JPS55113329A - Light dry etching - Google Patents
Light dry etchingInfo
- Publication number
- JPS55113329A JPS55113329A JP1976479A JP1976479A JPS55113329A JP S55113329 A JPS55113329 A JP S55113329A JP 1976479 A JP1976479 A JP 1976479A JP 1976479 A JP1976479 A JP 1976479A JP S55113329 A JPS55113329 A JP S55113329A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wafer
- etching
- dry etching
- react
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To operate effective etching by causing a gas to react with a solid under the exposure to light.
CONSTITUTION: Si wafer 2 is enclosed in quartz container 1, into which HCl gas is introduced. While the wafer is being heated, the surface of the wafer is exposed to white-color light. Then, due to the decomposition of HCl gas by light, Cl and Si react with each other and SiCl4 is produced, and thereby the wafer surface is etched. As light source, visible light, infrared light and ultraviolet light can be used. When the intensity of light and the time of exposure are controlled corresponding to the kind of dry etching or the depth of etching, effective etching can be operated.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976479A JPS55113329A (en) | 1979-02-23 | 1979-02-23 | Light dry etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976479A JPS55113329A (en) | 1979-02-23 | 1979-02-23 | Light dry etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113329A true JPS55113329A (en) | 1980-09-01 |
Family
ID=12008397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1976479A Pending JPS55113329A (en) | 1979-02-23 | 1979-02-23 | Light dry etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113329A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
JPS5933830A (en) * | 1982-08-20 | 1984-02-23 | Toshiba Corp | Dry etching |
JPS5986222A (en) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | Dry etching method |
JPS59155935A (en) * | 1983-02-25 | 1984-09-05 | Agency Of Ind Science & Technol | Forming method of pattern by using plasma |
US4478677A (en) * | 1983-12-22 | 1984-10-23 | International Business Machines Corporation | Laser induced dry etching of vias in glass with non-contact masking |
JPS59194436A (en) * | 1983-04-20 | 1984-11-05 | Kokusai Electric Co Ltd | Dry etching method and device therefor |
JPS6016416A (en) * | 1983-07-08 | 1985-01-28 | Hitachi Ltd | Vapor growth apparatus |
JPS6134926A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing device of semiconductor single crystal |
US4668337A (en) * | 1984-09-21 | 1987-05-26 | Kabushiki Kaisha Toshiba | Dry-etching method and apparatus therefor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130370A (en) * | 1974-04-01 | 1975-10-15 |
-
1979
- 1979-02-23 JP JP1976479A patent/JPS55113329A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130370A (en) * | 1974-04-01 | 1975-10-15 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
JPS5933830A (en) * | 1982-08-20 | 1984-02-23 | Toshiba Corp | Dry etching |
JPS5986222A (en) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | Dry etching method |
JPS59155935A (en) * | 1983-02-25 | 1984-09-05 | Agency Of Ind Science & Technol | Forming method of pattern by using plasma |
JPH0526329B2 (en) * | 1983-02-25 | 1993-04-15 | Kogyo Gijutsuin | |
JPS59194436A (en) * | 1983-04-20 | 1984-11-05 | Kokusai Electric Co Ltd | Dry etching method and device therefor |
JPS6016416A (en) * | 1983-07-08 | 1985-01-28 | Hitachi Ltd | Vapor growth apparatus |
US4478677A (en) * | 1983-12-22 | 1984-10-23 | International Business Machines Corporation | Laser induced dry etching of vias in glass with non-contact masking |
JPS6134926A (en) * | 1984-07-26 | 1986-02-19 | Res Dev Corp Of Japan | Growing device of semiconductor single crystal |
US4668337A (en) * | 1984-09-21 | 1987-05-26 | Kabushiki Kaisha Toshiba | Dry-etching method and apparatus therefor |
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