JPS58212136A - Forming method for ultrafine pattern - Google Patents
Forming method for ultrafine patternInfo
- Publication number
- JPS58212136A JPS58212136A JP9407882A JP9407882A JPS58212136A JP S58212136 A JPS58212136 A JP S58212136A JP 9407882 A JP9407882 A JP 9407882A JP 9407882 A JP9407882 A JP 9407882A JP S58212136 A JPS58212136 A JP S58212136A
- Authority
- JP
- Japan
- Prior art keywords
- film
- carbon
- mask
- resist
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims description 76
- 238000005530 etching Methods 0.000 claims description 20
- 238000001020 plasma etching Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 abstract description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018523 Al—S Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 241000272201 Columbiformes Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
との発明は微細パターンの形成方法にかかり、特に半導
体素子の製造における微細パターンの形成方法の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The invention relates to a method for forming a fine pattern, and more particularly to an improvement in a method for forming a fine pattern in the manufacture of semiconductor devices.
（発明の技術的背景〕
薄膜を微細パターンに加工する手段として反応性イオン
エツチング法が広（用いられるようになった。反応性イ
オンエツチングは反応性のイオンビームを被エツチング
膜に垂ｍＫ照射させ、化学反応とスパッタリング現象と
を併用させてエツチングを行なわせるものである。この
とき、マスクとなっているレジスト膜の側面に被エツチ
ング物またはこの反応物が堆積してしまうことがあり、
仁の堆積物がレジスト除去１楊で完全に除去しきれない
ことがある。以下にこの問題が最も顕著であるアルミニ
ウム膜について述べる。(Technical background of the invention) Reactive ion etching has become widely used as a means of processing thin films into fine patterns.Reactive ion etching involves irradiating a film to be etched with a reactive ion beam at mK. Etching is performed by using a combination of chemical reaction and sputtering phenomenon. At this time, the material to be etched or the reactant may accumulate on the side surface of the resist film that serves as a mask.
The deposits may not be completely removed by one resist removal process. The aluminum film in which this problem is most noticeable will be described below.
半導体素子の製造過程の一部を示す第１図ないし第４図
に右いて、（１）はシリコン基板、（２１ｔｉ前記シリ
コン基板の１主面に形成された８ｉ０．膜、（３）は前
記５ｉＯＪＫ被着された膜厚ｌｐｍ ＯＡ！ −８ｉ膜
、（４）は前記ｋｌ−８ｉ膜に積層して被着された膜厚
１μｍのフォトレジスト膜（以下レジスト膜と略称）（
第１図）で、上記レジスト膜（４）Ｋパターニングを施
して所定パターンのレジスト膜（４つに形成したのちＣ
Ｃ／４ とＣｔ、の混合ガスプラズマでＡ１８ｉ合金
膜に反応性イオンエツチングを施す（第２図）。1 to 4 showing a part of the manufacturing process of a semiconductor device, (1) is a silicon substrate, (21ti is an 8i0. film formed on one main surface of the silicon substrate, and (3) is the above-mentioned silicon substrate. 5i OJK deposited film thickness lpm OA!-8i film, (4) is a 1 μm thick photoresist film (hereinafter abbreviated as resist film) laminated and deposited on the kl-8i film (
(Fig. 1), the above resist film (4) K patterning is applied to the resist film (4) of a predetermined pattern (after forming into four, C
Reactive ion etching is applied to the A18i alloy film using a mixed gas plasma of C/4 and Ct (Figure 2).
叙上においてレジスト膜はポジタイプのものが用いられ
ることが多く、側面は急峻になって１）る。In the above, a positive type resist film is often used, and the side surfaces are steep (1).
これＫより上記反応性イオンエツチングの終了時には第
３図に示すようにレジスト側面には堆積層（５１、（５
）が形成され、レジストを除去しても第４図に示すよう
にそのまま残留する。From this K, when the reactive ion etching is completed, as shown in FIG.
) is formed and remains as it is as shown in FIG. 4 even if the resist is removed.
叙上の従来の技術による堆積層を残留すると、この上に
絶縁膜を形成する際に絶縁膜が異常成長したり、堆積層
が破損して倒れて隣接のアルミニウム配線層と短絡した
りなどする重大な問題がある。上記堆積層はアルミニウ
ムのエツチング液を用いて除去することもできるが、微
細パターンにおいて鉱パターンの精度が悪化するので適
用できない。If the deposited layer formed by the conventional technology described above remains, the insulating film may grow abnormally when an insulating film is formed on top of it, or the deposited layer may be damaged and fall down, resulting in a short circuit with the adjacent aluminum wiring layer. There is a serious problem. The deposited layer can be removed using an aluminum etching solution, but this is not applicable because the precision of the ore pattern deteriorates in fine patterns.
この発明社上記従来の技術の問題点に鑑み半導体素子の
製造における微細パターンの改良された゛製造方法を提
供する。In view of the problems of the prior art described above, the present invention provides an improved manufacturing method for fine patterns in the manufacturing of semiconductor devices.
〔発明の概要〕
この発明にかかる微細パターンの形成方法は、マスクに
よって被膜にエツチングを施し微細パターンを形成する
方法において、マスク材にカーボン薄膜を用い反応性イ
オンエツチングによってエツチングを施すことを特徴と
するものである。[Summary of the Invention] A method for forming a fine pattern according to the present invention is a method for forming a fine pattern by etching a film using a mask, and is characterized in that a carbon thin film is used as a mask material and etching is performed by reactive ion etching. It is something to do.
上に述べた堆積層についてその成因を考究すると、マス
クになるべきレジスト膜の膜厚が厚いことがあげられる
。しかし、レジスト膜では膜厚を低減するとピンホール
の発生をはじめ種々の問題が発生する。そこで発明者は
レジスト膜とＡｌ −Ｓ ｉ膜との間に適当なマスク材
を介挿させることを案出した。そして、マスク材として
はｋｔ −Ｓ ｉ膜のエツチング時にはＡｌ−８ｉとの
エツチング選択比が太き（、かつ、このマスク材を除去
する時に４ｄＡ／・Ｓｉ膜と下地のＳｉｎ、 膜と充分
大きいエツチング選択比がとれるものが望ましいとして
種々検討の結果カーボン膜が最も好適することを認めた
。When considering the cause of the above-mentioned deposited layer, it can be said that the thickness of the resist film that is to be used as a mask is thick. However, when the thickness of a resist film is reduced, various problems such as the formation of pinholes occur. Therefore, the inventor devised a method of interposing a suitable mask material between the resist film and the Al--Si film. As a mask material, when etching the kt-Si film, the etching selectivity with Al-8i is large (and when removing this mask material, the etching selectivity between the Si film and the underlying Sin film is sufficiently large. As a result of various studies, it was found that a carbon film is most suitable because it is desirable to have a good etching selectivity.
以下に第５図ないし第８図によって１実施例を説明する
。まずｌ実施例のカーボン膜の被着は第５図に示される
ように、ｌｙＭＩを尖らせた第１のカーボン棒（１０ａ
）の、：：尖端を第２のカーボン棒（ｔａｂ）に軽く押
しつけつつ通電放電させる、いイ）ゆるアーク放電を施
すとき、接触部（１０Ｃ）からカーボンの蒸発をみる。One embodiment will be described below with reference to FIGS. 5 to 8. First, as shown in FIG. 5, the carbon film of Example 1 was deposited on a first carbon rod (10a
)'s tip is lightly pressed against the second carbon rod (tab) while energizing and discharging it. (a) When performing so-called arc discharge, the evaporation of carbon from the contact portion (10C) is observed.
これによりＡｚ−８ｉ膜（３）カーボン膜Ｑυを約１ｏ
ｏｏＫの膜厚に被”着させる。This reduces the Az-8i film (3) carbon film Qυ to about 1o.
Deposit to a film thickness of ooK.
次に、前記カーボン膜（１１）上にレジスト膜醤を回転
塗布し乾燥し、露光現像し所定パターンのレジスト膜（
１２’）を形成する。ついで叙上のレジスト膜（１２’
）ｔ−マスクにして反応性イオンエツチング装置でＯ，
ガスを用いてカーボン膜Ｉにエツチングを施す（第６１
１Ｑ）。なお、との隙レジスト膜もエツチングされるが
、カーボン膜はわずか１００ｄの膜厚であるからオーバ
ーエツチングを見込んでも充分レジストはカーボン膜の
エツチングのマスクになりうる。次にレジスト除去液、
例えばベンゼンスルフォン酸を主成分とするものでレジ
スト膜を除去する。このとき、カーボン膜はレジスト除
去液では除去されない。（１１’）は残されたカーボン
膜である（第７図）。ついで上記残されたカーボン膜（
１１りをマスクに反応性イオンエツチングににすＣＣｔ
、とＣｔ、ガスを用いてλ／−ｆ９ｉＵ（３）にエツチ
ングを施しパターン化されたＡｌ −Ｓ ＋膜（３“）
に形成する（−８図）。な」６、このときマスクとなっ
ているカーボン膜は冗す薄いので背景技術に見られた側
壁堆積物は発生しない。ついでカーボン膜をＯ，プラズ
マによって灰化（アッシング装置による）させて除去す
る。この際Ａ／ −Ｓ ｉ膜およびこの下地の羽へ膜は
全くエツチングされず達成された。Next, a resist film sauce is spin coated on the carbon film (11), dried, exposed and developed to form a resist film (11) in a predetermined pattern.
12'). Next, the resist film (12'
) using a t-mask and a reactive ion etching device.
Etching the carbon film I using gas (61st step)
1Q). Incidentally, the gap resist film is also etched, but since the carbon film is only 100 d thick, even if over-etching is expected, the resist can sufficiently serve as a mask for etching the carbon film. Next, resist removal liquid,
For example, the resist film is removed using something whose main component is benzenesulfonic acid. At this time, the carbon film is not removed by the resist removal solution. (11') is the remaining carbon film (Fig. 7). Next, remove the carbon film left above (
CCt for reactive ion etching using 11 as a mask
, and Ct, patterned Al-S+ film (3") by etching λ/-f9iU (3) using gas.
(Fig.-8). 6. At this time, since the carbon film serving as a mask is thin, the side wall deposits seen in the background art do not occur. The carbon film is then removed by ashing (using an ashing device) with O and plasma. At this time, the A/-Si film and the underlying film were not etched at all.
次に示す実施例は基板表面の凹凸が甚だしい場合に有効
な方法である。これを第９図ないし第１１図によって説
明する。表面に凹凸が激しい基板ＱυＫｍｌの別０県Ｑ
擾を介してＡｌ・Ｓｉ膜（２）が１μｍ厚に形成されて
いる。このＡｌ −Ｓ を膜をエツチングするためにカ
ーボン膜ｅｄ４１を叙上の形成手段でｔｏｏｏＸ厚に形
成する。この際、凹凸部の側面にも充分まわりこむよう
に基板をプラネタリ運動させる。次に第１のレジスト膜
（ハ）を厚く回転塗着し上面を平坦にする。レジスト膜
を充分乾燥させたのち、第２の８１０．膜０４を約１０
００λ厚にプラズマＣＹＤ法また杖イオンブレーティン
グ法で形成する。さらに、第２のレジスト膜＜３５１を
０．７μｍ厚に薄く回転塗着する。The following embodiment is an effective method when the surface of the substrate is extremely uneven. This will be explained with reference to FIGS. 9 to 11. Another 0 prefecture Q of the substrate QυKml with severe unevenness on the surface
An Al/Si film (2) with a thickness of 1 μm is formed through the membrane. In order to etch this Al-S film, a carbon film ed41 is formed to a thickness of too thick by the above-mentioned forming means. At this time, the substrate is moved in a planetary manner so as to sufficiently wrap around the side surfaces of the uneven portions. Next, a thick first resist film (c) is applied by spinning to make the upper surface flat. After sufficiently drying the resist film, a second 810. Membrane 04 is about 10
It is formed to a thickness of 00λ using the plasma CYD method or the cane ion blating method. Furthermore, a second resist film <351 is spin-coated to a thickness of 0.7 μm.
ついで線光視像を施し、パターニングを行なってパター
ン状の菖２のレジスト膜（３５つとしたのち、このレジ
スト膜（３５’）をマスクにして反応性イオンエツチン
グ法で、ＣＦ、と鳩のガスプラズマを用いて第２の８ｉ
０．膜０邊にエツチングを施す（第９図）。Next, line-light imaging was performed and patterning was performed to form a patterned resist film (35 pieces). Using this resist film (35') as a mask, reactive ion etching was performed to remove CF and pigeon gas. Second 8i using plasma
0. Etching is applied to the zero area of the film (Figure 9).
次に第２のＳｔＯ，膜Ｏａをマスクとして第１のレジス
ト膜（ハ）およびカーボン膜ｃ１４に反応性イオンエツ
チング法で０．プラズマを用いてエツチングを施す（第
１０図）。Next, using the second StO film Oa as a mask, the first resist film (c) and carbon film c14 are etched by reactive ion etching. Etching is performed using plasma (Fig. 10).
次に希弗酸で第１のレジスト膜（ハ）上の第２のＳム０
．膜（３２’）を全面エツチング除去する。モしてＡ／
別膜（ハ）上にカーボン膜（財）のみを残した状態で、
とのカーボン膜をマスクにして反応性イオンエツチング
法でＣＣｔ、とＣ／、のガスプラズマを用いてｋｌ −
８ｋ膜にエツチングを施す（第１１図）。なお、このと
きもマスクのカーボン膜は薄いため背景技術のようなＡ
／ −８ｉ膜側壁における堆積物の発生が見られなかっ
た。また、最後に残留したカーボン膜１ｉＯｘプラズマ
（アッシング装置）で灰化させ除去することは前記実施
例と変わりない。：。Next, the second S film on the first resist film (c) is coated with dilute hydrofluoric acid.
．． The entire surface of the film (32') is removed by etching. Moshite A/
With only the carbon film (goods) remaining on the separate film (c),
Kl −
Etching is performed on the 8k film (Figure 11). In addition, since the carbon film of the mask is thin at this time, A
/-8i No deposits were observed on the side walls of the film. Furthermore, the last remaining carbon film 1iOx plasma (ashing device) is used to incinerate and remove it, which is the same as in the previous embodiment. :.
・１１１
この実施例によれば基板表面の凹凸が激しい場合にも嵐
好なエツチングが達成される。・111 According to this embodiment, excellent etching can be achieved even when the substrate surface has severe irregularities.
この発明によれば、カーボンの薄膜をマスクとして反応
性イオンエツチングにより微細パターンを形成し、かつ
そのエツチングの際、背景技術に見られる堆積物を生じ
ないため、能率よく高い品質の微細パターンの形成が達
成できる顕著な利点がある。According to this invention, fine patterns are formed by reactive ion etching using a carbon thin film as a mask, and deposits seen in the background art are not generated during etching, so that fine patterns of high quality can be formed efficiently. There are significant benefits that can be achieved.
第１図ないし第４図社従来の微細パターンの形成方法の
一部を工程順に示すいずれも断面図、第５図ないし第８
図はｌ実施例を工程順に示すいずれも断面図、第９図な
いし第１１図は別の１実施例を工程順に示すいずれも断
面図である。
１．２１ シリコン基板
２ 、２２ ８ Ｉ Ｏｘ膜
３．２３ ｋｌ−８１膜
３’、 ３” パターン化されたＡ／−８３
膜１１．２４ カー−ボン膜
：：：≧。
１１’、 ２４’ 残゛さ、れたカーボン膜
１２ レジスト膜
１２’ 所定パターンのレジスト膜ｎ
第１の別０．膜
３２ 館２の８１へ膜
５ 第１のレジスト膜
あ 第２のレジスト膜
１０Ｂ 第１のカーボン棒
Ｊｏｂ 第２のカーボン棒
ｉｏｃ カーボン棒の接触部代理人 弁理
士 井 上 −男１４
第 １ 図
第２図
１３図
第 ４ 図
１１５図
１６図
１１７ 図
第 ８ 図
３１９図
第１０図Figures 1 to 4 show a part of the conventional method for forming fine patterns in the order of steps, and Figures 5 to 8 are cross-sectional views.
The figures are sectional views showing one embodiment in the order of steps, and FIGS. 9 to 11 are sectional views showing another embodiment in the order of steps. 1.21 Silicon substrate 2, 22 8 I Ox film 3.23 kl-81 film 3', 3'' patterned A/-83
Film 11.24 Carbon film:::≧. 11', 24' Remaining carbon film 12 Resist film 12' Predetermined pattern of resist film n
1st different 0. Membrane 32 To 81 in building 2 Membrane 5 First resist film A Second resist film 10B First carbon rod Job Second carbon rod IOC Carbon rod contact part agent Patent attorney Inoue - 14 Figure 1 Figure 2 Figure 13 Figure 4 Figure 115 Figure 16 Figure 117 Figure 8 Figure 319 Figure 10
Claims (1)
を形成する方法において、マスク材にカーボン薄膜を用
い反応性イオンエツチングによってエツチングを施す美
ことを特徴とする微細パターンの形成方法。A method of forming a fine pattern by etching a film using a mask, which is characterized by the fact that a carbon thin film is used as a mask material and the etching is performed by reactive ion etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9407882A JPS58212136A (en) | 1982-06-03 | 1982-06-03 | Forming method for ultrafine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9407882A JPS58212136A (en) | 1982-06-03 | 1982-06-03 | Forming method for ultrafine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58212136A true JPS58212136A (en) | 1983-12-09 |
Family
ID=14100448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9407882A Pending JPS58212136A (en) | 1982-06-03 | 1982-06-03 | Forming method for ultrafine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212136A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01196828A (en) * | 1988-02-01 | 1989-08-08 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device having carbon film formed thereon |
| JPH01198489A (en) * | 1988-02-01 | 1989-08-10 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film |
| DE4201661A1 (en) * | 1991-01-22 | 1992-07-30 | Toshiba Kawasaki Kk | Semiconductor integrated circuit mfr. - uses a deposited carbon@ film as intermediate layer to improve the accuracy of reproducing sub-micron dimensions |
| US5240554A (en) * | 1991-01-22 | 1993-08-31 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5378316A (en) * | 1991-04-03 | 1995-01-03 | Eastman Kodak Company | High durability mask for dry etch processing of GaAs |
| US5437961A (en) * | 1990-11-27 | 1995-08-01 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5445710A (en) * | 1991-01-22 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
-
1982
- 1982-06-03 JP JP9407882A patent/JPS58212136A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01196828A (en) * | 1988-02-01 | 1989-08-08 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device having carbon film formed thereon |
| JPH01198489A (en) * | 1988-02-01 | 1989-08-10 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film |
| US5437961A (en) * | 1990-11-27 | 1995-08-01 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| DE4201661A1 (en) * | 1991-01-22 | 1992-07-30 | Toshiba Kawasaki Kk | Semiconductor integrated circuit mfr. - uses a deposited carbon@ film as intermediate layer to improve the accuracy of reproducing sub-micron dimensions |
| US5240554A (en) * | 1991-01-22 | 1993-08-31 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5445710A (en) * | 1991-01-22 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5707487A (en) * | 1991-01-22 | 1998-01-13 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5378316A (en) * | 1991-04-03 | 1995-01-03 | Eastman Kodak Company | High durability mask for dry etch processing of GaAs |
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