JPS57121284A - Manufacture of semiconductor radiation detector - Google Patents
Manufacture of semiconductor radiation detectorInfo
- Publication number
- JPS57121284A JPS57121284A JP56007158A JP715881A JPS57121284A JP S57121284 A JPS57121284 A JP S57121284A JP 56007158 A JP56007158 A JP 56007158A JP 715881 A JP715881 A JP 715881A JP S57121284 A JPS57121284 A JP S57121284A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gold
- layer
- alpha ray
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 5
- 239000010931 gold Substances 0.000 abstract 5
- 229910052737 gold Inorganic materials 0.000 abstract 5
- 230000005260 alpha ray Effects 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000941 radioactive substance Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable the direct detection of a radioactive substance by depositing gold containing antimony on a window electrode in an Si semiconductor radiation detector, alloying and heat treating the gold, thereby obtaining mechanically and medically rigid gold electrode. CONSTITUTION:Gold containing antimony is deposited through a mask 1 on a P type Si substrate 3, thereby forming a gold electrode. A P-N junction layer is formed in an alloy layer 4 thus heat treated. When a reverse bias is applied to the layer, a depletion layer expands directly under the alloy layer, thereby becoming detectable for an alpha ray. In this manner, the electrode becomes mechanically and medically rigid in its structure. When the surface of the electrode is dipped directly in a liquid which contains alpha ray radiation substance, the radiation such as the alpha ray can be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56007158A JPS57121284A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56007158A JPS57121284A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57121284A true JPS57121284A (en) | 1982-07-28 |
| JPS6161707B2 JPS6161707B2 (en) | 1986-12-26 |
Family
ID=11658258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56007158A Granted JPS57121284A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57121284A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013543588A (en) * | 2010-10-07 | 2013-12-05 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Detection method using an electrochemically assisted alpha detector for nuclear measurements in liquid media |
-
1981
- 1981-01-22 JP JP56007158A patent/JPS57121284A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013543588A (en) * | 2010-10-07 | 2013-12-05 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Detection method using an electrochemically assisted alpha detector for nuclear measurements in liquid media |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161707B2 (en) | 1986-12-26 |
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