JPH01166526A - Manufacture of semiconductor - Google Patents

Abstract

PURPOSE:To simplify the structure of two gas supplying heads, to suppress the generation of a reactive product in the head and to form a uniform film by supplying a plurality of reactive gases to the surface of a wafer by the two gas supplying heads. CONSTITUTION:SiH4 gas diluted or the like with N2 gas is supplied to a gas supplying head 3, and O2 gas or the like diluted with N2 gas is supplied to a gas supplying head 4. Thus, two type of gases are uniformly fed, and externally discharged from a drain tube 5 while reacting. A wafer 1 is rotated by a sample base 2, heated by a heater 6, and when the wafer is fed through reactive gas, an SiO2 film is formed thereon by a thermal reaction. Thus, since the plurality of gases are supplied by the separate heads 3 and 4, a reactive product is not deposited in the heads. Accordingly, the uniform film is always stably formed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and in particular to a semiconductor CV suitable for forming an oxide film, a nitride film, etc. on the surface of a semiconductor wafer under atmospheric pressure. D (Chemical Vapor
(Deposition) device.

[Conventional technology]

As described in Japanese Utility Model Application Publication No. 61-70929, the conventional device dilutes with, for example, N2 gas from a plurality of slit-shaped gas outlets arranged in a direction perpendicular to the direction of movement of a susceptor provided in a gas supply head. A 5iOz film is formed on a semiconductor wafer by alternately supplying a first reaction gas such as 5iHa diluted with Nz gas and a second reaction gas such as 02 diluted with Nz gas from separate outlets. .

In the conventional example, as mentioned above, two types of reactive gases have to be supplied separately using the same gas supply head, so the gas supply head is constructed by stacking several dozen thin plates alternately. It has a structure that forms a slit-shaped gas flow path and a slit-shaped outlet (number of layers, approximately several hundred 1 in length). For this reason, the Nz+5iHa gas and the Nz+Ox gas leak from the overlapping portion of the thin plates and react with each other, resulting in the accumulation of reaction products in the slits, which may clog the slits. In this case, the amount of reactive gas supplied will be different for each slit-shaped outlet. As a result, the thickness of the film formed on the wafer becomes non-uniform.

In addition, in order to uniformly supply the reactive gas to each slit-shaped outlet in the length direction of each slit-shaped outlet, not only the shape of the laminated thin plates but also the gas supply head itself has to be carefully designed. It has a complex structure and is large in size.

[Problem that the invention seeks to solve]

In the above-mentioned conventional technology, in order to supply a plurality of reactive gases using the same gas supply head, (1) the structure of the gas supply head becomes complicated, and (2) each flow path within the gas supply head becomes complicated. 9 because the reactive gas leaking from the
Since reaction products accumulate in the gas flow path and the gas flow path becomes clogged, there is a problem in that the amount of gas supplied varies depending on the blowout position, resulting in non-uniform film thickness.

An object of the present invention is to simplify the structure of a gas supply head, suppress the generation of reaction products within the head, and perform uniform film formation by stably supplying a reactive gas. .

[Means for solving the problem] The above object is achieved by supplying a plurality of reactive gases to the surface of sea urchins in vertical and horizontal directions using two gas supply heads. Ru.

[Effect]

To supply gas using two gas supply heads,
Since there is no need to implant multiple gas channels within the gas supply head, the structure of the gas supply head is greatly simplified.

Furthermore, since gases do not react with each other within the gas supply head, clogging of the gas outlet does not occur.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. As shown in FIG. 1, a semiconductor wafer 1 is placed on a sample stage 2 that can rotate once.

A reactive gas is supplied onto the surface of the semiconductor wafer 1 from the gas supply heads 3 and 4 from the directions perpendicular and horizontal to the surface of the wafer 1. For example, from the gas supply head 3 to the
When the i H4 gas and the 02 gas are supplied from the gas supply head 4, a SiOx film is formed on the surface of the semiconductor wafer 1.

The shape of the gas outlet of the gas supply heads 3 and 4 is changed to the second shape.
As shown in FIGS. 2 and 3, the gas outlet consists of a plurality of small holes 11 and slits 12. The reason for doing this is to make the amount of reactive gas supplied onto the surface of the semiconductor wafer 1 uniform.

As described above, when forming a 5ift film on one surface of a wafer, the gas supply head 3 is supplied with 5iHa gas diluted with N1 gas, and the gas supply head 4 is supplied with 5iHa gas diluted with Nx gas. Supply gas. The 5iHa gas uniformly flows out from the outlet of the gas supply head 3. At the same time, the oz gas uniformly flows out from the outlet of the gas supply head 4. As shown by the arrows indicating the direction of gas flow, the 5iHa gas flowing from the top to the bottom and the 02 gas flowing from the left to the right cause a reaction and as a whole flow from the left to the right. Flowing towards you.

It is exhausted to the outside from the exhaust pipe 5.

The wafer 1 is rotated by the sample stage 2, and the wafer 1 is rotated by the sample stage 2.
It is heated by a heater 6 provided below. When a reactive gas flows over the surface of the wafer 1 in this state as described above, a SiOx film is formed by a thermal reaction. The reason why the wafer 1 is rotated here is to reduce the influence of non-uniformity in the film formation rate at each position.

As described above, according to this embodiment, 5iHt gas and 0
Since the two gases are supplied using separate gas supply heads,
Since reaction products do not accumulate inside the gas supply head, it is possible to always supply a stable and uniform reaction gas, which enables stable uniform film formation and improves process yield. . Furthermore, since the structure of the gas supply head is greatly simplified, the head can be made smaller and the cost can be reduced.

〔Effect of the invention〕

According to the present invention, it is no longer necessary to distinguish between reactive gas flow paths within the gas supply head, and the structure of the gas supply head can be simplified, resulting in downsizing and cost reduction of the gas supply head and, ultimately, the device. There is an effect.

[Brief explanation of the drawing]

FIG. 1 shows an embodiment of the present invention, and FIGS. 2 and 3 are plan views showing the shape of the air outlet, respectively. 1... Semiconductor wafer, 2... Sample stage, 3... Gas supply 1 ■ Fig. 2

Claims (1)

[Claims] In semiconductor manufacturing equipment that flows one or more types of reactive gases onto the wafer surface and forms a film on the wafer surface through a thermal reaction, reactive gases are supplied from vertical and horizontal directions to the wafer surface. 1. A semiconductor manufacturing device characterized by comprising a reactive gas supply head for the purpose of.