JPS6468475A - Vapor growth method for organic metal - Google Patents

Vapor growth method for organic metal

Info

Publication number
JPS6468475A
JPS6468475A JP22476087A JP22476087A JPS6468475A JP S6468475 A JPS6468475 A JP S6468475A JP 22476087 A JP22476087 A JP 22476087A JP 22476087 A JP22476087 A JP 22476087A JP S6468475 A JPS6468475 A JP S6468475A
Authority
JP
Japan
Prior art keywords
reaction
compd
gas
gaseous
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22476087A
Other languages
Japanese (ja)
Other versions
JP2631848B2 (en
Inventor
Masayoshi Umeno
Shiro Sakai
Masami Naito
Hiroyuki Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP22476087A priority Critical patent/JP2631848B2/en
Publication of JPS6468475A publication Critical patent/JPS6468475A/en
Application granted granted Critical
Publication of JP2631848B2 publication Critical patent/JP2631848B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the danger of constantly preserving toxic gaseous PH3 by generating the PH3 which is the toxic gas by red phosphorus and hydrogen plasma at the time of forming a thin film of InP, etc., by bringing the PH3 and the org. metal compd. of group 3 of periodic table such as (CH3)3In into reaction. CONSTITUTION:Gaseous H2 is fed to a bubbling device 2 of the org. metal compd. of group III of periodic table such as (CH3)3In, (CH3)3Ga and [(CH3)3Al]2 to bubble the compd. and the gas of 1 kind of said compd. is supplied to a reaction tube 3. The red phosphorus 14 in a housing pipe 11 is simultaneous heated to 400-420 by a heater 13 and while microwaves are projected by a resonator 12 orthogonal with the housing pipe 11, the gaseous H2 is supplied from a gas inlet 11. The red phosphorus and H2 are brought into reaction by the hydrogen plasma generated in such a manner to generate the PH3 which is then supplied to the reaction tube 3. The thin film of InP, GaP, GaInP, AlGaP, etc., is easily formed by the reaction of the PH3 and the above- mentioned org. metal compd. on the surface of the substrate in the reaction tube 3. Since the toxic PH3 of the raw material is generated at every use, the danger of constantly preserving this gas is eliminated.
JP22476087A 1987-09-08 1987-09-08 Metalorganic vapor phase epitaxy Expired - Fee Related JP2631848B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22476087A JP2631848B2 (en) 1987-09-08 1987-09-08 Metalorganic vapor phase epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22476087A JP2631848B2 (en) 1987-09-08 1987-09-08 Metalorganic vapor phase epitaxy

Publications (2)

Publication Number Publication Date
JPS6468475A true JPS6468475A (en) 1989-03-14
JP2631848B2 JP2631848B2 (en) 1997-07-16

Family

ID=16818802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22476087A Expired - Fee Related JP2631848B2 (en) 1987-09-08 1987-09-08 Metalorganic vapor phase epitaxy

Country Status (1)

Country Link
JP (1) JP2631848B2 (en)

Also Published As

Publication number Publication date
JP2631848B2 (en) 1997-07-16

Similar Documents

Publication Publication Date Title
US5151296A (en) Method for forming polycrystalline film by chemical vapor deposition process
DE69305985T2 (en) PROCESS FOR THE PRODUCTION OF SOOT AND APPROPRIATE DECOMPOSITION REACTOR
JPS6448421A (en) Ashing method
MY116011A (en) A method for flame stabilization in a process for preparing synthesis gas
CA1269061C (en) Process for the production of diamond-like carbon coatings
EP0936284A3 (en) Method and apparatus for producing thin films
JPS6417870A (en) Manufacture of carbon
SE9801190D0 (en) A method and a device for epitaxial growth of objects by Chemical Vapor Deposition
JPS6461396A (en) Synthesis of diamond and installation therefor
CA2091665A1 (en) Process for the synthesis of fullerenes
IL84526A (en) Condensate diamond,apparatus and process for producing same
JPS6468475A (en) Vapor growth method for organic metal
KR900014623A (en) Deposition method of tantalum oxide film and chemical vapor deposition system used therein
JPS5713746A (en) Vapor-phase growing apparatus
JPS5719034A (en) Vapor growth apparatus
JPS56158143A (en) Reduced pressure type vapor phase growing device
JPS55102237A (en) Method and apparatus for plasma processing
JPS6442393A (en) Method for synthesizing diamond
JPS6447028A (en) Plasma device
JPS6481214A (en) Vapor growth apparatus
JPS6447869A (en) Thin film forming method
JPS5767017A (en) Manufacture of thin silicon film
JPS5518077A (en) Device for growing film under gas
JPS56120600A (en) Vapor phase growing method
JPS5773175A (en) Chemical vapor deposition device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees