JPS5721825A - Increasing method for gettering effect due to internal defect in semiconductor substrate - Google Patents

Increasing method for gettering effect due to internal defect in semiconductor substrate

Info

Publication number
JPS5721825A
JPS5721825A JP9604180A JP9604180A JPS5721825A JP S5721825 A JPS5721825 A JP S5721825A JP 9604180 A JP9604180 A JP 9604180A JP 9604180 A JP9604180 A JP 9604180A JP S5721825 A JPS5721825 A JP S5721825A
Authority
JP
Japan
Prior art keywords
stages
gettering effect
heat treating
substrate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9604180A
Other languages
Japanese (ja)
Other versions
JPS5854497B2 (en
Inventor
Hideki Tsuya
Masaru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9604180A priority Critical patent/JPS5854497B2/en
Publication of JPS5721825A publication Critical patent/JPS5721825A/en
Publication of JPS5854497B2 publication Critical patent/JPS5854497B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To improve the electric characteristics of a semiconductor substrate by heat treating silicon single crystal at the prescribed high temperature, sequentially heat treating from the prescribed low temperature to high temperature in multiple stages in dry atmosphere and generating internal defect in high density in the substrate, thereby increasing the gettering effect. CONSTITUTION:A silicon substrate heat treated at high temperature higher that 1,200 deg.C in advance is sequentially heat treated from 500 deg.C, is raised by 50-100 deg.C sequentially, and is eventually raised to 800 deg.C in multiple heat treating stages. Since the internal defects occurred in the substrate at the respective temperature stages have critical size, the defects are produced in high density more than the critical size at every heat treating stages, are absorbed by the gettering effect to suppress the infinitesimal defects, and the electric characteristics of the device can be improvecd.
JP9604180A 1980-07-14 1980-07-14 A method to increase the gettering effect due to internal defects in semiconductor substrates Expired JPS5854497B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9604180A JPS5854497B2 (en) 1980-07-14 1980-07-14 A method to increase the gettering effect due to internal defects in semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9604180A JPS5854497B2 (en) 1980-07-14 1980-07-14 A method to increase the gettering effect due to internal defects in semiconductor substrates

Publications (2)

Publication Number Publication Date
JPS5721825A true JPS5721825A (en) 1982-02-04
JPS5854497B2 JPS5854497B2 (en) 1983-12-05

Family

ID=14154400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9604180A Expired JPS5854497B2 (en) 1980-07-14 1980-07-14 A method to increase the gettering effect due to internal defects in semiconductor substrates

Country Status (1)

Country Link
JP (1) JPS5854497B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198334A (en) * 1987-02-13 1988-08-17 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon wafer
US5369245A (en) * 1991-07-31 1994-11-29 Metron Designs Ltd. Method and apparatus for conditioning an electronic component having a characteristic subject to variation with temperature
JPH07193072A (en) * 1993-12-27 1995-07-28 Nec Corp Manufacture of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154098U (en) * 1984-09-10 1986-04-11
JPS639391U (en) * 1986-07-01 1988-01-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198334A (en) * 1987-02-13 1988-08-17 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon wafer
US5369245A (en) * 1991-07-31 1994-11-29 Metron Designs Ltd. Method and apparatus for conditioning an electronic component having a characteristic subject to variation with temperature
JPH07193072A (en) * 1993-12-27 1995-07-28 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5854497B2 (en) 1983-12-05

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