JPS5680138A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5680138A
JPS5680138A JP15678679A JP15678679A JPS5680138A JP S5680138 A JPS5680138 A JP S5680138A JP 15678679 A JP15678679 A JP 15678679A JP 15678679 A JP15678679 A JP 15678679A JP S5680138 A JPS5680138 A JP S5680138A
Authority
JP
Japan
Prior art keywords
beams
linear
wafer surface
light
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15678679A
Other languages
Japanese (ja)
Other versions
JPH0133937B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15678679A priority Critical patent/JPS5680138A/en
Publication of JPS5680138A publication Critical patent/JPS5680138A/en
Publication of JPH0133937B2 publication Critical patent/JPH0133937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To permit the application of uniform annealing treatment to a wafer surface region by making the focal line of energy beams linear wherein the beams are scanned on the wafer surface in belt shape. CONSTITUTION:A linear beam formation section 12 is composed of an optical system 16 consisting of a long-arc Xe lamp 14 radiating heating light as continuous waves and a concave reflector projecting sectional light beams making the linear focal line on the wafer surface by condensing the light from the lamp or the like. The sectional light beams are shuttled in an arrow A direction so that the beams may become wider belt shaped ones than the space between dashed lines (a) and (b). In this way, heat treatment will uniformly be applied to the circuit element formation region of a wafer 10 in belt shape by one scan of the linear beams. And the growth of a crystal defect and variations in the activation degree of an ion implantation layer will be eliminated.
JP15678679A 1979-12-05 1979-12-05 Manufacture of semiconductor device Granted JPS5680138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678679A JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678679A JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5680138A true JPS5680138A (en) 1981-07-01
JPH0133937B2 JPH0133937B2 (en) 1989-07-17

Family

ID=15635271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678679A Granted JPS5680138A (en) 1979-12-05 1979-12-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680138A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
EP0091806A2 (en) * 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
JP2004512669A (en) * 2000-03-27 2004-04-22 ウルトラテク，　ステッパー，　インコーポレイテッド Apparatus having a line source of radiant energy for exposing a substrate
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2013232639A (en) * 2012-04-27 2013-11-14 Ultratech Inc Laser annealing scanning methods with reduced annealing non-uniformity

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer
EP0091806A2 (en) * 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2004512669A (en) * 2000-03-27 2004-04-22 ウルトラテク，　ステッパー，　インコーポレイテッド Apparatus having a line source of radiant energy for exposing a substrate
JP2010123994A (en) * 2000-03-27 2010-06-03 Ultratech Stepper Inc Apparatus having line light source of radiant energy for exposing substrate
JP2013232639A (en) * 2012-04-27 2013-11-14 Ultratech Inc Laser annealing scanning methods with reduced annealing non-uniformity

Also Published As

Publication number Publication date
JPH0133937B2 (en) 1989-07-17

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