JPH0527968B2 - - Google Patents
Info
- Publication number
- JPH0527968B2 JPH0527968B2 JP60012014A JP1201485A JPH0527968B2 JP H0527968 B2 JPH0527968 B2 JP H0527968B2 JP 60012014 A JP60012014 A JP 60012014A JP 1201485 A JP1201485 A JP 1201485A JP H0527968 B2 JPH0527968 B2 JP H0527968B2
- Authority
- JP
- Japan
- Prior art keywords
- etched
- etching
- controlling
- temperature
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造に用いるプラズ
マエツチング装置の制御方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of controlling a plasma etching apparatus used for manufacturing semiconductor devices.
従来のプラズマエツチング装置としては、熱伝
導によつて被エツチング材温度を制御する方法を
用いたもの、あるいは異方性プラズマエツチング
を用いたものがあつた。
Conventional plasma etching apparatuses include those that use a method of controlling the temperature of the material to be etched by heat conduction, and those that use anisotropic plasma etching.
第４図は従来の枚葉式プラズマエツチヤーを示
す。図において、１はSi基板、１２は被エツチン
グ材である。また２は下部電極で、これはRFが
印加され、かつヒータにより加熱される構造とな
つている。３は上部電極、４はチヤンバ、５はＯ
リングである。 FIG. 4 shows a conventional single-wafer plasma etcher. In the figure, 1 is a Si substrate and 12 is a material to be etched. Reference numeral 2 denotes a lower electrode, to which RF is applied and heated by a heater. 3 is the upper electrode, 4 is the chamber, 5 is O
It's a ring.
この装置では、Si基板１は下部電極２からの熱
伝導により加熱される。この加熱されたSi基板１
の熱は、基板１裏面からの熱勾配によりSi基板１
表面に伝達される。そして上部電極３、下部電極
２間に電圧を印加すると、両電極間にプラズマが
発生してプラズマエツチングが行なわれる。 In this device, the Si substrate 1 is heated by heat conduction from the lower electrode 2. This heated Si substrate 1
The heat from the Si substrate 1 is due to the thermal gradient from the back side of the substrate 1.
transmitted to the surface. When a voltage is applied between the upper electrode 3 and the lower electrode 2, plasma is generated between the two electrodes and plasma etching is performed.
しかるに上記熱伝導によつて被エツチング材温
度を制御する方法では、被エツチング材の裏面か
ら熱伝導が起こるため、被エツチング材全体の温
度がほぼ一定に保持されることになり、被エツチ
ング材のエツチング速度を増大させようとすれ
ば、被エツチング材上に形成したレジストが硬化
変質してしまうという欠点があつた。
However, in the above method of controlling the temperature of the material to be etched by heat conduction, heat conduction occurs from the back surface of the material to be etched, so the temperature of the entire material to be etched is kept almost constant, and the temperature of the material to be etched is If an attempt was made to increase the etching speed, there was a drawback that the resist formed on the material to be etched would harden and change in quality.
又、異方性プラズマエツチングの場合は、従来
法ではエツチング断面がほぼ垂直であり（第３図
ａ参照）、この垂直なエツチング断面により発生
する段差により後工程でこの上に形成されるアル
ミ配線が断線し、歩留り、信頼性上重大な障害と
なる欠点があつた。 In addition, in the case of anisotropic plasma etching, in the conventional method, the etching cross section is almost vertical (see Figure 3a), and the step created by this vertical etching cross section prevents the aluminum wiring formed on it in the subsequent process. The wires were disconnected, which caused a serious problem in terms of yield and reliability.
この発明は、上記のような従来のプラズマエツ
チング法の欠点を除去でき、歩留り、信頼性を向
上できるプラズマエツチング装置の制御方法を提
供することを目的としている。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for controlling a plasma etching apparatus that can eliminate the drawbacks of the conventional plasma etching method as described above and improve yield and reliability.
この発明に係るプラズマエツチング装置の制御
方法は、被エツチング材表面にレーザ光を照射し
てこれを加熱するレーザ光照射手段、及び上記被
エツチング材を載置するステージを冷却する冷却
手段を用い、上記被エツチング材のエツチングの
進行状況に合わせて上記レーザ光のパルス照射条
件および上記ステージ冷却手段を制御することに
より上記被エツチング材表面の温度を制御するよ
うにしたものである。
A method for controlling a plasma etching apparatus according to the present invention uses a laser beam irradiation means for irradiating a laser beam onto the surface of a material to be etched to heat it, and a cooling means for cooling a stage on which the material to be etched is placed. The temperature of the surface of the material to be etched is controlled by controlling the pulse irradiation conditions of the laser beam and the stage cooling means in accordance with the progress of etching of the material to be etched.
この発明においては、レーザ光の照射によつて
加熱状態にある被エツチング材の表面温度を、上
記レーザ光のパルス照射条件及び上記ステージの
冷却手段の制御によりエツチングの進行状況に応
じて制御するようにしたから、エツチング速度を
エツチングによつて得られる断面形状との関係に
基づいて変化させることが可能となり、エツチン
グ特性が等方性でも異方性でもよいエツチング段
階には積極的に被エツチング材の表面温度を高め
てエツチング処理時間の無用の増大を回避するこ
とができる。これにより所望の断面形状のエツチ
ングパターンをエツチング処理時間の増大を極力
抑えつつしかも歩留りよく形成することができ
る。
In this invention, the surface temperature of the material to be etched which is heated by the laser beam irradiation is controlled according to the progress of etching by controlling the pulse irradiation conditions of the laser beam and the cooling means of the stage. Because of this, it is possible to change the etching rate based on the relationship with the cross-sectional shape obtained by etching, and during the etching stage, where the etching characteristics may be isotropic or anisotropic, the etching rate can be changed actively. Unnecessary increase in etching time can be avoided by increasing the surface temperature of the etching process. As a result, an etching pattern having a desired cross-sectional shape can be formed with a high yield while minimizing the increase in etching processing time.
第１図は本発明の一実施例によるプラズマエツ
チング装置の制御方法を説明するための図であ
る。図において第４図と同一符号は同一部分を示
し、この装置では、Si基板１の表面にレーザ光を
照射するレーザ光照射手段がチヤンバ４の外に設
けられている。このレーザ光６の入射方法は、Si
基板１表面が均一に照射されれば、いかなる方法
でもよい。
FIG. 1 is a diagram for explaining a method of controlling a plasma etching apparatus according to an embodiment of the present invention. In the figure, the same reference numerals as in FIG. 4 indicate the same parts, and in this apparatus, a laser light irradiation means for irradiating the surface of the Si substrate 1 with laser light is provided outside the chamber 4. The method of incidence of this laser beam 6 is as follows:
Any method may be used as long as the surface of the substrate 1 is uniformly irradiated.
本装置では、上記レーザ光照射手段は、通常用
いられているレーザアニール技術で行なわれてい
るように、第２図ａに示すパルス光を照射するも
のであり、パルス幅は、0.1〜1.0μsecが標準的で
ある。この場合の基板表面温度は第２図ｂに示す
ようになり、このときの入射パワーはパルス振幅
で決まり、入射エネルギーはパルス振幅とパルス
幅との積で決まるが、この入射熱エネルギーは、
数μsecで緩和される。従つて、数μsecのオーダー
でパルス間隔（あるいはパルス幅）を制御すれ
ば、即ち、該パルス間隔（あるいはパルス幅）を
時間的に変化させればその熱緩和を制御でき、こ
れにより被エツチング材表面温度を、例えばエツ
チングの進行に伴い高温から低温に移行するよう
に、自由に制御することができる。また本実施例
では、レーザ光の照射によつて加熱状態にある被
エツチング材の熱緩和を行う方法として、さらに
上記被エツチング材を載置するステージを冷却す
る冷却手段を用いており、上記被エツチング材の
エツチングの進行状況に合わせて上記レーザ光の
パルス照射条件および上記ステージ冷却手段を制
御することにより上記被エツチング材表面の温度
制御が行われるようになつている。 In this apparatus, the laser beam irradiation means irradiates the pulsed light shown in FIG. is standard. The substrate surface temperature in this case is as shown in Figure 2b, and the incident power at this time is determined by the pulse amplitude, and the incident energy is determined by the product of the pulse amplitude and pulse width, but this incident thermal energy is
It is relieved in a few microseconds. Therefore, if the pulse interval (or pulse width) is controlled on the order of several microseconds, that is, if the pulse interval (or pulse width) is changed over time, the thermal relaxation can be controlled, and thereby the material to be etched can be The surface temperature can be freely controlled, for example, so that it changes from a high temperature to a low temperature as etching progresses. Furthermore, in this example, as a method for thermally relaxing the material to be etched which is heated by laser beam irradiation, a cooling means is used to cool the stage on which the material to be etched is placed. The temperature of the surface of the material to be etched is controlled by controlling the pulse irradiation conditions of the laser beam and the stage cooling means in accordance with the progress of etching of the etching material.
第３図は、本発明の一実施例によるプラズマエ
ツチング装置を異方性プラズマエツチング
（RIE）法に適用し、所望のエツチング断面形状
を得るようにした場合の該エツチング断面形状を
示す。第３図ａは熱緩和制御を行なわない場合の
エツチング断面形状を、同図ｂは熱緩和制御を行
なつた場合のエツチング断面形状を示し、図中、
１はSi基板、１２は被エツチング材、１３はレジ
ストである。 FIG. 3 shows an etched cross-sectional shape when a plasma etching apparatus according to an embodiment of the present invention is applied to an anisotropic plasma etching (RIE) method to obtain a desired etched cross-sectional shape. Figure 3a shows the etched cross-sectional shape without thermal relaxation control, and Figure 3b shows the etched cross-sectional shape with thermal relaxation control.
1 is a Si substrate, 12 is a material to be etched, and 13 is a resist.
まず第３図ａに示す断面形状を得るには、被エ
ツチング材表面温度を一定温度とすればよく、該
表面温度を低い温度とすれば、図ａのようにレジ
スト１３と同じ幅でエツチングされた垂直なエツ
チング断面形状が得られ、該表面温度を高い温度
とすればレジスト１３より幅が狭くサイドエツチ
された垂直なエツチング断面形状が得られる。 First, in order to obtain the cross-sectional shape shown in FIG. 3a, the surface temperature of the material to be etched may be kept constant. If the surface temperature is set to a low temperature, the etching material will be etched with the same width as the resist 13 as shown in FIG. 3a. A vertical etched cross-sectional shape is obtained, and if the surface temperature is increased, a vertical etched cross-sectional shape narrower than the resist 13 and side-etched can be obtained.
次にエツチング初期に被エツチング材表面温度
を高温とし、高速エツチングを行なえば、同図ｂ
の被エツチング材１２の上部のように、等方性に
近い断面形状が得られ、しかる後に、被エツチン
グ材温度をより低温にコントロールすれば、被エ
ツチング材１２の下部のように、レジストマスク
１３に近い形状のエツチングが進行し、その結果
第３図ｂの熱緩和制御型のエツチング断面形状が
得られる。このような断面形状を得られた場合
は、段差がなめらかで後工程のアルミ配線の断線
の問題はなくなり、デバイスの信頼性、歩留りの
向上に効果があるものである。 Next, if the surface temperature of the material to be etched is set to a high temperature in the early stage of etching and high-speed etching is performed,
As shown in the upper part of the material to be etched 12, a nearly isotropic cross-sectional shape can be obtained, and if the temperature of the material to be etched is controlled to a lower temperature, the resist mask 13 can be obtained as in the lower part of the material to be etched. As a result, the etching cross-sectional shape of the thermal relaxation controlled type shown in FIG. 3b is obtained. When such a cross-sectional shape is obtained, the difference in level is smooth and there is no problem of disconnection of the aluminum wiring in the subsequent process, which is effective in improving the reliability and yield of the device.
また本実施例では、上述のようにレーザ光の照
射による加熱状態にある被エツチング材表面の温
度制御を、エツチングによつて得られるパターン
の断面形状との関係に基づいて行うようにしたの
で、等方性のエツチング特性でも、異方性のエツ
チング特性でもよいエツチング初期段階にはレー
ザ光の加熱により被エツチング材表面を高温状態
とすることによつてエツチング速度の無用の増大
を回避することができる。 Furthermore, in this embodiment, the temperature of the surface of the etched material heated by laser beam irradiation is controlled based on the relationship with the cross-sectional shape of the pattern obtained by etching. In the initial stage of etching, which can be either isotropic or anisotropic, it is possible to avoid an unnecessary increase in the etching rate by heating the surface of the material to be etched using laser light. can.
以上のように本発明に係るプラズマエツチング
装置の制御方法によれば、レーザ光の照射によつ
て加熱状態にある被エツチング材の表面温度を、
上記レーザ光のパルス照射条件及び上記ステージ
の冷却手段の制御によりエツチングの進行状況に
応じて制御するようにしたので、エツチング速度
をエツチングによつて得られる断面形状との関係
に基づいて変化させることが可能となり、エツチ
ング特性が等方性でも異方性ででもよいエツチン
グ段階には積極的に被エツチング材の表面温度を
高めてエツチング処理時間の無用の増大を回避す
ることができ、所望の断面形状のエツチングパタ
ーンの形成をエツチング処理時間の増大を極力抑
えつつしかも歩留りよく行うことができる効果が
ある。
As described above, according to the method for controlling a plasma etching apparatus according to the present invention, the surface temperature of the material to be etched which is heated by laser beam irradiation can be controlled by
Since the etching is controlled according to the progress of etching by controlling the pulse irradiation conditions of the laser beam and the cooling means of the stage, the etching speed can be changed based on the relationship with the cross-sectional shape obtained by etching. This makes it possible to proactively increase the surface temperature of the material to be etched during the etching stage, where the etching characteristics may be isotropic or anisotropic, thereby avoiding unnecessary increases in etching processing time, and achieving the desired cross-section. This has the effect that a shaped etching pattern can be formed with a high yield while minimizing the increase in etching processing time.
第１図は本発明の一実施例によるプラズマエツ
チング装置の制御方法を説明するための断面図、
第２図はレーザ照射とSi基板表面温度との関係を
示す図、第３図は本発明の一実施例によるプラズ
マエツチング装置の制御方法をRIE法へ適用して
エツチング処理を行つた場合のエツチング断面形
状を示す図、第４図は従来の枝葉式プラズマエツ
チヤーを示す断面図である。
１…Si基板、１２…被エツチング材、２…下部
電極、３…上部電極、４…チヤンバ、５…Ｏリン
グ、１３…レジスト。
FIG. 1 is a sectional view for explaining a method of controlling a plasma etching apparatus according to an embodiment of the present invention;
Fig. 2 is a diagram showing the relationship between laser irradiation and Si substrate surface temperature, and Fig. 3 is a diagram showing the etching process when the plasma etching apparatus control method according to an embodiment of the present invention is applied to the RIE method. FIG. 4 is a cross-sectional view showing a conventional branch-and-leaf type plasma etcher. DESCRIPTION OF SYMBOLS 1...Si substrate, 12...Etched material, 2...Lower electrode, 3...Upper electrode, 4...Chamber, 5...O ring, 13...Resist.
Claims (1)
し、該被エツチング材表面にレーザ光を照射して
プラズマエツチングを行うプラズマエツチング装
置の制御方法において、 上記被エツチング材表面にレーザ光をパルス照
射してこれを加熱するパルスレーザ光照射手段を
用いるとともに、 上記被エツチング材を載置するステージを冷却
するステージ冷却手段を用い 上記被エツチング材のエツチングの進行状況に
合わせて上記レーザ光のパルス照射条件及びステ
ージ冷却手段を制御することにより、該被エツチ
ング材表面の温度を制御するようにしたことを特
徴とするプラズマエツチング装置の制御方法。[Scope of Claims] 1. A method for controlling a plasma etching apparatus in which a material to be etched is placed in a plasma atmosphere and the surface of the material to be etched is irradiated with a laser beam to perform plasma etching, comprising: A pulsed laser beam irradiation means is used to heat the material by pulse irradiation, and a stage cooling means is used to cool the stage on which the material to be etched is placed. 1. A method of controlling a plasma etching apparatus, characterized in that the temperature of the surface of the material to be etched is controlled by controlling pulse irradiation conditions and stage cooling means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1201485A JPS61171135A (en) | 1985-01-24 | 1985-01-24 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1201485A JPS61171135A (en) | 1985-01-24 | 1985-01-24 | Plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61171135A JPS61171135A (en) | 1986-08-01 |
| JPH0527968B2 true JPH0527968B2 (en) | 1993-04-22 |
Family
ID=11793736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1201485A Granted JPS61171135A (en) | 1985-01-24 | 1985-01-24 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61171135A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118636A (en) * | 1979-03-08 | 1980-09-11 | Toshiba Corp | Gas etching method and device |
| JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
| JPS5853833A (en) * | 1981-09-26 | 1983-03-30 | Toshiba Corp | Plasma etching device |
| JPS5932122A (en) * | 1982-08-16 | 1984-02-21 | Hitachi Ltd | Surface character modifying apparatus |
-
1985
- 1985-01-24 JP JP1201485A patent/JPS61171135A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118636A (en) * | 1979-03-08 | 1980-09-11 | Toshiba Corp | Gas etching method and device |
| JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
| JPS5853833A (en) * | 1981-09-26 | 1983-03-30 | Toshiba Corp | Plasma etching device |
| JPS5932122A (en) * | 1982-08-16 | 1984-02-21 | Hitachi Ltd | Surface character modifying apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61171135A (en) | 1986-08-01 |
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