JPS55118636A - Gas etching method and device - Google Patents

Gas etching method and device

Info

Publication number
JPS55118636A
JPS55118636A JP2611179A JP2611179A JPS55118636A JP S55118636 A JPS55118636 A JP S55118636A JP 2611179 A JP2611179 A JP 2611179A JP 2611179 A JP2611179 A JP 2611179A JP S55118636 A JPS55118636 A JP S55118636A
Authority
JP
Japan
Prior art keywords
etching
etched
gas
quartz
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2611179A
Other languages
Japanese (ja)
Inventor
Haruo Yamagishi
Mitsugi Higashiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2611179A priority Critical patent/JPS55118636A/en
Publication of JPS55118636A publication Critical patent/JPS55118636A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten the etching time of a high melting point metal or the like and reduce the irregularity of etching time by raising the temperature of the metal to be etched upon irradiation of light thereto when chemically dry etching the metal. CONSTITUTION:CF4+O2 gas is introduced from a gas inlet 11 into a quartz tube 12 to generate a gas plasma A at the passage of a microwave waveguide tube 13. A Teflon branch 14 is provided at the position by approx. 50cm from the tube 13, connected through a quartz tube 15 to a quartz specimen chamber 16, and etching gas is introduced thereto. A material 18 to be etched is placed on a quartz board 17 in the chamber 16, light is irradiated from a light source 21 to a material 18 to be etched, and the material 18 is raised at its temperature thereby. When the material 18 is thus raised at its temperature, the etching speed is accelerated to complete the etching process for short time. Accordingly, no change occurs on the surface of the material to be etched.
JP2611179A 1979-03-08 1979-03-08 Gas etching method and device Pending JPS55118636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2611179A JPS55118636A (en) 1979-03-08 1979-03-08 Gas etching method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2611179A JPS55118636A (en) 1979-03-08 1979-03-08 Gas etching method and device

Publications (1)

Publication Number Publication Date
JPS55118636A true JPS55118636A (en) 1980-09-11

Family

ID=12184467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2611179A Pending JPS55118636A (en) 1979-03-08 1979-03-08 Gas etching method and device

Country Status (1)

Country Link
JP (1) JPS55118636A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPS5986222A (en) * 1982-11-10 1984-05-18 Toshiba Corp Dry etching method
JPS61171135A (en) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp Plasma etching device
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPS62109448U (en) * 1985-12-27 1987-07-13

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPS5986222A (en) * 1982-11-10 1984-05-18 Toshiba Corp Dry etching method
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPS61171135A (en) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp Plasma etching device
JPH0527968B2 (en) * 1985-01-24 1993-04-22 Mitsubishi Electric Corp
JPS62109448U (en) * 1985-12-27 1987-07-13
JPH056654Y2 (en) * 1985-12-27 1993-02-19

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