JPS5449085A - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- JPS5449085A JPS5449085A JP11620877A JP11620877A JPS5449085A JP S5449085 A JPS5449085 A JP S5449085A JP 11620877 A JP11620877 A JP 11620877A JP 11620877 A JP11620877 A JP 11620877A JP S5449085 A JPS5449085 A JP S5449085A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- channel
- semiconductor device
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To control a channel current by controlling the expansion of a depletion layer making use of light electromotive force generated at a PN junction through irradiation.
CONSTITUTION: In P+ substrate 1, N- layer 2 is generated and then, island-shaped P+ layer 3 is provided into layer 2 and used as a gate. The diffusion depth of gate 3 is so controlled that the inside of layer 2 will be separated into source 5 and drain 6 through the expansion of circumferential depletion layer 4. When gate 3 and the channel part are both irradiated, a release voltage flows in the forward direction of the (pn) junction and depletion layer 4 contracts to form a channel, so that the source and drain will conduct each other. The channel current can be controlled through irradiation or by changing the gate width, depth, etc. The control by applying a voltage to gate 3 is more effective
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11620877A JPS5449085A (en) | 1977-09-26 | 1977-09-26 | Field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11620877A JPS5449085A (en) | 1977-09-26 | 1977-09-26 | Field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5449085A true JPS5449085A (en) | 1979-04-18 |
Family
ID=14681507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11620877A Pending JPS5449085A (en) | 1977-09-26 | 1977-09-26 | Field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5449085A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5894218A (en) * | 1981-11-30 | 1983-06-04 | Semiconductor Res Found | Photocoupler |
JPS59201506A (en) * | 1983-04-28 | 1984-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Optical control system of amplitude for superhigh frequency active circuit |
DE3502713A1 (en) * | 1985-01-28 | 1986-07-31 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithically integrated circuit with lower-level tunnelling |
-
1977
- 1977-09-26 JP JP11620877A patent/JPS5449085A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5894218A (en) * | 1981-11-30 | 1983-06-04 | Semiconductor Res Found | Photocoupler |
WO1983002039A1 (en) * | 1981-11-30 | 1983-06-09 | Nishizawa, Jun-Ichi | Photocoupler |
EP0094972A1 (en) * | 1981-11-30 | 1983-11-30 | Semiconductor Research Foundation | Photocoupler |
US4629901A (en) * | 1981-11-30 | 1986-12-16 | Semiconductor Research Foundation | Photo coupler with static induction transistor type detector |
JPS59201506A (en) * | 1983-04-28 | 1984-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Optical control system of amplitude for superhigh frequency active circuit |
DE3502713A1 (en) * | 1985-01-28 | 1986-07-31 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithically integrated circuit with lower-level tunnelling |
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