JPS62193129A - Treatment apparatus - Google Patents

Abstract

PURPOSE:To make treatment uniform, by providing exhausting means, which suck gas, at the peripheral parts and the central part of a head. CONSTITUTION:In an exhausting hood 7, an approximately cube shaped head 11, in four sides of which recesses 11a are formed, is inserted and supported. Each recess 11a is communicated to an exhaust port 8. Thus peripheral part exhaust paths 9 as exhausting means, which suck gas, are formed in the hood 67. A central exhaust path 10 is provided at the central part of the head 11 so as to communicate the exhaust port 8 and the space under the head 11, and so as to penetrate the head in the up and down direction. The exhaust path 10 approximately faces the center of a turntable 6. Thus the flow rate of the gas can be made uniform from the periphery to the center. Owing to the uniform gas treating rate, the treatment can be made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a processing technology, in particular a processing technology for subjecting a workpiece to a desired process using a processing gas, for example, in the manufacturing process of a semiconductor device. This invention relates to techniques used to form oxide films on wafers.

[Conventional technology]

In the manufacturing process of semiconductor devices, when forming an oxide film on a wafer, an atmospheric pressure CVD equipment is sometimes used. The wafer is continuously transferred in the lateral direction in the vicinity of the air outlet, and C is discharged onto the wafer in the vicinity of the air outlet.
Some are configured to have a VD film deposited on them.

An example of the oxide film formation technology described is "Electronic Materials November 1983 Special Edition" published by Kogyo Research Association Co., Ltd.
Published on November 15, 1981, there are pages 57 to 62.

[Problem that the invention seeks to solve]

However, in such continuous atmospheric CVD equipment,
The gas flow outlet blown out from the outlet is thicker at the center and the periphery of the wafer (because they are different, the deposition rate on the wafer is different, and the film thickness is thicker at the periphery and thinner at the center, making it non-uniform). The inventors have discovered that there is a problem in that

An object of the present invention is to provide a processing technique that can make processing uniform.

Another object of the present invention is to provide a processing technique that can obtain good step and coverage in film forming processing.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

An overview of typical inventions disclosed in this application is as follows.

That is, the exhaust means for sucking gas is provided not only at the periphery of the head but also at the center.

[Effect]

According to the above-described means, the gas blown out from the head is sucked not only toward the periphery but also toward the center, so that the gas flow rate at the object stage is made uniform between the center and the periphery. , the gas treatment will be uniform throughout.

〔Example〕

Fig. 1 is a longitudinal cross-sectional view showing an atmospheric pressure CVD apparatus which is an embodiment of the present invention, Fig. 2 is a perspective view showing the head, and Figs. It is a distribution map.

In this embodiment, the atmospheric pressure CVD apparatus as a processing apparatus for forming an oxide film is equipped with a processing chamber 1, and doors are provided on mutually opposing side walls (hereinafter referred to as left and right walls) of the processing chamber 1. The loading inlet 2 and the unloading outlet 3 are connected to cassettes 5 to 1 in which a plurality of wafers 4 as objects to be processed are accommodated.
They are each opened so that one wafer 4 can be carried in and carried out.

At the lower part of the processing chamber 1, a turntable 6 serving as a stage for processing objects is arranged so as to be able to hold the wafers 4 one by one.Handlers (Fig. (not shown) are provided between the cassette 5 and the turntable 6 so that the wafer 4 can be transferred between the cassette 5 and the turntable 6. The turntable 6 is configured to be rotated by a suitable driving means such as a motor while holding the wafer 4, and a heater 13 is arranged below the turntable 6 to heat the wafer 4. It is set up.

Inside the processing chamber 1, an exhaust hood 7 is disposed and suspended directly above the turntable 6, and the exhaust hood 7 has an exhaust gas connected to an exhaust device (not shown) such as a vacuum pump. Port 8 has been opened. A generally cubic head 11 having recesses 11a formed on four sides is fitted and supported in the exhaust hood 7, and each recess 11a communicates with the exhaust port 8, so that the head 11 is connected to the hood 7. A peripheral exhaust passage 9 as an exhaust means for sucking gas between the two is formed respectively. In addition, a central exhaust passage IO is provided in the center of the head II, penetrating vertically so as to communicate the exhaust port 8 with the lower surface space of the head 11, and this exhaust passage IO is located at the center of the turntable 6. They are almost facing each other.

A plurality of elongated slit-shaped outlets 12 are provided on the lower surface of the head 11 so as to blow out gas toward the turntable 6, and each outlet 12 is arranged parallel to each other with both ends aligned. ing. Inside the head II, gas passages 14 are formed in a hollow shape in which the air outlets 12 are continuous in the vertical direction, corresponding to each of the air outlets 12, and each of the gas passages 14 is connected to each other, and Communication with each exhaust path 9 and IO is cut off. Furthermore, two systems of gas supply passages 15a and 15b are formed inside the head 11, and adjacent gas passages 14a and 14b are alternately connected to both supply passages 15a and 15b, respectively.

Next, the effect will be explained.

Only one wafer 4 is loaded from a cassette 5 containing a plurality of wafers 4 to be processed into the processing chamber l from the loading port 2 at a timely manner. The wafers 4 in this actual cassette 5 are transferred one by one onto the turntable G by the handler.
It is rotated by a turntable 6.

On the other hand, processing gases for performing desired processing are fed into the gas supply paths 15a and 15b, respectively.

For example, when depositing a silicon oxide film on a wafer, monosilane and oxygen are each introduced. At the same time, each exhaust path 9 and io are exhausted through the exhaust port 8.

The gas sent into both supply passages 15a and 15b is supplied to the passages 14a and 14b groups connected to these, respectively, and the turntable 6 is supplied from the outlet 12 thereof.
They are each blown out toward the upper wafer 4. At this time, since the exhaust passages 9 and 10 arranged on the outside and the center of the head 11 perform exhaustion, the gas blown out from the outlet 12 flows as if being sucked toward the periphery and the center. become.

Then, the blown gas causes a CVD reaction, thereby forming a CVD film on the wafer 4 being rotated by the turntable 6 directly below the head 11.

The wafers 4 treated with the gas are sequentially received from the turntable 6 into the aerodynamic set 5 by a handler. When the cassette 5 is full, the processed wafers are taken out from the exit 3 at a timely manner while being accommodated in the cassette.

By the way, as shown in FIG. 3, if the exhaust path is not provided in the center of the head, the gas blown out from the gas outlet will flow only toward the periphery of the wafer.
The gas flow rate on the wafer is concentrated at the periphery and becomes thinner at the center, and as a result, the film thickness distribution on the wafer is thicker at the periphery and thinner at the center, as shown in the figure. turn into.

However, in this embodiment, since the exhaust path 10 is also provided in the center of the head 11, the gas blown out from the gas outlet 12 flows toward the periphery and the center of the wafer 4. The gas flow rate on the wafer 4 is uniform from the periphery to the center. As a result, the gas deposition rate becomes uniform, so that the film thickness distribution on the wafer 4 becomes uniform from the periphery to the center, as shown in FIG.

Further, in this embodiment, since the wafer 4 is rotated by the turntable 6 during the film forming process, the step coverage for the step portion in the pattern of the wafer 4 is extremely good. That is, this is because the stepped portion orients the gas flow substantially equally in all directions as it rotates. Furthermore, since the film thickness distribution is uniform throughout as described above, the stage coverage is also approximately uniform throughout.

According to the embodiment described above, the following effects can be obtained.

(1) By providing an exhaust means in the center of the head, the gas blown out from the gas outlet will flow toward the periphery and the center, making it possible to equalize the gas flow rate from the periphery to the center. As a result, the film formation processing rate using the gas can be made uniform over the entire film, and the film thickness distribution can be made uniform.

(2) By configuring the object to be rotated during the film formation process, the gas flow can be directed in all directions at each part, which greatly improves the step coverage of film formation. can be done.

(3) Due to (2) and (3) above, the processing state of the object to be processed can be made uniform over the entire object;
The product can be homogenized and the product yield can be increased.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, the workpiece station may not only use a turntable configured to rotate the workpiece, but also a turntable configured to generally transport the workpiece in one direction, either continuously or intermittently. You may also use a conveyor etc.

There are no limitations on the width, length, number of lines, etc. of the air outlet, nor are there any limitations on the shape, structure, etc. of the passage communicating with the air outlet, the head, the exhaust means, etc.

The types of gas to be blown out are not limited to two types, but may be one type or three or more types, and the configuration is not limited to the configuration in which adjacent blow-off ports blow out different types of gases.
It may be configured so that different types of gas are blown out every other plurality.

In the above explanation, the invention made by the present inventor was mainly applied to an atmospheric pressure CVD apparatus, which is the field of application that formed the background of the invention. It can be used in forming devices, diffusion devices, etc. The present invention can be applied to at least general processing apparatuses that use processing gas.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

By providing an exhaust means also in the center of the head, the gas blown out from the gas outlet will flow toward the periphery and the center, making it possible to equalize the gas flow rate from the periphery to the center. By equalizing the processing rate, the processing can be made uniform.

[Brief explanation of drawings]

Fig. 1 is a vertical sectional view showing an atmospheric pressure CVD apparatus which is an embodiment of the present invention, Fig. 2 is a perspective view showing the head/domain, and Figs. It is a film thickness distribution map. 1... Processing room, 2... Loading port, 3... Loading port, 4
...Wafer (workpiece), 5...Cassette, 6...
・Turntable (processed object stage), 7... Exhaust hood, 8... Exhaust port, 9... Peripheral exhaust path (exhaust means), 10... Central exhaust path (exhaust means), 11・
... Head, 12 ... Air outlet, 13 ... Heater, 1
4... Gas passage, 15a, 15b... Gas supply path. ＼, Agent Patent Attorney Katsuma Ogawa No.2, No.3, No.3! Bunkanodai 4 Tsuki 4 molecules

Claims (1)

[Claims] 1. A head equipped with a plurality of elongated gas blow-off ports is opposed to the workpiece stage, and this head is provided with exhaust means for sucking gas at the periphery and the center, respectively. A processing device characterized by: 2. The processing apparatus according to claim 1, wherein the processing object stage is configured to rotate.