JPH0539628Y2 - - Google Patents
Info
- Publication number
- JPH0539628Y2 JPH0539628Y2 JP5698187U JP5698187U JPH0539628Y2 JP H0539628 Y2 JPH0539628 Y2 JP H0539628Y2 JP 5698187 U JP5698187 U JP 5698187U JP 5698187 U JP5698187 U JP 5698187U JP H0539628 Y2 JPH0539628 Y2 JP H0539628Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- reaction gas
- gas outlet
- wafer
- reactive gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012495 reaction gas Substances 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 22
- 239000010409 thin film Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は半導体素子製造装置において大気圧中
にて熱化学反応により薄膜を半導体基板（以後ウ
エーハと略す）表面に堆積させる化学気相成長装
置（以後常圧CVD装置と略す）に関し、特に、
成膜の為の反応気体流出部の構造に関する。[Detailed description of the invention] [Industrial application field] The present invention is a chemical vapor deposition apparatus that deposits a thin film on the surface of a semiconductor substrate (hereinafter abbreviated as wafer) by a thermochemical reaction at atmospheric pressure in a semiconductor device manufacturing apparatus. (hereinafter abbreviated as normal pressure CVD equipment), in particular,
This invention relates to the structure of a reaction gas outlet for film formation.
従来この種の装置は反応気体流出部又はウエー
ハを装填した加熱受皿が一方向に移動又は往復す
ることにより、ウエーハ全面に薄膜を堆積する構
造となつていた。
Conventionally, this type of apparatus has a structure in which a reaction gas outlet or a heating tray loaded with a wafer moves in one direction or reciprocates to deposit a thin film over the entire surface of the wafer.
上述した従来の常圧CVD装置では、薄膜成長
時の反応気体流出部に対しウエーハ加熱受皿が一
方向に移動、又は往復する構造であるので、常圧
CVD装置特有の一定処理頻度で生じる反応気体
吹き出し口での反応固形物による局所的な詰まり
や反応気体流出部の製造上における僅かな吹き出
しの不均一があるとその部分に沿つたウエーハ加
熱受皿の移動線上の薄膜膜厚が薄くなりウエーハ
面内での膜厚不均一を生じるという欠点がある。
In the above-mentioned conventional atmospheric pressure CVD equipment, the wafer heating tray moves in one direction or reciprocates with respect to the reaction gas outlet during thin film growth, so the atmospheric pressure
If there is local clogging due to reaction solids at the reaction gas outlet that occurs at a certain processing frequency unique to CVD equipment, or if there is slight unevenness in the blowout due to the manufacturing process of the reaction gas outlet, the wafer heating tray may There is a drawback that the thin film thickness on the movement line becomes thinner, resulting in nonuniform film thickness within the wafer surface.
本考案の常圧CVD装置はウエーハの進行方向
又は反応気体流出部の進行方向と直角な方向に可
動な構造となつており、任意の反応気体吹き出し
領域を選択して位置調整或いは揺動できる構造と
なつている。
The atmospheric pressure CVD apparatus of the present invention has a structure that is movable in a direction perpendicular to the wafer traveling direction or the traveling direction of the reaction gas outflow section, and the structure allows the position to be adjusted or oscillated by selecting an arbitrary reaction gas blowing area. It is becoming.
本考案についてシラン系及び酸素系ガスを用い
て酸化ケイ素膜をウエーハ上に堆積する常圧
CVD装置の場合について図面を参照して説明す
る。ここで第１図は本考案の上面図で第２図はそ
のＡ−Ｂ線縦断面図、第３図はＣ−Ｄ線縦断面図
である。ウエーハ１はウエーハ受皿加熱部３によ
り加熱されたウエーハ加熱受皿２により加熱され
４の方向に移動しながら上部の反応気体流出部５
のシラン系ガス吹き出し口６及び酸素系ガス吹き
出し口７より流出する反応気体（シラン系及び酸
素系ガス）の熱化学反応により、すべてのウエー
ハ表面全面に酸化ケイ素膜を堆積する。ここで、
本考案では反応気体流出部５をウエーハ加熱受皿
の進行方向４と直角なな方向にパルスモーター９
により移動できる構造をもたせ反応気体吹き出し
口６或いは７の反応固形物により詰まつた部分
（８方向の両端附近が詰まり易い）や吹き出しの
弱い部分がウエーハ軌道上にくるのを避けより均
一な反応気体の吹き出しが得られる位置に反応気
体流出部を移動固定してより均一な膜厚の薄膜を
ウエーハ表面に形成する。
About this invention Atmospheric pressure depositing silicon oxide film on wafer using silane-based and oxygen-based gases
The case of a CVD device will be explained with reference to the drawings. Here, FIG. 1 is a top view of the present invention, FIG. 2 is a longitudinal sectional view taken along the line AB, and FIG. 3 is a longitudinal sectional view taken along the line C-D. The wafer 1 is heated by the wafer heating saucer 2 which is heated by the wafer saucer heating part 3, and moves in the direction of 4 until it reaches the reaction gas outflow part 5 in the upper part.
A silicon oxide film is deposited on the entire surface of all the wafers by a thermochemical reaction of the reaction gases (silane-based and oxygen-based gases) flowing out from the silane-based gas outlet 6 and the oxygen-based gas outlet 7. here,
In the present invention, the reaction gas outlet 5 is moved by a pulse motor 9 in a direction perpendicular to the traveling direction 4 of the wafer heating tray.
By providing a structure that allows the reaction gas to move, a more uniform reaction can be achieved by avoiding areas of the reaction gas outlet 6 or 7 that are clogged with reaction solids (the areas near both ends in the 8 directions are likely to become clogged) or weak areas of the gas outlet from falling on the wafer trajectory. A thin film having a more uniform thickness is formed on the wafer surface by moving and fixing the reaction gas outlet at a position where gas can be blown out.
〔実施例２〕 次に実施例２について説明する。[Example 2] Next, Example 2 will be explained.
第１図において、反応気体流出部５はウエーハ
加熱受皿２の移動とともに８の方向にパルスモー
ター９によつて一定周期で揺動する。この実施例
では、反応気体の吹出しが複数の箇所において存
在する場合に、薄膜の膜厚不均一を緩和できる利
点がある。 In FIG. 1, the reaction gas outlet 5 is oscillated at a constant period in the direction 8 by a pulse motor 9 as the wafer heating tray 2 moves. This embodiment has the advantage that non-uniformity in the thickness of the thin film can be alleviated when the reaction gas is blown out at a plurality of locations.
以上説明したように本考案は、常圧CVD装置
においてウエーハ加熱受皿の進行方向と直角な方
向に反応気体流出部を可動とすることにより、常
圧CVD装置特有の一定処理頻度で生じる反応気
体吹き出し口での反応固形物による局所的な詰ま
りや、反応気体流出部の製造上における僅かな吹
き出しの不均一によるウエーハ面内での堆積薄膜
の不均一を緩和し、より均一な薄膜を形成でき
る。
As explained above, the present invention enables the reaction gas to be blown out at a constant processing frequency, which is unique to atmospheric pressure CVD equipment, by making the reaction gas outflow part movable in the direction perpendicular to the direction of movement of the wafer heating tray in the atmospheric pressure CVD equipment. It is possible to form a more uniform thin film by alleviating local clogging caused by reactant solids at the mouth and non-uniformity of the deposited thin film within the wafer plane due to slight non-uniformity in blowing out during the manufacture of the reaction gas outlet.
第１図は本考案の上面図、第２図は第１図Ａ−
Ａ線断面図、第３図は第１図のＣ−Ｄ線断面図、
また第４図は従来の常圧CVD装置の縦断面図で
ある。
１……ウエーハ、２……ウエーハ（加熱）受
皿、３……ウエーハ受皿加熱部、４……ウエーハ
加熱受皿の移動方向、５……反応気体流出部、６
……シラン系ガス吹き出し口、７……酸素系ガス
吹き出し口、８……反応気体流出部移動方向、９
……パルスモーター、１０……ギヤ。
Figure 1 is a top view of the present invention, Figure 2 is Figure 1A-
A sectional view taken along the line A, Figure 3 is a sectional view taken along the CD line in Figure 1,
Moreover, FIG. 4 is a longitudinal sectional view of a conventional atmospheric pressure CVD apparatus. DESCRIPTION OF SYMBOLS 1...Wafer, 2...Wafer (heating) saucer, 3...Wafer saucer heating part, 4...Movement direction of wafer heating saucer, 5...Reaction gas outflow part, 6
... Silane-based gas outlet, 7... Oxygen-based gas outlet, 8... Reaction gas outlet moving direction, 9
...Pulse motor, 10...gear.
Claims (1)
応気体流出部とを有し、前記半導体基板加熱受皿
または前記反応気体流出部が所定の方向に移動す
ることにより、前記半導体基板受皿に載置された
半導体基板上を前記反応気体流出部を通過させ前
記半導体基板上に化学気相成長を行う常圧化学気
相成長装置において、前記反応気体流出部は前記
半導体基板加熱受皿の前記所定の方向とは直交す
る方向の全幅にわたつて前記反応気体を同時に流
出可能な幅を有するものであり、かつ前記直交す
る方向に可動であることを特徴とする常圧化学気
相成長装置。 It has a semiconductor substrate heating tray and a reactive gas outflow portion through which a reactive gas flows out, and the semiconductor substrate heating tray or the reaction gas outflow portion moves in a predetermined direction to place the semiconductor substrate on the semiconductor substrate tray. In the atmospheric pressure chemical vapor deposition apparatus for performing chemical vapor deposition on the semiconductor substrate by causing the reactive gas to pass through the reactive gas outlet on the semiconductor substrate, the reactive gas outlet is different from the predetermined direction of the semiconductor substrate heating tray. An atmospheric pressure chemical vapor deposition apparatus characterized in that it has a width that allows the reaction gas to flow out simultaneously over the entire width in orthogonal directions, and is movable in the orthogonal directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5698187U JPH0539628Y2 (en) | 1987-04-14 | 1987-04-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5698187U JPH0539628Y2 (en) | 1987-04-14 | 1987-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63164213U JPS63164213U (en) | 1988-10-26 |
| JPH0539628Y2 true JPH0539628Y2 (en) | 1993-10-07 |
Family
ID=30886276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5698187U Expired - Lifetime JPH0539628Y2 (en) | 1987-04-14 | 1987-04-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539628Y2 (en) |
-
1987
- 1987-04-14 JP JP5698187U patent/JPH0539628Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63164213U (en) | 1988-10-26 |
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