JPS6326195B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plasma injection CVD apparatus that forms a very hard carbon film with high efficiency.

BACKGROUND ART A conventional electrodeless inductively coupled plasma CVD apparatus has a configuration as shown in FIG. 8, as disclosed in, for example, Japanese Unexamined Patent Publication No. 132310/1983.

That is, the reaction chamber 3 is suctioned by a vacuum pump through the needle valve 4, and the membrane-forming substrate 1 (hereinafter abbreviated as the substrate) is placed in the reaction chamber 3. Monomer gas and carrier gas (for example, N ₂ ) are introduced into the reaction chamber 3 with flow rates adjusted using a needle valve. A high frequency coil 2 is wound around the reaction chamber 3 and connected to a high frequency power source 6 via a matching box 5. To outline the operation, first, the residual air in the reaction chamber 3 is sufficiently removed, and then, while monomer gas is gradually introduced into the reaction chamber 3, the high frequency power source 6 is activated, and RF power is applied to the high frequency coil 2. A film is formed on the substrate 1 by causing discharge.

Figure 9 shows an outline of an internally opposed electrode type plasma/CVD device that is often used to accelerate ions generated in plasma to form a film (Plasma Chemistry, p. 42, written by Kaoru Yoshimoto). Monomer gas and carrier gas are introduced at appropriate flow rates into the vacuum chamber 11 from which residual gas has been removed. RF power is applied between the base electrode 8 and the electrode 9 by a high frequency power source 10 to generate a discharge, and a film forming base 7 (hereinafter abbreviated as the base) is formed.
Form a film on top. When accelerating ions in plasma to form a film, a potential difference may be provided between the electrode 9 and the base electrode 8 such that the base electrode 8 has a lower potential.

Problems to be Solved by the Invention However, conventional plasmas with such a configuration
CVD equipment has the following problems.

In the case of an internally opposed electrode type plasma CVD apparatus, a film is also formed on the electrode 9 and the base electrode 8 over time, and the base electrode 8 and the electrode 9 are contaminated. Correspondingly, changes occur in the potential state, and not only does the formed film become non-uniform, but also the discharge becomes unstable. Furthermore, since the discharge spreads within the vacuum chamber 11, deposits are formed on the inner wall of the vacuum chamber 11, causing contamination, and the temperature of the substrate 7 rises because the substrate 7 is constantly exposed to plasma. The rise in temperature of the substrate 7 becomes more significant when ions in plasma are accelerated to form a film. As described above, internally facing electrode type plasma CVD
In the case of the device, there is a problem in that it is difficult to control the film quality uniformly because the potential state and substrate temperature change over time.

In the case of electrodeless/inductively coupled plasma CVD equipment,
The state of plasma generated within the reaction chamber 3 varies significantly depending on the location, and it is extremely difficult to uniformly control this state. Therefore, it is difficult to uniformly control the quality of the film formed on the substrate 1 placed in the reaction chamber 3. In addition, as in the case of an internally facing plasma CVD apparatus, the discharge spreads within the reaction chamber 3, causing deposits to form on the inner wall of the reaction chamber 3 and contaminating it, and since the substrate 1 is constantly exposed to plasma, the temperature rises. arise. In other words, in the case of an electrodeless/inductively coupled plasma CVD device, it is difficult to control the unevenness of the plasma state generated in the reaction chamber 3 using external parameters such as the gas pressure in the reaction chamber and RF power, and the substrate temperature There was a problem in that it was difficult to make the quality of the film formed on the substrate 1 uniform because of the large change over time.

In addition, whether it is an internally facing plasma CVD device or an electrodeless inductively coupled plasma CVD device,
Since the entire substrates 1 and 7 are exposed to plasma, it is not suitable for forming a film locally. Furthermore, since the discharge spreads throughout the reaction chamber 3 and the vacuum chamber 11, it is impossible to apply the method to existing vacuum devices (e.g., evaporation devices, sputtering devices, etc.) while maintaining its functionality. Therefore, when adding a plasma CVD processing section to an existing production line, completely new equipment is required, which requires a huge amount of cost.

Therefore, the present invention makes it possible to form a homogeneous film in any shape by suppressing changes in the plasma state over time and unevenness in location, and also allows installation in existing vacuum equipment without impairing its functionality with minimal rise in substrate temperature. The purpose of this project is to provide a plasma injection CVD device that can perform

Means for Solving the Problems The technical means of the present invention for solving the above problems are as follows:
The vacuum device is an electrodeless inductively coupled type vacuum device consisting of two vacuum chambers, and includes a plasma generating section that converts gas introduced into the first vacuum chamber made of non-magnetic material into plasma, and a film forming substrate installed in the second vacuum chamber that generates plasma. It is equipped with a plasma blowing part facing the film forming substrate and a plasma acceleration means for spraying, and the stable plasma generated in the plasma generation part in the first vacuum chamber is accelerated by the plasma acceleration means to accelerate the ions in the plasma. By spraying the film onto a film-forming substrate placed in the second vacuum chamber, a highly efficient and homogeneous high-hardness carbon film or the like can be formed with high efficiency and little change in substrate temperature.

Effects The present invention has the above-described configuration, which not only makes it possible to spray stable plasma onto the substrate and obtain a highly efficient and homogeneous high-hardness carbon film, but also allows the substrate to be exposed to plasma because the entire substrate is not exposed to the plasma. There is little temperature rise, and by changing the shape of the plasma blowing part, a film can be formed in any desired range. In addition, the first vacuum chamber can be equipped with a plasma generation section, a plasma blowout section, and a plasma acceleration means, and if the two vacuum chambers can be separated, they can be handled as a unit, making it possible to use them in existing vacuum equipment. It can also be easily applied and installed without compromising its functionality.

Embodiment FIG. 1 is a schematic diagram showing an embodiment of the plasma injection CVD apparatus of the present invention.
In FIG. 1, 12 is a vacuum chamber, and 13 is a plasma tube, which has a plasma blowing part 23 at its tip. 1
4 is a high frequency coil connected to a high frequency power source 16 via a matching box 15. Reference numeral 17 denotes a film forming substrate (hereinafter abbreviated as the substrate), which is installed so as to face the plasma blowing section. Reference numeral 18 denotes a mesh-shaped accelerating electrode, one end of which is installed inside the plasma tube 13 from the plasma blowing section 23 (hereinafter referred to as a plasma generating section). Reference numeral 19 is a DC power source that provides a potential difference between the mesh-like accelerating electrode 18 and the base 17 or the base mounting table 24. 20,2
1 is a needle valve, and 23 is a Pirani vacuum gauge.

The operation of the plasma injection CVD apparatus of this embodiment constructed as described above will be explained below. One end of the plasma tube 13 is installed in the vacuum chamber 12, and a plasma blowing section 23 is set at the tip thereof. A mesh-shaped accelerating electrode 18 is installed in the plasma blowing section 23 so that at least one end thereof is inside the plasma generating section, and a potential difference is applied between the mesh-shaped accelerating electrode 18 and the base 17 or the base mounting table 24 by a DC power supply 19. It will be done.

A carrier gas and a monomer gas are introduced through needle valves 20 and 21 into the plasma tube 13, which is maintained at a high vacuum of 1.0×10 ^-4 Ton or more by a vacuum pump. RF power is applied from a high frequency power source 16 via a matching box 15 to a high frequency coil 14 wound around a portion of the plasma tube 13 outside the vacuum chamber 12,
Plasma is generated within the plasma tube 13. The generated plasma is accelerated by the acceleration means that accelerates the ions in the plasma due to the pressure difference between the vacuum chamber 12 and the plasma tube 13 and the potential difference between the mesh-like accelerating electrode and the base 17 or the base mounting table 24, and then reaches the plasma blowing section. 23 and is blown onto the substrate 17 to form a film on the substrate 17.

Using this example, Ar as the carrier gas,
Various experiments were conducted using CH ₄ as the monomer gas, and the results described below were obtained.

RF power...0.1 to 2.0KW, plasma tube pressure...0.01 to 10Ton, potential difference V _P ...by changing the parameters in the range of 0 to 1.5KV, films with different properties (e.g. refractive index, hardness, etc.) were created. was able to form.

For example, FIG. 2 shows the relationship between the potential difference V _P between the mesh-like accelerating electrode 18 and the base 17 and the hardness of the formed film. When the potential difference V _P exceeds 0.3KV, the hardness of the film increases rapidly, and at 0.5KV, the hardness of the film is approximately
A film of 3000 (Kg/mm ² ) is formed. Also, the potential difference V _P
The film formed when is 0 has a Bitkers hardness of 50
(Kg/mm ² ) or less, it is a very soft membrane. Analyzing the refractive index and components of these films reveals that the potential difference
A soft film formed with V _P of 0 has a refractive index n of approximately 1.6.
However, as the potential difference V _P gradually increases, the refractive index also increases, and a hard film formed at a potential difference V _P of 0.5 KV has a refractive index n of approximately 2.4. It is a film mainly made of carbon.
Judging from this, when the potential difference V _P is less than 0.3 KV, the formed film is an organic film made of carbon and hydrogen, whereas when the potential difference is more than 0.3 KV, the film formed as the ions in the plasma are sufficiently accelerated. is considered to be a high-hardness carbon film (so-called diamond-like thin film: DLC film) consisting mainly of carbon. For DLC films, please contact the Inorganic Materials Research Institute,
Various methods have been studied and published at Tokyo University of Agriculture and Technology (for example, Japan Society of Applied Physics, Spring 1972 28a-C-
5, Spring 1982 1a-E-5, etc.), but in any case, the substrate temperature during film formation must be set at 200°C or higher from the beginning, or even if it is set at room temperature, the The substrate temperature was 200°C or higher. The fastest film formation rate is 300
Å/min, usually 50 to 60 Å/min, which is quite slow.
Further, in the case of a method of forming a film using ions in plasma, when the substrate is an insulator, static electricity is generated and the film quality changes, so it is necessary to provide a new means such as electron irradiation with an electron gun. As mentioned above, when a DLC film is formed using the plasma injection CVD apparatus of this embodiment under the condition that the potential difference between the mesh-like accelerating electrode 18 and the substrate 17 is 0.5 KV, the temperature of the substrate 17 increases after 10 minutes of film formation. The temperature is about 5℃, and the film formation rate is 2000Å/min, which is 11% faster than conventional methods.
An order of magnitude larger.

In addition, in the case of the plasma injection CVD apparatus of this embodiment, in addition to the pressure difference between the plasma tube 13 and the second vacuum chamber 12, the mesh-shaped accelerating electrode 1
8 and the base 17 or the base mounting table 24, the plasma generated in the plasma generating section is blown out from the plasma blowing section 23 towards the base 17, so electrons are always present near the base 17. are doing. Therefore, even if the base body 17 is charged to a positive potential, it is immediately neutralized by electrons, so a mechanism such as an electron gun becomes unnecessary.

As described above, using the plasma injection CVD device of this example, the carrier gas is
When forming a high-hardness carbon film using Ar and CmHn as the monomer gas, the film formation rate is an order of magnitude faster than conventional methods, the film can be formed at room temperature, and the temperature of the base does not rise significantly even after film formation. In addition, there is an advantage that there is no need to newly set up a special mechanism to prevent charging of the base body 17, and its practical effects are great.

In addition, through the experiment, there was no contamination of the inner wall of the second vacuum chamber 12, and only the inner wall of the plasma tube 13 was contaminated, but the plasma tube 13 was placed horizontally, and the plasma blowing part 2
There is no problem as long as you prevent dirt from blowing out from 3.
Since the plasma tube 13 is installed in the vacuum chamber with an O-ring installation tool, it can be easily attached and detached, and as long as there is a place to install the plasma tube 13, it can be easily installed in an existing vacuum device, and the effect is great.

FIG. 3 shows a partially enlarged view of the vicinity of the plasma blowing part in a second embodiment of the plasma injection CVD apparatus of the present invention. In FIG. 3, 26 _{(1) to 26(o)} are mesh-shaped accelerating electrodes installed almost perpendicular to the plasma flow. 27 _(1)～(o-1)
28 is a DC power supply, and 28 is a base body, which is installed facing the plasma blowing part 31.

The operation of the plasma injection CVD apparatus of the second embodiment configured as described above will be explained below. Plasma is generated in the plasma tube 30 and the plasma blowing section 31 is activated by the pressure difference between the plasma tube 30 and the second vacuum chamber 32 and the acceleration means
The operation and principle of blowing out air and forming a film on the substrate 28 is exactly the same as in the first embodiment. However, when forming a film by further accelerating ions in the plasma, in the first embodiment, the substrate 1
7 or the base mounting base 24, in this embodiment, the potential is set on the base 28 and the base mounting base 24.
9 is characterized in that a film having the same quality as that of the first embodiment can be obtained even at ground potential. That is, two or more mesh-shaped accelerating electrodes 26 _{(1) to (o)} are installed in the plasma generating section 32 and the plasma blowing section 31 so as to be substantially perpendicular to the flow of plasma, and between each opposing mesh-shaped accelerating electrode Ions in the plasma generated in the plasma generation section ₃₂ are The ions are sequentially accelerated between the opposing mesh-shaped accelerating electrodes, and by setting the potential of the mesh-shaped accelerating electrode 26 _(o) in the final stage closest to the plasma blowing section 31 to the ground potential, the accelerated ions release their energy. It is blown out without any loss. For this reason, the base body 28,
Even if the potential of the substrate mounting table 29 is at ground potential, the ions collide with the substrate in an accelerated state. if,
If the final mesh-like accelerating electrode 26 _(o) is at negative potential and the base 28 and base mounting base 29 are at ground potential,
The accelerated ions pass through the final mesh-like accelerating electrode 2.
Immediately after passing through 6 _(o) , it is reversely accelerated, and when it reaches the base 28, a considerable amount of energy (determined by the negative potential value of the final mesh-like accelerating electrode 26 _(o) ) is lost.

When ions in the plasma are sequentially accelerated by the mesh-shaped accelerating electrodes 26 _{(1) to (o)} installed in the plasma generation section 32 and the plasma blowing section 31, some of the electrons in the plasma follow the ions. The plasma flows out in the direction of the plasma blowing section 31. By making the distance between the meshes of the meshes used in the mesh-like acceleration electrodes 26 _{(1) to (o)} larger than the Debye length of the plasma, ions in the very vicinity of the mesh-like acceleration electrodes 26 _{(1) to (o)} can be ,
The electrons are separated and the ions are accelerated in the direction of the plasma blowing section 31, and the electrons are accelerated in the opposite direction to the ions, but most of the other ions and electrons are influenced by the mesh-like accelerating electrodes _{26 (1) to (o).} It flows out as a plasma stream in a neutralized state. Therefore, the plasma blown out from the plasma blowing section 23 is composed of accelerated ions, unaccelerated ions, electrons, and neutral species.
As in the case of a CVD device, electrons exist near the base 28, and even if the base 28 is charged, it is neutralized by these electrons, and there is no need for a means for neutralization as seen in conventional examples. .

Using the plasma injection CVD device which is the second embodiment of the present invention, the carrier gas is
As a result of conducting an experiment to form a high-hardness carbon film using Ar and CH ₄ as a monomer gas, it was found that a film comparable to that obtained when using the plasma injection CVD device according to the first embodiment of the present invention was formed. I was able to do that. At this time, a pair of opposing mesh-shaped electrodes 26
When the potential difference between _{(1) and (o)} was 0.5 KV or more, a spike-like DC discharge occurred between the electrodes. This DC discharge is unfavorable for plasma control and stability.
In order to form a homogeneous film, it must not be allowed to occur. The acceleration energy of ions that affects film quality is transferred to the mesh-shaped electrode 26 _(o) closest to the plasma blowing part 31.
Even if the potential difference required for film formation is larger than _the allowable potential difference between a pair of opposing mesh electrodes, which is limited by the generation of DC discharge, Since direct current discharge is less likely to occur as the distance between the electrodes becomes smaller, the necessary potential difference can be obtained by performing multi-stage acceleration as in the second embodiment of the present invention. The potential difference value at which DC discharge occurs is determined by various parameters such as the gas pressure and distance between the mesh electrodes, and the shape of the electrodes, and varies greatly depending on the device. For this reason, it is necessary to select the most suitable one depending on the potential difference required for film formation, equipment, and film formation conditions. For example, when forming a high-hardness carbon film using CH ₄ or Ar, the minimum required potential difference was 0.3 KV, and the allowable potential difference for generating a DC discharge under the film forming conditions was 0.5 KV, so one-stage acceleration was possible.

As described above, if a high hardness carbon film etc. is formed using the plasma injection CVD apparatus of the second embodiment of the present invention, the plasma injection CVD apparatus of the first embodiment of the present invention
The advantage of the injection CVD device is that the film formation speed is an order of magnitude faster than conventional methods, and film formation is possible even when the substrate temperature is room temperature, and the rise in substrate temperature is extremely small even after film formation. In addition, there is no need to install a special mechanism as a countermeasure against charging of the substrate, and film formation is possible even at ground potential without having to set the substrate 28 and the substrate mounting table 29 at a special potential. Therefore, it is easier to install it in an existing vacuum device, and the effect is great.

FIG. 4 is a partially enlarged view of the vicinity of the plasma blowing section in the third embodiment of the plasma injection CVD apparatus of the present invention. As for the structure and effect, the plasma generator of the first embodiment of the present invention provides a potential difference between the mesh-shaped electrode 18 provided in the plasma blowing part 23 and the base 17 or the base mounting table 24 so that at least one end is inside the plasma generating part. The third aspect of the present invention for injection/CVD equipment
In the plasma injection CVD apparatus of the embodiment, a mesh-shaped accelerating electrode 34 is installed near the base 35 installed in the second vacuum chamber, and is attached to the plasma blowing part 42 so that at least one end is inside the plasma generating part 41. Installed mesh accelerating electrode 33
The difference is that a potential difference is provided between the plasma injection CVD apparatus and the plasma injection CVD apparatus of the first embodiment of the present invention. If the base 35 is conductive, it is possible to set a potential directly on the base, and even if a potential is set on the base 36, the surface of the base 35 will have approximately the same potential as the base 36. Therefore, when a potential difference is provided between the two mesh-like accelerating electrodes, the ions in the plasma can have sufficient acceleration energy when they reach the substrate 35, corresponding to the potential difference. however,
When the base 35 is insulating, it is impossible to apply a potential directly to the base 35, and the base 36 is placed between the base 36 and the mesh accelerating electrode 33 provided in the plasma blowing part 42 at a low potential. A potential difference is provided so that the ions in the plasma are accelerated. At this time, since the acceleration energy of the ions is proportional to the potential gradient, sufficient acceleration energy corresponding to the potential difference cannot be obtained on the surface of the substrate 35. This tendency is more pronounced as the base body 35 becomes thicker, and the acceleration energy becomes smaller.

Therefore, a mesh-like accelerating electrode 34 is placed near the base 35.
By setting a potential difference between the mesh-shaped accelerating electrode 33 installed in the plasma blowing part 42 and the mesh-shaped accelerating electrode 34 near the base body 35 so that the potential is low, regardless of the conductivity and thickness of the base body 35. First, acceleration energy corresponding to the potential difference can be applied to ions in the plasma, making it possible to form a homogeneous film with good reproducibility. At this time, the smaller the distance between the mesh-like accelerating electrode 34 and the base 35, the greater the effect. If the mesh-shaped accelerating electrode 34 on the base 35 is kept stationary, a film having a mesh pattern is formed on the base 35. Therefore, a cam shaft and a vacuum motor 37 are installed at one end of the mesh-like accelerating electrode 34, and the mesh-like accelerating electrode 3
4 in parallel with the substrate 35, the mesh pattern of the formed film is removed and a uniform film is formed.

As described above, in the plasma injection CVD apparatus of the third embodiment of the present invention, when forming a film by accelerating ions in plasma, it is possible to form a film of the same quality regardless of the conductivity and thickness of the substrate 35. possible, and at this time the plasma of the first embodiment of the present invention
The advantages that occur in injection CVD equipment are not compromised in any way.

FIG. 5 is a partially enlarged view of the vicinity of the plasma blowing part in the fourth embodiment of the plasma injection CVD apparatus of the present invention. In FIG. 4, reference numeral 43 denotes a discharge prevention electrode, which is installed so as to cover the surface of the plasma tube 47 located in the vacuum chamber 50 and the plasma blowing part 49, and its potential is set to earth potential. In the plasma injection CVD apparatus according to the first embodiment of the present invention (see FIG. 1), when plasma is generated inside the plasma tube 13 made of a non-magnetic material such as quartz glass, the outside of the vacuum chamber 12 of the plasma tube 13 is RF power is applied from a high frequency power source 16 to a high frequency coil 14 wound around the portion of the high frequency coil 14 via a matching box 15. A part of the RF power applied at this time leaks into the vacuum chamber 12 from the surface of the plasma tube 13 located within the vacuum chamber 12 and from the plasma blowing section 23 . Inside the vacuum chamber 12 are needle valves 20,
The carrier gas and monomer gas metered in step 21 and introduced into the plasma tube 13 are transferred to the plasma blowing section 23.
Carrier gas and monomer gas flow out from the plasma tube 13, and although the pressure is lower than that in the plasma tube 13, carrier gas and monomer gas are present.
Depending on the quality of the film to be formed, the film formation speed, and the gas used, it may be necessary to increase the RF power applied to the high-frequency coil 14. At this time, as the RF power increases, the RF power leaking into the vacuum chamber 12 also increases, and finally discharge starts even within the vacuum chamber 12. When electric discharge occurs in the vacuum chamber 12, deposits not only form on the inner wall of the vacuum chamber 12 and cause contamination, but also when accelerating ions in the plasma to form a film, there is a possibility that there will be deposits between the mesh-like accelerating electrode 23 and the substrate 17 or the substrate installation stand 24. A potential difference is provided, but as the potential difference is increased, a pulsed DC discharge occurs, and when a leakage high-frequency discharge occurs in the vacuum chamber 12, a pulsed DC discharge occurs with a lower potential difference. This problem was solved by the plasma injection CVD apparatus of the fourth embodiment of the present invention shown in FIG. By covering the blowing part 49 with a discharge prevention electrode of earth potential, the RF power applied to the plasma generating part 48 to generate plasma leaks from the surface of the plasma tube 47 located in the vacuum chamber 50 and the plasma blowing part. Completely prevent this. This configuration makes it difficult to generate electric discharge in the vacuum chamber 50, and increases the range of possible changes in parameters involved in film formation (for example, using carrier gas Ar and monomer gas CH ₄ in plasma tube 47).
Maximum allowable power 0.6KW → 2.0KW when internal pressure is 0.4Ton,
Maximum allowable potential difference increased from 0.7KV to 15KV). Plasma injection according to the fourth embodiment of the present invention
The configuration of the CVD device can be applied not only to the plasma injection CVD device of the first embodiment of the present invention but also to the plasma injection CVD device of the second and third embodiments of the present invention.
Its configuration is shown in Figures 6 and 7.

FIG. 6 is a partially enlarged view of the vicinity of the plasma blowing section when the configuration of the plasma injection CVD apparatus according to the fifth embodiment of the present invention is applied to the plasma injection CVD apparatus according to the second embodiment of the present invention. Plasma generation section 53 and plasma blowing section 5
In the mesh-shaped accelerating electrodes 51 _{(1) to (o)} provided almost perpendicularly to the plasma flow in the plasma flow section 5, the mesh-shaped accelerating electrode 51 _(o) , which is at ground potential and is closest to the plasma blowing part 55, is deformed to create a vacuum. The surface of the plasma tube 52 located in the tank 58 is also coated and the discharge prevention electrode also serves as a structure, and the other structure is the same as that of the plasma injection CVD apparatus of the second embodiment of the present invention. This configuration makes it difficult for electric discharge to occur in the vacuum chamber 58, increases the variable range of parameters involved in film formation, and has a great practical effect.

FIG. 7 is a partially enlarged view of the vicinity of the plasma blowing section when the configuration of the plasma injection CVD apparatus according to the fifth embodiment of the present invention is applied to the plasma injection CVD apparatus according to the third embodiment of the present invention. A mesh-shaped accelerating electrode with a ground potential provided in the plasma blowing part 64 is deformed so that at least one end is located inside the plasma generating part 60, and
The surface of the plasma tube 59 located in the plasma tube 59 and the plasma blowing part 64 are completely covered and also serve as a discharge prevention electrode. be. This configuration allows leakage of RF in the vacuum chamber 65.
The power makes it difficult for electric discharge to occur, and the range in which the parameters involved in film formation can be changed increases, which has a great practical effect.

As described above, when the configuration of the fifth embodiment of the present invention is applied to the plasma injection CVD apparatus of the first, second, and third embodiments of the present invention, the advantages of the plasma injection CVD apparatus of each embodiment are lost. This makes it possible to change the film forming conditions over a wider range, which has a great practical effect.

Effects of the invention Plasma injection/CVD of the invention
The device consists of two vacuum chambers, the first vacuum chamber is electrodeless, inductively coupled, and made of non-magnetic material.
It is characterized by having a plasma blowing section facing the film forming substrate and plasma accelerating means for spraying plasma onto the film forming substrate installed in the first vacuum chamber. The resulting plasma is sprayed onto a film forming substrate placed in a second vacuum chamber while accelerating ions in the plasma by a plasma accelerating means. The plasma injection system of the present invention having this configuration
When a high-hardness carbon film is formed using a CVD device with carrier gas: Ar and monomer gas: CH ₄ , the film formation rate is an order of magnitude faster than conventional methods, and film formation is possible even when the substrate temperature is room temperature, and the substrate temperature does not rise significantly even after film formation. This has the effect that there is no need to install a special mechanism as a countermeasure against static electricity on the base. Further, since no discharge occurs in the second vacuum chamber in which the film-forming substrate is installed, there is no contamination, and by changing the shape of the plasma blowing part, it is possible to form a film in any desired range or shape. In addition, it is possible to set the plasma generation section, plasma blowing section, and plasma acceleration means in the first vacuum chamber, and the two vacuum chambers can be separated and detached, so they can be handled as a unit.
It can be easily installed in existing vacuum equipment without impairing its functionality.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a plasma injection CVD apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of an experiment using the first embodiment.
A characteristic diagram showing the results. FIG. 3 is a partially enlarged cross-sectional view showing the vicinity of the plasma blowing part in the second embodiment of the present invention. FIG. 4 is a partially enlarged cross-sectional view showing the vicinity of the plasma blowing part in the third embodiment of the present invention. 5 is a partially enlarged sectional view showing the vicinity of the plasma blowing part in the fourth embodiment of the present invention, and FIG. 6 is a partial enlarged sectional view showing the vicinity of the plasma blowing part in the fourth embodiment of the present invention, and FIG. A partially enlarged sectional view showing the vicinity of the plasma blowing part,
FIG. 7 is a partially enlarged sectional view showing the vicinity of the plasma blowing part when the configuration of the fifth embodiment of the present invention is applied to the third embodiment of the present invention, and FIG. 8 is a conventional plasma CVD.
A cross-sectional view showing the device, Figure 9 shows another conventional plasma
FIG. 2 is a cross-sectional view showing a CVD device. 13... Plasma tube, 14... High frequency coil,
17...Base, 18...Mesh-shaped accelerating electrode, 1
9...DC power supply, 23...Plasma blowing part, 24
...Base installation stand.

Claims (1)

[Claims] 1. A first vacuum chamber made of a non-magnetic material;
A high-frequency coil wound around the outside of the vacuum chamber, a plasma generation unit that converts the gas introduced into the first vacuum chamber into plasma through high-frequency inductive coupling, and a second vacuum chamber installed in the second vacuum chamber. a plasma blowing section facing the film forming substrate for spraying plasma onto the film forming substrate due to a pressure difference between the first vacuum chamber and the second vacuum chamber; an accelerating electrode provided in the plasma generating section; the accelerating electrode and the film forming substrate; Alternatively, a plasma injection CVD apparatus comprising plasma acceleration means that provides a potential difference between the accelerating electrode and the substrate mounting table so that the accelerating electrode has a high potential. 2. The plasma accelerating means is in the plasma generating part.
A plurality of accelerating electrodes are set almost perpendicularly to the plasma flow, and a potential difference is provided between each of the opposing accelerating electrodes so that the accelerating electrode located closer to the plasma blowing part has a lower potential. The plasma injection CVD apparatus according to claim 1, characterized in that the nearest accelerating electrode is at ground potential. 3 Plasma acceleration means 2 in the plasma generation part
A plurality of accelerating electrodes are set almost perpendicular to the flow of plasma, and accelerating electrodes are also provided in a second vacuum near the film forming substrate so as to face the plasma blowing part, and a film is formed between each of the facing accelerating electrodes. 2. The plasma injection CVD apparatus according to claim 1, wherein a potential difference is provided so that an accelerating electrode close to the substrate has a low potential. 4. The plasma injection system according to claim 3, characterized in that an accelerating electrode facing a plasma blowing section provided in the second vacuum chamber near the film forming substrate continuously moves in parallel with the film forming substrate.・
CVD equipment. 5. A first vacuum chamber equipped with a plasma generating section, a plasma blowing section, and a plasma accelerating means removes the surface of the first vacuum chamber located in the second vacuum chamber in which the film forming substrate is installed from a conductive material at an earth potential. The plasma injection CVD apparatus according to claim 1, characterized in that the plasma injection CVD apparatus is coated with a discharge prevention electrode.