JPH0454968B2 - - Google Patents
Info
- Publication number
- JPH0454968B2 JPH0454968B2 JP57108801A JP10880182A JPH0454968B2 JP H0454968 B2 JPH0454968 B2 JP H0454968B2 JP 57108801 A JP57108801 A JP 57108801A JP 10880182 A JP10880182 A JP 10880182A JP H0454968 B2 JPH0454968 B2 JP H0454968B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- organic layer
- end point
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 41
- 239000012044 organic layer Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000001819 mass spectrum Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、ドライエツチング技術に係わり、特
に有機物層エツチングにおけるエツチング終点検
出方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to dry etching technology, and particularly to a method for detecting an etching end point in etching an organic layer.
近時、半導体集積回路は微細化の一途を辿り
増々高密度化されているが、使用される薄膜の膜
厚はパターンの微細化程には薄くなつていない。
このため、例えばAl配線形成時においては、下
地表面に１〔μｍ〕近い段差が形成されており、
この段差上に微細なAl配線パターンを精度良く
形成することが困難となつている。
In recent years, semiconductor integrated circuits have become increasingly finer and more dense, but the thickness of the thin films used has not become thinner to the same extent as patterns have become finer.
For this reason, for example, when forming Al wiring, a step of nearly 1 [μm] is formed on the underlying surface.
It has become difficult to accurately form fine Al wiring patterns on this step.
上記Al配線パターンを形成するには、一般に
フオトリソグラフイ技術が用いられるが、この技
術では段差のある表面に形成したフオトレジスト
を精度良くパターニングすることはできない。す
なわち、第１図ａに示す如くシリコン基板４上に
シリコン酸化膜２を選択的に形成したのち、該酸
化膜２の段差のある表面にフオトレジスト３を塗
布した場合、レジスト３の膜厚は段差上部におい
て薄く段差底部において厚くなる。この状態で転
写機を用いてレジスト３の露光及び現像を行う
と、レジスト膜厚差以外に下地段差からの反射の
効果も加わり、レジスト３のパターン幅が第１図
ｂに示す如く段差底部において太く段差上部にお
いて細くなる。そして、このパターン幅の変動が
Al配線等のパターン精度低下の要因となつてい
る。 Although photolithography technology is generally used to form the Al wiring pattern, this technology cannot accurately pattern a photoresist formed on a surface with steps. That is, when a silicon oxide film 2 is selectively formed on a silicon substrate 4 as shown in FIG. It is thinner at the top of the step and thicker at the bottom of the step. When the resist 3 is exposed and developed using a transfer machine in this state, in addition to the difference in resist film thickness, the effect of reflection from the underlying step is added, and the pattern width of the resist 3 is changed at the bottom of the step as shown in Figure 1b. It is thick and becomes thinner at the top of the step. And this variation in pattern width is
This is a factor in reducing the pattern accuracy of Al wiring, etc.
このような問題を解決するために、最近３層構
造を使用したリソグラフイー技術が研究開発され
ている。この技術では、まず第２図ａに示す如く
段差上に形成された配線パターン形成用のAl7膜
４上に予め有機物層５を表面平坦化可能な程度に
厚く塗布した後、同図ｂに示す如く酸素プラズマ
に対して安定なSiやSiO2等のスペーサ膜６を低
温で堆積する。次いで、第２図ｃに示す如くスペ
ーサ膜６上にレジスト７を塗布し、フオトリソグ
ラフイ工程によつてレジスト７をパターニングし
てレジストパターンを形成する。このレジストパ
ターン形成時には、有機物層５によつて段差が平
坦化されているため、前記第１図ｂに示したパタ
ーン幅変動の現象は起こらない。 In order to solve these problems, lithography techniques using a three-layer structure have recently been researched and developed. In this technique, first, as shown in Fig. 2a, an organic material layer 5 is coated in advance on the Al7 film 4 for forming a wiring pattern formed on a step, thick enough to flatten the surface, and then as shown in Fig. 2b. A spacer film 6 made of Si, SiO 2 or the like, which is stable against oxygen plasma, is deposited at a low temperature. Next, as shown in FIG. 2c, a resist 7 is applied onto the spacer film 6, and the resist 7 is patterned by a photolithography process to form a resist pattern. At the time of forming this resist pattern, since the steps are flattened by the organic layer 5, the pattern width variation phenomenon shown in FIG. 1B does not occur.
次いでレジスト７をマスクとしてスペーサ膜６
のエツチングを行ない、続いて平行平板型ドライ
エツチング装置を用いスペーサ膜６をマスクとし
て酸素プラズマによる有機物層５のエツチングを
行ない、第２図ｄに示す如くAl配線用のマスク
パターンを形成する。かくして形成されたマスク
パターンは下地段差の影響によるパターン幅変動
もなく、極めて精度良いものとなる。したがつ
て、後続するAl膜４のパターニングを高精度に
行うことができる。 Next, using the resist 7 as a mask, the spacer film 6
Then, using a parallel plate type dry etching apparatus and using the spacer film 6 as a mask, the organic layer 5 is etched with oxygen plasma to form a mask pattern for Al wiring as shown in FIG. 2d. The mask pattern thus formed has extremely high accuracy without any variation in pattern width due to the influence of the underlying level difference. Therefore, the subsequent patterning of the Al film 4 can be performed with high precision.
しかしながら、この種の方法にあつては次のよ
うな問題があつた。すなわち、前記スペーサ膜６
をマスクとする有機物層５のドライエツチングに
おいて、有機物層５のエツチング終了を検知する
ことができない。このため、有機物層５のオーバ
エツチングが必要となり、このオーバエツチング
に起因して有機物層パターンの幅が狭くなる等の
不都合を招いた。 However, this type of method has the following problems. That is, the spacer film 6
In the dry etching of the organic layer 5 using the mask as a mask, the end of etching of the organic layer 5 cannot be detected. Therefore, it is necessary to over-etch the organic layer 5, and this over-etching causes problems such as narrowing the width of the organic layer pattern.
なお、同様な技術であるレジストの灰化の場合
は、レジストの酸化生成物であるCOやCO2等の
発光分光によりエツチング終点を検出できること
が報告されている。ところが本技術のようなスペ
ーサ膜６をマスクとした有機物層５の方向性エツ
チングの場合、一般に10-2〔Torr〕以下の低圧が
使用されるため、有機物は酸化されずほとんどス
パツタエツチングされている。このため、エツチ
ング終点前後においてCOやCO2等の発光はモニ
ターに使える程変化せず、したがつて有機物層５
のエツチング終点を検出することはできないので
ある。 In the case of resist ashing, which is a similar technique, it has been reported that the end point of etching can be detected by emission spectroscopy of CO, CO 2, etc., which are oxidation products of the resist. However, in the case of directional etching of the organic material layer 5 using the spacer film 6 as a mask as in the present technique, a low pressure of 10 -2 [Torr] or less is generally used, so the organic material is not oxidized and is almost sputter etched. There is. For this reason, the emission of CO, CO2 , etc. does not change enough to be used as a monitor before and after the etching end point, and therefore the organic layer 5
It is not possible to detect the end point of etching.
本発明の目的は、３層構造を用いたリソグラフ
イー等において有機物層パターン形成時の有機物
層エツチングに際し、有機物層のエツチング終
点、を容易かつ正確に検出することができるエツ
チング終点検出方法を提供することにある。
An object of the present invention is to provide an etching end point detection method that can easily and accurately detect the etching end point of an organic layer when etching an organic layer pattern during formation of an organic layer pattern in lithography using a three-layer structure. There is a particular thing.
本発明の骨子は有機物層のエツチングに際し、
C+（ｍ／ｅ＝12）の質量スペクトル強度の変化を
測定することにある。
The gist of the present invention is that when etching an organic layer,
The objective is to measure changes in the mass spectrum intensity of C + (m/e=12).
すなわち、酸素プラズマによる有機物層のエツ
チング終点を検出する目的で本発明者等が鋭意研
究を重ねた結果、C+（ｍ／ｅ＝12）のシグナル強
度がエツチング終点前後で著しく変化することを
見出した。 That is, as a result of extensive research by the present inventors for the purpose of detecting the end point of etching of an organic layer by oxygen plasma, it was discovered that the signal intensity of C + (m/e = 12) changes significantly before and after the etching end point. Ta.
第３図は平行平板型ドライエツチング装置を用
いO2圧力0.1〔Torr〕、印加rf電力250〔Ｗ〕下の条
件で有機物試料をエツチングしたときの各種の質
量スペクトル強度分布を示す特性図である。図
中、破線は試料をエツチング室内に入れず空で放
電を行なつた場合であり、実線は試料を入れた場
合である。CO+（ｍ／ｅ＝28）やCO2 +（ｍ／ｅ＝
44）等のシグナル強度もいく分変化するが、C+
（ｍ／ｅ＝12）の変化が最も著しい。第４図はエ
ツチング室内に有機物試料を入れエツチングを行
うと共に、ｍ／ｅ＝12に質量分析器を固定したと
きのシグナル強度の経時変化を示す特性図であ
る。この図からもエツチング終点を境として強度
変化が大きいことが判る。したがつて、C+（ｍ／
ｅ＝12）のスペクトル強度変化を測定し、この変
化が所定値を越えるとき、エツチング終点と判定
できることになる。 Figure 3 is a characteristic diagram showing various mass spectral intensity distributions when an organic sample is etched using a parallel plate dry etching device under conditions of O 2 pressure of 0.1 [Torr] and applied RF power of 250 [W]. . In the figure, the broken line indicates the case where the discharge was performed in an empty etching chamber without placing the sample in it, and the solid line indicates the case where the sample was placed in the etching chamber. CO + (m/e=28) and CO 2 + (m/e=
44), etc., the signal strength also changes somewhat, but C +
(m/e=12) is the most significant change. FIG. 4 is a characteristic diagram showing the change in signal intensity over time when an organic sample is placed in the etching chamber and etched, and the mass spectrometer is fixed at m/e=12. It can also be seen from this figure that the intensity changes greatly from the etching end point as a boundary. Therefore, C + (m/
e=12), and when this change exceeds a predetermined value, it can be determined that the etching end point has been reached.
本発明はこのような点に着目し、酸素ガスを使
用するドライエツチング装置を用いて有機物層を
エツチングするに際し、C+（ｍ／ｅ＝12）の質量
スペクトル強度の変化を測定し、このスペクトル
強度の変化に基づいて上記有機物層のエツチング
終点を検出するようにした方法である。 The present invention focuses on these points, and when etching an organic layer using a dry etching device using oxygen gas, changes in the mass spectrum intensity of C + (m/e = 12) are measured, and this spectrum is This method detects the etching end point of the organic layer based on the change in intensity.
前記スペーサ膜等をマスクとした有機物層のエ
ツチングにおいては、パターン変換差が最も重要
である。有機物層の膜厚は、前記第２図ａに示す
如く、段差上部において薄く、底部において厚
い。それ故、段差上部はオーバエツチングされる
ことになる。さらに、従来有機物層のエツチング
終点が判らないため、必要以上にオーバエツチン
グを続けなければならなかつた。ところが、本発
明によればC+（ｍ／ｅ＝12）のスペクトル強度変
化から有機物層のエツチング終点を容易、かつ正
確に検出できるので、オーバエツチングの時間を
必要最小限に抑えることが可能となり、マスク寸
法に忠実な有機物層パターンを製作することがで
きる。したがつて、３層構造を使用するリソグラ
フイーによりAl配線パターン等を高精度に形成
することができる。また、エツチング終点を電気
的に検出できることから、ドライエツチング装置
の制御の自動化をはかり得る等の効果を奏する。
In etching an organic layer using the spacer film or the like as a mask, the difference in pattern conversion is most important. The thickness of the organic layer is thinner at the top of the step and thicker at the bottom, as shown in FIG. 2a. Therefore, the upper part of the step will be overetched. Furthermore, conventionally, the end point of etching the organic layer cannot be determined, so over-etching has to be continued longer than necessary. However, according to the present invention, the etching end point of the organic layer can be easily and accurately detected from the change in the spectral intensity of C + (m/e=12), making it possible to minimize the overetching time. , it is possible to produce an organic layer pattern that is faithful to the mask dimensions. Therefore, Al wiring patterns and the like can be formed with high precision by lithography using a three-layer structure. Furthermore, since the end point of etching can be electrically detected, it is possible to automate the control of the dry etching apparatus.
以下、本発明の実施例を前記第２図ａ〜ｄを参
照して説明する。
Embodiments of the present invention will be described below with reference to FIGS. 2a to 2d.
まず、Ｐ型（100）シリコン基板１を20枚準備
し、1000〔℃〕湿式酸化によりシリコン基板４上
に１〔μｍ〕の熱酸化膜２を形成した。次いで、
ポジ型フオトレジストを用いてラインアンドスペ
ースパターンを形成し、反応性イオンエツチング
法（CF4／H2混合ガス、印加高周波電力200W、
圧力0.04Torr）で酸化膜２のエツチングを行な
い、シリコン基板１上に酸化膜２による凹凸を形
成した。次いで、第２図ａに示す如くAl膜４を
堆積し、このAl膜４上に有機物層５としてのポ
ジ型フオトレジスト（OFPA−800、50cp・東京
応化社製）を3000回転で回転塗布し、段差の平坦
化を行つた。続いて、プラズマCVD法（SiN4／
N2O比１：１、流量50ml／min、常温、印加高周
波電力300W）により、第２図ｂに示す如くスペ
ーサ膜６としてのシリコン酸化膜を形成し、該膜
６上にポジ型フオトレジスト７（OFPR−800、
30ep東京応化社製）を回転塗布した。 First, 20 P-type (100) silicon substrates 1 were prepared, and a thermal oxide film 2 of 1 [μm] thick was formed on the silicon substrates 4 by wet oxidation at 1000 [°C]. Then,
A line-and-space pattern was formed using a positive photoresist, and reactive ion etching (CF 4 /H 2 mixed gas, applied high frequency power of 200 W,
The oxide film 2 was etched at a pressure of 0.04 Torr) to form irregularities of the oxide film 2 on the silicon substrate 1. Next, an Al film 4 was deposited as shown in FIG. , the steps were flattened. Next, plasma CVD method (SiN 4 /
A silicon oxide film is formed as a spacer film 6 as shown in FIG. 7 (OFPR-800,
30ep manufactured by Tokyo Ohka Co., Ltd.) was applied by spin coating.
次に、通常のフオトリソグラフイにより第２図
ｃに示す如くレジスト７のパターニングを行つ
た。次いで、ドライエツチング装置（ランパス
２、日本光学社製）を用い、上記試料内の９箇
所、１箇所５点の合計45箇所で、２〔μｍ〕巾の
パターン寸法をスペーサ膜６に転写した。このよ
うな試料を10枚ずつＡ、Ｂの２つの群に分け、Ａ
群はポジ型レジストのエツチング速度で膜厚を割
つてエツチング所要時間を算出し、30％のオーバ
エツチングを見込んで算出されたエツチング所要
時間の1.3倍の時間エツチングを行つた。一方、
Ｂ群は本発明の終点検出方法を使用し、終点検出
後１分のオーバエツチング時間を見込んでエツチ
ングを行なつた。エツチングには平行平板型ドラ
イエツチング装置を使用し、O2圧力0.01〔Torr〕、
印加高周波電力250〔Ｗ〕、O2流量15〔ml／min〕と
した。 Next, the resist 7 was patterned by ordinary photolithography as shown in FIG. 2c. Next, using a dry etching device (Lampus 2, manufactured by Nippon Kogaku Co., Ltd.), a pattern with a width of 2 [μm] was transferred onto the spacer film 6 at a total of 45 locations, 9 locations within the sample and 5 locations at each location. Divide these samples into two groups of 10 each, A and B.
For the group, the required etching time was calculated by dividing the film thickness by the etching speed of the positive resist, and etching was performed for 1.3 times the etching time calculated assuming 30% overetching. on the other hand,
For group B, etching was performed using the end point detection method of the present invention, allowing an overetching time of 1 minute after end point detection. A parallel plate type dry etching device was used for etching, and O 2 pressure was 0.01 [Torr].
The applied high-frequency power was 250 [W] and the O 2 flow rate was 15 [ml/min].
エツチング後全試料を顕微鏡で観察したとこ
ろ、全試料のエツチング残りは認められなかつ
た。これらの試料を弗化アンモニウム水溶液に浸
漬してスペーサ膜６を剥離後、試料内９箇所45点
の寸法を測定し、エツチング前のレジスト７の寸
法と比較すると、平均パターン交換差Ｔおよび偏
差σは、Ａ群はＴ＝0.3〔μｍ〕、σ＝0.06〔μｍ〕、
Ｂ群はＴ＝01〔μｍ〕、σ＝0.02〔μｍ〕であり、
明らかにＢ群の方が良好な結果を示した。 When all the samples were observed under a microscope after etching, no etching residue was observed in any of the samples. After immersing these samples in an aqueous ammonium fluoride solution and peeling off the spacer film 6, the dimensions at 45 points at 9 locations within the sample were measured, and when compared with the dimensions of the resist 7 before etching, the average pattern exchange difference T and deviation σ For group A, T = 0.3 [μm], σ = 0.06 [μm],
Group B has T=01 [μm], σ=0.02 [μm],
Group B clearly showed better results.
なお、本発明は上述した実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で、種々
変形して実施することができる。例えば、前記有
機物層はポジ型フオトレジストに限るものではな
く、その他各種の有機物を用いることができる。
また、必ずしも３層構造方式のフオトリソグラフ
イに限定されるものではなく、有機物層のエツチ
ング全般に適用できるのは勿論のことである。 Note that the present invention is not limited to the embodiments described above, and can be implemented with various modifications without departing from the gist thereof. For example, the organic material layer is not limited to a positive photoresist, and various other organic materials can be used.
Furthermore, the present invention is not necessarily limited to photolithography with a three-layer structure, and can of course be applied to etching of organic layers in general.
第１図ａ，ｂは段差上での通常のフオトリソグ
ラフイ工程によるパターン形成の問題点を説明す
るための断面図及び平面図、第２図ａ〜ｄは段差
上で３層構造のリソグラフイーを用いたレジスト
パターン形成工程を示す断面図、第３図は有機膜
エツチング時の質量スペクトル分布の一例を示す
特性図、第４図は有機物のエツチング時における
質量数12（ｍ／ｅ＝12）のシグナル強度の経時変
化を示す特性図である。
１……シリコン基板、２……シリコン酸化膜、
３……フオトレジスト、４……Al膜、５……有
機物層、６……スペーサ膜、７……フオトレジス
ト。
Figures 1a and b are cross-sectional views and plan views for explaining the problems of pattern formation using a normal photolithography process on a step, and Figures 2a to d are 3-layer lithography steps on a step. 3 is a characteristic diagram showing an example of the mass spectral distribution during etching of an organic film, and FIG. 4 is a cross-sectional view showing the resist pattern forming process using etching. FIG. 2 is a characteristic diagram showing changes in signal intensity over time. 1...Silicon substrate, 2...Silicon oxide film,
3...Photoresist, 4...Al film, 5...Organic layer, 6...Spacer film, 7...Photoresist.
Claims (1)
ング装置を用いて有機物層をエツチングするに際
し、C+（ｍ／ｅ＝12）の質量スペクトル強度の変
化を測定し、このスペクトル強度の変化に基づい
てエツチングの終点を検出することを特徴とする
エツチング終点検出方法。1. When etching an organic layer using a dry etching device that uses oxygen as a reactive gas, the change in the mass spectrum intensity of C + (m/e = 12) is measured, and the etching process is determined based on the change in the spectrum intensity. An etching end point detection method characterized by detecting an end point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10880182A JPS58225638A (en) | 1982-06-24 | 1982-06-24 | Detection of etching end |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10880182A JPS58225638A (en) | 1982-06-24 | 1982-06-24 | Detection of etching end |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225638A JPS58225638A (en) | 1983-12-27 |
| JPH0454968B2 true JPH0454968B2 (en) | 1992-09-01 |
Family
ID=14493820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10880182A Granted JPS58225638A (en) | 1982-06-24 | 1982-06-24 | Detection of etching end |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225638A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0754808B2 (en) * | 1986-01-17 | 1995-06-07 | 東京エレクトロン株式会社 | Ashing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5364636A (en) * | 1976-11-22 | 1978-06-09 | Nippon Telegraph & Telephone | Dry etching device |
| JPS55154581A (en) * | 1979-05-23 | 1980-12-02 | Toshiba Corp | Ion etching method |
-
1982
- 1982-06-24 JP JP10880182A patent/JPS58225638A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5364636A (en) * | 1976-11-22 | 1978-06-09 | Nippon Telegraph & Telephone | Dry etching device |
| JPS55154581A (en) * | 1979-05-23 | 1980-12-02 | Toshiba Corp | Ion etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58225638A (en) | 1983-12-27 |
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