JPS5664480A - Manufacture of semiconductor detector for radioactive ray - Google Patents
Manufacture of semiconductor detector for radioactive rayInfo
- Publication number
- JPS5664480A JPS5664480A JP13949079A JP13949079A JPS5664480A JP S5664480 A JPS5664480 A JP S5664480A JP 13949079 A JP13949079 A JP 13949079A JP 13949079 A JP13949079 A JP 13949079A JP S5664480 A JPS5664480 A JP S5664480A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- substrate
- alloy
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000002285 radioactive effect Effects 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- 239000000956 alloy Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
- 238000004347 surface barrier Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
PURPOSE:To obtain the titled detector without damaging the crystallizing property of the semiconductor by a method wherein a surface of the semiconductor is coated with metal or an alloy, the metal or the alloy is alloyed with the semiconductor by irradiating laser rays to the surface, and an impurity introducing region or an adhering region of an electrode and the semiconductor is formed into the semiconductor. CONSTITUTION:Au vapor 6 containing Sb evaporated by using resistance heating or electron beams is evaporated on a surface of P type Si substrate 1 having ultra- high resistivity in vacuum through a mask 7, and an alloy layer 8 of Au and Sb is formed. Al vapor 9 is similarly evaporated on the back of the substrate 1 through a mask 10, an Al layer 11 is made up, laser rays 12 such as ruby laser are uniformly irradiated onto both sides of the substrate 1, and these metallic layers 8, 11 are melted, and alloyed with the substrate 1. Thus, an N type layer 13 by Sb contained in Au of the layer 8 and a P<+> type layer 14 by Al in the layer 11 are each formed on the surface layer sections of the both sides of the substrate 1, and P<+>PN structure is made up. Surface barriers may be formed in place of the junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13949079A JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13949079A JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5664480A true JPS5664480A (en) | 1981-06-01 |
Family
ID=15246467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13949079A Pending JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664480A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US6753212B2 (en) | 1999-08-13 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6878574B2 (en) | 2002-01-17 | 2005-04-12 | Sony Corporation | Alloying method for a image display device using laser irradiation |
| US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7456371B2 (en) | 1999-08-18 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus and laser annealing method |
-
1979
- 1979-10-29 JP JP13949079A patent/JPS5664480A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7179698B2 (en) | 1999-08-13 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6753212B2 (en) | 1999-08-13 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US7473622B2 (en) | 1999-08-13 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and manufacturing method of a semiconductor device |
| US6974731B2 (en) | 1999-08-13 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US7456371B2 (en) | 1999-08-18 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus and laser annealing method |
| US7338913B2 (en) | 1999-08-18 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7049227B2 (en) | 2002-01-17 | 2006-05-23 | Sony Corporation | Method for alloying a wiring portion for a image display device |
| US7319052B2 (en) | 2002-01-17 | 2008-01-15 | Sony Corporation | Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method |
| US7011990B2 (en) | 2002-01-17 | 2006-03-14 | Sony Corporation | Alloying method using laser irradiation for a light emitting device |
| US7008827B2 (en) | 2002-01-17 | 2006-03-07 | Sony Corporation | Alloy method using laser irradiation |
| US6878574B2 (en) | 2002-01-17 | 2005-04-12 | Sony Corporation | Alloying method for a image display device using laser irradiation |
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