JPS5390878A - Manufacture of schottky barrier gate field effect transistor - Google Patents

Manufacture of schottky barrier gate field effect transistor

Info

Publication number
JPS5390878A
JPS5390878A JP615277A JP615277A JPS5390878A JP S5390878 A JPS5390878 A JP S5390878A JP 615277 A JP615277 A JP 615277A JP 615277 A JP615277 A JP 615277A JP S5390878 A JPS5390878 A JP S5390878A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
schottky barrier
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP615277A
Other languages
Japanese (ja)
Inventor
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP615277A priority Critical patent/JPS5390878A/en
Publication of JPS5390878A publication Critical patent/JPS5390878A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain an element which features a minute pattern and good microwave characteristics, by injecting selectively the ion at the areas which are to be the source and the drain regions of the N-type GaAs cahnnel layer and then forming there an N+-type region with the peak carrier density of 6 × 1017/cm3 or more.
COPYRIGHT: (C)1978,JPO&Japio
JP615277A 1977-01-21 1977-01-21 Manufacture of schottky barrier gate field effect transistor Pending JPS5390878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP615277A JPS5390878A (en) 1977-01-21 1977-01-21 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP615277A JPS5390878A (en) 1977-01-21 1977-01-21 Manufacture of schottky barrier gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5390878A true JPS5390878A (en) 1978-08-10

Family

ID=11630548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP615277A Pending JPS5390878A (en) 1977-01-21 1977-01-21 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5390878A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0249437A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0249437A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device
JPH0515304B2 (en) * 1989-03-18 1993-03-01 Fujitsu Ltd

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