KR0117814Y1 - Lamp equipment of thermal process for semiconductor wafer - Google Patents

Lamp equipment of thermal process for semiconductor wafer

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Publication number
KR0117814Y1
KR0117814Y1 KR2019940027189U KR19940027189U KR0117814Y1 KR 0117814 Y1 KR0117814 Y1 KR 0117814Y1 KR 2019940027189 U KR2019940027189 U KR 2019940027189U KR 19940027189 U KR19940027189 U KR 19940027189U KR 0117814 Y1 KR0117814 Y1 KR 0117814Y1
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KR
South Korea
Prior art keywords
lamp
wafer
semiconductor wafer
heat treatment
mesh
Prior art date
Application number
KR2019940027189U
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Korean (ko)
Other versions
KR960015600U (en
Inventor
박윤수
이상선
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR2019940027189U priority Critical patent/KR0117814Y1/en
Publication of KR960015600U publication Critical patent/KR960015600U/en
Application granted granted Critical
Publication of KR0117814Y1 publication Critical patent/KR0117814Y1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

본 고안은 그물망 형태의 선 방식으로 배열된 램프 구조를 매트릭스 형태의 점 방식 배열구조로 바꿔 램프에 전원 공급시 웨이퍼의 특정 부분만을 열 처리할 수 있도록 한 웨이퍼 급열 처리용 램프장치에 관한 것으로, 종래에는 한 개의 램프 또는 14개의 선 램프를 이용하기 때문에 전원 조절시 웨이퍼가 특정부분이 아닌 전 영역(area)에 영향을 받아 정확한 웨이퍼 유니포미티 조절이 어려운 문제점이 있는 바, 본 고안은 종래의 이런 문제점을 해결하기 위해 그물망 형태의 선 방식 램프 배열구조를 매트릭스 형태의 점 방식 램프 구조로 변경하므로써 웨이퍼 유니포미티 향상을 통한 품질 및 신뢰성을 높이는 효과가 있다.The present invention relates to a lamp device for wafer quenching treatment to convert the lamp structure arranged in a mesh form of a linear form into a dot form array structure in a matrix form so that only a specific portion of the wafer can be heat treated when the lamp is powered. Since one lamp or 14 line lamps are used, there is a problem that it is difficult to precisely adjust the wafer uniformity because the wafer is affected by the entire area (area) rather than a specific part during power adjustment. In order to solve the problem, by changing the mesh type linear lamp array structure into a matrix type dot lamp structure, it is possible to improve quality and reliability through improved wafer uniformity.

Description

반도체 웨이퍼 급열 처리용 램프장치Lamp device for semiconductor wafer heat treatment

제 1 도 (a)는 기존의 급열 처리용 램프장치의 구조를 나타내는 측면도,1 (a) is a side view showing the structure of a conventional heat treatment lamp device,

(b)는 기존의 급열 처리용 램프장치의 구조를 나타내는 평면도,(b) is a plan view showing the structure of a conventional heat treatment lamp device,

제 2 도는 본 고안의 급열 처리용 램프장치의 구조를 나타내는 평면도이다.2 is a plan view showing the structure of the rapid thermal treatment lamp device of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 램프2 : 웨이퍼1: lamp 2: wafer

본 고안은 반도체 웨이퍼 급열 처리용 램프장치에서 특히 램프의 배열구조에 관한 것으로 그물망 형태의 선 방식으로 배열된 램프 구조를 매트릭스 형태의 점 방식 배열구조로 바꿔 램프에 전원 공급시 웨이퍼의 특정 부분만을 열 처리할 수 있도록 한 웨이퍼 급열 처리용 램프장치에 관한 것이다.The present invention relates to a lamp arrangement for semiconductor wafer quenching treatment, and in particular, to a lamp array structure. The present invention relates to a wafer quenching treatment lamp apparatus that can be processed.

일반적으로 현재 반도체 프로세스 분야는 점점 웨이퍼의 일괄 생산형태(batch type)에서 단일 웨이퍼 형태(single type)로 발전되고 있다. 따라서 급열 처리기(Rapid thermal processor)의 사용은 계속 늘어나고 있으며, 이에 따른 램프 조절에 의한 웨이퍼내의 도우즈 유니포미티 산화막 형성(Dose uniformity oxide growing)시의 균일성 값조절은 반도체 부분에서 중요한 부분을 차지하고 있다.In general, the semiconductor process field is gradually developing from a batch type of wafer to a single wafer type. Therefore, the use of rapid thermal processor continues to increase, and accordingly, uniformity value control during dose uniformity oxide growing in the wafer by lamp control is an important part of the semiconductor part. have.

먼저, 현재 사용되고 있는 반도체 웨이퍼 급열 처리용 램프장치의 배열구조를 보면 이는 그물망 형태의 선 방식 램프구조로서, 제 1 도와 같이 도시할 수 있는 바, 제 1 도(a)는 측면에서 본 램프구조를 나타내고, 제 1 도(b)는 평면에서 본 램프구조를 나타낸다.First of all, the arrangement structure of a lamp device for semiconductor wafer quenching treatment currently being used is a mesh-type line type lamp structure, which can be shown as the first diagram, and FIG. 1 (a) shows the lamp structure viewed from the side. 1 (b) shows the lamp structure seen from the top.

도면에서 보는 바와 같이 급열 처리기 내부의 상/하부 면에 그물망 형태의 선 방식으로 배열되어 있는 램프(1)는 웨이퍼(2)가 급열 처리기에 삽입되면 전원 공급에 따라 점등되어 웨이퍼에 열을 가하게 되며, 이로써 열 처리가 된다.As shown in the drawing, the lamps 1 arranged in a mesh-like linear manner on the upper and lower surfaces of the heat treatment processor are turned on when the wafer 2 is inserted into the heat treatment processor to be heated according to the power supply to heat the wafer. This results in heat treatment.

그러나 종래에는 한 개의 램프 또는 14개로 이루어진 그물망 형태의 선 램프를 배열시켜 급열 처리기 내부를 구성하므로써 하나의 선 램프에 전원을 공급하면 14개의 램프에 점등이 된다. 따라서 웨이퍼에 있는 어느 특정부위의 집적회로에만 열처리를 하고자 할 경우 특정부위의 램프에만 열을 가하는 것이 불가능하므로써 정확한 웨이퍼 유니포미티(uniformity) 조절이 어려운 문제점이 있었다.However, in the related art, by supplying power to one line lamp, the 14 lamps are turned on by constituting the inside of the heat treatment processor by arranging one lamp or a line-shaped line lamp having 14 meshes. Therefore, if the heat treatment is to be applied only to the integrated circuit of any specific part of the wafer, it is impossible to apply heat only to the lamp of the specific part, thereby making it difficult to accurately adjust the wafer uniformity.

따라서 본 고안은 종래의 상기와 같은 문제점을 해결하기 위해 선 방식의 램프 배열구조를 매트릭스 형태의 점 방식 램프 구조로 바꿔 웨이퍼의 특정부분만을 열 처리할 수 있도록 한 것이다.Therefore, in order to solve the above problems, the present invention is intended to heat-process only a specific portion of the wafer by changing the linear lamp array structure into a matrix type dot lamp structure.

이하 본 고안의 일실시예를 첨부도면을 참조하여 상세히 설명하며, 종래와 같은 구성은 동일부호를 부여하여 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings, and the same configuration as in the prior art will be described with the same reference numerals.

제 2 도는 본 고안에 따른 반도체 웨이퍼 급열 처리용 램프구조를 나타내는 평면도로, 도면에서 보는 바와 같이 램프(1)의 구조가 기존의 그물망 형태의 선 방식에서 매트릭스 형태의 점 방식으로 되어 있으며, 이는 웨이퍼(2)의 특정부분만을 열 처리하고 싶을때 전원 공급을 제어하여 사용자가 원하는 부분만 램프가 점등되도록 한다.FIG. 2 is a plan view showing a lamp structure for semiconductor wafer quenching treatment according to the present invention. As shown in the drawing, the structure of the lamp 1 is a dot pattern in a matrix form from a conventional mesh type line method. When you want to heat the specific part of (2), control the power supply so that the lamp is turned on only the part you want.

물론 램프의 전원을 제어하는 방식은 여러가지가 있으며, 이는 공지의 기술이라 그 설명을 생략한다.Of course, there are many ways to control the power supply of the lamp, which is a well-known technique, and a description thereof will be omitted.

이와 같이 램프(1)의 구조가 매트릭스 형태의 점 방식으로 되어 있으므로 사용자가 원하는 웨이퍼(2)의 특정부분 위/아래에 해당되는 램프(1)에만 전원을 공급하게 되면, 그 이외의 웨이퍼(2)에는 열이 가해지지 않기 때문에 기존의 열 처리 방식에 비해 웨이퍼(2)의 신뢰성을 향상시킬 수 있으며, 열처리를 필요로 하지 않는 부위에는 열이 가해지지 않으므로 웨이퍼(2)의 수율 향상도 꾀할 수 있다.Thus, since the structure of the lamp 1 is a matrix type point method, when the power is supplied only to the lamp 1 corresponding to the specific part of the wafer 2 desired or desired by the user, the other wafers 2 ), It is possible to improve the reliability of the wafer 2 compared to the conventional heat treatment method, and to improve the yield of the wafer 2 since no heat is applied to the portion that does not require heat treatment. have.

이상에서 상세히 설명한 바와 같이 본 고안은 기존의 선 배열 램프구조를 매트릭스 형태의 점 배열 램프구조로 변경하므로써 웨이퍼 유니포미티 향상을 통한 품질 및 신뢰성을 높이는 효과가 있다.As described in detail above, the present invention has an effect of improving quality and reliability by improving the wafer uniformity by changing the existing line array lamp structure into a matrix type point array lamp structure.

Claims (1)

그물망 형태의 선 방식 램프구조로 이루어진 반도체 웨이퍼 급열 처리용 램프장치의 램프배열 구조에 있어서, 상기 램프(1)의 구조를 매트릭스 형태의 점 방식으로 변경하여 열처리를 하고자 하는 웨이퍼(2)의 특정부분만을 열 처리할 수 있도록 함을 특징으로 하는 반도체 웨이퍼 급열 처리용 램프장치.In the lamp array structure of the lamp device for semiconductor wafer quenching treatment, which is made of a mesh type wire type lamp structure, a specific portion of the wafer 2 to be heat-treated by changing the structure of the lamp 1 in a matrix type dot method. A lamp device for semiconductor wafer rapid heat treatment, characterized in that the heat treatment only bay.
KR2019940027189U 1994-10-18 1994-10-18 Lamp equipment of thermal process for semiconductor wafer KR0117814Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940027189U KR0117814Y1 (en) 1994-10-18 1994-10-18 Lamp equipment of thermal process for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940027189U KR0117814Y1 (en) 1994-10-18 1994-10-18 Lamp equipment of thermal process for semiconductor wafer

Publications (2)

Publication Number Publication Date
KR960015600U KR960015600U (en) 1996-05-17
KR0117814Y1 true KR0117814Y1 (en) 1998-06-01

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KR2019940027189U KR0117814Y1 (en) 1994-10-18 1994-10-18 Lamp equipment of thermal process for semiconductor wafer

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KR960015600U (en) 1996-05-17

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