JPS56147438A - Microplasma treatment apparatus - Google Patents

Microplasma treatment apparatus

Info

Publication number
JPS56147438A
JPS56147438A JP5082680A JP5082680A JPS56147438A JP S56147438 A JPS56147438 A JP S56147438A JP 5082680 A JP5082680 A JP 5082680A JP 5082680 A JP5082680 A JP 5082680A JP S56147438 A JPS56147438 A JP S56147438A
Authority
JP
Japan
Prior art keywords
microwave
plasma
treatment apparatus
magnetic field
transport tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5082680A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5082680A priority Critical patent/JPS56147438A/en
Publication of JPS56147438A publication Critical patent/JPS56147438A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To speed up and ensure the starting of a microwave treatment apparatus by providing an electromagnet near the joint of a wave guide and a plasma transport tube, on the periphery thereof, in order to cause the synchrotron movement of electrons. CONSTITUTION:The order of 0.001-1Torr of CF4 mixed with approximately 5% O2 is introduced to a plasma transport tube 5, which is supplied with a microwave from a microwave oscillator 1 through a waveguide 2, and a magnetic field of 1.5-2 kilogauss is applied to an electromagnet 13 or 13'. Consequently, plasma is generated in a moment and continues to exist if the magnetic field is switched off. At this time, the matching of the microwave circuit becomes stable, so that the protection thereof and the improvement in accuracy of plasma treatment can be attained.
JP5082680A 1980-04-16 1980-04-16 Microplasma treatment apparatus Pending JPS56147438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5082680A JPS56147438A (en) 1980-04-16 1980-04-16 Microplasma treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5082680A JPS56147438A (en) 1980-04-16 1980-04-16 Microplasma treatment apparatus

Publications (1)

Publication Number Publication Date
JPS56147438A true JPS56147438A (en) 1981-11-16

Family

ID=12869565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5082680A Pending JPS56147438A (en) 1980-04-16 1980-04-16 Microplasma treatment apparatus

Country Status (1)

Country Link
JP (1) JPS56147438A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130097A (en) * 1983-01-14 1984-07-26 古河電気工業株式会社 Method of generating discharge plasma
JPS6053025A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Dry etching method
JPS622244U (en) * 1985-06-19 1987-01-08
JPS62120738A (en) * 1985-11-20 1987-06-02 Nec Corp Pilot signal transmission and reception equipment
JPS63116399A (en) * 1986-11-04 1988-05-20 三菱電機株式会社 Microwave plasma generator
JPH03232224A (en) * 1990-02-07 1991-10-16 Mitsubishi Electric Corp Plasma processor
JPH097999A (en) * 1995-06-20 1997-01-10 Shibaura Eng Works Co Ltd Dry etching apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171597A (en) * 1974-12-18 1976-06-21 Hitachi Ltd IONKAKOSOCHI
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171597A (en) * 1974-12-18 1976-06-21 Hitachi Ltd IONKAKOSOCHI
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130097A (en) * 1983-01-14 1984-07-26 古河電気工業株式会社 Method of generating discharge plasma
JPS6053025A (en) * 1983-09-02 1985-03-26 Hitachi Ltd Dry etching method
JPH0452613B2 (en) * 1983-09-02 1992-08-24 Hitachi Ltd
JPS622244U (en) * 1985-06-19 1987-01-08
JPS62120738A (en) * 1985-11-20 1987-06-02 Nec Corp Pilot signal transmission and reception equipment
JPS63116399A (en) * 1986-11-04 1988-05-20 三菱電機株式会社 Microwave plasma generator
JPH03232224A (en) * 1990-02-07 1991-10-16 Mitsubishi Electric Corp Plasma processor
JPH097999A (en) * 1995-06-20 1997-01-10 Shibaura Eng Works Co Ltd Dry etching apparatus

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