JPS5727033A - Thin film treating device - Google Patents

Thin film treating device

Info

Publication number
JPS5727033A
JPS5727033A JP10113180A JP10113180A JPS5727033A JP S5727033 A JPS5727033 A JP S5727033A JP 10113180 A JP10113180 A JP 10113180A JP 10113180 A JP10113180 A JP 10113180A JP S5727033 A JPS5727033 A JP S5727033A
Authority
JP
Japan
Prior art keywords
reaction gas
shower
thin film
shield
bell jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10113180A
Other languages
Japanese (ja)
Inventor
Akira Takamatsu
Hideo Sakai
Takeo Yoshimi
Miyoko Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10113180A priority Critical patent/JPS5727033A/en
Publication of JPS5727033A publication Critical patent/JPS5727033A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To excite uniformly reaction gas in a thin film treating device and to enable to form a thin film having favorable quality by a method wherein the circumference of a shower at the reaction gas blasting part and a susceptor to put a sample thereon in a bell jar is surrounded with a conductive shield, and the gas blasting part of a reaction gas introducing tube is made also to have shower structure. CONSTITUTION:The outer circumference of the reaction gas blasting part of the shower 2 and the susceptor 8 to put the sample thereon at the center of the bell jar 6 is surrounded with the shield 13 consisted of a conductive material of Al, etc. The upper part shower 11 is provided at the gas blasting part of the upper part reaction gas introducing tube 1 of the bell jar 6. Therefore reaction gas being poured uniformly from the upper part shower of the reaction gas introducing tube 1 is excited uniformly by application of a high-frequency voltage between the shield 13 and application of a high-frequency voltage of an induction coil 3, and is excited again by passing through shower conducting holes 5 at the lower part. Accordingly insufficient excitation of reaction gas is prevented, and the thin film having uniform thickness and uniform quality and having favorable quality can be formed.
JP10113180A 1980-07-25 1980-07-25 Thin film treating device Pending JPS5727033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10113180A JPS5727033A (en) 1980-07-25 1980-07-25 Thin film treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10113180A JPS5727033A (en) 1980-07-25 1980-07-25 Thin film treating device

Publications (1)

Publication Number Publication Date
JPS5727033A true JPS5727033A (en) 1982-02-13

Family

ID=14292516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10113180A Pending JPS5727033A (en) 1980-07-25 1980-07-25 Thin film treating device

Country Status (1)

Country Link
JP (1) JPS5727033A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928093U (en) * 1982-08-13 1984-02-21 川崎重工業株式会社 banca
JPS60228284A (en) * 1984-04-20 1985-11-13 株式会社荏原製作所 Bridge removing device for rotary type silo dispensing facility
JPS60195794U (en) * 1984-06-05 1985-12-27 株式会社　石井製作所 grain container
JPS61144096U (en) * 1985-02-28 1986-09-05
JPH08264296A (en) * 1994-11-01 1996-10-11 Applied Materials Inc Reactive ion etching inductively reinforced

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928093U (en) * 1982-08-13 1984-02-21 川崎重工業株式会社 banca
JPS6240943Y2 (en) * 1982-08-13 1987-10-20
JPS60228284A (en) * 1984-04-20 1985-11-13 株式会社荏原製作所 Bridge removing device for rotary type silo dispensing facility
JPS60195794U (en) * 1984-06-05 1985-12-27 株式会社　石井製作所 grain container
JPS61144096U (en) * 1985-02-28 1986-09-05
JPH08264296A (en) * 1994-11-01 1996-10-11 Applied Materials Inc Reactive ion etching inductively reinforced
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching

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