JPS55154581A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS55154581A
JPS55154581A JP6257779A JP6257779A JPS55154581A JP S55154581 A JPS55154581 A JP S55154581A JP 6257779 A JP6257779 A JP 6257779A JP 6257779 A JP6257779 A JP 6257779A JP S55154581 A JPS55154581 A JP S55154581A
Authority
JP
Japan
Prior art keywords
gas
ion
etching
change
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6257779A
Other languages
Japanese (ja)
Inventor
Katsuo Sumino
Haruo Okano
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6257779A priority Critical patent/JPS55154581A/en
Publication of JPS55154581A publication Critical patent/JPS55154581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable to prevent an unnecessary ion irradiation, by detecting the finish from the change of gas composition currounding the film to be etched, on occasion of etching by ion drawn out from mixed plasma composed of reactive gas. CONSTITUTION:Apparatus is made vacuous by exhausting residual gas from the exhaust opening 68 of the lower part of the main body 51 and closed looped rectangular electromagnetic field is generated along the annular slit 59 by applying voltage between the anode terminal 62 and the earthed vessel 55. Next, plasma is generated by introducing at least two kinds or more of plasma generating gas, for example, C2F6 and SiF4, from the gas introducing opening 63 and positive ion is discharged from the discharge opening 60 and then, etching of the material to be etched 67 placed on the sample board 54, is carried out by ion beam. Change of the gas component surrounding the silicon oxide film 67c, that is, the change of residual gas component in the processing room at the above etching process, is pursued by the mass spectrometer 69 and exposure of the polysilicon film 67b, that is, etching end point, is detected and then, irradiation of ion beam is stopped.
JP6257779A 1979-05-23 1979-05-23 Ion etching method Pending JPS55154581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6257779A JPS55154581A (en) 1979-05-23 1979-05-23 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6257779A JPS55154581A (en) 1979-05-23 1979-05-23 Ion etching method

Publications (1)

Publication Number Publication Date
JPS55154581A true JPS55154581A (en) 1980-12-02

Family

ID=13204296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6257779A Pending JPS55154581A (en) 1979-05-23 1979-05-23 Ion etching method

Country Status (1)

Country Link
JP (1) JPS55154581A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225638A (en) * 1982-06-24 1983-12-27 Toshiba Corp Detection of etching end
JPS61264729A (en) * 1985-05-20 1986-11-22 Matsushita Electronics Corp Etching method
JPS62142326A (en) * 1985-12-17 1987-06-25 Matsushita Electronics Corp Etching method
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US5820693A (en) * 1994-01-27 1998-10-13 Patchett; Joseph A. Process for recovering catalysts supports
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
DE102020210117A1 (en) 2020-08-11 2022-02-17 Robert Bosch Gesellschaft mit beschränkter Haftung Piezo device and method for structuring at least one piezo element, in particular a piezo device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225638A (en) * 1982-06-24 1983-12-27 Toshiba Corp Detection of etching end
JPH0454968B2 (en) * 1982-06-24 1992-09-01 Tokyo Shibaura Electric Co
JPS61264729A (en) * 1985-05-20 1986-11-22 Matsushita Electronics Corp Etching method
JPS62142326A (en) * 1985-12-17 1987-06-25 Matsushita Electronics Corp Etching method
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6399514B1 (en) 1991-06-27 2002-06-04 Applied Materials, Inc. High temperature silicon surface providing high selectivity in an oxide etch process
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US5820693A (en) * 1994-01-27 1998-10-13 Patchett; Joseph A. Process for recovering catalysts supports
DE102020210117A1 (en) 2020-08-11 2022-02-17 Robert Bosch Gesellschaft mit beschränkter Haftung Piezo device and method for structuring at least one piezo element, in particular a piezo device

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