JPS5672172A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5672172A
JPS5672172A JP14955379A JP14955379A JPS5672172A JP S5672172 A JPS5672172 A JP S5672172A JP 14955379 A JP14955379 A JP 14955379A JP 14955379 A JP14955379 A JP 14955379A JP S5672172 A JPS5672172 A JP S5672172A
Authority
JP
Japan
Prior art keywords
sputtering
substrate
bath
electromagnetic wave
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14955379A
Other languages
Japanese (ja)
Inventor
Hide Kobayashi
Katsuo Abe
Tsuneaki Kamei
Tokio Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14955379A priority Critical patent/JPS5672172A/en
Publication of JPS5672172A publication Critical patent/JPS5672172A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To remove moisture of the substrate surface completely to improve the quality of the sputtering-formed film, by irradiating the electromagnetic wave of an ultrahigh frequency in the sputtering bath or the preprocessing room adjacent to this bath in case that the thin film is formed onto the substrate surface by the sputtering method. CONSTITUTION:Substrate 3 for formation of a thin film is put on Teflon substrate holder 2 in sputtering bath 1. After air in sputtering bath 1 is evaculated by driving vacuum exhaustion system 11, magnetron oscillator 4 is excited, and the obtained electromagnetic wave of an ultrahigh frequency is led by waveguide 5 and is led into bath 1 through quartz glass plate 6 and is projected onto substrate 3. Water adsorbed to substrate 3 is energized by the electromagnetic wave and is dispersed dielectrically and is exhausted as water molecules from exhaustion system 11. Thus, substrate 3 is dried completely, and the thin film of a superior quality is formed by sputtering. In this case, a preprocessing room may be provided before the sputtering bath to move the substrate and subject it to dehydration and sputtering processings.
JP14955379A 1979-11-20 1979-11-20 Sputtering device Pending JPS5672172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14955379A JPS5672172A (en) 1979-11-20 1979-11-20 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14955379A JPS5672172A (en) 1979-11-20 1979-11-20 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5672172A true JPS5672172A (en) 1981-06-16

Family

ID=15477670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14955379A Pending JPS5672172A (en) 1979-11-20 1979-11-20 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5672172A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166718A (en) * 1982-03-29 1983-10-01 Fujitsu Ltd Manufacture of semiconductor device
JPS61279674A (en) * 1985-06-05 1986-12-10 Osaka Shinku Kiki Seisakusho:Kk Sputtering device
CN104064843A (en) * 2014-06-09 2014-09-24 青岛东方循环能源有限公司 Rectangular waveguide device for reducing microwave reflection

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166718A (en) * 1982-03-29 1983-10-01 Fujitsu Ltd Manufacture of semiconductor device
JPS61279674A (en) * 1985-06-05 1986-12-10 Osaka Shinku Kiki Seisakusho:Kk Sputtering device
CN104064843A (en) * 2014-06-09 2014-09-24 青岛东方循环能源有限公司 Rectangular waveguide device for reducing microwave reflection
CN104064843B (en) * 2014-06-09 2016-05-11 青岛东方循环能源有限公司 A kind of rectangular waveguide device that reduces microwave reflection

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