JPS55113329A - Light dry etching - Google Patents

Light dry etching

Info

Publication number
JPS55113329A
JPS55113329A JP1976479A JP1976479A JPS55113329A JP S55113329 A JPS55113329 A JP S55113329A JP 1976479 A JP1976479 A JP 1976479A JP 1976479 A JP1976479 A JP 1976479A JP S55113329 A JPS55113329 A JP S55113329A
Authority
JP
Japan
Prior art keywords
light
wafer
etching
dry etching
react
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1976479A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1976479A priority Critical patent/JPS55113329A/en
Publication of JPS55113329A publication Critical patent/JPS55113329A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To operate effective etching by causing a gas to react with a solid under the exposure to light.
CONSTITUTION: Si wafer 2 is enclosed in quartz container 1, into which HCl gas is introduced. While the wafer is being heated, the surface of the wafer is exposed to white-color light. Then, due to the decomposition of HCl gas by light, Cl and Si react with each other and SiCl4 is produced, and thereby the wafer surface is etched. As light source, visible light, infrared light and ultraviolet light can be used. When the intensity of light and the time of exposure are controlled corresponding to the kind of dry etching or the depth of etching, effective etching can be operated.
COPYRIGHT: (C)1980,JPO&Japio
JP1976479A 1979-02-23 1979-02-23 Light dry etching Pending JPS55113329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1976479A JPS55113329A (en) 1979-02-23 1979-02-23 Light dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1976479A JPS55113329A (en) 1979-02-23 1979-02-23 Light dry etching

Publications (1)

Publication Number Publication Date
JPS55113329A true JPS55113329A (en) 1980-09-01

Family

ID=12008397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1976479A Pending JPS55113329A (en) 1979-02-23 1979-02-23 Light dry etching

Country Status (1)

Country Link
JP (1) JPS55113329A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
JPS5933830A (en) * 1982-08-20 1984-02-23 Toshiba Corp Dry etching
JPS5986222A (en) * 1982-11-10 1984-05-18 Toshiba Corp Dry etching method
JPS59155935A (en) * 1983-02-25 1984-09-05 Agency Of Ind Science & Technol Forming method of pattern by using plasma
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking
JPS59194436A (en) * 1983-04-20 1984-11-05 Kokusai Electric Co Ltd Dry etching method and device therefor
JPS6016416A (en) * 1983-07-08 1985-01-28 Hitachi Ltd Vapor growth apparatus
JPS6134926A (en) * 1984-07-26 1986-02-19 Res Dev Corp Of Japan Growing device of semiconductor single crystal
US4668337A (en) * 1984-09-21 1987-05-26 Kabushiki Kaisha Toshiba Dry-etching method and apparatus therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130370A (en) * 1974-04-01 1975-10-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130370A (en) * 1974-04-01 1975-10-15

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
JPS5933830A (en) * 1982-08-20 1984-02-23 Toshiba Corp Dry etching
JPS5986222A (en) * 1982-11-10 1984-05-18 Toshiba Corp Dry etching method
JPS59155935A (en) * 1983-02-25 1984-09-05 Agency Of Ind Science & Technol Forming method of pattern by using plasma
JPH0526329B2 (en) * 1983-02-25 1993-04-15 Kogyo Gijutsuin
JPS59194436A (en) * 1983-04-20 1984-11-05 Kokusai Electric Co Ltd Dry etching method and device therefor
JPS6016416A (en) * 1983-07-08 1985-01-28 Hitachi Ltd Vapor growth apparatus
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking
JPS6134926A (en) * 1984-07-26 1986-02-19 Res Dev Corp Of Japan Growing device of semiconductor single crystal
US4668337A (en) * 1984-09-21 1987-05-26 Kabushiki Kaisha Toshiba Dry-etching method and apparatus therefor

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