JPS5449085A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS5449085A
JPS5449085A JP11620877A JP11620877A JPS5449085A JP S5449085 A JPS5449085 A JP S5449085A JP 11620877 A JP11620877 A JP 11620877A JP 11620877 A JP11620877 A JP 11620877A JP S5449085 A JPS5449085 A JP S5449085A
Authority
JP
Japan
Prior art keywords
layer
gate
channel
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11620877A
Other languages
Japanese (ja)
Inventor
Hitoshi Kawanabe
Akira Aso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11620877A priority Critical patent/JPS5449085A/en
Publication of JPS5449085A publication Critical patent/JPS5449085A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To control a channel current by controlling the expansion of a depletion layer making use of light electromotive force generated at a PN junction through irradiation.
CONSTITUTION: In P+ substrate 1, N- layer 2 is generated and then, island-shaped P+ layer 3 is provided into layer 2 and used as a gate. The diffusion depth of gate 3 is so controlled that the inside of layer 2 will be separated into source 5 and drain 6 through the expansion of circumferential depletion layer 4. When gate 3 and the channel part are both irradiated, a release voltage flows in the forward direction of the (pn) junction and depletion layer 4 contracts to form a channel, so that the source and drain will conduct each other. The channel current can be controlled through irradiation or by changing the gate width, depth, etc. The control by applying a voltage to gate 3 is more effective
COPYRIGHT: (C)1979,JPO&Japio
JP11620877A 1977-09-26 1977-09-26 Field effect semiconductor device Pending JPS5449085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11620877A JPS5449085A (en) 1977-09-26 1977-09-26 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11620877A JPS5449085A (en) 1977-09-26 1977-09-26 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5449085A true JPS5449085A (en) 1979-04-18

Family

ID=14681507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11620877A Pending JPS5449085A (en) 1977-09-26 1977-09-26 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5449085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894218A (en) * 1981-11-30 1983-06-04 Semiconductor Res Found Photocoupler
JPS59201506A (en) * 1983-04-28 1984-11-15 Nippon Telegr & Teleph Corp <Ntt> Optical control system of amplitude for superhigh frequency active circuit
DE3502713A1 (en) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithically integrated circuit with lower-level tunnelling

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894218A (en) * 1981-11-30 1983-06-04 Semiconductor Res Found Photocoupler
WO1983002039A1 (en) * 1981-11-30 1983-06-09 Nishizawa, Jun-Ichi Photocoupler
EP0094972A1 (en) * 1981-11-30 1983-11-30 Semiconductor Research Foundation Photocoupler
US4629901A (en) * 1981-11-30 1986-12-16 Semiconductor Research Foundation Photo coupler with static induction transistor type detector
JPS59201506A (en) * 1983-04-28 1984-11-15 Nippon Telegr & Teleph Corp <Ntt> Optical control system of amplitude for superhigh frequency active circuit
DE3502713A1 (en) * 1985-01-28 1986-07-31 Robert Bosch Gmbh, 7000 Stuttgart Monolithically integrated circuit with lower-level tunnelling

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