JPS6468475A - Vapor growth method for organic metal - Google Patents
Vapor growth method for organic metalInfo
- Publication number
- JPS6468475A JPS6468475A JP22476087A JP22476087A JPS6468475A JP S6468475 A JPS6468475 A JP S6468475A JP 22476087 A JP22476087 A JP 22476087A JP 22476087 A JP22476087 A JP 22476087A JP S6468475 A JPS6468475 A JP S6468475A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- compd
- gas
- gaseous
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent the danger of constantly preserving toxic gaseous PH3 by generating the PH3 which is the toxic gas by red phosphorus and hydrogen plasma at the time of forming a thin film of InP, etc., by bringing the PH3 and the org. metal compd. of group 3 of periodic table such as (CH3)3In into reaction. CONSTITUTION:Gaseous H2 is fed to a bubbling device 2 of the org. metal compd. of group III of periodic table such as (CH3)3In, (CH3)3Ga and [(CH3)3Al]2 to bubble the compd. and the gas of 1 kind of said compd. is supplied to a reaction tube 3. The red phosphorus 14 in a housing pipe 11 is simultaneous heated to 400-420 by a heater 13 and while microwaves are projected by a resonator 12 orthogonal with the housing pipe 11, the gaseous H2 is supplied from a gas inlet 11. The red phosphorus and H2 are brought into reaction by the hydrogen plasma generated in such a manner to generate the PH3 which is then supplied to the reaction tube 3. The thin film of InP, GaP, GaInP, AlGaP, etc., is easily formed by the reaction of the PH3 and the above- mentioned org. metal compd. on the surface of the substrate in the reaction tube 3. Since the toxic PH3 of the raw material is generated at every use, the danger of constantly preserving this gas is eliminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22476087A JP2631848B2 (en) | 1987-09-08 | 1987-09-08 | Metalorganic vapor phase epitaxy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22476087A JP2631848B2 (en) | 1987-09-08 | 1987-09-08 | Metalorganic vapor phase epitaxy |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6468475A true JPS6468475A (en) | 1989-03-14 |
JP2631848B2 JP2631848B2 (en) | 1997-07-16 |
Family
ID=16818802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22476087A Expired - Fee Related JP2631848B2 (en) | 1987-09-08 | 1987-09-08 | Metalorganic vapor phase epitaxy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2631848B2 (en) |
-
1987
- 1987-09-08 JP JP22476087A patent/JP2631848B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2631848B2 (en) | 1997-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |