JP2515883B2 - Lamp annealing equipment for semiconductor device manufacturing - Google Patents
Lamp annealing equipment for semiconductor device manufacturingInfo
- Publication number
- JP2515883B2 JP2515883B2 JP1140605A JP14060589A JP2515883B2 JP 2515883 B2 JP2515883 B2 JP 2515883B2 JP 1140605 A JP1140605 A JP 1140605A JP 14060589 A JP14060589 A JP 14060589A JP 2515883 B2 JP2515883 B2 JP 2515883B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor device
- quartz
- lamp
- lamp annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造に使用される高温短時間
熱処理装置の一種であるランプアニール装置に関する。Description: TECHNICAL FIELD The present invention relates to a lamp annealing apparatus which is a kind of high temperature short time heat treatment apparatus used for manufacturing a semiconductor device.
第３図は従来の半導体装置製造用ランプアニール装置
の一例の側面断面図である。FIG. 3 is a side sectional view of an example of a conventional lamp annealing apparatus for manufacturing a semiconductor device.
石英チャンバー４と、その上下に設けられた加熱用の
タングステンハロゲンランプ１と、リフレクタ６と、石
英チャンバー内部に設けられウェーハを保持するための
石英サセプタ５から構成されていた。It was composed of a quartz chamber 4, a tungsten halogen lamp 1 for heating provided above and below it, a reflector 6, and a quartz susceptor 5 provided inside the quartz chamber for holding a wafer.
上述した従来のランプアニール装置は、タングステン
ハロゲンランプ１によりウェーハ２を急激に加熱するた
め、ウェーハ面内の温度分布が均一でないとアニール後
のウェーハ面内での電気特性がばらついたり、ウェーハ
が反ったり、さらにはスリップラインが発生するという
欠点がある。In the above-described conventional lamp annealing apparatus, since the wafer 2 is rapidly heated by the tungsten halogen lamp 1, if the temperature distribution in the wafer surface is not uniform, the electrical characteristics in the wafer surface after annealing may vary or the wafer may warp. Moreover, there is a drawback that a slip line is generated.
本発明は、石英チャンバーと、前記石英チャンバーの
内部に設置されたウェーハ載置用石英サセプタと、前記
石英チャンバーの上下に設けられ前記ウェーハを加熱す
るタングステンハロゲンランプとを有する半導体装置製
造用ランプアニール装置において、前記石英チャンバー
とタングステンハロゲンランプとの間に角度可変の複数
の不透明石英板を配置したことを特徴とする。The present invention relates to a lamp annealing for semiconductor device manufacturing, which has a quartz chamber, a quartz susceptor for mounting a wafer installed inside the quartz chamber, and tungsten halogen lamps provided above and below the quartz chamber for heating the wafer. The apparatus is characterized in that a plurality of opaque quartz plates with variable angles are arranged between the quartz chamber and the tungsten halogen lamp.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ），（ｂ）は本発明の一実施例の側面断面
図及び正面断面図である。1 (a) and 1 (b) are a side sectional view and a front sectional view of an embodiment of the present invention.
石英チャンバー４内に石英サセプタ５を設置する。こ
の上にウェーハ２を載置するウェーハ２をタングステン
ハロゲンランプ１及びリフレクタ６により反射光により
加熱する。A quartz susceptor 5 is installed in the quartz chamber 4. The wafer 2 on which the wafer 2 is mounted is heated by the tungsten halogen lamp 1 and the reflector 6 by the reflected light.
しかし、ウェーハ２の中央部と周辺部では放熱条件が
違うためウェーハの周辺部では温度が低くなる。そこ
で、ウェーハ面内の温度分布均一性を向上させるため、
第１図（ａ）に示す側面方向ではタングステンハロゲン
ランプ１のパワーを調整し、第１図（ｂ）に示す正面方
向（ランプの長手方向）では、不透明石英板３の角度を
変化させている。すなわち、側面方向では、周辺部のタ
ングステンハロゲンランプ１のパワーを中央部より上げ
てウェーハ２の周辺部の温度を高くしている。また、正
面方向（ランプの長手方向）では、第２図に示すよう
に、周辺部の不透明石英板３を立ててウェーハ周辺部に
照射される光を中央部よりも多くし、周辺部の温度を高
くしてウェーハ面内の温度分布均一性を向上させてい
る。However, since the heat dissipation conditions are different between the central part and the peripheral part of the wafer 2, the temperature becomes lower in the peripheral part of the wafer. Therefore, in order to improve the temperature distribution uniformity within the wafer surface,
The power of the tungsten halogen lamp 1 is adjusted in the side direction shown in FIG. 1 (a), and the angle of the opaque quartz plate 3 is changed in the front direction (longitudinal direction of the lamp) shown in FIG. 1 (b). . That is, in the lateral direction, the power of the tungsten halogen lamp 1 in the peripheral portion is increased from that in the central portion to raise the temperature in the peripheral portion of the wafer 2. Further, in the front direction (longitudinal direction of the lamp), as shown in FIG. 2, the opaque quartz plate 3 in the peripheral portion is erected so that the peripheral portion of the wafer is irradiated with more light than that in the central portion. Is increased to improve the uniformity of temperature distribution in the wafer surface.
以上説明したように本発明は、タングステンハロゲン
ランプと石英チャンバーの間に角度を任意に変えられる
不透明石英板を設置してランプ長手方向の照射される光
量を各々の不透明石英板の設定角度により変えることが
できるようにしたので、ウェーハ面内の温度分布均一性
を向上させ、その結果ウェーハ面内での電気特性のばら
つきを小さくし、さらにはウェーハの反りやスリップラ
インの発生を防止しているという効果がある。As described above, according to the present invention, an opaque quartz plate whose angle can be arbitrarily changed is installed between the tungsten halogen lamp and the quartz chamber, and the amount of light emitted in the lamp longitudinal direction is changed according to the set angle of each opaque quartz plate. As a result, it is possible to improve the uniformity of temperature distribution in the wafer surface and, as a result, reduce variations in electrical characteristics within the wafer surface, and further to prevent wafer warpage and slip lines from occurring. There is an effect.
第１図（ａ），（ｂ）は本発明の一実施例の側面断面図
及び正面断面図、第２図は第１図（ｂ）に示す実施例の
不透明石英板の角度を変えた時に正面断面図、第３図は
従来の半導体装置製造用ランプアニール装置の一例の側
面断面図である。 １……タングステンハロゲンランプ、２……ウェーハ、
３……不透明石英板、４……石英チャンバー、５……石
英サセプタ、６……リフレクタ。FIGS. 1 (a) and 1 (b) are side and front cross-sectional views of an embodiment of the present invention, and FIG. 2 is a view when the angle of the opaque quartz plate of the embodiment shown in FIG. 1 (b) is changed. A front sectional view and FIG. 3 are side sectional views of an example of a conventional lamp annealing apparatus for manufacturing a semiconductor device. 1 ... Tungsten halogen lamp, 2 ... Wafer,
3 ... Opaque quartz plate, 4 ... Quartz chamber, 5 ... Quartz susceptor, 6 ... Reflector.
Claims (1)
内部に設置されたウェーハ載置用石英サセプタと、前記
石英チャンバーの上下に設けられ前記ウェーハを加熱す
るタングステンハロゲンランプとを有する半導体装置製
造用ランプアニール装置において、前記石英チャンバー
とタングステンハロゲンランプとの間に角度可変の複数
の不透明石英板を配置したことを特徴とする半導体装置
製造用ランプアニール装置。1. A lamp for manufacturing a semiconductor device, comprising a quartz chamber, a wafer-mounting quartz susceptor installed inside the quartz chamber, and tungsten halogen lamps provided above and below the quartz chamber for heating the wafer. In the annealing apparatus, a plurality of opaque quartz plates having variable angles are arranged between the quartz chamber and the tungsten halogen lamp, and a lamp annealing apparatus for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140605A JP2515883B2 (en) | 1989-06-02 | 1989-06-02 | Lamp annealing equipment for semiconductor device manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140605A JP2515883B2 (en) | 1989-06-02 | 1989-06-02 | Lamp annealing equipment for semiconductor device manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH036018A JPH036018A (en) | 1991-01-11 |
| JP2515883B2 true JP2515883B2 (en) | 1996-07-10 |
Family
ID=15272597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140605A Expired - Fee Related JP2515883B2 (en) | 1989-06-02 | 1989-06-02 | Lamp annealing equipment for semiconductor device manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2515883B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905983B2 (en) | 2002-12-04 | 2005-06-14 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing semiconductor devices, and semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619885A (en) * | 1992-05-15 | 1997-04-15 | Amada Metrecs Company, Limited | Upper tool holder apparatus for press brake and method of holding the upper tool |
| US5685191A (en) * | 1994-05-06 | 1997-11-11 | Amada Metrecs Company, Limited | Upper tool for press brake |
| US6449428B2 (en) | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| JP2001007039A (en) | 1999-06-18 | 2001-01-12 | Hitachi Ltd | Method for manufacturing semiconductor integrated circuit device |
-
1989
- 1989-06-02 JP JP1140605A patent/JP2515883B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905983B2 (en) | 2002-12-04 | 2005-06-14 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing semiconductor devices, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH036018A (en) | 1991-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |