NL8701549A - Magnetron plasma reactor for plasma etching and depositing IC - is filled with ionisable gas subjected to RF and magnetic fields - Google Patents
Magnetron plasma reactor for plasma etching and depositing IC - is filled with ionisable gas subjected to RF and magnetic fields Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
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Abstract
Description
N.0. 3W9 1 s *N.0. 3W9 1s *
Plasmareactor van het magnetrontype voor hoge-flux plasma-etsen en plasma-depositie.Magnetron-type plasma reactor for high-flux plasma etching and plasma deposition.
Aanvraagster noemt als uitvinders: Dr. ÏÏ.J. Hopman en Br. Ir. E.H.A.The applicant mentions as inventors: Dr. ir. ÏÏ.J. Hopman and Br. Ir. E.H.A.
Grann^Q^tv£n(j£ng beeft betrekking op een plasmareactor van het magne- 5 trontype voor hoge-flux plasmabewerking van oppervlakken, zoals plasma-etsen en plasma-depositie, omvattende een plasmakamer begrensd door een binnenwand en een in hoofdzaak deze binnenwand op afstand omringende buitenwand, welke binnenwand aan het oppervlak is voorzien van een of meer oplegvlakken voor te bewerken voorwerpen, zoals IC wafels of derge-10 lijke, waarbij de plasmakamer wordt gevuld met het te ioniseren gas, waarbij een in hoofdzaak radiaal verlopend electrisch rf veld (E) tussen binnen- en buitenwand en een in hoofdzaak evenwijdig aan de genoemde oppervlakken verlopend magnetisch dc veld (B) wordt aangelegd, waardoor een bewerking van de genoemde voorwerpen in de (E x B)-type plasma-ont-15 ladingen mogelijk wordt. Een dergelijke plasmareactor is bekend uit het artikel van I. Lin e.a. in "Applied Physics Letters" 44 (1984) blz.Grann ^ q ^ tv (n) relates to a microwave-type plasma reactor for high-flux plasma processing of surfaces, such as plasma etching and plasma deposition, comprising a plasma chamber bounded by an inner wall and a substantially this inner wall enclosing a distance outer wall, which inner wall is provided on the surface with one or more bearing surfaces for objects to be processed, such as IC wafers or the like, wherein the plasma chamber is filled with the gas to be ionized, whereby a substantially radially extending electric rf field (E) between inner and outer wall and a magnetic dc field (B) extending substantially parallel to said surfaces is applied, thereby processing the said objects in the (E x B) type plasma 15 charges are possible, such a plasma reactor is known from the article by I. Lin et al. In "Applied Physics Letters" 44 (1984) p.
185-187.185-187.
Bij de fabricage van VLSI chips in de industrie kan men recentelijk twee trends onderscheiden. Ten eerste de wens om grotere wafels met een 20 diameter van 6 inch of zelfs 8 inch te kunnen behandelen. Hiervoor dient de homogeniteit van het plasma dergelijke afmetingen te kunnen bestrijken. Ten tweede is er de wens om van ladingsgewijze naar enkelvoudige-wafel etsen over te gaan. Dit heeft alleen zin wanneer voldoende hoge opbrengsten gerealiseerd kunnen worden. In het geval van etsen van en-25 kelvoudige wafels is hiervoor een etssnelheid van tenminste 5 nm/s (^3000 A/min) nodig. In het geval van depositie geldt een groeisnelheid van ten minste 3,3 nm/s ( ^ 2000 A/min).Two trends can recently be distinguished in the manufacture of VLSI chips in industry. Firstly, the desire to be able to handle larger wafers with a diameter of 6 inch or even 8 inch. For this, the homogeneity of the plasma should be able to cover such dimensions. Second, there is a desire to transition from batch to single wafer etching. This only makes sense if sufficiently high yields can be realized. In the case of etching of single wafers, this requires an etching rate of at least 5 nm / s (^ 3000 A / min). In the case of deposition, a growth rate of at least 3.3 nm / s (^ 2000 A / min) applies.
Bij de uit bovengenoemd artikel bekende plasmareactor wordt een redelijk hoge plasmadichtheid in de plasmakamer gerealiseerd. Gewoonlijk 30 gaat plasma-etsen vergezeld met substraatbeschadiging. Deze wordt veroorzaakt door de met hoge energie op het wafeloppervlak inslaande ionen en andere vormen van straling.In the plasma reactor known from the above article, a reasonably high plasma density is realized in the plasma chamber. Usually, plasma etching is accompanied by substrate damage. This is caused by the high energy hitting ions on the wafer surface and other forms of radiation.
De uitvinding beoogt bovengenoemd nadeel te ondervangen en een plasmareactor aan te geven waarin de levensduur van de plasmadeeltjes 35 verlengd en de homogeniteit van het plasma verbeterd wordt, terwijl de bewerking bij lagere drukken kan plaats vinden.The object of the invention is to overcome the above drawback and to indicate a plasma reactor in which the life of the plasma particles is extended and the homogeneity of the plasma is improved, while the operation can take place at lower pressures.
Dit wordt hij een plasmareactor van de in de aanhef genoemde soort volgens de uitvinding aldus bereikt dat de buitenwand voorzien is van een meerpolig magneetstelsel met afwisselend langs de omtrek van de bui-40 tenwand opgestelde noord- en zuidpolen, die een herhalend puntvormig 870 1 543 * 2 * magnetisch opsluitveld in de plasmakamer opwekken, waardoor een verdere verhoging van de levensduur van de plasmadeeltjes en een verbetering van de plasmahomogeniteit wordt verkregen.This is achieved in a plasma reactor of the type mentioned in the preamble according to the invention, such that the outer wall is provided with a multipole magnet system with north and south poles arranged alternately along the circumference of the outer wall, which form a repeating point-shaped 870 * 2 * Generate magnetic confinement field in the plasma chamber, thereby further increasing the life of the plasma particles and improving the plasma homogeneity.
De uitvinding zal aan de hand van een uitvoeringsvoorbeeld van een 5 plasma-etser nader worden toegelicht met verwijzing naar de tekeningen, waarin:The invention will be further elucidated on the basis of an exemplary embodiment of a plasma etcher with reference to the drawings, in which:
Fig. 1 een schematisch doorsnede-aanzicht toont van de bekende plasmareactor van het magnetrontype;Fig. 1 is a schematic sectional view of the prior art microwave reactor plasma reactor;
Fig. 2 een schematisch doorsnede-aanzicht geeft van een uitvoe-10 ringsvorm van de plasmareactor volgens de uitvinding;Fig. 2 is a schematic sectional view of an embodiment of the plasma reactor according to the invention;
Fig. 3 een grafiek toont van de ionendichtheid en plasmagrenslaag-spanning in een Argonplasma versus een variërend axiaal magnetisch dc veld; enFig. 3 shows a graph of the ion density and plasma boundary layer voltage in an Argon plasma versus a varying axial DC magnetic field; and
Fig. 4 een grafiek toont van de etssnelheid van S1O2 in een CF4 15 plasma versus het axiale magnetische dc veld.Fig. 4 shows a graph of the etching rate of S1O2 in a CF4 plasma versus the axial DC magnetic field.
Fig. 1 geeft een doorsnede aanzicht van een bekende plasmareactor voor hoge-flux plasma-etsen. Deze plasmareactor bestaat in wezen uit twee coaxiale cilinders, een binnencilinder 1 en buitencilinder 2, en twee afsluitende zijflenzen. Hierbij wordt een radiaal electrisch rf 20 veld Erf aangelegd. In combinatie met een axiaal magnetisch dc veld B zal dit een oscillatorische azimutale beweging van de plasma electronen, de zogenaamde E x B drift, veroorzaken zoals als voorbeeld in fig.Fig. 1 is a cross-sectional view of a known plasma reactor for high flux plasma etching. This plasma reactor essentially consists of two coaxial cylinders, an inner cylinder 1 and outer cylinder 2, and two sealing side flanges. Hereby a radial electric rf 20 field Erf is applied. In combination with an axial magnetic dc field B this will cause an oscillatory azimuthal movement of the plasma electrons, the so-called E x B drift, as in the example in fig.
1 is aangegeven. Het B-veld verhindert dat de electronen rechtstreeks naar de electroden zullen bewegen, hetgeen zou gebeuren wanneer alleen 25 het electrische rf veld aanwezig zou zijn (d.w.z. wanneer B = 0). Hierdoor wordt de levensduur van deze electronen aanzienlijk verhoogd en daarmede hun vermogen om het etsgas te ioniseren en radicalen op te wekken. Daar de Larmorradius van de ionen groot is ten opzichte van de diameter van de reactor worden de ionen niet in hun beweging gehinderd. Het 30 gevolg is dat een langere levensduur van de plasmadeeltjes en daardoor een hogere plasmadichtheid en etssnelheid wordt verkregen.1 is indicated. The B-field prevents the electrons from moving directly to the electrodes, which would happen if only the electric RF field were present (ie when B = 0). This greatly increases the life of these electrons and their ability to ionize the etching gas and generate radicals. Since the Larmor radius of the ions is large relative to the diameter of the reactor, the ions are not hindered in their movement. The result is that a longer life of the plasma particles and thereby a higher plasma density and etching speed is obtained.
Behalve een toename in de globale plasmadichtheid heeft het aangelegde axiale magnetische dc veld een tweede voordeel tot gevolg. De ge-emitteerde secundaire electronen uit de electrode-oppervlakken zijn be-35 perkt in hun beweging, hetgeen tot gevolg heeft dat de ionisatiesnelheid en dus de plasmadichtheid nabij het oppervlak locaal vergroot wordt.In addition to an increase in the global plasma density, the applied axial magnetic dc field results in a second advantage. The secondary electrons emitted from the electrode surfaces are limited in their movement, which results in the ionization rate and thus the plasma density near the surface being locally increased.
Verder wordt niet alleen de plasmadichtheid beïnvloed door het aanleggen van een magnetisch veld, maar ook de plasmaspanning of grenslaag-spanning. Deze grenslaagspanning tussen plasma en wand, die in feite de 40 inslagenergie van de ionen op het wafeloppervlak regelt, hangt af van 870 1 549 3 ' het verschil in beweeglijkheid tussen ionen en electronen. Door de aanwezigheid van magnetische veldlijnen evenwijdig aan het oppervlak zal de electronenbeweeglijkheid in een richting naar dit oppervlak beperkt worden en als gevolg daarvan zal de geïnduceerde dc spanning over de laag 5 verkleind worden. Dat wil zeggen dat door de magnetische veldsterkte te veranderen de plasmaspanning gestuurd kan worden. Dit is van belang daar een lagere grenslaagspanning een kleinere versnelling van ionen over de laag en daardoor een verminderde stralingbeschadiging in het substraat tot gevolg heeft. De hoge etssnelheden, zoals eerder vermeld, zijn daar-10 door bij kleinere grenslaagspanningen mogelijk.Furthermore, not only the plasma density is influenced by the application of a magnetic field, but also the plasma voltage or boundary layer voltage. This boundary layer voltage between plasma and wall, which in fact controls the impact energy of the ions on the wafer surface, depends on 870 1 549 3 'the difference in motility between ions and electrons. The presence of magnetic field lines parallel to the surface will limit electron mobility in one direction to this surface and, as a result, the induced dc voltage across layer 5 will be reduced. That is, by changing the magnetic field strength, the plasma voltage can be controlled. This is important since a lower boundary layer voltage results in a smaller acceleration of ions across the layer and thereby a reduced radiation damage in the substrate. The high etching rates, as mentioned earlier, are therefore possible at smaller boundary layer voltages.
Door nu bij de plasmareactor van het magnetrontype in de buitenwand een meerpolig magneetstelsel met afwisselend aan de omtrek van de buitenwand opgestelde noord- en zuidpolen op te nemen wordt een herhalend puntvormig magnetisch opsluitveld in de plasmakamer aanvullend aan 15 het evenwijdig aan de oppervlakken verlopende magnetische dc-veld opgewekt. De plasmareactor volgens de uitvinding kan met twee confocale bollen of icosaeders als binnenwand en buitenwand of met een binnencilinder en buitencilinder met afsluitende zij flenzen als binnenwand en buitenwand zijn uitgevoerd. Door het aanvullende opsluitveld wordt een verdere 20 verhoging van de levensduur van de plasmadeeltjes en een verbetering van de plasmahomogeniteit verkregen met als gevolg een hogere bewerkings-snelheid, een verminderde stralingsbeschadiging aan het te behandelen substraatoppervlak en de mogelijkheid van plasma-etsen of -depositie bij lage gasdrukken. De mogelijkheid van het werken bij lage gasdruk is 25 eveneens een direct gevolg van de langere levensduur van de plasma-elec-tronen. Om de ontlading in stand te houden moeten er voldoende ioniserende botsingen tussen electronen en neutrale gasdeeltjes plaatsvinden.By incorporating a multipolar magnet system with north and south poles alternately arranged on the periphery of the outer wall at the microwave-type plasma reactor in the outer wall, a repeating punctiform magnetic confinement field in the plasma chamber is added to the magnetic dc extending parallel to the surfaces. field generated. The plasma reactor according to the invention can be constructed with two confocal spheres or icosahedrons as inner wall and outer wall or with an inner cylinder and outer cylinder with closing side flanges as inner wall and outer wall. The additional confinement field provides a further increase in the lifetime of the plasma particles and an improvement in the plasma homogeneity, resulting in a higher processing speed, a reduced radiation damage to the substrate surface to be treated and the possibility of plasma etching or deposition during low gas pressures. The possibility of operating at low gas pressure is also a direct result of the longer life of the plasma electrons. In order to maintain the discharge, sufficient ionizing collisions between electrons and neutral gas particles must take place.
De afname van de kans op botsingen als gevolg van drukverlaging wordt gecompenseerd door het feit dat de electronen een langere weg afleggen 30 binnen het plasma volume.The decrease in the risk of collisions due to pressure drop is offset by the fact that the electrons travel a longer distance within the plasma volume.
Naast de buitencilinder kunnen ook de zij flensen van een meerpolig magneetstelsel zijn voorzien zodat de plasmakamer aan alle zijden een herhalend puntvormig magnetisch opsluitveld heeft. Opgemerkt wordt dat het een der eigenschappen van het veelpolige magneetveld is, dat het 35 nauwelijks bijdraagt aan het totale B-veld op de wafel en daardoor op die plaats geen plasma-inhomogeniteiten kan introduceren.In addition to the outer cylinder, the side flanges can also be provided with a multipole magnetic system, so that the plasma chamber has a repeating pointed magnetic retaining field on all sides. It is noted that it is one of the properties of the multipole magnetic field that it hardly contributes to the total B-field on the wafer and therefore cannot introduce plasma inhomogeneities at that location.
In figuur 2 is een doorsnede-aanzicht gegeven van een uitvoeringsvorm van de plasmareactor volgens de uitvinding. In dit voorbeeld wordt de buitenwand door een buitencilinder met cirkelvormige doorsnede en de 40 binnenwand door een binnencilinder met meerhoekige doorsnede en afslui- 8701549 4 tende zijflenzen gevormd. Het is duidelijk dat andere en onderling gelijke of ongelijke doorsnedevormen voor beide wanden eveneens mogelijk zijn, zoals bijv. een "renbaanvormige" doorsnede. De buitencilinder 1 heeft aan de binnenzijde een meerpolig magneetstelsel 3 met afwisselend 5 opgestelde noord- en zuidpolen 4. De polariteit mag wisselen in de azi-mutale richting, de axiale richting of in beide richtingen. Deze polen wekken binnen de plasmakamer het genoemde herhalende puntvormige extra opsluitveld op dat in fig. 2 voor een deel is getekend en met 8 is aangeduid. De binnencilinder 2 kan van één of meerdere oplegvlakken zijn 10 voorzien waarop een IC wafel, zoals 7, ten behoeve van een verdere ets-bewerking kan zijn gemonteerd. De buitencilinder 1 is veelal geaard en aan de binnencilinder 2 wordt via een aanpasnetwerk een radiofrequent spanningssignaal, bijv. van 13,56 MHz, toegevoerd. Het etsgas wordt in de plasmakamer ingevoerd via een aantal gelijkelijk langs de omtrek ver-15 deeld aangebrachte capillairen. Door dit grote aantal gasinlaten wordt de uniformiteit van het plasma verbeterd. De binnenwand en de buitenwand kunnen aan de binnenzijde van de plasmakamer voorzien zijn van een di-electrische bekledingslaag. Tevens kunnen deze wanden aan de buitenzijde van de plasmakamer voorzien zijn van fluïdumkanalen, zoals in de figuur 20 met 6 aangegeven, voor een regeling van de temperatuur binnen de plasmakamer .Figure 2 shows a cross-sectional view of an embodiment of the plasma reactor according to the invention. In this example, the outer wall is formed by an outer cylinder with circular cross-section and the inner wall by an inner cylinder with polygonal cross-section and closing side flanges. It is clear that other and mutually equal or unequal cross-sectional shapes for both walls are also possible, such as, for example, a "racecourse-shaped" cross-section. The outer cylinder 1 has on the inside a multipole magnet system 3 with north and south poles 4 arranged alternately. The polarity may vary in the axis mutal direction, the axial direction or in both directions. These poles generate within the plasma chamber the said repetitive point-shaped additional confinement field, which is partly drawn in Figure 2 and indicated by 8. The inner cylinder 2 can be provided with one or more bearing surfaces 10 on which an IC wafer, such as 7, can be mounted for a further etching operation. The outer cylinder 1 is usually grounded and the inner cylinder 2 is supplied with a radio frequency voltage signal, e.g. of 13.56 MHz, via an adaptation network. The etching gas is introduced into the plasma chamber through a number of capillaries equally distributed circumferentially. Due to this large number of gas inlets, the uniformity of the plasma is improved. The inner wall and the outer wall can be provided with a dielectric coating layer on the inside of the plasma chamber. These walls can also be provided on the outside of the plasma chamber with fluid channels, as indicated by 6 in figure 20, for controlling the temperature within the plasma chamber.
Het genoemde opsluitveld wordt verkregen door de afwisselende noord- en zuidpolen met behulp van permanente magneten uit te voeren. Het evenwijdig aan de oplegvlakken verlopende magnetische dc veld, dat 25 bij een coaxiale cilindrische uitvoering van de plasmareactor een axiaal magnetisch veld is, kan zowel door electromagnetische spoelen als door permanente magneten gerealiseerd worden. In fig. 2 is als voorbeeld een rond de buitenwand gewikkelde dc spoel met 5 aangegeven. Het is van belang dat het axiaal verlopende magnetische veld nabij het oppervlak van 30 de te etsen wafel 7 bijzonder weinig variatie ondergaat, bij voorkeur minder dan 1 %.The said confinement field is obtained by executing the alternating north and south poles using permanent magnets. The magnetic dc field running parallel to the bearing surfaces, which in the coaxial cylindrical design of the plasma reactor is an axial magnetic field, can be realized both by electromagnetic coils and by permanent magnets. In Fig. 2, as an example, a dc coil wound around the outer wall is indicated by 5. It is important that the axially extending magnetic field near the surface of the wafer 7 to be etched undergoes particularly little variation, preferably less than 1%.
De toepassing van magnetische velden heeft tot gevolg dat het para-meterregime van de bewerking kan worden uitgebreid naar lagere drukken, d.w.z. ca. 10-^ Torr in het geval van plasma-etsen of ca. 10“1 35 Torr in het geval van plasma-depositie. In combinatie met de genoemde magnetische velden wordt het plasma met een standaard microgolf- of radiofrequent generator teweeggebracht.The application of magnetic fields means that the parameter regime of the operation can be extended to lower pressures, ie approx. 10- Torr in the case of plasma etching or approx. 10-135 Torr in the case of plasma -the position. In combination with the said magnetic fields, the plasma is generated with a standard microwave or radio frequency generator.
In figuur 3 is een grafiek aangegeven van de invloed van het axiale magnetische veld op de ionendichtheid en grenslaagspanning. Door het 40 magnetische veld van 0 tot 260 gauss te veranderen kan de grenslaag dc 870 154 d 5 » spanning van enige honderden volts tot enkele volts worden gereduceerd. Afhankelijk van de gasdruk kan de spanning zelfs van teken veranderen.Figure 3 shows a graph of the influence of the axial magnetic field on the ion density and boundary layer voltage. By changing the magnetic field from 0 to 260 gauss, the boundary layer dc 870 154 d 5 voltage can be reduced from a few hundred volts to a few volts. Depending on the gas pressure, the voltage may even change sign.
Hierdoor ontstaat de mogelijkheid van regeling van de energie van de ionen die op het wafeloppervlak inslaan. Het axiale magnetische veld kan 5 dus zodanig worden ingesteld dat een minimale beschadiging aan het sub-straatoppervlak afhankelijk van de verschillende plasmadichtheden, spanningen en etssnelheden wordt bereikt.This creates the possibility of controlling the energy of the ions striking the wafer surface. Thus, the axial magnetic field can be adjusted to achieve minimal damage to the substrate surface depending on the different plasma densities, stresses, and etch rates.
In figuur 4 is de etssnelheid van een S1O2 wafeloppervlak in een CF4 plasma-ontlading versus de veldsterkte van het axiale magnetische 10 veld aangegeven.Figure 4 shows the etching rate of an S1O2 wafer surface in a CF4 plasma discharge versus the field strength of the axial magnetic field.
In het geval van fysisch sputteren wordt de snelheid, waarmee de oppervlaktemoleculen worden weggenomen, in hoofdzaak beperkt door de kinetische energie van de op het oppervlak inslaande plasmadeeltjes. Het is echter bekend dat SiO£ chemisch geëtst kan worden bijvoorbeeld door 15 fluor of fluor bevattende radicalen, zoals opgewekt in een CF4 ontlading, te gebruiken. Daarom is bij een reactieve-ionen etsing de kinetische energie van de op het oppervlak inslaande deeltjes van minder belang. Deze kinetische energie moet wel voldoende hoog zijn om de zwak-gebonden chemische reactieproducten met dezelfde snelheid weg te nemen 20 als zij aan het oppervlak gevormd worden. Van meer belang zal de dichtheid van de F en de CFn radicalen in de plasmagrenslaag zijn en deze grootheid zal toenemen met een toename van de plasmadichtheid (daar beide een product zijn van de botsingen die in de plasmamassa plaatsvinden) .In the case of physical sputtering, the rate at which the surface molecules are removed is mainly limited by the kinetic energy of the plasma particles hitting the surface. However, it is known that SiO can be chemically etched, for example, by using fluorine or fluorine-containing radicals, such as generated in a CF4 discharge. Therefore, in a reactive ion etching, the kinetic energy of the surface impact particles is less important. However, this kinetic energy must be high enough to remove the weakly bonded chemical reaction products at the same rate as they are surface-formed. More importantly, the density of the F and the CFn radicals will be in the plasma boundary layer and this magnitude will increase with an increase in plasma density (since both are a product of the collisions that occur in the plasma mass).
25 De in figuur 4 weergegeven metingen werden uitgevoerd bij verschil lende axiale magnetische veldsterkten, waarbij het geabsorbeerde vermogen op 2 kWatt en de gasdruk op 6 mTorr werd gehouden. Het is duidelijk dat de etssnelheid niet door de de grenslaagspanning, waarvan in figuur 3 werd aangegeven dat deze bij hogere waarden van B zeer laag is, maar 30 door de chemische reacties werd bepaald. Als gevolg van de verbeterde magnetische opsluiting volgens de uitvinding neemt de ionendichtheid en eveneens de dichtheid van de radicalen toe waardoor een etssnelheid wordt verkregen die een orde hoger is dan bij de bekende stand van de techniek. Deze bij lage gasdruk gemeten etssnelheid van 5 nm/s is van 35 groot belang voor toepassingen bij industriële enkelvoudige-wafelverwer-king.The measurements shown in Figure 4 were performed at different axial magnetic field strengths, keeping the absorbed power at 2 kWatt and the gas pressure at 6 mTorr. It is clear that the etching rate was not determined by the boundary layer voltage, which in Figure 3 was indicated to be very low at higher values of B, but by the chemical reactions. As a result of the improved magnetic confinement according to the invention, the ion density and also the density of the radicals increases, resulting in an etching rate that is an order higher than in the known prior art. This etching rate of 5 nm / s measured at low gas pressure is of great importance for applications in industrial single wafer processing.
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