sufficiently mixed by the deflection plate. It can be carried out. Therefore, since a reaction gas having a uniform concentration can be supplied onto the semiconductor wafer, a reaction product film having a uniform thickness can be obtained.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a chemical vapor deposition apparatus according to the present invention;
FIG. 2 is a perspective view showing the main parts of the chemical vapor deposition apparatus according to the present invention, FIGS. 3 and 4 are perspective views and sectional views showing other embodiments, and FIGS. 5(a) and (b). ), FIGS. 6 and 7 are plan views showing deflection plates in other embodiments, and FIG.
Figures to Figures 11 are sectional views showing main parts in other embodiments;
Figure 12 is a cross-sectional view of a conventional chemical vapor deposition apparatus;
FIG. 3 is a perspective view showing the gas supply head. 1...Stage, 2...Produced film, 3...Semiconductor wafer, 4...Gas supply head, -5...
SiH4 gas, 6...0□ gas, 7.8...blowout port, 11...bending plate. Agent: Masu Oiwa No. 3, 2, 4J Vero Ward Name: 7, 8, 93-Ma, 5, 12, 13

Claims (1)

[Claims] The gas supply system includes a heating stage that holds a semiconductor wafer on which a film is formed by a reaction gas, and a gas supply head that is spaced apart from the stage and has a number of blow-off ports that supply a plurality of reaction gases. A chemical vapor deposition apparatus characterized in that a deflection plate for deflecting a gas flow is provided between a head and the stage.