TW201330086A - Etching apparatus - Google Patents
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本發明係關於一種蝕刻裝置,尤指一種蝕刻裝置。This invention relates to an etching apparatus, and more particularly to an etching apparatus.
按,蝕刻係為一種透過化學反應或物理撞擊的方式對於材料進行移除的技術,現有蝕刻技術大致可分為濕蝕刻(wet etching)及乾蝕刻(dry etching)兩類,其中濕蝕刻係透過化學溶液進行化學反應而達到蝕刻的效果,而乾蝕刻則是透過一種電漿蝕刻(plasma etching),電漿蝕刻可能是電漿中離子撞擊晶片表面的物理作用或者可能是電漿中活性自由基與晶片表面原子間的化學反應,也可能是兩者的複合作用,隨著科技的發展,蝕刻技術已廣泛地應用於航空、機械、化學及半導體製程上;目前業界所使用的蝕刻機台80的配置係如圖8所示,其主要係於中心處設置一機器手臂81,於該機器手臂81的周圍係依序環形間隔設置有數個傳送室82、一定位室83、數個反應室84及一清潔室85,透過該機器手臂81將晶圓90於各室間進行移動、定位及蝕刻加工;然而,現有蝕刻機台80雖可透過機器手臂81進行移動、定位及蝕刻加工,但機器手臂81於各室間進行移動需花費不少的時間,且機器手臂81經長時間的使用後,容易因磨耗或磨損而影響其操作的準確性,使晶圓90可能於移動的過程中發生掉落而毀損的情形,誠有加以改進之處。Etching is a technique for removing materials by chemical reaction or physical impact. The existing etching techniques can be roughly classified into wet etching and dry etching, in which wet etching is performed. The chemical solution chemically reacts to achieve the etching effect, while the dry etching is performed by a plasma etching. The plasma etching may be a physical action of ions in the plasma striking the surface of the wafer or may be active free radicals in the plasma. The chemical reaction with the atom on the surface of the wafer may also be a composite of the two. With the development of technology, etching technology has been widely used in aerospace, mechanical, chemical and semiconductor processes; currently used in the industry of etching machine 80 The configuration is as shown in FIG. 8 , which is mainly provided with a robot arm 81 at the center, and a plurality of transfer chambers 82 , a positioning chamber 83 and a plurality of reaction chambers 84 are arranged in the annular interval in sequence around the robot arm 81 . And a cleaning chamber 85, through which the wafer 90 is moved, positioned, and etched between the chambers; however, the existing etching machine 80 is transparent. The arm 81 is moved, positioned and etched, but it takes a lot of time for the robot arm 81 to move between the chambers, and the robot arm 81 is likely to be affected by wear or wear after being used for a long time. Sexuality, so that the wafer 90 may fall and be damaged during the movement process, there are improvements.
為了改善上述現有蝕刻機台透過機器手臂進行移動、定位及蝕刻加工的缺失及不足,本發明之主要目的在於提供一種蝕刻裝置,其係可使晶圓在不需設置機器手臂的情況下進行移動及加工,藉以提供一節省成本、縮短製程時間及提高產能之蝕刻裝置者。In order to improve the lack and deficiency of the above-mentioned existing etching machine moving, positioning and etching through the robot arm, the main object of the present invention is to provide an etching device which can move the wafer without setting a robot arm. And processing to provide an etching device that saves costs, shortens process time, and increases throughput.
基於上述目的,本發明之蝕刻裝置係包含有一蝕刻組、一輸送組及一載具組,其中:該蝕刻組係設有一蝕刻腔體、一上蓋板及一升降裝置,該上蓋板係可翻轉地設於該蝕刻腔體頂面且設有一電極導入裝置、兩氣孔板及一遮板,該電極導入裝置係固設於該上蓋板頂面且朝內設有一電極,兩氣孔板係間隔地設於該上蓋板底面,該遮板係間隔地設於該上蓋板底面且貫穿設有與該兩氣孔板相對應的穿孔,於兩穿孔間貫穿一供該電極伸入該遮板的開孔,該升降裝置係固設於該蝕刻腔體底面且朝上設有一伸入該蝕刻腔體的升降桿;該輸送組係設於該蝕刻組內且於該蝕刻腔體內間隔設置有複數個具有滾輪的轉動軸;以及該載具組係設於該輸送組上而可移動地設於該蝕刻腔體內並設有數個載盤,各載盤係與該輸送組的滾輪相貼靠且於頂面設有一極板,該極板係貫穿設有兩間隔設置並分別與該遮板兩穿孔相對應的承載孔。For the above purpose, the etching apparatus of the present invention comprises an etching group, a conveying group and a carrier set, wherein: the etching group is provided with an etching cavity, an upper cover and a lifting device, and the upper cover is Removably disposed on the top surface of the etching chamber and provided with an electrode introduction device, two air plate and a shutter, the electrode introduction device is fixed on the top surface of the upper cover and is provided with an electrode facing inward, and two air holes plate Separatingly disposed on the bottom surface of the upper cover plate, the shielding plates are spaced apart from the bottom surface of the upper cover plate and are provided with perforations corresponding to the two air hole plates, and a through hole is inserted between the two perforations An opening of the shielding plate, the lifting device is fixed on the bottom surface of the etching cavity and is provided with a lifting rod extending into the etching cavity; the conveying group is disposed in the etching group and spaced in the etching cavity a plurality of rotating shafts having rollers are disposed; and the carrier assembly is disposed on the transporting group and movably disposed in the etching chamber and is provided with a plurality of loading trays, each of which is coupled to the roller of the conveying group Abutting and having a plate on the top surface, the plate is running through There are two intervals and the bearing hole corresponding to the two perforated shutter.
進一步,該蝕刻裝置另設有一進料組、一出料組及一閥門組,其中該進料組係設有一前、後端呈開口狀且與該蝕刻腔體前端相結合的進料腔體,該出料組係設有一與該蝕刻腔體異於該進料腔體一端相結合的出料腔體,而該閥門組係設於該進料組、該蝕刻組及該出料組之間且設有數個閥門裝置,各閥門裝置係分別該設於各腔體之間,該輸送組於該進料組及該出料組的各腔體內間隔設置有複數個具有滾輪的轉動軸,該載具組係設於該輸送組上而可移動地設於各腔體之間。Further, the etching device further comprises a feeding group, a discharging group and a valve group, wherein the feeding group is provided with a feeding cavity which is open in front and rear end and combined with the front end of the etching cavity. The discharge group is provided with a discharge chamber which is different from the one end of the feed chamber, and the valve group is disposed in the feed group, the etching group and the discharge group. There are a plurality of valve devices, each of which is disposed between the respective cavities. The transport group is provided with a plurality of rotating shafts having rollers at intervals between the feeding group and the chambers of the discharging group. The carrier group is disposed on the transport group and movably disposed between the cavities.
較佳地,該進料腔體於內部兩側係各設有一第一導軌,該蝕刻腔體於內部兩側係各設有一與該進料腔體第一導軌直線相對的第二導軌,該升降裝置的升降桿係伸設於該蝕刻腔體內且介於兩第二導軌間,而該出料腔體於內部兩側係各設有一與該進料腔體第一導軌及該蝕刻腔體第二導軌直線相對的第三導軌,該輸送組的各滾動軸係設於各腔體的兩導軌內側。Preferably, the feeding chamber is provided with a first guide rail on each side of the inner portion, and the etching chamber body is respectively provided with a second guide rail linearly opposite to the first guide rail of the feeding cavity on the inner side. The lifting rod of the lifting device extends in the etching chamber and is interposed between the two second rails, and the discharging chamber is provided with a first rail and the etching chamber on the inner side of the feeding chamber. The second guide rails are linearly opposed to each other, and the rolling shafts of the transport group are disposed inside the two guide rails of the respective cavities.
較佳地,該上蓋板於該遮板周圍的底面設有複數個定位桿,各定位桿在異於該上蓋板的底端係設有一套設蓋,而該載具組的各載盤係於該極板周圍的頂面設有數個定位凸粒,當該載盤移動至該蝕刻腔體內時,各定位凸粒係與該蝕刻組各定位桿的套設蓋直線相對。Preferably, the upper cover is provided with a plurality of positioning rods on the bottom surface of the shielding plate, and each positioning rod is provided with a set of cover at a bottom end different from the upper cover, and each of the carrier groups is loaded. The top surface of the disk around the plate is provided with a plurality of positioning protrusions. When the carrier moves into the etching cavity, each positioning protrusion is linearly opposite to the sleeve of each positioning rod of the etching group.
較佳地,該上蓋板於兩相對側邊係分別設有一與該蝕刻腔體頂面相固設結合的翻轉壓缸軸,使該上蓋體可相對該蝕刻腔體翻轉,且該上蓋板於頂面係固設有一與該電極導入裝置相連接的輸出功率單元。Preferably, the upper cover is respectively provided with a reverse cylinder shaft fixedly coupled to the top surface of the etching cavity on the opposite side edges, so that the upper cover body can be turned over with respect to the etching cavity, and the upper cover plate An output power unit connected to the electrode introduction device is fixed to the top surface.
較佳地,該兩氣孔板分別於該上蓋板頂面設有一用以輸送氣體的輸送管,使氣體可經由輸送管及氣孔板而進入該蝕刻腔體內。Preferably, the two air venting plates are respectively provided with a conveying pipe for conveying gas on the top surface of the upper cover plate, so that gas can enter the etching cavity through the conveying pipe and the air venting plate.
較佳地,該遮板係設有數個與該上蓋板相固設結合的固定桿,使該遮板間隔地設於該上蓋板的底面。Preferably, the shutter is provided with a plurality of fixing rods fixedly coupled with the upper cover plate, so that the shielding plates are spaced apart from the bottom surface of the upper cover plate.
較佳地,該蝕刻組另設有一與該蝕刻腔體相結合的高真空泵浦,使該蝕刻腔體內部維持於一高真空的狀態。Preferably, the etching group is further provided with a high vacuum pump combined with the etching chamber to maintain the interior of the etching chamber in a high vacuum state.
較佳地,各閥門裝置係設有一閥門及一閥門氣壓缸,透過閥門氣壓缸的作動,使兩相鄰腔體間呈現相通或封閉的狀態,而該輸送組各轉動軸的一端係套設有一傳動輪,該傳動輪可為一鏈輪或一皮帶輪。Preferably, each valve device is provided with a valve and a valve pneumatic cylinder. The operation of the pneumatic cylinder of the valve causes the two adjacent cavities to be in a connected or closed state, and one end of each rotating shaft of the transporting group is sleeved. There is a transmission wheel, which can be a sprocket or a pulley.
較佳地,該蝕刻裝置在異於該蝕刻腔體的出料腔體一側設有一清潔腔體,藉以對於蝕刻後的晶圓進行表面清洗。Preferably, the etching device is provided with a cleaning cavity on a side of the discharge cavity different from the etching cavity, thereby performing surface cleaning on the etched wafer.
藉由上述的技術手段,本發明蝕刻裝置於操作時係於各腔體內分別設置一載盤,讓各腔體可於同一時段中對於各晶圓進行不同的加工步驟,即可於本發明的蝕刻裝置上進行的晶圓加工流程,讓各晶圓依序且連續地於各腔體內進行加工,而不需再透過機器手臂的夾持及移動,即可形成一條龍的的生產線,不僅可提高產能且縮短製程時間,且晶圓係透過各載盤而於各腔體間上進行輸送,可有效避免晶圓可能於移動的過程中發生掉落而毀損的現象,進而達到節省成本的效果,藉以構成一節省成本、縮短製程時間及提高產能的蝕刻裝置者。According to the above technical means, the etching apparatus of the present invention is provided with a carrier in each cavity during operation, so that each cavity can perform different processing steps for each wafer in the same period, which can be used in the present invention. The wafer processing process performed on the etching device allows each wafer to be processed sequentially and continuously in each cavity, without the need of clamping and moving by the robot arm, thereby forming a one-stop production line, not only Increasing productivity and shortening process time, and the wafers are transported between the chambers through the respective carriers, which can effectively prevent the wafer from falling and being damaged during the moving process, thereby achieving cost-saving effect. In order to form an etching device that saves cost, shortens process time and increases productivity.
為能詳細瞭解本發明的技術特徵及實用功效,並可依照說明書的內容來實施,玆進一步以如圖式所示的較佳實施例,詳細說明如后:本發明主要係提供一種蝕刻裝置,請配合參看如圖1至3所示,由圖中可看出本發明蝕刻裝置,其係設有一進料組10、一蝕刻組20、一出料組30、一閥門組40、一輸送組50及一載具組60,其中:該進料組10係設有一進料腔體11,該進料腔體11係為一略呈長方形的中空腔體,該進料腔體11的前、後端係各呈一開口狀,該進料腔體11於內部兩側係各設有一第一導軌111,進一步,該進料組10係與一真空泵浦(圖未示)相連接,藉以使該進料腔體11維持一真空狀態;請進一步配合參看如圖4及5所示,該蝕刻組20係與該進料組10相結合且設有一蝕刻腔體21、一上蓋板22及一升降裝置23,其中該蝕刻腔體21係呈一與該進料腔體11結構相符合的中空腔體,該蝕刻腔體21係與該進料腔體11的後端相固設結合且於內部兩側係各設有一與該進料腔體11第一導軌111直線相對的第二導軌211,該上蓋板22係可翻轉地設於該蝕刻腔體21的頂面且設有一電極導入裝置24、兩氣孔板25、一遮板26及複數個定位桿27,較佳地,該上蓋板22於兩相對側邊係分別設有一與該蝕刻腔體21頂面相固設結合的翻轉壓缸軸221,該電極導入裝置24係固設於該上蓋板22的頂面且朝內伸設有一電極241,進一步,該上蓋板22於頂面係固設有一與該電極導入裝置24相連接的輸出功率單元28,該輸出功率單元28係設有一射頻電源供應器、一中頻電源供應器及一用以調整輸出功率大小的匹配器;兩氣孔板25係間隔地設於該上蓋板22的底面且分別於該上蓋板22頂面設有一用以輸送氣體的輸送管251,使氣體可經由輸送管251及氣孔板25而進入該蝕刻腔體21內,該遮板26係設有數個與該上蓋板22相固設結合的固定桿261,使該遮板26間隔地設於該上蓋板22的底面,該遮板26係貫穿設有與該兩氣孔板25相對應的穿孔262,且與兩穿孔262間係貫穿設有一供該電極241伸入該遮板26的開孔263,各定位桿27係與該上蓋板22的底面相固設結合而位於該遮板26的周圍,各定位桿27在異於該上蓋板22的底端係設有一套設蓋271,較佳地,該套設蓋271係凹設有一略呈半圓形的定位孔272;進一步,該蝕刻組20另設有一與該蝕刻腔體21相結合的高真空泵浦29,使該蝕刻腔體21內部維持於一高真空的狀態,且可於該蝕刻腔體21內設置至少一位置感測器,該升降裝置23係固設於該蝕刻腔體21的底面且朝上設有一伸設於該蝕刻腔體21內且介於兩第二導軌211間的升降桿231;該出料組30係與該蝕刻組20相連接且設有一出料腔體31,該出料腔體31係與該蝕刻腔體21異於該進料腔體11的一端相結合,且於內部兩側係各設有一與該進料腔體11第一導軌111及該蝕刻腔體21第二導軌211直線相對的第三導軌311;該閥門組40係設於該進料組10、該蝕刻組20及該出料組30之間且設有數個閥門裝置41,各閥門裝置41係分別該設於各腔體11,21,31之間且設有一閥門42及一閥門氣壓缸43,透過閥門氣壓缸43的作動,使兩相鄰腔體11,21,31間呈現相通或封閉的狀態;該輸送組50係設於該進料組10、該蝕刻組20及該出料組30之間且於各腔體11,21,31的兩導軌111,211,311內側分別間隔設置有複數個具有滾輪52的轉動軸51,各轉動軸51的一端係套設有一傳動輪53,其中各傳動輪53可為一鏈輪一皮帶輪,進而可透過一鏈條或一皮帶而使各轉動軸51相對腔體11,21,31產生轉動;以及該載具組60係設於該輸送組50上而可移動地設於各腔體11,21,31之間並設有數個載盤61,各載盤61係與該輸送組50的滾輪52相貼靠且設有一極板62及數個定位凸粒63,其中該極板62係設於該載盤61的頂面且貫穿設有兩間隔設置並分別與該遮板26兩穿孔262相對應的承載孔621,該極板62的各承載孔621係用以置放一晶圓70,各定位凸粒63係設於該載盤61的頂面而位於該極板的62周圍,且當該載盤61移動至該蝕刻腔體21內時,各定位凸粒63係與該蝕刻組20各定位桿27的套設蓋271直線相對。In order to understand the technical features and practical effects of the present invention in detail, and in accordance with the contents of the specification, the present invention will be further described in detail with reference to the preferred embodiments shown in the drawings. Please refer to FIG. 1 to FIG. 3, which can be seen from the figure, which is provided with a feeding group 10, an etching group 20, a discharging group 30, a valve group 40, and a conveying group. 50 and a carrier set 60, wherein: the feed set 10 is provided with a feed cavity 11 which is a slightly rectangular hollow cavity, the front of the feed cavity 11 Each of the rear end portions has an opening shape, and the feeding chamber 11 is provided with a first guide rail 111 on both sides of the inner portion. Further, the feeding group 10 is connected to a vacuum pump (not shown), thereby The feeding chamber 11 maintains a vacuum state; further, as shown in FIGS. 4 and 5, the etching group 20 is combined with the feeding group 10 and is provided with an etching chamber 21, an upper cover 22, and a lifting device 23, wherein the etching cavity 21 is in a hollow cavity conforming to the structure of the feeding cavity 11 The etching chamber 21 is fixedly coupled to the rear end of the feeding chamber 11 and is provided on the inner side with a second rail 211 linearly opposite to the first rail 111 of the feeding chamber 11 . The cover plate 22 is reversibly disposed on the top surface of the etching cavity 21 and is provided with an electrode introduction device 24, two air plate 25, a shutter 26 and a plurality of positioning rods 27. Preferably, the upper cover 22 The inverting cylinder shaft 221 is fixedly disposed on the top surface of the etching chamber 21, and the electrode guiding device 24 is fixed on the top surface of the upper cover 22 and extends inwardly. The electrode 241, further, the top cover 22 is fixed on the top surface with an output power unit 28 connected to the electrode introduction device 24, and the output power unit 28 is provided with an RF power supply and an intermediate frequency power supply. And a matching device for adjusting the magnitude of the output power; the two air venting plates 25 are spaced apart from the bottom surface of the upper cover plate 22, and respectively disposed on the top surface of the upper cover plate 22 is a conveying pipe 251 for conveying gas, so that The gas can enter the etching cavity 21 through the conveying pipe 251 and the air plate 25, and the shielding plate 26 is The fixing rods 261 are fixedly coupled to the upper cover plate 22, and the shielding plates 26 are spaced apart from the bottom surface of the upper cover plate 22. The shielding plate 26 is disposed through the two air venting plates 25 Corresponding perforations 262, and an opening 263 for the electrode 241 to extend into the shutter 26 is disposed through the two through holes 262. The positioning rods 27 are fixedly coupled to the bottom surface of the upper cover 22. A cover 271 is disposed on each of the positioning rods 27 at a position different from the bottom end of the upper cover 22. Preferably, the sleeve 271 is recessed with a semi-circular positioning hole. Further, the etching group 20 is further provided with a high vacuum pump 29 combined with the etching cavity 21 to maintain the interior of the etching cavity 21 in a high vacuum state, and can be disposed in the etching cavity 21 At least one position sensor, the lifting device 23 is fixed on the bottom surface of the etching chamber 21 and is provided with a lifting rod 231 extending in the etching chamber 21 and interposed between the two second rails 211; The discharge group 30 is connected to the etching group 20 and is provided with a discharge chamber 31, which is different from the etching chamber 21 One end of the body 11 is combined, and a third rail 311 is formed on each of the two sides of the feed chamber 11 and the second rail 211 of the etching chamber 21; the valve group 40 is The valve unit 10 is disposed between the feeding group 10, the etching group 20 and the discharging group 30, and is provided with a plurality of valve devices 41. The valve devices 41 are respectively disposed between the chambers 11, 21, 31 and provided with a valve unit 41. The valve 42 and a valve pneumatic cylinder 43 are moved through the valve pneumatic cylinder 43 to bring the two adjacent chambers 11, 21, 31 into an open or closed state; the transport group 50 is disposed in the feeding group 10, the A plurality of rotating shafts 51 having rollers 52 are disposed at intervals between the etching group 20 and the discharging group 30 and on the inner sides of the two guide rails 111, 211, 311 of the respective cavities 11, 21, 31, and one end of each rotating shaft 51 The sleeve is provided with a transmission wheel 53, wherein each of the transmission wheels 53 can be a sprocket-pulley, and the rotation shaft 51 can be rotated relative to the cavity 11, 21, 31 through a chain or a belt; and the carrier The group 60 is disposed on the transport group 50 and is movably disposed between the cavities 11, 21, 31 and provided with a plurality of carriers 61, each of which is provided The carrier 61 is abutted against the roller 52 of the transport group 50 and is provided with a plate 62 and a plurality of positioning protrusions 63. The plate 62 is disposed on the top surface of the carrier 61 and is provided with two spaces. Each of the bearing holes 621 of the plate 62 is disposed to receive a wafer 70, and each positioning protrusion 63 is disposed on the carrier 61. The top surface is located around the plate 62, and when the carrier 61 moves into the etching cavity 21, each positioning protrusion 63 is linearly opposed to the sleeve cover 271 of each positioning rod 27 of the etching group 20.
請配合參看如圖7所示,本發明蝕刻裝置另在異於該蝕刻腔體21的出料腔體31一側設有一清潔腔體32,藉以對於蝕刻後的晶圓70進行表面清洗,提供一清潔的效果。Referring to FIG. 7 , the etching apparatus of the present invention further provides a cleaning cavity 32 on the side of the discharge cavity 31 different from the etching cavity 21 , thereby performing surface cleaning on the etched wafer 70 . A clean effect.
本發明蝕刻裝置於使用時,請配合參看如圖3及5所示,其係先將欲加工的晶圓70置放於載盤61的極板62承載孔621內,將該載盤61放入位於該進料腔體11的各滾輪52上,經由一真空泵浦對於該進料腔體11進行充氣,藉以使該進料腔體11呈現一真空狀態,待該進料腔體11呈現一真空狀態後,透過開啟位於該進料腔體11及該蝕刻腔體21間的閥門裝置41,以及該輸送組50轉動軸轉動的方式,如圖4所示由各滾輪52將位於該進料腔體11的載盤61移動至該蝕刻腔體21內,此時,可透過位置感測器感應的方式,使該載盤61上的各定位凸粒63與各定位桿27的套設蓋271直線相對;如圖6所示透過該升降裝置23升降桿231上升的方式,將位於該蝕刻腔體21內的載盤61朝該上蓋板22方向推升,使各定位凸粒63置於相對應定位桿27的定位孔272中,且讓位於該極板62上的兩晶圓70分別靠近位於該上蓋板22上遮板26的兩穿孔262處,此時,將一蝕刻所需使用的氣體經各輸送管251極相對應的氣孔板25而輸送至該蝕刻腔體21內,並且經由該輸出功率單元28啟動該電極導入裝置24的方式,使位於該蝕刻腔體21內的氣體受到強電場的作用,而形成一部份解離氣體(Partially Ionized Gas),即可對於設置在極板62上的各晶圓70進行電漿蝕刻(Plasma Etching);待各晶圓70完成蝕刻加工後,經由該升降桿231下降至初始位置的方式,使各定位凸粒63與相對應的定位桿27相分離,讓該載盤61可與位於該蝕刻腔體21內的各滾輪52相貼靠,並透過開啟位於該蝕刻腔體21及該出料腔體31間的閥門裝置41,使該經蝕刻完的晶圓70隨著載盤61移動至該出料腔體31處進行出料,另可如圖7所示,將由該出料腔體31送出的晶圓70輸送至該清潔腔體32中進行清潔,即完成晶圓70的蝕刻加工。When the etching apparatus of the present invention is used, please refer to FIG. 3 and FIG. 5, which firstly places the wafer 70 to be processed into the bearing hole 621 of the electrode plate 62 of the carrier 61, and places the carrier 61. The feeding chamber 11 is inflated via a vacuum pump, so that the feeding chamber 11 assumes a vacuum state, and the feeding chamber 11 presents a vacuum. After the vacuum state, by opening the valve device 41 between the feeding chamber 11 and the etching chamber 21, and the rotation of the rotating shaft of the conveying group 50, the rollers 52 are located at the feeding as shown in FIG. The carrier 61 of the cavity 11 is moved into the etching cavity 21. At this time, the positioning protrusions 63 on the carrier 61 and the positioning caps of the positioning rods 27 can be inductively sensed by the position sensor. 271 is in a straight line; as shown in FIG. 6, the lifting rod 231 is raised by the lifting device 23, and the carrier 61 located in the etching chamber 21 is pushed up toward the upper cover 22, so that the positioning projections 63 are placed. In the positioning hole 272 of the corresponding positioning rod 27, and the two wafers 70 located on the electrode plate 62 are respectively located near the upper cover 2 2 at the two through holes 262 of the upper shutter 26, at this time, a gas required for an etching is transported into the etching cavity 21 through the corresponding orifice plate 25 of each of the conveying tubes 251, and via the output power unit 28, the electrode introduction device 24 is activated in such a manner that the gas located in the etching cavity 21 is subjected to a strong electric field to form a partially Ionized Gas, that is, for each of the electrodes disposed on the electrode plate 62. The wafer 70 is subjected to plasma etching (Plasma Etching); after each wafer 70 is etched, the positioning bumps 63 are separated from the corresponding positioning rods 27 by the lifting rod 231 descending to the initial position. The carrier 61 can be placed against the rollers 52 located in the etching chamber 21, and the etched portion can be opened by opening the valve device 41 between the etching chamber 21 and the discharge chamber 31. The wafer 70 is discharged to the discharge chamber 31 as the carrier 61 is moved. Alternatively, as shown in FIG. 7, the wafer 70 sent from the discharge chamber 31 is transported to the cleaning chamber 32. Cleaning, that is, etching of the wafer 70 is completed.
上述係單一載盤61上晶圓70的蝕刻加工流程,於實際操作時係於各腔體11,21,31,32內分別設置一載盤61,讓各腔體11,21,31,32可於同一時段中對於各晶圓70進行不同的加工步驟,即可於本發明的蝕刻裝置上進行的晶圓70加工流程,讓各晶圓70依序且連續地於各腔體11,21,31,32內進行加工,而不需再透過機器手臂81的夾持及移動,即可形成一條龍的的生產線,不僅可提高產能且縮短製程時間,且晶圓70係透過各載盤61而於各腔體11,21,31,32間上進行輸送,可有效避免晶圓70可能於移動的過程中發生掉落而毀損的現象,進而達到節省成本的效果,藉以構成一節省成本、縮短製程時間及提高產能的蝕刻裝置者。The etching process of the wafer 70 on the single carrier 61 is generally provided in each of the cavities 11, 21, 31, 32 to provide a carrier 61 for each cavity 11, 21, 31, 32. Different processing steps can be performed for each wafer 70 in the same period of time, that is, the wafer 70 processing flow performed on the etching apparatus of the present invention, so that the wafers 70 are sequentially and continuously in the respective chambers 11, 21 Processing in 31, 32, without the need to clamp and move through the robot arm 81, a one-stop production line can be formed, which not only increases productivity but also shortens the processing time, and the wafer 70 passes through the respective trays 61. The transportation between the chambers 11, 21, 31, 32 can effectively prevent the wafer 70 from falling and being damaged during the moving process, thereby achieving a cost-saving effect, thereby constituting a cost saving, An etching device that shortens the process time and increases productivity.
以上所述,僅是本發明的較佳實施例,並非對本發明作任何形式上的限制,任何所屬技術領域中具有通常知識者,若在不脫離本發明所提技術方案的範圍內,利用本發明所揭示技術內容所作出局部更動或修飾的等效實施例,並且未脫離本發明的技術方案內容,均仍屬於本發明技術方案的範圍內。The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can use the present invention without departing from the scope of the present invention. Equivalent embodiments of the invention may be made without departing from the technical scope of the present invention.
10...進料組10. . . Feeding group
11...進料腔體11. . . Feed cavity
111...第一導軌111. . . First rail
20...蝕刻組20. . . Etching group
21...蝕刻腔體twenty one. . . Etching chamber
211...第二導軌211. . . Second rail
22...上蓋板twenty two. . . Upper cover
221...翻轉壓缸軸221. . . Flip cylinder shaft
23...升降裝置twenty three. . . Lifting device
231...升降桿231. . . Lifting rod
24...電極導入裝置twenty four. . . Electrode introduction device
241...電極241. . . electrode
25...氣孔板25. . . Pore plate
251...輸送管251. . . Duct
26...遮板26. . . Shutter
261...固定桿261. . . Fixed rod
262...穿孔262. . . perforation
263...開孔263. . . Opening
27...定位桿27. . . Positioning rod
271...套設蓋271. . . Cover
272...定位孔272. . . Positioning hole
28...輸出功率單元28. . . Output power unit
29...高真空泵浦29. . . High vacuum pump
30...出料組30. . . Discharge group
31...出料腔體31. . . Discharge chamber
311...第三導軌311. . . Third rail
32...清潔腔體32. . . Cleaning cavity
40...閥門組40. . . Valve group
41...閥門裝置41. . . Valve device
42...閥門42. . . valve
43...閥門氣壓缸43. . . Valve pneumatic cylinder
50...輸送組50. . . Transport group
51...轉動軸51. . . Rotary axis
52...滾輪52. . . Wheel
53...傳動輪53. . . Drive wheel
60...載具組60. . . Vehicle group
61...載盤61. . . Carrier
62...極板62. . . Plate
621...承載孔621. . . Carrying hole
63...定位凸粒63. . . Positioning bump
70...晶圓70. . . Wafer
80...蝕刻機台80. . . Etching machine
81...機器手臂81. . . Robotic arm
82...傳送室82. . . Transfer room
83...定位室83. . . Positioning room
84...反應室84. . . Reaction chamber
85...清潔室85. . . Clean room
90...晶圓90. . . Wafer
圖1係本發明蝕刻裝置第一實施例之外觀立體示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view showing the appearance of a first embodiment of an etching apparatus of the present invention.
圖2係本發明蝕刻裝置第一實施例之另一外觀立體示意圖。2 is another perspective view showing the appearance of the first embodiment of the etching apparatus of the present invention.
圖3係本發明蝕刻裝置第一實施例之剖面側視示意圖。Figure 3 is a cross-sectional side elevational view of a first embodiment of the etching apparatus of the present invention.
圖4係本發明蝕刻裝置第一實施例之局部放大剖面側視示意圖。Figure 4 is a partially enlarged cross-sectional side elevational view of the first embodiment of the etching apparatus of the present invention.
圖5係本發明蝕刻裝置蝕刻組之立體外觀示意圖。FIG. 5 is a schematic perspective view showing the etching apparatus of the etching apparatus of the present invention.
圖6係本發明蝕刻裝置第一實施例之操作剖面側視示意圖。Figure 6 is a side elevational view showing the operation of the first embodiment of the etching apparatus of the present invention.
圖7係本發明蝕刻裝置第二實施例之外觀立體示意圖。Figure 7 is a perspective view showing the appearance of a second embodiment of the etching apparatus of the present invention.
圖8係現有蝕刻機台之俯視示意圖。Figure 8 is a top plan view of a conventional etching machine.
10...進料組10. . . Feeding group
11...進料腔體11. . . Feed cavity
20...蝕刻組20. . . Etching group
21...蝕刻腔體twenty one. . . Etching chamber
22...上蓋板twenty two. . . Upper cover
24...電極導入裝置twenty four. . . Electrode introduction device
28...輸出功率單元28. . . Output power unit
29...高真空泵浦29. . . High vacuum pump
30...出料組30. . . Discharge group
31...出料腔體31. . . Discharge chamber
40...閥門組40. . . Valve group
41...閥門裝置41. . . Valve device
42...閥門42. . . valve
43...閥門氣壓缸43. . . Valve pneumatic cylinder
Claims (10)
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TW101100462A TW201330086A (en) | 2012-01-05 | 2012-01-05 | Etching apparatus |
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TW101100462A TW201330086A (en) | 2012-01-05 | 2012-01-05 | Etching apparatus |
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