JPS5483376A - Plasma treatment equipment - Google Patents

Plasma treatment equipment

Info

Publication number
JPS5483376A
JPS5483376A JP15057577A JP15057577A JPS5483376A JP S5483376 A JPS5483376 A JP S5483376A JP 15057577 A JP15057577 A JP 15057577A JP 15057577 A JP15057577 A JP 15057577A JP S5483376 A JPS5483376 A JP S5483376A
Authority
JP
Japan
Prior art keywords
sample
magnetic field
plasma
plasma treatment
treatment equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15057577A
Other languages
Japanese (ja)
Inventor
Naoki Yokoyama
Koichiro Kotani
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15057577A priority Critical patent/JPS5483376A/en
Publication of JPS5483376A publication Critical patent/JPS5483376A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To perform plasma treatment by preventing the temperature rise of the sample and controlling the treating speed. CONSTITUTION:In the region of sample 8, quartz tube 2 is surrounded by solenoid coil 11, thereby generating a magnetic field in the vertical direction inside the tube. In this magnetic field, the plasma flow receives narrowing force and converges on substrate 8. Consequently, changing the strength of the magnetic field will make it possible to adjust plasma density with respect to the sample surface. Although high- frequency electrode 6 is about 150 mm away from sample 8, plasma is transported to the sample by the action of coil 11. Thus the sample is kept at a temperature below 100 deg.C and oxidized.
JP15057577A 1977-12-16 1977-12-16 Plasma treatment equipment Pending JPS5483376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15057577A JPS5483376A (en) 1977-12-16 1977-12-16 Plasma treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15057577A JPS5483376A (en) 1977-12-16 1977-12-16 Plasma treatment equipment

Publications (1)

Publication Number Publication Date
JPS5483376A true JPS5483376A (en) 1979-07-03

Family

ID=15499877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15057577A Pending JPS5483376A (en) 1977-12-16 1977-12-16 Plasma treatment equipment

Country Status (1)

Country Link
JP (1) JPS5483376A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553422A (en) * 1978-10-16 1980-04-18 Mitsubishi Electric Corp Plasma reactor
JPS5664441A (en) * 1979-10-30 1981-06-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS59155135A (en) * 1983-02-23 1984-09-04 Mitsubishi Electric Corp Formation of film and device thereof
JPS61130487A (en) * 1984-11-29 1986-06-18 Matsushita Electric Ind Co Ltd Plasma injection cvd device
JPS63166971A (en) * 1986-12-27 1988-07-11 Anelva Corp Method and apparatus for surface treatment
JP2008052911A (en) * 2006-08-22 2008-03-06 Shinku Device:Kk Plasma irradiation device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553422A (en) * 1978-10-16 1980-04-18 Mitsubishi Electric Corp Plasma reactor
JPS6214937B2 (en) * 1978-10-16 1987-04-04 Mitsubishi Electric Corp
JPS5664441A (en) * 1979-10-30 1981-06-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS6148773B2 (en) * 1979-10-30 1986-10-25 Cho Eru Esu Ai Gijutsu Kenkyu Kumiai
JPS59155135A (en) * 1983-02-23 1984-09-04 Mitsubishi Electric Corp Formation of film and device thereof
JPS61130487A (en) * 1984-11-29 1986-06-18 Matsushita Electric Ind Co Ltd Plasma injection cvd device
JPS6326195B2 (en) * 1984-11-29 1988-05-28 Matsushita Electric Ind Co Ltd
JPS63166971A (en) * 1986-12-27 1988-07-11 Anelva Corp Method and apparatus for surface treatment
JP2008052911A (en) * 2006-08-22 2008-03-06 Shinku Device:Kk Plasma irradiation device

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